JPH03246863A - Ion implanter - Google Patents

Abstract

PURPOSE:To improve the maintenance property by providing a removable cover on a holding section other than a holding face holding works. CONSTITUTION:A disk 13 formed into a disk shape is rotatably provided at the end section of an ion beam guide pipe 12 for guiding an ion beam 11. Multiple clamp mechanisms 15 circularly holding multiple semiconductor wafers 14, e.g. clamping the peripheries of the semiconductor wafers 14, are provided along the outer periphery on the surface of the disk 13. A removably formed plate-shaped cover 16 is provided on an exposed section on the inside face of the disk 13. When the cover 16 is removed from a holding section and cleaned or replaced, contaminants stuck due to the radiation of the ion beam 11 can be easily removed. The maintenance property can be improved.

Description

[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to an ion implantation device.

(Prior Art) Generally, in an ion implantation apparatus, positively charged ions are accelerated by an electric field and irradiated onto a workpiece, and the ions are introduced into the workpiece.

Such an ion implanter can control the ion implantation amount, ion implantation depth, etc. with high precision. Such control is becoming an essential function, especially when introducing impurities into semiconductor wafers. This device was published in Japanese Patent Publication No. 63-184.
It is described in Publication No. 256, etc.

That is, as shown in FIG. 6, a disk 3 having a disk shape is provided at the end of the ion beam introduction tube 2 for guiding the ion beam 1. As shown in FIG. This disk 3 is provided with a plurality of clamp mechanisms 5 on its inner surface for holding a plurality of semiconductor wafers 4 in an annular arrangement.

A semiconductor wafer 4 is provided on each clamp mechanism 5 of this disk 3, and while the disk 3 is rotated as shown by the arrow, each semiconductor wafer 4 is irradiated with an ion beam 1 to implant ions. .

In such an ion implanter, the ion beam 1
With the irradiation, for example, the resist adhered to the surface of the semiconductor wafer 4 may scatter and adhere to the surface of the disk 3, or ion particles may stick to the surface of the disk 3, causing the disk 3 holding the semiconductor wafer 4 to or be contaminated.

Moreover, the contaminants once attached to the surface of the disk 3 and the like in this manner may peel off during ion implantation and adhere to the semiconductor wafer 4, thereby contaminating the semiconductor wafer 4.

For this reason, in conventional ion implanters, the disk is periodically removed and cleaned, for example, by ultrasonic cleaning using a predetermined solvent.

(Problem to be Solved by the Invention) However, since the disk of such an ion implantation apparatus includes, for example, a mechanism for clamping the semiconductor wafer, a mechanism for cooling the semiconductor wafer, etc., its weight is, for example, several 10 kilograms. Quite heavy. Therefore, there is a problem in that it takes a considerable amount of time and effort to remove the disk, wash it, and then reinstall the disk after cleaning.

The present invention has been made in response to such conventional circumstances, and an object thereof is to provide an ion implantation device that can improve maintainability compared to the prior art.

[Structure of the Invention] (Means for Solving the Problems) In other words, the present invention provides an ion implantation apparatus that implants ions by irradiating an ion beam onto an object to be processed held in a holding section. The present invention is characterized in that a removable cover is provided on the holding portion other than the holding surface.

(Function) In other words, the object to be processed is irradiated with the ion beam, but the ion beam irradiated to the holding part other than the object to be processed is irradiated to the detachable cover. This makes it possible to replace the cover.

As a result, by removing the cover from the holding portion and cleaning or replacing it, contaminants that have adhered due to ion beam irradiation can be easily removed.

(Embodiment) Hereinafter, an embodiment of the ion implantation apparatus of the present invention will be described with reference to the drawings.

As shown in FIG. 1, at the end of an ion beam introduction tube 12 for guiding the ion beam 11, a disc 13 configured in a disc shape is provided so as to be rotationally controllable.

Further, a rotating shaft is provided at the center of the disk 13 so as to be perpendicular to the disk surface. The surface of the disk 13 is provided so as to be irradiated with an ion beam 11.

A plurality of clamp mechanisms 15 are provided on the surface to hold a plurality of semiconductor wafers 14 (eg, more than ten) in an annular arrangement along the outer periphery, and to clamp the peripheral edge of the semiconductor wafers 14, for example. Further, a removably plate-shaped cover 16 is provided on the exposed portion of the inner surface of the disk 13.

