JPH0328834B2 - - Google Patents

Info

Publication number
JPH0328834B2
JPH0328834B2 JP57090498A JP9049882A JPH0328834B2 JP H0328834 B2 JPH0328834 B2 JP H0328834B2 JP 57090498 A JP57090498 A JP 57090498A JP 9049882 A JP9049882 A JP 9049882A JP H0328834 B2 JPH0328834 B2 JP H0328834B2
Authority
JP
Japan
Prior art keywords
layer
thyristor
base
diffusion
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57090498A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58207674A (ja
Inventor
Yoichi Araki
Takashi Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57090498A priority Critical patent/JPS58207674A/ja
Publication of JPS58207674A publication Critical patent/JPS58207674A/ja
Publication of JPH0328834B2 publication Critical patent/JPH0328834B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
JP57090498A 1982-05-29 1982-05-29 サイリスタの製造方法 Granted JPS58207674A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57090498A JPS58207674A (ja) 1982-05-29 1982-05-29 サイリスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57090498A JPS58207674A (ja) 1982-05-29 1982-05-29 サイリスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58207674A JPS58207674A (ja) 1983-12-03
JPH0328834B2 true JPH0328834B2 (enrdf_load_stackoverflow) 1991-04-22

Family

ID=14000162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57090498A Granted JPS58207674A (ja) 1982-05-29 1982-05-29 サイリスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58207674A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3531631A1 (de) * 1985-09-05 1987-03-05 Licentia Gmbh Asymmetrischer thyristor und verfahren zu seiner herstellung
JPS63144517A (ja) * 1986-12-09 1988-06-16 Nec Corp 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855662B2 (ja) * 1975-09-02 1983-12-10 株式会社東芝 ハンドウタイソウチノセイゾウホウホウ
JPS53133380A (en) * 1977-04-27 1978-11-21 Fuji Electric Co Ltd Manufacture of semiconductor element
JPS5938730B2 (ja) * 1978-03-24 1984-09-19 三菱電機株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS58207674A (ja) 1983-12-03

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