JPH03293566A - Inspection apparatus - Google Patents

Abstract

PURPOSE:To eliminate the defect of a needle system by providing a micro- diameter continuity hole to t lead forming part of a dielectric film having an inspection circuit and an electrode lead and providing a bump like metal projection to the opposite end thereof. CONSTITUTION:A bump like projection 4 is brought into contact with the electrode part 6 of a semiconductor device 5 at the time of inspection to carry out various electrical inspections. A window part 7 is provided to the dielectric film 2 of the effective surface corresponding part of the device 5 to facilitate the alignment at the time of inspection. Further, the inspection circuit and electrode leads formed to the single surface of the film 2 are arranged in linear patterns suitable for the inspection of the predetermined function of the device 5. The minute continuity holes 3 of the film 2 are provided to the lead forming region at a pitch smaller than the width thereof for the sake of the electrical connection of the leads 1 with the electrode part 6 on the device. By this constitution, a region to be inspected is not damaged and the alignment at the time of inspection is easy and an object to be inspected having high frequency characteristics can be easily inspected.

Description

DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an inspection device, and more particularly to an inspection device used for testing semiconductors.

<Prior Art> In recent years, with the progress of advanced semiconductor integration technology and its high-density packaging technology, the number of electrodes in semiconductor devices has increased, and the density of their pitches has also increased year by year. There is also a need for technology for directly inspecting semiconductor devices, such as by directly mounting Hairchimp on circuit boards.

Traditionally, mechanical probes with two needles have been used to test semiconductor devices, but the lifespan of such mechanical probes is short at 10,000 to 20,000 times due to high density, and the number of contacts is short, and the number of contacts is short, and the number of contacts is short, and the number of contacts is short due to the high density. The blade and needle can easily become misaligned, bent, or sometimes short-circuited. Furthermore, since force is applied during contact, the needle or blade may pierce the die pad and cause damage, which may result in product defects during inspection. Furthermore, it is difficult to match the impedance of the needle, making it difficult to adopt a complicated structure.

<Problems to be Solved by the Invention> An object of the present invention is to provide a completely new inspection device that solves the drawbacks of the conventional mechanical probe with two needles.

<Means for Solving the Problems> As a result of intensive studies to achieve the above object, the present inventors have developed an excellent inspection device that replaces the mechanical probe by using a dielectric film with a specific structure. The present inventors have discovered that the following can be obtained, and have completed the present invention.

That is, the present invention is an inspection device consisting of a dielectric film having a test circuit and electrode leads on its surface, wherein the dielectric film at the lead formation area is provided with a micro-diameter conductive hole, and furthermore, the dielectric film is provided with a micro-diameter conductive hole on the surface opposite to the lead formation surface. The present invention provides an inspection device characterized in that a bump-shaped metal protrusion is provided at the end of the conduction hole.

In addition, the above inspection device increases the degree of freedom in wiring circuits by electrically bonding and stacking the dielectric films on which the inspection circuit and electrode leads are formed, so it can be applied to inspection of high-density type semiconductor devices. Be useful.

<Example> Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a cross-sectional view of an example of an inspection, showing a state in which the inspection apparatus of the present invention is brought into contact with an electrode portion 6 of a semiconductor device 5 for inspection. The testing device of the present invention is composed of a testing circuit and a dielectric film 2 on the surface of an electrode lead 1,
The dielectric film 2 at the lead 1 formation site is provided with a micro-diameter conduction hole 3, and a bump-shaped metal protrusion 4 is provided at the end of the conduction hole 3 on the surface opposite to the surface on which the lead 1 is formed. It is what it is. During testing, the bump-shaped metal protrusions 4 are brought into contact with the electrode portions 6 of the semiconductor device 5 to perform various electrical tests. Furthermore, by providing a window 7 in the portion of the dielectric film 2 facing the effective surface of the semiconductor device W5 as shown in FIG. It is also possible to mark the semiconductor device 5 through the window 7.

The material of the dielectric film 2 in the inspection device of the present invention is not limited as long as it has electrical insulation properties.
Thermosetting resins and thermoplastics such as polyester resin, epoxy resin, urethane resin, polystyrene resin, polyethylene resin, polyamide resin, polyimide resin, ABS resin, polycarbonate resin, silicone resin, fluorine resin, etc. Can be used regardless of resin. Among these, polyimide resins are preferably used in terms of dielectric constant, heat resistance, and mechanical strength.

The test circuit and electrode lead 1 formed on one side of the dielectric film 2 are made of gold, silver, copper, iron, nickel, etc., for example.
It is formed using conductive materials such as various metals such as cobalt, or various alloys containing these as main components, and is formed by methods such as sputtering, various vapor deposition, and various plating methods, so that predetermined functions of the semiconductor device 5 can be inspected during inspection. are wired in a desired linear pattern.

