JPH0329295B2 - - Google Patents
Info
- Publication number
- JPH0329295B2 JPH0329295B2 JP60073513A JP7351385A JPH0329295B2 JP H0329295 B2 JPH0329295 B2 JP H0329295B2 JP 60073513 A JP60073513 A JP 60073513A JP 7351385 A JP7351385 A JP 7351385A JP H0329295 B2 JPH0329295 B2 JP H0329295B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- gas
- silicon substrate
- ultraviolet light
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60073513A JPS61232626A (ja) | 1985-04-09 | 1985-04-09 | 絶縁膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60073513A JPS61232626A (ja) | 1985-04-09 | 1985-04-09 | 絶縁膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61232626A JPS61232626A (ja) | 1986-10-16 |
| JPH0329295B2 true JPH0329295B2 (enrdf_load_stackoverflow) | 1991-04-23 |
Family
ID=13520400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60073513A Granted JPS61232626A (ja) | 1985-04-09 | 1985-04-09 | 絶縁膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61232626A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098542A (zh) * | 2016-06-20 | 2016-11-09 | 中国工程物理研究院电子工程研究所 | 一种提升碳化硅功率器件反向阻断电压的方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59147435A (ja) * | 1983-02-10 | 1984-08-23 | Mitsui Toatsu Chem Inc | 酸化シリコン膜の形成法 |
-
1985
- 1985-04-09 JP JP60073513A patent/JPS61232626A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61232626A (ja) | 1986-10-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7723242B2 (en) | Enhanced thin-film oxidation process | |
| US5412246A (en) | Low temperature plasma oxidation process | |
| JP3937892B2 (ja) | 薄膜形成方法および半導体装置の製造方法 | |
| US7645709B2 (en) | Methods for low temperature oxidation of a semiconductor device | |
| JPH1083988A (ja) | 薄膜作成方法及び薄膜作成装置並びに半導体−絶縁体接合構造を有する半導体デバイス | |
| US20040043570A1 (en) | Semiconductor device and process for producing the same | |
| WO2000044033A1 (fr) | Procede et appareil de depot de film | |
| KR20070089883A (ko) | 펄스화된 rf 소스 전력을 이용하는 플라즈마 게이트 산화프로세스 | |
| JPH0580817B2 (enrdf_load_stackoverflow) | ||
| US5543336A (en) | Removing damage caused by plasma etching and high energy implantation using hydrogen | |
| JP3080867B2 (ja) | Soi基板の製造方法 | |
| US5336361A (en) | Method of manufacturing an MIS-type semiconductor device | |
| JPH0964307A (ja) | 酸化物薄膜の熱処理方法 | |
| JP2000068227A (ja) | 表面処理方法および装置 | |
| JP4124675B2 (ja) | シリコンウェハを低温酸化する方法およびその装置 | |
| JPH0682643B2 (ja) | 表面処理方法 | |
| JPH0329295B2 (enrdf_load_stackoverflow) | ||
| JP2694625B2 (ja) | 化合物半導体基体のエッチング方法および製造方法 | |
| JPH05343391A (ja) | 半導体装置の製造方法 | |
| JPH0778759A (ja) | 半導体材料の製造方法および製造装置 | |
| JPH0855846A (ja) | 酸化珪素膜の加熱処理方法および加熱処理装置 | |
| TW200401371A (en) | Method for oxidizing a silicon wafer at low-temperature and apparatus for the same | |
| JPH0855847A (ja) | 酸化珪素膜の加熱処理方法および加熱処理装置 | |
| KR100329745B1 (ko) | 알루미나를 사용한 게이트 절연막 형성방법 | |
| KR0151619B1 (ko) | 반도체 집적회로 유전체막 형성방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |