JPH03245529A - Apparatus and method for charged particle beam processing - Google Patents

Abstract

PURPOSE:To stabilize the operation of the title apparatus by a method wherein, when a reactive gas is led-in to perform the reactive etching process or beam assist deposition using charged particle beams, the secondary particle detector and electron shower are protected from the reactive gas. CONSTITUTION:A specimen 24 is irradiated with ion beams 2 simultaneously, the secondary ions are detected by the secondary particle detector to obtain scanning ion microscopic images and a stage is shifted while examining the images for setting up the processing position and region of the specimen 24. At this time, the secondary ions from the specimen 24 are amplified by a microchannel plate 11 so as to be detected by a detecting electrode 10 and then a shutter 13 is opened to spray the passed through secondary particles and a reactive gas over the specimen 24 with processing position and region previously set up using a nozzle 15. Furthermore, the positive charge stored in the specimen 24 by the beams 2 is neutralized by the electrons from an electron source 22 to perform the reactive etching process of the specimen 24 by the reactive gas activated by the beam 2.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to charged beam processing that uses a charged beam and a reactive gas to perform reactive etching, beam-assisted deposition, etc., and particularly relates to a secondary particle detector. The present invention relates to a charged beam processing device and a method thereof in which performance deterioration of an electron shower is prevented.

[Conventional technology]

2. Description of the Related Art In recent years, semiconductor devices such as LSIs have become more highly integrated and more functional, so wiring and elements are becoming more multilayered. For this reason, semiconductor devices in the development process do not always operate as designed, and for the purpose of debugging LSI designs or analyzing defects in the manufacturing process, wiring on the chip may be cut,
Alternatively, there is an increasing demand for circuit correction to be performed in a short time by connecting arbitrary parts. In such circuit modification, it is necessary to perform processing at dozens of locations on one LSI, and the processing must be performed at high speed and with a high yield of nearly 100%.

Among these methods, the conventional method for cutting wiring has been the sputtering method in which atoms of the wiring material are ejected using a focused ion beam, but this method requires slow processing speed and On the other hand, there were problems such as low selectivity and high processing speed for sloped surfaces, making it difficult to accurately process the unevenness of each layer.

On the other hand, chemically reactive etching, which combines a reactive gas with a charged beam such as a focused ion beam or electron beam, allows processing to be performed at a speed several tens of times faster than sputtering, and the type of reactive gas can be selected. This makes it possible to increase the selectivity for the lower layer of the layer to be processed, and enables highly accurate processing without damaging the lower layer even for samples with severe irregularities.

Here, as a conventional example in which reactive etching is locally used at a portion irradiated with a charged beam such as a focused ion beam or an electron beam, there is a method described in Japanese Patent Laid-Open No. 1-169858.

[Problem to be solved by the invention]

In the above-mentioned prior art, no consideration was given to the influence of the reactive gas on the secondary particle detector for image detection. Therefore, when a reactive gas is introduced into the chamber, the reactive gas hits the secondary particle detector due to diffusion, and the voltage applied to the secondary particle detector at that time imparts active energy to the reactive gas. Put it away.

As a result, there is a problem in that the metal on the surface of the secondary particle detector is corroded and its performance deteriorates, making it necessary to frequently replace it.

Furthermore, when the workpiece is an insulator, the surface of the workpiece is charged up due to the charge from the ion beam. Therefore, the ion beam is repelled and bent near the surface of the workpiece. In this state, a problem arises in that the machining position accuracy is poor.

In order to solve this problem, there is a method using an electron shower described in Japanese Patent Laid-Open No. 61-248346 as a method of neutralizing the electric charges on the surface of the workpiece. This involves covering the surface of the workpiece around the ion beam irradiation point with electrons from the electron gun, and using these electrons to neutralize the positive charges of the ion beam accumulated on the surface. This is a method of irradiating a location. However, in this conventional technique, no consideration is given to the influence of the reactive gas on the electron shower, and there is a problem in that the performance of the electron shower deteriorates due to one reactive gas.

The object of the present invention is to provide a charged beam processing device that can perform reactive etching without deteriorating the performance of a secondary particle detector and an electron shower due to reactive gas, and a charged beam film forming device that can similarly perform beam assisted deposition. Our goal is to provide a method for doing so.