As shown in FIGS. 2 to 4, the cover 16 is constructed by combining a plurality of two types of cover plates 16a and 16b made of metal or ceramics, for example, plates with a thickness of 5ts. There is.

That is, these cover plates 16a' and 16b are each configured to match the shape of the periphery of each clamp mechanism 15, and by providing these cover plates 16a116b so as to surround the periphery of the clamp mechanism 15, It is configured to cover the annular region of the disk 3 (excluding the portion of the clamp mechanism 15) without any gaps.

Further, these cover plates 16a and 16b are each fixed to the disk 13 by a fixing mechanism such as screws, and are configured to be removable one by one.

As is well known, the ion beam introduction tube 12 has an ion source, an ion extraction electrode, an ion extraction electrode,
A mass analysis magnet, an acceleration tube, a deflection electrode (all not shown), etc. are provided, and a desired ion beam 11 is formed by these.

In the ion implantation apparatus of this embodiment having the above configuration, one semiconductor wafer 14 is attached to each clamp mechanism 15 of the disk 13.
Place. Then, each semiconductor wafer 14 is irradiated with the ion beam 11 while the disk 13 is rotated as shown by the arrow in the figure, thereby implanting ions into these semiconductor wafers 14.

At this time, as the ion beam 11 is irradiated, for example, the resist deposited on the surface of the semiconductor wafer 14 is scattered and attached to various parts, or ion particles are attached to the ion beam 11 irradiation site. However, according to the ion implantation apparatus of this embodiment, such contaminants adhere to the surface of each cover plate 16a, 16b in the disk 13, but not to the disk 13.

Therefore, unlike the conventional ion implanter, the disk 1
These cover plates 16a, 16 without removing 3.
By removing and cleaning or replacing b, contaminants that have adhered due to irradiation with the ion beam 11 can be easily removed. Therefore, the labor and time required for maintenance to remove contaminants can be significantly reduced compared to the conventional method, and productivity can be improved.

In addition, in the above embodiment, the cover 16 was constructed from a plurality of cover plates 16a and 16b as described above from the viewpoint of ease of attachment and detachment, ease of processing, etc., but the present invention is not limited to such an embodiment. Instead, the cover 16 may be composed of, for example, - plate-like members, and even when it is composed of divided plate-like members, the number of divisions etc. is as shown in FIG. can be arbitrarily selected.

That is, as shown in FIG. 5(a), the cover 16c may be configured to cover the area of two wafers, or as shown in FIG. 5(b), the cover 16c may be configured to cover the area of two wafers. The wafer area may be covered with two divided covers 16d and 16e.

In the embodiment described above, generated dust is easily removed, but when a wafer is irradiated with a boron-based ion beam, for example, the cover is naturally also irradiated. At this time, boron is implanted into the cover. After that, when irradiating other types of wafers with an arsenic-based ion beam, the cover is of course also irradiated. At this time, the problem of the previous boron flying out from the cover and adversely affecting the wafer is also solved. That is, the problem can be overcome by replacing the cover for each type of ion beam.

[Effects of the Invention] As explained above, according to the ion implantation apparatus of the present invention, by removing and cleaning or replacing the cover, it is possible to easily remove contaminants that have adhered due to ion beam irradiation. This makes it possible to improve maintainability compared to the conventional method.

[Brief explanation of drawings]

FIG. 1 is a diagram showing the configuration of main parts of an ion implantation device according to an embodiment of the present invention, FIG. 2 is an enlarged view of the configuration of a disk of the ion implantation device of FIG. The figure shows the configuration of the cover plate of the ion implanter shown in Fig. 1, Fig. 5 is a partial explanatory view of the cover illustrating another shape of the cover that covers the disk of the ion source shown in Fig. 1, and Fig. 1 is a diagram showing a main part configuration of a conventional ion implantation device. DESCRIPTION OF SYMBOLS 11... Ion beam, 1 Introducing tube, 13... Disc, C, 15... Clamp mechanism, 6a, 16b... Cover plate. 2...Ion beam 14...Semiconductor sea urchin 16...Cover 1

Claims (1)

[Claims] (1) In an ion implantation device that implants ions by irradiating an ion beam onto an object to be processed held in a holding section, a removable cover is provided on the holding section other than the holding surface on which the object to be processed is held. An ion implantation device characterized by: