JPH0328190A - Lb film substrate - Google Patents

Lb film substrate

Info

Publication number
JPH0328190A
JPH0328190A JP16074889A JP16074889A JPH0328190A JP H0328190 A JPH0328190 A JP H0328190A JP 16074889 A JP16074889 A JP 16074889A JP 16074889 A JP16074889 A JP 16074889A JP H0328190 A JPH0328190 A JP H0328190A
Authority
JP
Japan
Prior art keywords
film
substrate
lb
single crystal
surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16074889A
Inventor
Seiichi Kondo
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16074889A priority Critical patent/JPH0328190A/en
Publication of JPH0328190A publication Critical patent/JPH0328190A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To readily form a homogeneous ultrathin film of a single crystal without requiring regulation of substrate temperature or selection of a substrate excellent in conformity by growing a thin film of the single crystal on an Langmuir-Blodgett(LB) film substrate.
CONSTITUTION: A monomolecular film, such as stearic acid, is formed on the surface of water and compressed to a desired surface density with a barrier. In the process, the distance between mutual molecules constituting the LB film is set so as to be equal to the lattice constant of a substance from which a crystal is to be grown or a multiple of an integer thereof. Monomolecular films are then cumulated on a glass substrate, etc., to prepare the LB film. The number of cumulation is such that the homogeneity of the surface is improved. The resultant film is used as a substrate to grow a single crystal thin film, such as metal, semiconductor or oxide high temperature superconductor, by a vacuum deposition, sputtering, CVD method, etc. Thereby, the substrate sticking to the LB film substrate is not converted into an island-like structure. As a result, an ultrathin film excellent in crystallinity can be formed.
COPYRIGHT: (C)1991,JPO&Japio
JP16074889A 1989-06-26 1989-06-26 Lb film substrate Pending JPH0328190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16074889A JPH0328190A (en) 1989-06-26 1989-06-26 Lb film substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16074889A JPH0328190A (en) 1989-06-26 1989-06-26 Lb film substrate

Publications (1)

Publication Number Publication Date
JPH0328190A true JPH0328190A (en) 1991-02-06

Family

ID=15721607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16074889A Pending JPH0328190A (en) 1989-06-26 1989-06-26 Lb film substrate

Country Status (1)

Country Link
JP (1) JPH0328190A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0598361A1 (en) * 1992-11-18 1994-05-25 Rouvain M. Bension Initiation and bonding of diamond and other thin films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0598361A1 (en) * 1992-11-18 1994-05-25 Rouvain M. Bension Initiation and bonding of diamond and other thin films
US5455072A (en) * 1992-11-18 1995-10-03 Bension; Rouvain M. Initiation and bonding of diamond and other thin films

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