JPH03289555A - Gas sensor - Google Patents
Gas sensorInfo
- Publication number
- JPH03289555A JPH03289555A JP9280590A JP9280590A JPH03289555A JP H03289555 A JPH03289555 A JP H03289555A JP 9280590 A JP9280590 A JP 9280590A JP 9280590 A JP9280590 A JP 9280590A JP H03289555 A JPH03289555 A JP H03289555A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- detection
- parts
- detecting parts
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims abstract description 55
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 239000003054 catalyst Substances 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 61
- 238000010586 diagram Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011120 plywood Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、可燃性のガスを検知するガスセンサに関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a gas sensor for detecting flammable gas.
近年、ガス漏れを検知するものとして、ガス濃度を測定
する３、０２ （酸化スズ）等の半導体のガスセンサか
用いられている。そこでガスセンサにおいては、誤検出
を減少させるためにガス濃度のみならず、ガスの種類を
も判別するガスの選択性の向上が要求されている。この
ため、複数の検知部でそれぞれ検知感度を異ならせて選
択性を向上させる必要がある。In recent years, semiconductor gas sensors such as 3,02 (tin oxide) that measure gas concentration have been used to detect gas leaks. Therefore, in gas sensors, in order to reduce false detections, there is a need to improve gas selectivity to determine not only the gas concentration but also the type of gas. Therefore, it is necessary to improve selectivity by making the detection sensitivities different among the plurality of detection units.
の種類を選択させ、触媒を変えることによって感度を調
整しようとするものである。The aim is to adjust the sensitivity by selecting the type of catalyst and changing the catalyst.
従来、ガスセンサは、３．０２．２．０（酸化亜鉛）の
ような半導体の検知部が可燃性ガス、例えば０．（酸素
）、Ｈ２（水素）、炭化水素等を吸着することにより、
その導電性が変化する性質を利用して作られている。こ
のようなガスセンサはガス流量管内に設置され、該ガス
センサを一定温度（例えば２００℃）に保っている。そ
して、ガス濃度が増加するに従って導電（抵抗値）変化
し、一定値以上となったときにガス漏れ等を検知する。Conventionally, gas sensors have a detection part made of a semiconductor such as 3.02.2.0 (zinc oxide) that detects a combustible gas, such as 0.2.2.0 (zinc oxide). By adsorbing (oxygen), H2 (hydrogen), hydrocarbons, etc.
It is made by taking advantage of its property of changing conductivity. Such a gas sensor is installed in a gas flow pipe, and is maintained at a constant temperature (for example, 200° C.). Then, as the gas concentration increases, the conductivity (resistance value) changes, and when it exceeds a certain value, gas leakage or the like is detected.
一方、上記ガスセンサの検知部を種類を異ならせて複数
個集積してガスセンサを構成することも知られている。On the other hand, it is also known to configure a gas sensor by integrating a plurality of detection parts of different types of gas sensors.
この場合のガスセンサは、例えばＳ、Ｏ２の検知部、２
．０の検知部と、これらの触媒の多少で別のｓ、、ｏ２
、ｚ、ｏの検知とを集積して構成し、一定温度で動作さ
せる。これは、検知部の材質を変えることによって検出
するガス〔発明が解決しようとする課題〕
しかし、検知部が単一のガスセンサは、いずれのガスで
あっても、一定の濃度以上のときに検知するものであり
、ガスの種類を選択するものでなく誤検出が多い。また
、検知部が複数のガスセンサでは、ある程度のガスの選
択性を有するものの十分でなく、誤検出を生じるという
問題がある。In this case, the gas sensor includes, for example, an S, O2 detection section, 2
．． 0 detection part and different s,,o2 depending on the amount of these catalysts
, z, and o detection, and is operated at a constant temperature. This is a gas that is detected by changing the material of the detection part (a problem to be solved by the invention). However, a gas sensor with a single detection part detects any gas when the concentration is above a certain level. It does not select the type of gas, and there are many false positives. Further, a gas sensor having a plurality of detection parts has a certain degree of gas selectivity, but is not sufficient, and there is a problem that false detection occurs.
そこで、本発明は上記課題に鑑みなされたもので、ガス
の選択性を向上させて誤検出を防止するガスセンサを提
供することを目的とする。Therefore, the present invention was made in view of the above problems, and an object of the present invention is to provide a gas sensor that improves gas selectivity and prevents false detection.
第１図に第１の発明の原理説明を示す。第１図における
ガスセンサＩＡは、基板２上に所定の半導体で形成され
た複数個の検知部３ａ〜３ｄが直線状に配置されたもの
である。このガスセンサＩＡはガス流量管４内に、ガス
５の流れ方向と該検知部３ａ〜３ｄの直線状配列が一致
するように配置されるものである。FIG. 1 shows an explanation of the principle of the first invention. The gas sensor IA shown in FIG. 1 has a plurality of detection parts 3a to 3d formed of a predetermined semiconductor arranged on a substrate 2 in a straight line. This gas sensor IA is arranged in the gas flow pipe 4 so that the flow direction of the gas 5 and the linear arrangement of the detection parts 3a to 3d match.
また、第２図に第２の発明の原理説明図を示す。Further, FIG. 2 shows a diagram explaining the principle of the second invention.
第２図におけるガスセンサＩＢは、台板４上に、基板２
ａ〜２ｄ上所定の半導体で形成された検知部３ａ〜３ｄ
が複数個集積される。そして、検知部３ａ〜３ｄのそれ
ぞれに、該それぞれの検知部で温度を異ならせて加熱す
る加熱部７ａ〜７ｄか設けられるものである。なお、８
ａ〜８ｂは電極であり、抵抗値（導電率）を測定する。The gas sensor IB in FIG.
Detection parts 3a to 3d formed of a predetermined semiconductor on a to 2d
are accumulated. Each of the detection parts 3a to 3d is provided with a heating part 7a to 7d that heats each detection part to a different temperature. In addition, 8
Reference numerals a to 8b are electrodes, which measure the resistance value (conductivity).
第１図に示すように、ガス５の流れ方向に検知部３ａ〜
３ｄが配設されている。従って、例えばガス５の活性か
強ければ入口付近の検知部３ａの導電率が高く、ガス５
の活性が強ければ出口付近の検知部３ｄの導電率が低く
なる。このことが第３図（Ａ）のグラフに示される。な
お、第３図（Ａ）のグラフでは、実線が活性の強いガス
の場合で、破線が活性の弱いガスの場合の検知部３ａ、
３ｄの特性（導電率）を示している。As shown in FIG. 1, in the flow direction of the gas 5,
3d is arranged. Therefore, for example, if the activity of the gas 5 is strong, the conductivity of the detection part 3a near the inlet will be high, and the gas 5 will have a high conductivity.
The stronger the activity, the lower the conductivity of the detection part 3d near the exit. This is shown in the graph of FIG. 3(A). In addition, in the graph of FIG. 3(A), the solid line indicates the case of highly active gas, and the broken line indicates the detection unit 3a, when the case of weakly active gas.
3D characteristics (conductivity).
また、第２図に示すように、集積された複数個の検知部
３ａ〜３ｄのそれぞれに、各検知部３ａ〜３ｄの温度を
異ならせて加熱する加熱部７ａ〜７ｄを設けている。す
なわち、加熱温度により検知部３ａ〜３ｄの感度を異な
らせているもので、ガスの種類により検知する検知部を
異ならせるものである。例えば、ガスの種類による導電
率−温度特性か第３図（Ｂ）のグラフに示される。この
場合、実線かＣｏ（−酸化炭素）のようなガスの場合で
あり、破線がアルコールのような炭化水素のガスの場合
である。Further, as shown in FIG. 2, each of the plurality of integrated detection sections 3a to 3d is provided with heating sections 7a to 7d that heat the detection sections 3a to 3d at different temperatures. That is, the sensitivity of the detection sections 3a to 3d is varied depending on the heating temperature, and the detection section that detects the gas is varied depending on the type of gas. For example, the conductivity-temperature characteristics depending on the type of gas are shown in the graph of FIG. 3(B). In this case, the solid line is for a gas such as Co (-carbon oxide), and the broken line is for a hydrocarbon gas such as alcohol.
このように、各検知部３ａ〜３ｄの出力状態でガスの種
類か特定されることにより、ガスの選択性が向上し、誤
検出が防止される。In this way, by identifying the type of gas based on the output state of each of the detection units 3a to 3d, gas selectivity is improved and erroneous detection is prevented.
第４図及び第５図に第１の発明の一実施例の概念図を示
す。第４図及び第５図は検知部を示したもので、第１図
に示すようなガス５の供給されるガス流量管４内に設置
される。FIGS. 4 and 5 show conceptual diagrams of an embodiment of the first invention. 4 and 5 show the detection section, which is installed in the gas flow pipe 4 to which gas 5 is supplied as shown in FIG. 1.
第４図（Ａ）において、基板（図示せず）上に、例えば
ｓ、ｏ、、ｚ、ｏ等の半導体で形成される検知部３ａ〜
３ｄの両端に電極８ａ、８ｂが設けられる。この電極８
ａ、８ｂは検知部３ａ〜３ｄの抵抗値（導電率）の変化
を測定出力するためのもので、以降の図では省略する。In FIG. 4(A), sensing parts 3a to 3a formed of semiconductors such as s, o, z, o, etc. are formed on a substrate (not shown).
Electrodes 8a and 8b are provided at both ends of 3d. This electrode 8
Reference characters a and 8b are for measuring and outputting changes in resistance values (conductivity) of the detection units 3a to 3d, and are omitted from subsequent figures.
この場合、検知部３ａ〜３ｄである半導体には所定量の
Ｐｔ（白金）、Ｐｄ（パラジウム）等の触媒金属９が添
加されている。例えば、検知部３ａには触媒金属を添加
せず、検知部３ｂ〜３ｄに触媒金属９を短冊状で順次増
量しつつ添加している。これは、添加される触媒金属９
の量に応じて検知部の検出感度が向上されるからであり
、第１図におけるガス流量管４の出口方向に従って感度
を高くしている。In this case, a predetermined amount of catalyst metal 9 such as Pt (platinum) or Pd (palladium) is added to the semiconductors that are the detection parts 3a to 3d. For example, the catalyst metal 9 is not added to the detection part 3a, but the catalyst metal 9 is added to the detection parts 3b to 3d in increasing amounts in the form of strips. This is due to the added catalytic metal 9
This is because the detection sensitivity of the detection unit is improved according to the amount of gas, and the sensitivity is increased according to the exit direction of the gas flow pipe 4 in FIG.
なお、触媒金属９は短冊形状に限らず、第４図（Ｂ）に
示すようなドツト形状とし、その数（量）によって感度
を変化させることもできる。Note that the catalyst metal 9 is not limited to the shape of a strip, but can also be shaped like a dot as shown in FIG. 4(B), and the sensitivity can be changed depending on the number (amount) of the catalyst metal.
また、検知部３ａ〜３ｄの基板２の下部には、第４図（
Ｃ）に示すように、加熱体ｌＯが設けられ、例えば２０
０°Ｃ〜３００°Ｃで一定に加熱される。Further, at the bottom of the substrate 2 of the detection units 3a to 3d, as shown in FIG.
As shown in C), a heating element lO is provided, for example 20
Constantly heated between 0°C and 300°C.
この加熱は半導体で形成される検知部３ａ〜３ｄでガス
を検出するための必要な条件となる。すなわち、該半導
体の電気伝導をエネルギー準位で考えた場合、電気伝導
に寄与される十分な数の電子を導電帯に引き上げるため
である。This heating becomes a necessary condition for detecting gas in the detection parts 3a to 3d formed of semiconductors. That is, when electrical conduction of the semiconductor is considered in terms of energy levels, this is to pull a sufficient number of electrons contributing to electrical conduction to the conduction band.
このようなガスセンサＩＡが第１図のガス流量管４内に
設置されたときに、供給される０２、Ｈ２、炭化水素等
の可燃性のガス５が検知部３ａ〜３ｄの半導体及び触媒
金属９に吸着し、触媒金属９の量に応じて抵抗値（導電
率）が変化する。When such a gas sensor IA is installed in the gas flow pipe 4 shown in FIG. The resistance value (conductivity) changes depending on the amount of catalyst metal 9.
これを電極８ａ〜８ｄにより測定して、ガスの種類を判
別するものである。This is measured by the electrodes 8a to 8d to determine the type of gas.
また、第５図に第１発明の他の実施例の概念図を示す。Further, FIG. 5 shows a conceptual diagram of another embodiment of the first invention.
第５図におけるガスセンサＩＡは、各検知部３ａ〜３ｄ
に対応する基板２の下部に、加熱体Ｈａ〜ｌｉｄを順次
密度を変えて設けたものであり、各検知部３ａ〜３ｄの
感度を異ならせたものである。例えば、各検知部３ａ〜
３ｄの温度を２００℃〜３００°Ｃ又は４００℃〜５０
０°Ｃに設定すべく加熱体１１ａ〜ｌｉｄを設ける。こ
の場合のガス５の検出については第４図と同様である。The gas sensor IA in FIG.
The heating elements Ha to lid are provided at the lower part of the substrate 2 corresponding to the heating elements Ha to lid in successive densities, and the sensitivities of the detection parts 3a to 3d are made to be different. For example, each detection unit 3a~
3d temperature from 200℃ to 300℃ or 400℃ to 50℃
Heating bodies 11a to lid are provided to set the temperature to 0°C. Detection of gas 5 in this case is the same as that shown in FIG. 4.
次に、第６図に第２の発明の一実施例の概念図を示す。Next, FIG. 6 shows a conceptual diagram of an embodiment of the second invention.
第６図は、第２図に示す検知部３ａ、３ｂの基板２ａ、
２ｂの下部に設けられた加熱部７ａ、７ｂを示したもの
である。第６図（Ａ）、（Ｂ）において、加熱部７ａ、
７ｂを例えばｐｔのヒータでつづら折り形状に設けてお
り、加熱部７ｂは加熱部７ａより全長を長く設定して温
度を異ならせている。同様に、図示しないが加熱部７ｃ
、７ｄにおいても全長を加熱部７ｂより順次長く設定し
、集積された検知部３ａ〜３ｄの加熱温度を異ならせて
、感度を異ならせている。例えば、加熱温度は１００°
Ｃ〜４００℃に設定される。FIG. 6 shows the substrates 2a and 3b of the detection units 3a and 3b shown in FIG.
2b shows heating parts 7a and 7b provided at the bottom of 2b. In FIGS. 6(A) and (B), the heating section 7a,
7b is provided in a meandering shape using a PT heater, for example, and the heating section 7b is set to have a longer overall length than the heating section 7a to have different temperatures. Similarly, although not shown, the heating section 7c
, 7d as well, the overall length is set sequentially longer than that of the heating section 7b, and the heating temperature of the integrated detection sections 3a to 3d is varied to vary the sensitivity. For example, the heating temperature is 100°
The temperature is set at ℃~400℃.
これにより、ガスの種類により、感度の異なる検知部が
その導電率を変化させることから、該検知部３ａ〜３ｄ
の温度を異ならせておくことにより、ガスの種類を特定
することかできる。As a result, the detection sections 3a to 3d have different sensitivities and change their conductivity depending on the type of gas.
By making the temperatures different, the type of gas can be identified.
なお、上記第１及び第２の発明の実施例では検知部を４
個とした場合を示したが、これに限らす複数個で構成し
ても同様である。In addition, in the embodiments of the first and second inventions, the detection section is
Although the case is shown in which there are two or more pieces, the configuration is not limited to this, and the same is true even if a plurality of pieces are used.
以上のように本発明によれば、検知するガスの流れ方向
に複数個の検知部を配設し、また、集積された検知部の
それぞれの温度を加熱部で異ならせることにより、ガス
の選択性を向上させることができ、ガスの誤検出を防止
することができる。As described above, according to the present invention, a plurality of detection sections are arranged in the flow direction of the gas to be detected, and the temperature of each of the integrated detection sections is made different by the heating section, so that the gas can be selected. It is possible to improve the performance and prevent erroneous detection of gas.
第１図は第１の発明の原理説明図、
第２図は第２の発明の原理説明図、
第３図は第１図及び第２図における検知特性のグラフ、
第４図は第１の発明の一実施例の概念図、第５図は第１
の発明の他の実施例の概念図、第６図は第２の発明の一
実施例の概念図である。
図において、
ＩＡ、ＩＢはガスセンサ、
２゜
２ａ〜２ｄは基板、
３ａ〜３ｄは検知部、
４はガス流量管、
５はガス、
６は合板、
７ａ〜７ｄは加熱部、
ａ〜８ｄは電極、
９は触媒金属、
■
０゜
１ ａ〜１
■
ｄは加熱体を示す。Figure 1 is a diagram explaining the principle of the first invention, Figure 2 is a diagram explaining the principle of the second invention, Figure 3 is a graph of the detection characteristics in Figures 1 and 2, and Figure 4 is a diagram explaining the principle of the second invention. A conceptual diagram of an embodiment of the invention, FIG.
FIG. 6 is a conceptual diagram of another embodiment of the second invention. In the figure, IA and IB are gas sensors, 2゜2a to 2d are substrates, 3a to 3d are detection parts, 4 is gas flow tube, 5 is gas, 6 is plywood, 7a to 7d are heating parts, and a to 8d are electrodes. , 9 is a catalytic metal; (1) 0°1 a to 1 (2) d is a heating element.
Claims (2)
（３ａ〜３ｄ）の導電性変化によりガス（５）を検知す
るガスセンサにおいて、 前記検知部（３ａ〜３ｄ）を、前記ガス（５）の流れ方
向に複数個配設することを特徴とするガスセンサ。(1) In a gas sensor that detects a gas (5) by a change in conductivity of a detection part (3a to 3d) formed of a predetermined semiconductor on a substrate (2), the detection part (3a to 3d) is connected to the gas (5) A gas sensor characterized in that a plurality of gas sensors are arranged in the flow direction.
た検知部（３ａ〜３ｄ）を複数個集積し、これらの導電
性変化によりガス（５）を検知するガスセンサにおいて
、 前記検知部（３ａ〜３ｄ）のそれぞれに、該それぞれの
検知部（３ａ〜３ｄ）で温度を異ならせて加熱する加熱
部（７ａ〜７ｄ）を設けることを特徴とするガスセンサ
。(2) A gas sensor in which a plurality of detection parts (3a to 3d) formed of a predetermined semiconductor are integrated on a substrate (2a to 2d), and the gas (5) is detected by a change in conductivity of these parts, wherein the detection part (3a-3d), each of which is provided with a heating section (7a-7d) that heats the detection section (3a-3d) at a different temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9280590A JPH03289555A (en) | 1990-04-06 | 1990-04-06 | Gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9280590A JPH03289555A (en) | 1990-04-06 | 1990-04-06 | Gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03289555A true JPH03289555A (en) | 1991-12-19 |
Family
ID=14064629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9280590A Pending JPH03289555A (en) | 1990-04-06 | 1990-04-06 | Gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03289555A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008018243A1 (en) * | 2006-08-11 | 2008-02-14 | Kabushiki Kaisha Atsumitec | Hydrogen gas concentration sensor and apparatus for determining hydrogen gas concentration |
| WO2014034935A1 (en) * | 2012-09-03 | 2014-03-06 | 学校法人加計学園 | Gas sensor array, gas analysis method, and gas analysis system |
| JP2015200644A (en) * | 2014-04-07 | 2015-11-12 | イノチップ テクノロジー シーオー エルティディー | Sensor device |
| WO2022085144A1 (en) * | 2020-10-22 | 2022-04-28 | 株式会社ソニー・インタラクティブエンタテインメント | Gas sensor device, information processing device, and smell presentation system |
-
1990
- 1990-04-06 JP JP9280590A patent/JPH03289555A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008018243A1 (en) * | 2006-08-11 | 2008-02-14 | Kabushiki Kaisha Atsumitec | Hydrogen gas concentration sensor and apparatus for determining hydrogen gas concentration |
| JP2008045917A (en) * | 2006-08-11 | 2008-02-28 | Atsumi Tec:Kk | Hydrogen gas concentration sensor and hydrogen gas concentration measuring instrument |
| KR101359285B1 (en) * | 2006-08-11 | 2014-02-05 | 가부시키가이샤 아쯔미테크 | Hydrogen-gas concentration sensor and hydrogen-gas concentration measuring device |
| WO2014034935A1 (en) * | 2012-09-03 | 2014-03-06 | 学校法人加計学園 | Gas sensor array, gas analysis method, and gas analysis system |
| JP5804438B2 (en) * | 2012-09-03 | 2015-11-04 | 学校法人加計学園 | Gas sensor array, gas analysis method, and gas analysis system |
| US9759676B2 (en) | 2012-09-03 | 2017-09-12 | Kake Educational Institution | Gas sensor array, gas analysis method, and gas analysis system |
| JP2015200644A (en) * | 2014-04-07 | 2015-11-12 | イノチップ テクノロジー シーオー エルティディー | Sensor device |
| WO2022085144A1 (en) * | 2020-10-22 | 2022-04-28 | 株式会社ソニー・インタラクティブエンタテインメント | Gas sensor device, information processing device, and smell presentation system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6335140B2 (en) | Multi-function potentiometric gas sensor array with integrated temperature control and temperature sensor | |
| US5767388A (en) | Methane sensor and method for operating a sensor | |
| US4584867A (en) | Device for selectively determining the components of gas mixtures by means of a gas sensor | |
| KR101275972B1 (en) | NOx SENSOR AND METHODS OF USING THE SAME | |
| JP5255066B2 (en) | Gas sensor with improved selectivity | |
| JP3385248B2 (en) | Gas sensor | |
| US20190293590A1 (en) | Multi-parametric sensor with bridge structure | |
| US20230115363A1 (en) | Multi-dimensional multi-parameter gas sensor and manufacturing method therefor, and gas detection method | |
| US4141955A (en) | Combustible concentration analyzer | |
| CN101568826B (en) | Sulfur component detection apparatus | |
| JPH03289555A (en) | Gas sensor | |
| RU2132551C1 (en) | Gas sensor operating process | |
| JP2003156470A (en) | Gas sensor element and detection method of gas concentration | |
| Manginell et al. | Overview of micromachined platforms for thermal sensing and gas detection | |
| JP4831582B2 (en) | Combustion device with CO sensor | |
| JP4156561B2 (en) | Combustible gas concentration measuring device | |
| JPH08278273A (en) | Gas detector | |
| JP3894657B2 (en) | Gas type discrimination method and gas type discrimination device | |
| CN219200691U (en) | Gas and piezoresistance type pressure sensor | |
| JPH04109157A (en) | Gas detecting element | |
| JP3575905B2 (en) | Gas type determination method and gas concentration measurement method | |
| JP3408897B2 (en) | Gasoline / light oil identification device and identification method | |
| KR101626970B1 (en) | Planar oxygen sensor element | |
| JPS62251648A (en) | Carbon monoxide detecting element | |
| JP2002116178A (en) | Nitrogen oxides sensor |