JPH03280420A - Manufacture of semiconductor thin film - Google Patents

Manufacture of semiconductor thin film

Info

Publication number
JPH03280420A
JPH03280420A JP8162590A JP8162590A JPH03280420A JP H03280420 A JPH03280420 A JP H03280420A JP 8162590 A JP8162590 A JP 8162590A JP 8162590 A JP8162590 A JP 8162590A JP H03280420 A JPH03280420 A JP H03280420A
Authority
JP
Japan
Prior art keywords
thin film
formed
layer
glass substrate
film layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8162590A
Other versions
JPH0760807B2 (en
Inventor
Takeshi Saito
Original Assignee
G T C:Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by G T C:Kk filed Critical G T C:Kk
Priority to JP8162590A priority Critical patent/JPH0760807B2/en
Publication of JPH03280420A publication Critical patent/JPH03280420A/en
Publication of JPH0760807B2 publication Critical patent/JPH0760807B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Abstract

PURPOSE: To make it possible to form a thin film, having large crystal diameter and excellent crystallinity, on a substrate having a large area by a method wherein a silicon thin film layer is formed on a glass substrate, and after the paste, which is formed by dispersing tin fine particles into an organic solvent, has been applied on the silicon thin film layer, the glass substrate is heated up to 232°C or higher, and then the substrate is slowly cooled down.
CONSTITUTION: The surface of a glass substrate having smooth surface is cleaned, and a silicon thin film layer 2 is formed thereon. Then the paste, formed by dispersing tin fine particles, is applied on the layer 2, and a tin-coated layer 3 is formed in matrix form. Then, the glass substrate 1 is heat-treated at 232°C or higher, and a matrix-shaped melt layer 4 is formed. Subsequently, the above material is slowly cooled down, and a polysilicon thin film layer 5 is formed in the silicon thin film 2 in matrix form. The above-mentioned polysilicon thin film layer 5 is grown using the crystal, deposited on the surface of the melt layer 4, as a nucleus, the layer 5 has large crystal grain diameter and also has excellent crystallinity.
COPYRIGHT: (C)1991,JPO&Japio
JP8162590A 1990-03-29 1990-03-29 The method of manufacturing a semiconductor thin film Expired - Fee Related JPH0760807B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8162590A JPH0760807B2 (en) 1990-03-29 1990-03-29 The method of manufacturing a semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8162590A JPH0760807B2 (en) 1990-03-29 1990-03-29 The method of manufacturing a semiconductor thin film

Publications (2)

Publication Number Publication Date
JPH03280420A true JPH03280420A (en) 1991-12-11
JPH0760807B2 JPH0760807B2 (en) 1995-06-28

Family

ID=13751514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8162590A Expired - Fee Related JPH0760807B2 (en) 1990-03-29 1990-03-29 The method of manufacturing a semiconductor thin film

Country Status (1)

Country Link
JP (1) JPH0760807B2 (en)

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786608A (en) * 1993-09-07 1995-03-31 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH07161635A (en) * 1993-12-02 1995-06-23 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JPH07183537A (en) * 1993-12-22 1995-07-21 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH07183536A (en) * 1993-12-22 1995-07-21 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH07231100A (en) * 1993-12-24 1995-08-29 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacturing method
US5879977A (en) * 1993-02-15 1999-03-09 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating a thin film transistor semiconductor device
US5923962A (en) * 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6074901A (en) * 1993-12-03 2000-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for crystallizing an amorphous silicon film and apparatus for fabricating the same
US6090646A (en) * 1993-05-26 2000-07-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6210997B1 (en) 1993-07-27 2001-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6232156B1 (en) 1994-02-03 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6285042B1 (en) 1993-10-29 2001-09-04 Semiconductor Energy Laboratory Co., Ltd. Active Matry Display
US6335555B1 (en) 1993-10-01 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a manufacturing method for the same
US6337229B1 (en) 1994-12-16 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of making crystal silicon semiconductor and thin film transistor
US6348367B1 (en) 1993-12-02 2002-02-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US6610142B1 (en) 1993-02-03 2003-08-26 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
US6624445B2 (en) 1993-12-22 2003-09-23 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method of manufacturing the same
US6753213B2 (en) 1994-07-28 2004-06-22 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
US6798023B1 (en) 1993-12-02 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film
US6875628B1 (en) 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US6919237B2 (en) 1994-06-02 2005-07-19 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating thin film transistors
JP2006319361A (en) * 2006-07-19 2006-11-24 Semiconductor Energy Lab Co Ltd Method for manufacturing crystalline silicon film, and semiconductor device
US7186601B2 (en) 1994-08-26 2007-03-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device utilizing a catalyst material solution
JP2007158368A (en) * 1993-12-24 2007-06-21 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US7767559B2 (en) 1994-06-02 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US8946718B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9366930B2 (en) 2002-05-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device with capacitor elements