[Means to solve the problem]

The above purpose is to prevent performance deterioration of the secondary particle detector. 1. When performing reactive etching by supplying a reactive gas, a shutter mechanism is installed in front of the secondary particle detector to block the reactive gas, and Iil! At time m, the shutter is opened and the secondary particle detector is turned on.
This can be accomplished by turning off the secondary particle detector, closing the shutter, and then switching to supplying the reactive gas.

This can also be achieved by using, as a secondary particle detector, a scintillator or the like having a protective film on its surface that is durable against reactive gases.

Furthermore, this can also be achieved by placing the secondary particle detector in a housing separate from the processing chamber and differentially pumping or cooling the housing.

Among the above objectives, prevention of performance deterioration of the electron shower can be achieved by providing an orifice in the electron gun and performing differential pumping.

It can also be achieved by using a cathode heating type electron generation mechanism as the electron source for the electron shower.

[Effect]

Among the above configurations, in a device with a shutter mechanism provided in front of the secondary particle detector, the shutter is opened during observation, and the
The secondary particle detector is turned on, the shutter is closed during processing, the secondary particle detector is turned off, and then reactive gas is supplied. From processing to i! When moving on to detection, the performance of the secondary particle detector can be improved by exhausting the reactive gas, opening the shutter after blowing off the reactive gas by supplying an inert gas, and turning on the secondary particle detector. Secondary particles can be detected without deterioration.

In a configuration in which a secondary particle detector uses a scintillator with a protective film that is durable against reactive gases, even if the reactive gas hits one surface, there is no effect on the scintillator itself; By choosing the material, the original performance of the secondary particle detector will not be affected.

In a configuration in which the secondary particle detector is placed inside a housing and the housing is differentially pumped, the amount of reactive gas that hits the secondary particle detector is reduced, and in a configuration in which the housing is cooled, Since the reactive gas that hits the inner wall is adsorbed, deterioration of the performance of the secondary particle detector can be prevented.

Next, regarding the electron shower, if an orifice is provided at the tip of the electron source and a differentially pumped electron gun is used, the amount of reactive gas entering the electron gun can be reduced, and the amount of reactive gas entering the electron gun can be reduced. By exhausting the toxic gas immediately after processing, deterioration in the performance of the electron source can be prevented.

In addition, in a configuration that uses an electron emission method by heating the cathode body as a means of supplying electrons, by making the cathode body thick, even if the cathode body is sputtered by reactive gas, it is only a small amount, so it can be easily replaced. frequency can be reduced, and the effects of performance deterioration can be substantially avoided.

〔Example〕

Hereinafter, the present invention will be described in detail with reference to the drawings.

Embodiment 1: FIG. 1 shows a configuration diagram of a device according to a first embodiment of the present invention.

Although this embodiment uses a focused ion beam as the charged beam, almost the same processing can be performed using an electron beam.

In the figure, an extraction electrode 3 for extracting the ion beam 2 from the ion source 1 and the extracted ion beam 2 are focused in the IB chamber 26.

front-stage focusing lens 4, aperture 5. There is a focused ion beam optical system consisting of a post-stage focusing lens 6 and a deflector electrode 8 that deflects the ion beam, and these are controlled by an ion beam controller 28. Furthermore, a through hole for passing the ion beam 2 is provided at the bottom of the IB chamber 26 .

The main chamber 27 includes a stage 251 on which the sample 24 is mounted, and a nozzle 15 for spraying reactive gas onto the sample 24. A reactive gas cylinder 18 is connected to this nozzle 15 via a flow rate adjustment valve 16. Additionally, a secondary particle detector is provided to detect secondary particles generated from the sample 24 upon irradiation with the ion beam 2, and an electron shower is provided to neutralize the positive charges of the ion beam 2 accumulated on the surface of the sample 24. There is.

The main chamber 27 is kept in a vacuum by an exhaust pipe and an exhaust device (not shown). Here, 29 is an electronic shower power supply, 30 is a stage controller that controls the stage 25, 31 is a controller that controls the gas supply/exhaust valve, and 32 is a controller that controls the secondary particle detector and the shutter opening/closing. , these controllers including the ion beam controller 28 are controlled by a computer 33.

The secondary particle detector includes a drawing electrode 12 for drawing secondary particles into the microchannel plate l-11.
, a detection electrode 10 for detecting secondary particles amplified by the microchannel plate 11, and an ion beam 2.
A grounded shield electrode 9 is used to avoid disturbing the electric field in the passage of the microchannel plate 11.
A shutter 13 driven by a drive device 14 is inserted between the microchannel plate 11 and the microchannel plate 11 . The electron shower is made by focusing electrons emitted from an electron source 22 built into the electron gun 19 with a lens 23, and supplying the electrons through an orifice provided at the tip of the electron gun 19 through a valve 21. Differential exhaust is provided by an exhaust device (not shown). Note that the gate valve 20 is for isolating the electron source 22 from the main chamber 27 when replacing it.

