JPH03257814A - X-ray exposure mask and manufacture thereof - Google Patents

X-ray exposure mask and manufacture thereof

Info

Publication number
JPH03257814A
JPH03257814A JP5705790A JP5705790A JPH03257814A JP H03257814 A JPH03257814 A JP H03257814A JP 5705790 A JP5705790 A JP 5705790A JP 5705790 A JP5705790 A JP 5705790A JP H03257814 A JPH03257814 A JP H03257814A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
deposited
si
ray
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5705790A
Other versions
JP2943217B2 (en )
Inventor
Yukari Shimizu
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To prevent an X-ray transmission film from being distorted and enable accuracy to be improved by forming an aluminum oxide film between an X-ray transmission film and a heavy metal film.
CONSTITUTION: An Si3N4 film is first deposited on one surface of an Si single crystal substrate 11 which is in (100) face orientation, a pattern 12 with an opening 13 is formed, and then an X-ray transmission film 14 consisting of the Si3N4 is deposited on the other surface. An aluminum oxide film 15 is deposited on this X-rays transmission film 14 by the RF sputtering method or the CVD method using an Al2O3 target and then a W film 16 is deposited on it by using the RF sputtering method. Then, a resist pattern 17 is formed by using the EB lithography or FIB lithography, a W film 16 is subjected to dry etching by SF6 gas with this resist pattern 17 as a protection film, and then an X-ray absorber pattern 18 is formed. Finally, anisotropic etching of the silicon substrate 11 is performed by using a KOH solution with the Si3N4 film 12 as a protection film, thus forming an X-ray exposure window 19.
COPYRIGHT: (C)1991,JPO&Japio
JP5705790A 1990-03-07 1990-03-07 X-ray exposure mask and a method of manufacturing the same Expired - Lifetime JP2943217B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5705790A JP2943217B2 (en) 1990-03-07 1990-03-07 X-ray exposure mask and a method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5705790A JP2943217B2 (en) 1990-03-07 1990-03-07 X-ray exposure mask and a method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH03257814A true true JPH03257814A (en) 1991-11-18
JP2943217B2 JP2943217B2 (en) 1999-08-30

Family

ID=13044819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5705790A Expired - Lifetime JP2943217B2 (en) 1990-03-07 1990-03-07 X-ray exposure mask and a method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP2943217B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291536A (en) * 1991-06-26 1994-03-01 Kabushiki Kaisha Toshiba X-ray mask, method for fabricating the same, and pattern formation method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291536A (en) * 1991-06-26 1994-03-01 Kabushiki Kaisha Toshiba X-ray mask, method for fabricating the same, and pattern formation method

Also Published As

Publication number Publication date Type
JP2943217B2 (en) 1999-08-30 grant

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