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257124A (en) * 1984-06-01 1985-12-18 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS6212655A (en) * 1985-07-08 1987-01-21 Kawasaki Refractories Co Ltd Carbon-containing refractory brick
JPH01110776A (en) * 1987-10-23 1989-04-27 Mitsubishi Electric Corp Manufacture of semiconductor polycrystalline thin film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257124A (en) * 1984-06-01 1985-12-18 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS6212655A (en) * 1985-07-08 1987-01-21 Kawasaki Refractories Co Ltd Carbon-containing refractory brick
JPH01110776A (en) * 1987-10-23 1989-04-27 Mitsubishi Electric Corp Manufacture of semiconductor polycrystalline thin film

Cited By (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6610142B1 (en) 1993-02-03 2003-08-26 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
US5879977A (en) * 1993-02-15 1999-03-09 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating a thin film transistor semiconductor device
US6110770A (en) * 1993-02-15 2000-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor and process for fabricating the same
US6451638B1 (en) 1993-02-15 2002-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor and process for fabricating the same
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US6337231B1 (en) 1993-05-26 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6090646A (en) * 1993-05-26 2000-07-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6875628B1 (en) 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
US6465284B2 (en) 1993-07-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6210997B1 (en) 1993-07-27 2001-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JPH0786608A (en) * 1993-09-07 1995-03-31 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
US6835607B2 (en) 1993-10-01 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for manufacturing the same
US7301209B2 (en) 1993-10-01 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6335555B1 (en) 1993-10-01 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a manufacturing method for the same
US7170138B2 (en) 1993-10-01 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7998844B2 (en) 1993-10-29 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6335541B1 (en) 1993-10-29 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film transistor with crystal orientation
US6285042B1 (en) 1993-10-29 2001-09-04 Semiconductor Energy Laboratory Co., Ltd. Active Matry Display
US6998639B2 (en) 1993-10-29 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US5923962A (en) * 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6348367B1 (en) 1993-12-02 2002-02-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JPH07161635A (en) * 1993-12-02 1995-06-23 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
US7141461B2 (en) 1993-12-02 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6798023B1 (en) 1993-12-02 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film
US6074901A (en) * 1993-12-03 2000-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for crystallizing an amorphous silicon film and apparatus for fabricating the same
JPH07183537A (en) * 1993-12-22 1995-07-21 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
US6624445B2 (en) 1993-12-22 2003-09-23 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method of manufacturing the same
US6955954B2 (en) 1993-12-22 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JPH07183536A (en) * 1993-12-22 1995-07-21 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH07231100A (en) * 1993-12-24 1995-08-29 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacturing method
JP2007158368A (en) * 1993-12-24 2007-06-21 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US6232156B1 (en) 1994-02-03 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6417031B2 (en) 1994-02-03 2002-07-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US7749819B2 (en) 1994-02-23 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7235828B2 (en) 1994-02-23 2007-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with residual nickel from crystallization of semiconductor film
US6919237B2 (en) 1994-06-02 2005-07-19 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating thin film transistors
US7470575B2 (en) 1994-06-02 2008-12-30 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US7767559B2 (en) 1994-06-02 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US6753213B2 (en) 1994-07-28 2004-06-22 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
US7186601B2 (en) 1994-08-26 2007-03-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device utilizing a catalyst material solution
US6337229B1 (en) 1994-12-16 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of making crystal silicon semiconductor and thin film transistor
US9406806B2 (en) 2002-04-09 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9666614B2 (en) 2002-04-09 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10083995B2 (en) 2002-04-09 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US8946717B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10050065B2 (en) 2002-04-09 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8946718B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9366930B2 (en) 2002-05-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device with capacitor elements
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device
JP4675294B2 (en) * 2006-07-19 2011-04-20 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
JP2006319361A (en) * 2006-07-19 2006-11-24 Semiconductor Energy Lab Co Ltd Method for manufacturing crystalline silicon film, and semiconductor device

Also Published As

Publication number Publication date
JPH0760807B2 (en) 1995-06-28

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