The micro-diameter conductive holes 3 provided in the dielectric film 2 are important for achieving electrical connection between the electrode leads 1 and the electrode portions 6 on the semiconductor device 5.
Using a hole pinch smaller than the width of lead 1 at the formation site,
One or more conductive holes are provided in the thickness direction of the film 2. The through holes 3 can be formed with any hole diameter or hole pitch using methods such as mechanical processing, laser processing, optical processing, or chemical etching. It is preferable to do this. In addition, it is important to increase the diameter of the conduction holes 3 to the extent that adjacent conduction holes do not connect with each other and short-circuit, and to increase the number of conduction holes 3 in contact with the leads 1 by minimizing the pinch between the holes. This is preferable because the electrical resistance of the holes 3 can be made small.

The conduction holes 3 are electrically connected to the front and back surfaces of the dielectric film 2, and the conduction can normally be achieved by filling the holes with a metal material using a method such as plating.

For example, by electrolytically plating a dielectric film 2 with minute diameter holes using the lead I as an electrode, it is possible to selectively fill only the lead formation site. The metal substance filled here is not limited to a single metal substance, and a multilayer structure can be formed using multiple types of metal substances.

For example, an inexpensive metal material such as copper is used for the first layer on the lead 1 side of the conductive hole 3, a metal material such as gold with high connection reliability is used for the third layer in contact with the semiconductor device, and the first layer As the second layer located between the first layer and the third layer, nickel or the like can be used as a barrier metal material to prevent mutual reaction between the metal materials forming the first layer and the third layer.

Furthermore, a bump-shaped metal protrusion 4 is formed at the end of the conductive hole 3 on the opposite side to the surface on which the lead 1 is formed, at a height of 0.1 to several hundred μm to be brought into contact with the electrode portion 6 of the semiconductor device 5. This can be used as an inspection device of the present invention. The bump-shaped metal protrusion 4 can have any shape, for example, the through hole 3.
According to the shape, it can be formed as shown in FIG. In addition, in the present invention, as shown in FIGS. 3(a) and 3(b), on the metal protrusion 4, a smaller diameter (or needle-shaped)
A protrusion 15 can be formed. By doing so, it is possible to add the effect of breaking through a metal oxide film formed on the surface of the electrode portion 6 of the semiconductor device 5 by air oxidation or the like. Further, as shown in FIG. 4, by coating the upper surface of the metal protrusion 4, that is, the portion in contact with the electrode section 6 of the semiconductor device 5 with a metal substance 16 such as chromium or tungsten, wear of the metal protrusion can be prevented. can be reduced, and the life of the inspection device can be extended. By using a metal such as rhodium for the metal substance 16, it is also possible to prevent contamination due to oxide film residue generated on the electrode section 6.

Although the inspection device of the present invention has the above structure as its basic structure,
For example, a laminated structure as shown in FIGS. 5 and 6 may be used. FIG. 5 shows a dielectric film 2 having a test circuit and electrode leads 1 placed between the two through an electrically insulating adhesive layer 8.
It is an inspection device made up of laminated sheets, and one inspection circuit 10 is wired with a grounding circuit and the like. With such a laminated structure, impedance matching can be guaranteed more accurately. Further, the two types of circuits described above can also be connected by a fine via hole 11 filled with a metal substance.

FIG. 6 shows another embodiment of the laminated structure of the test circuit, in which dielectric films 13 and 13' each having a test circuit 12 and 12'' are connected to the adhesive layer 14 as in FIG.
．． 14' is laminated via the fifth layer.
It is formed by laminating the structure of the inspection device shown in the figure, and each circuit is electrically connected by a pie hole 11.

In this manner, the inspection apparatus of the present invention allows the number of laminated layers to be set as required, increasing the degree of freedom in wiring and making it possible to inspect high-density type semiconductor devices.

<Effects of the Invention> As described above, the inspection device of the present invention has a structure using a dielectric film with a specific structure, and uses bump-shaped metal protrusions as inspection contacts, so that it does not require the use of conventional needles. Unlike conventional mechanical probes, the probe does not damage the inspected area during inspection and does not cause product defects. Furthermore, alignment during inspection is easy, and short circuits do not occur. Furthermore, since it includes a test circuit, impedance matching is easy, and semiconductor devices with high frequency characteristics can be tested easily, and by being multilayered, it can be fully used for high-density type semiconductor devices.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of an actual inspection example showing a state in which the inspection device of the present invention is brought into contact with the electrode portion of a semiconductor device, and FIGS. 2, 3(a), and 3(b) ) and FIG. 4 are enlarged cross-sectional views showing a method of forming a hump-shaped metal protrusion in the inspection apparatus of the present invention, and FIGS. 5 and 6 are cross-sectional views showing other embodiments of the inspection apparatus of the present invention. .

Claims (2)

[Claims] (1) An inspection device consisting of a dielectric film having a test circuit and electrode leads on its surface, in which the dielectric film at the lead formation site is provided with a micro-diameter conduction hole, and the conduction hole is provided on the surface opposite to the lead formation surface. An inspection device characterized in that a bump-shaped metal protrusion is provided at the end of the hole. (2) The test device according to claim 1, wherein the dielectric films forming the test circuit and the electrode leads are electrically connected to each other and stacked.