JPH0329295B2 - - Google Patents

Info

Publication number
JPH0329295B2
JPH0329295B2 JP60073513A JP7351385A JPH0329295B2 JP H0329295 B2 JPH0329295 B2 JP H0329295B2 JP 60073513 A JP60073513 A JP 60073513A JP 7351385 A JP7351385 A JP 7351385A JP H0329295 B2 JPH0329295 B2 JP H0329295B2
Authority
JP
Japan
Prior art keywords
insulating film
gas
silicon substrate
ultraviolet light
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60073513A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61232626A (ja
Inventor
Koji Shiozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60073513A priority Critical patent/JPS61232626A/ja
Publication of JPS61232626A publication Critical patent/JPS61232626A/ja
Publication of JPH0329295B2 publication Critical patent/JPH0329295B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP60073513A 1985-04-09 1985-04-09 絶縁膜形成方法 Granted JPS61232626A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60073513A JPS61232626A (ja) 1985-04-09 1985-04-09 絶縁膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60073513A JPS61232626A (ja) 1985-04-09 1985-04-09 絶縁膜形成方法

Publications (2)

Publication Number Publication Date
JPS61232626A JPS61232626A (ja) 1986-10-16
JPH0329295B2 true JPH0329295B2 (enrdf_load_stackoverflow) 1991-04-23

Family

ID=13520400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60073513A Granted JPS61232626A (ja) 1985-04-09 1985-04-09 絶縁膜形成方法

Country Status (1)

Country Link
JP (1) JPS61232626A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098542A (zh) * 2016-06-20 2016-11-09 中国工程物理研究院电子工程研究所 一种提升碳化硅功率器件反向阻断电压的方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147435A (ja) * 1983-02-10 1984-08-23 Mitsui Toatsu Chem Inc 酸化シリコン膜の形成法

Also Published As

Publication number Publication date
JPS61232626A (ja) 1986-10-16

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term