JPH03281780A - Cvd device - Google Patents

Cvd device

Info

Publication number
JPH03281780A
JPH03281780A JP8073990A JP8073990A JPH03281780A JP H03281780 A JPH03281780 A JP H03281780A JP 8073990 A JP8073990 A JP 8073990A JP 8073990 A JP8073990 A JP 8073990A JP H03281780 A JPH03281780 A JP H03281780A
Authority
JP
Japan
Prior art keywords
gas
groups
plurality
susceptor
flow rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8073990A
Inventor
Katsuhiko Mitani
Hiroshi Yanagisawa
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8073990A priority Critical patent/JPH03281780A/en
Publication of JPH03281780A publication Critical patent/JPH03281780A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To obtain a uniform gas flow in accordance with the pressure region of the gas in a wide range and the temp. range of a susceptor by providing a function which regulates the flow rate of gas and conductance at every group of a plurality of nozzles opposite to the susceptor.
CONSTITUTION: The gas supply system of a CVD device is constituted of a plurality of gas pipeline groups 12, flow rate controlling device groups 13 and conductance valve groups 14. A gas nozzle 17 opposite to a susceptor 16 is equipped in a reactor 15. The gas supply face of the gas nozzle 17 has a plurality of aperture groups 21-23 for supplying gas, which are distributed in a concentrical circular shape. These aperture groups are allotted to a plurality of kinds of gas system (a)-(c). Respective gas systems (a)-(c) independently perform flow rate control and conductor control. Thereby the partial pressure of reactive gas on the surface of a sample is uniformed for the gas pressure in a wide range and a CVD film having uniform film thickness is formed.
COPYRIGHT: (C)1991,JPO&Japio
JP8073990A 1990-03-30 1990-03-30 Cvd device Pending JPH03281780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8073990A JPH03281780A (en) 1990-03-30 1990-03-30 Cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8073990A JPH03281780A (en) 1990-03-30 1990-03-30 Cvd device

Publications (1)

Publication Number Publication Date
JPH03281780A true JPH03281780A (en) 1991-12-12

Family

ID=13726766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8073990A Pending JPH03281780A (en) 1990-03-30 1990-03-30 Cvd device

Country Status (1)

Country Link
JP (1) JPH03281780A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387289A (en) * 1992-09-22 1995-02-07 Genus, Inc. Film uniformity by selective pressure gradient control
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US5552017A (en) * 1995-11-27 1996-09-03 Taiwan Semiconductor Manufacturing Company Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow
US5669976A (en) * 1990-12-28 1997-09-23 Mitsubishi Denki Kabushiki Kaisha CVD method and apparatus therefor
US5853484A (en) * 1995-10-28 1998-12-29 Lg Semicon Co., Ltd. Gas distribution system and method for chemical vapor deposition apparatus
US5916369A (en) * 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
WO2002008487A1 (en) * 2000-07-24 2002-01-31 The University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US6500734B2 (en) 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
JP2003512519A (en) * 1999-10-20 2003-04-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Method and apparatus for controlling the uniformity of the wafer using a sensor spatially resolved
US6811651B2 (en) * 2001-06-22 2004-11-02 Tokyo Electron Limited Gas temperature control for a plasma process
US6829056B1 (en) 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
US7169231B2 (en) * 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
JP2007528603A (en) * 2004-03-09 2007-10-11 エム ケー エス インストルメンツ インコーポレーテッドMks Instruments,Incorporated Gas flow dividing system and method for a semiconductor manufacturing
US7347900B2 (en) * 2002-12-17 2008-03-25 Dongbu Electronics Co., Ltd. Chemical vapor deposition apparatus and method
US7494560B2 (en) * 2002-11-27 2009-02-24 International Business Machines Corporation Non-plasma reaction apparatus and method
US7534363B2 (en) 2002-12-13 2009-05-19 Lam Research Corporation Method for providing uniform removal of organic material
WO2009116576A1 (en) * 2008-03-21 2009-09-24 三井造船株式会社 Atomic layer film-forming device
KR100938875B1 (en) * 2007-07-24 2010-01-28 주식회사 에스에프에이 Chemical Vapor Deposition Apparatus for Flat Display

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6022811A (en) * 1990-12-28 2000-02-08 Mitsubishi Denki Kabushiki Kaisha Method of uniform CVD
US5669976A (en) * 1990-12-28 1997-09-23 Mitsubishi Denki Kabushiki Kaisha CVD method and apparatus therefor
US5387289A (en) * 1992-09-22 1995-02-07 Genus, Inc. Film uniformity by selective pressure gradient control
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US6500734B2 (en) 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
US5916369A (en) * 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
US5853484A (en) * 1995-10-28 1998-12-29 Lg Semicon Co., Ltd. Gas distribution system and method for chemical vapor deposition apparatus
US5552017A (en) * 1995-11-27 1996-09-03 Taiwan Semiconductor Manufacturing Company Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
JP2003512519A (en) * 1999-10-20 2003-04-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Method and apparatus for controlling the uniformity of the wafer using a sensor spatially resolved
WO2002008487A1 (en) * 2000-07-24 2002-01-31 The University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US6821910B2 (en) 2000-07-24 2004-11-23 University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US6811651B2 (en) * 2001-06-22 2004-11-02 Tokyo Electron Limited Gas temperature control for a plasma process
US7531061B2 (en) 2001-06-22 2009-05-12 Tokyo Electron Limited Gas temperature control for a plasma process
US7494560B2 (en) * 2002-11-27 2009-02-24 International Business Machines Corporation Non-plasma reaction apparatus and method
US7169231B2 (en) * 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US7371332B2 (en) 2002-12-13 2008-05-13 Lam Research Corporation Uniform etch system
US7534363B2 (en) 2002-12-13 2009-05-19 Lam Research Corporation Method for providing uniform removal of organic material
US8801892B2 (en) 2002-12-13 2014-08-12 Lam Research Corporation Uniform etch system
US7347900B2 (en) * 2002-12-17 2008-03-25 Dongbu Electronics Co., Ltd. Chemical vapor deposition apparatus and method
US6829056B1 (en) 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
JP2007528603A (en) * 2004-03-09 2007-10-11 エム ケー エス インストルメンツ インコーポレーテッドMks Instruments,Incorporated Gas flow dividing system and method for a semiconductor manufacturing
KR100938875B1 (en) * 2007-07-24 2010-01-28 주식회사 에스에프에이 Chemical Vapor Deposition Apparatus for Flat Display
WO2009116576A1 (en) * 2008-03-21 2009-09-24 三井造船株式会社 Atomic layer film-forming device

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