Next, an example of a control process during LSI processing using the apparatus of this embodiment and the operation of each part will be explained with reference to FIGS. 2 and 3. Figure 2 shows the state of each element during observation and processing in sequence, and Figure 3 shows the state of each element during observation and processing.
This is a schematic diagram showing the state of each element during processing.

First, the sample 24 is irradiated with the ion beam 2, secondary ions emitted at the same time are detected by a secondary particle detector, and while a scanning ion microscope image (hereinafter referred to as SIM image) is obtained and observed, the stage 25 is It is controlled and moved by the controller 30 to set the processing position and processing area of the sample 24. At this time, microchannel plate 1
A voltage of v2 is applied to 1 and a voltage of vo is applied to the extraction electrode 12, and the secondary ions emitted from the sample 24 are accelerated by the voltage of vo, drawn into the microchannel plate 11, amplified, and detected by the detection electrode 10. . Further, the shutter 13 is
The electron shower is in the "open" state where it is drawn to the right side of the figure and allows secondary particles to pass through, the electron shower is in the on state supplying electrons onto the sample 24, and the reactive gas is in the "on" state where the valve 17 is opened and the exhaust device (not shown) The inside of the nozzle 15 is now evacuated. In this way, the processing position.

After setting the processing area, microchannel plate 1
The voltage ■2 applied to 1 is set to O volts, and V is -
Set to v0 and close the shutter 13. However, if the voltage v0 applied to the pull-in electrode 12 is set to O volts, the potential distribution on the sample 24 will change and the landing point of the ion beam 2 on the sample 24 will change, resulting in the above-mentioned processing. The position and processing area settings are incorrect. Therefore, the voltage ■ applied to the lead-in electrode 12. is shutter 13
Keep it applied even after closing. Further, the shutter 13 is kept at ground potential. Thereby, the locus of the ion beam 2 is not changed in any way by closing the shutter 13, and high processing position accuracy can be maintained. Under the above conditions, a reactive gas is sprayed onto the sample 24 from the nozzle 15. At this time, the reactive gas varies depending on the material of the workpiece, but for example, if the workpiece is Al1, C1-based gas (C112, CCL) is used.

BCC105iCQ, etc.) is suitable, and 5in2 mainly uses F-based gases (CF4, CHF3, C3Fs, Xe
F, etc.) are suitable. Further, the shutter 13 is provided with a hole in the center that is large enough for the ion beam 2 to pass through. Electrons are supplied from the electron source 22 through the orifice of the electron gun 19 to neutralize the positive charges accumulated on the sample 24 by the ion beam 2, so that the trajectory of the ion beam 2 is not bent. This electron gun 19
is constantly evacuated, and the reactive gas that enters through the orifice is immediately evacuated to keep the reactive gas concentration around the electron source 22 low and prevent performance deterioration.

The sample 24 is subjected to reactive etching by the reactive gas activated by the ion beam 2.

After machining to a desired depth based on the machining speed determined in advance through experiments, the valve 16
Close the valve 17 and open it to exhaust the reactive gas. After a while, after the reactive gas near the secondary particle detector has been sufficiently exhausted, open the shutter 13 and apply voltage to the microchannel plate 11 and the detection electrode 10. Then, set the next machining position to 1! Detection and positioning for machining. From then on, this operation is repeated. These series of operations can be controlled and performed by the computer 33.

According to this embodiment, it is possible to prevent performance deterioration of the secondary particle detector and the electron source of the electron shower due to the reactive gas, and to enable stable operation of the device. The control process and operation of each part will be explained with reference to FIG.

In the above explanation of the control process, in order to set the position and processing area for each location, the SIM image was observed after exhausting the reactive gas. One day, I obtained a digital image by A/D converting the SIM image, enlarged the processing area by moving the cursor on the digital image, set the processing area using the enlarged image, and then stored it in the image memory. Register it. Processing areas are similarly set for other processing locations and registered in the image memory. Then, after turning off the voltage of the microchannel plate 11 and the detection electrode 10 and closing the shutter 13, the coordinates of the processing position read from the image memory 3 are input to the stage controller 3o to move the stage 25 and position the sample 24. The processing area is read from the image memory I, inputted to the ion beam controller 28, reactive gas is supplied from the nozzle 15 to perform the first processing, and the second and third processing. After turning off the ion beam 2 while keeping the reactive gas supplied, the stage 25 is moved to move the sample 24 to the processing position according to the processing position coordinate signals from the image memories ① and ②, respectively, and the ion beam 2 is turned off. Irradiate and process in the same way. By doing so, the total time required to exhaust the reactive gas is shortened, and processing efficiency is improved.

Example 2: A second embodiment of the present invention will be explained with reference to FIG.

FIG. 5 is a configuration diagram showing the main parts of the device.

In this embodiment, a cooling means is provided in the shutter 35 that blocks the reactive gas, and a means for spraying an inert gas onto the sample 24 is provided. That is, a cooling pipe 40 is passed through the column holding the shutter 35, and a refrigerant substance such as liquid nitrogen is supplied into the pipe, and the surface of the shutter 35 is cooled to below the evaporation humidity of the reactive gas using heat conduction. . The nozzle 36 also has a valve 37 as a means for spraying inert gas.
It is connected to an inert gas cylinder 38 via. By doing so, the reactive gas supplied from the nozzle 15 is adsorbed when it hits the shutter 35, and the amount of reactive gas going to the microchannel plate 11 can be further reduced. Further, when moving from processing to observation, the reactive gas remaining on the surface of the sample 24 is blown away by the inert gas from the nozzle 36, so that the reactive gas can be exhausted more reliably.

Note that the configuration and operation of this embodiment other than those described above are the same as those of the first embodiment.

Margin Example 3z As a third example of the present invention, an example in which a mesh electrode is used as a secondary particle detector will be described below with reference to FIG. FIG. 6 is a block diagram showing the main parts of the device.

In the figure, the mesh electrode 41 is shaped to cover the sample 24 in order to efficiently detect secondary ions, and is large enough to pass the electron gun 19, ion beam 2, and nozzle 15, respectively. It has a hole. A negative voltage for drawing in secondary ions is applied to this mesh electrode 41 by a drawing power source 42 . The current caused by the drawn secondary ions is converted into a voltage signal by an I/V converter 43, amplified by a high gain amplifier 44, and sent to a SIM card on a CRT through a processing device (not shown).
Detected as an image. In this case, the mesh electrode 41 may be made of a metal that is stable against reactive gases (for example, Au, Ni, etc.).
etc.), or by coating the surface of another metal with the above-mentioned stable metal, there is no performance deterioration due to reactive gas, and it is possible to stably obtain a SIM image.

In the case of this embodiment, in addition to the effects of the first embodiment, it is possible to observe the processing state during processing while flowing reactive gas, so that while observing the progress of processing, it is also possible to check the position shift, beam focus, etc. This has the effect that machining can be performed while correcting deviations, etc., and that machining position accuracy can be increased.

Embodiment 4: As a fourth embodiment of the present invention, an example in which a scintillator is used as a secondary particle detector will be explained with reference to FIG. FIG. 7 is a configuration diagram showing the main parts of the device.

In this embodiment, a protective film 46 (for example, Au-P
d, Ag, Pt, etc.), the performance will not deteriorate as in the third embodiment, and a SIM image can be obtained even during processing.

Example 5: A fifth embodiment of the present invention will be described with reference to FIG.

This embodiment includes an optical system that draws in secondary ions.

The structure is such that the drawn secondary ions are detected by a scintillator. FIG. 8 is a block diagram showing the main parts of the device.

The retraction optical system is composed of a first aperture 47, a front lens 48, a second aperture 49, a rear lens 50, and a third aperture 51, and a scintillator 52 is disposed after the third aperture 51. . These are housed in a detector chamber 53, and the detector chamber 53 is equipped with a multi-stage evacuation means for evacuation between the respective apertures.

In this configuration, secondary ions ejected from the sample 24 pass through the first aperture 47, are once focused by the front lens 48, pass through the second aperture 49, are focused again by the rear lens 50, and are then focused once by the front lens 48. The light passes through the aperture 51 and is irradiated onto the light receiving surface of the scintillator 52 . The secondary ions amplified by the scintillator 52 are then processed through a processing device (not shown) to obtain a SIM image. Here, a part of the reactive gas that has entered through the first aperture 47 is exhausted through the valve 54, and the reactive gas that has passed through the second aperture 49 without being exhausted is exhausted through the valve 55. Exhausted through. By narrowing the aperture and differentially pumping in this manner, the amount of one reactive gas reaching the light receiving surface of the scintillator 52 can be minimized, and observation can be performed without damaging the scintillator 52.

Example 6: A sixth embodiment of the present invention will be described with reference to FIG.

This embodiment, like the fifth embodiment, is provided with an optical system for drawing in secondary ions, but has a configuration in which ions are detected by a scintillator after passing through a bent cylinder.

FIG. 9 is a block diagram showing the main parts of the device.

In this configuration, secondary ions are drawn in by the first aperture 57 to which a negative voltage is applied, and are irradiated onto the light receiving surface of the scintillator 52 by the lens 58. Here, the lens 58
, a refrigerant substance such as liquid nitrogen is poured into the cooling vibro 0 wrapped around a tube 62 containing the scintillator 52, etc.,
Refrigerate @62. By doing so, the reactive gas that has flown into the cylinder 62 through the first aperture 57 collides with the inner wall of the cylinder 62 and is adsorbed on the inner wall. Thereby, observation can be performed without damaging the scintillator 52 due to the reactive gas.

Note that in the third to sixth embodiments, the configurations other than the secondary particle detector are the same as those in the first embodiment, and a description thereof will be omitted.

Embodiment 7: As a seventh embodiment of the present invention, an example provided with another means for supplying an electron shower will be described with reference to FIG. 10th
The figure is a configuration diagram showing the main parts of the device.

In this embodiment, the secondary particle detector is the same as in the fourth embodiment, and the other configurations are the same as in the first embodiment, so only the configuration and operation of the electron shower will be described here.

In the figure, there is a thermionic emission filament 65 placed in a vacuum atmosphere separate from the processing chamber, and a cathode body 64 is installed between the thermionic emission filament 65 and the processing chamber. Here, the cathode body 64 is made of a high melting point metal to emit electrons when heated, and is made of a metal (for example, 1V, Mo, Ta, etc.) that has some degree of durability against reactive gases. Here, the cathode body 64 is heated by thermionic electrons emitted from the thermionic emission filament 65. Accordingly, electrons fly out from the cathode body 64 and are focused by the lens 66.

By irradiating the sample 24 with the ion beam, the positive charge of the ion beam 2 on the sample 24 can be neutralized. In this electron shower, the cathode body 6 is directly exposed to the reactive gas.
4, and if this cathode body 64 is made thick,
Even if it is etched with a reactive gas, the cathode body 64 will not burn out immediately because it is a sunset scene, so it is possible to stably supply electrons.

In the explanation of the above embodiments, etching has been described as charged beam processing, but hydrocarbon gas (C, He
, C, H, 02, C, H, etc.) and metal carbonyl gas (
Secondary particle detectors and It goes without saying that the present invention is effective in protecting electronic showers.

Furthermore, in the above description, the description has been limited to ion beam irradiation and secondary ion detection.

Similar effects can be obtained in electron beam irradiation and secondary electron detection by partially reversing the positive/negative voltage applied to the secondary particle detector.

〔Effect of the invention〕

According to the present invention, when performing reactive etching or beam-assisted deposition using a charged beam by introducing a reactive gas, the secondary particle detector and electron shower can be protected from the reactive gas, resulting in a stable device. Operation becomes possible.

[Brief explanation of drawings]

FIG. 1 is a block diagram of the apparatus according to the first embodiment of the present invention, and FIG.
An explanatory diagram of the operation sequence of each element during machining, Fig. 3 is a schematic diagram showing detailed conditions during the above observation and machining, Fig. 4 is an explanatory diagram of another control process in the above device, and Figs. 10
The figures are configuration diagrams showing main parts of devices according to second to seventh embodiments of the present invention, respectively. Explanation of symbols 1...Ion source 2...Ion beam 9.
...Shield electrode 10...Detection electrode 11...
Microchannel plate 12...Retraction electrode
13...Shutter 14...Drive bag M
15... Nozzle 18... Reactive gas cylinder 19
...electron gun 20...gate valve 22...
Electron source 23... Lens 24... Sample 2
5...Stage 27...Main chamber 28...Ion beam controller 29...Electronic shower power supply 30...Stage controller 31...Gas supply/exhaust valve controller 32...
Secondary particle detector controller 33... Computer 35... Shutter 36... Nozzle 40... Cooling pipe 43... I/V converter 45... Scintillator 47, 49.51... Aperture 48 ... Front stage lens 52 ... Scintillator 60 ... Cooling vibro 4 ... Cathode body 65 ... Thermionic emission filament 50 ... Back stage lens 53 ... Detector chamber 62 ... Cylinder 38 ...・Inert gas cylinder 41...mesh electrode 44...amplifier 46...protective film

Claims (1)

[Claims] 1. A beam source that generates a charged beam such as an ion beam or an electron beam, a focusing optical system, a stage, a secondary particle detector, an electron shower, a reactive gas supply means, and a power supply controller that drives them. What is claimed is: 1. A charged beam processing device comprising: a device for preventing performance deterioration due to reactive gas in at least one of the secondary electron detector and the electron shower. 2. In the charged beam processing apparatus according to claim 1, the charged beam processing is a charged beam processing in which reactive gas is sprayed onto the workpiece and reactive etching is performed locally at the irradiated portion of the charged beam. Characteristic charged beam processing equipment. 3. The charged beam processing apparatus according to claim 1, wherein the charged beam processing is charged beam film formation using beam assisted deposition. 4. In the charged beam processing device according to any one of claims 1 to 3, as a means for preventing performance deterioration of the secondary particle detector, a , equipped with a shutter mechanism that allows the charged beam to pass through and is kept at ground potential; when supplying reactive gas, the secondary particle detector is turned off and the shutter is closed, and when performing observation, the reactive gas is exhausted before A charged beam processing device comprising means for switching the shutter to open and turn on the secondary particle detector. 5. In the charged beam processing apparatus according to claim 4, 2
A charged beam processing device characterized in that a voltage for shielding an electron shower is applied to a lead-in electrode of a secondary particle detector even when the secondary particle detector is turned off and a shutter is closed. 6. In the charged beam processing apparatus according to claim 4 or 5, the machining position and the machining area are set in advance based on the information obtained from the secondary particle detector, and the data is stored in the memory, and the secondary particle detector A charged beam processing apparatus comprising: a control system that performs charged beam processing based on processing position and processing area data stored in the memory after turning off the shutter and closing the shutter. 7. In the charged beam processing apparatus according to any one of claims 1 to 3, as a means for preventing performance deterioration of the secondary particle detector, a secondary particle detector having a protective film resistant to reactive gases deposited thereon. A charged beam processing device characterized by using a particle detector. 8. In the charged beam processing apparatus according to any one of claims 1 to 3, as a means for preventing performance deterioration of the secondary particle detector, two
A charged beam processing device characterized by installing a secondary particle detector. 9. In the charged beam processing apparatus according to any one of claims 1 to 3, the secondary particle detector is installed in a housing provided with a cooling mechanism as a means for preventing performance deterioration of the secondary particle detector. Characteristic charged beam processing equipment. 10. The charged beam processing apparatus according to any one of claims 1 to 3, characterized in that the electron shower is equipped with a differential pumping mechanism in the electron source portion of the electron shower as a means for preventing performance deterioration of the electron shower. Charged beam processing equipment. 11. The charged beam processing apparatus according to any one of claims 1 to 3, characterized in that an electron shower having a cathode body heating type electron generation mechanism is used as a means for preventing performance deterioration of the electron shower. Charged beam processing equipment. 12. Spraying reactive gas onto the workpiece,
By irradiating charged beams such as ion beams and electron beams,
In a charged beam processing method that performs local reactive etching or beam-assisted deposition at the charged beam irradiation area, when supplying reactive gas, the secondary particle detector is turned off, the shutter is closed, and the reactive gas is exhausted. A charged beam processing method characterized by opening a shutter and turning on a secondary particle detector when performing observation. 13. The charged beam processing method according to claim 12, wherein when the secondary particle detector is turned off and the shutter is closed, a voltage is applied to the lead-in electrode to shield the electron shower. Method. 14. Spraying reactive gas onto the workpiece,
By irradiating charged beams such as ion beams and electron beams,
In a charged beam processing method that performs local reactive etching or beam-assisted deposition at the charged beam irradiation area, data on the processing position and processing area is stored in memory in advance from the SIM image obtained from the secondary particle detector. A charged beam processing method characterized in that a secondary particle detector is turned off, a shutter is closed, and local reactive etching or beam assisted deposition is performed based on processing position and processing area data stored in a memory.