JPH03283660A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPH03283660A
JPH03283660A JP8463790A JP8463790A JPH03283660A JP H03283660 A JPH03283660 A JP H03283660A JP 8463790 A JP8463790 A JP 8463790A JP 8463790 A JP8463790 A JP 8463790A JP H03283660 A JPH03283660 A JP H03283660A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
nand cell
source
selecting
connected
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8463790A
Other versions
JP3085684B2 (en )
Inventor
Ryohei Kirisawa
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To reduce the number of selecting gates and thereby to attain high integration by a construction wherein source diffused layers of two NAND cell blocks adjacent to each other out of NAND cell blocks connected to adjacent bit lines are connected to a common source selected line.
CONSTITUTION: On the occasion of reading, the drain side of a NAND cell block B is connected to a selected bit line BL2 through a selecting gate. On the source side of this block B, no current flows even when a memory cell driven by a selected word line WL6 is put in continuity, since a selecting gate Qs2 of a source line SL2 is OFF. Accordingly, two NAND cell blocks A and B connected commonly to the bit line BL2 are selected by selecting gates Qs1 and Qs2 and only the data of the NAND cell block A are read out selectively. In this example, only one selecting gate is provided on the drain side of the NAND cell blocks. In order to conduct block selection, the selecting gate is provided by one to the source line on the source side. The selecting gate on the source side which conducts this block selection needs to be provided by one commonly.
COPYRIGHT: (C)1991,JPO&Japio
JP8463790A 1990-03-30 1990-03-30 Non-volatile semiconductor memory device Expired - Fee Related JP3085684B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8463790A JP3085684B2 (en) 1990-03-30 1990-03-30 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8463790A JP3085684B2 (en) 1990-03-30 1990-03-30 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPH03283660A true true JPH03283660A (en) 1991-12-13
JP3085684B2 JP3085684B2 (en) 2000-09-11

Family

ID=13836206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8463790A Expired - Fee Related JP3085684B2 (en) 1990-03-30 1990-03-30 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JP3085684B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5392238A (en) * 1993-04-12 1995-02-21 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5392238A (en) * 1993-04-12 1995-02-21 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date Type
JP3085684B2 (en) 2000-09-11 grant

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