JPH03242397A - Method for pulling up silicon single crystal - Google Patents
Method for pulling up silicon single crystalInfo
- Publication number
- JPH03242397A JPH03242397A JP3554590A JP3554590A JPH03242397A JP H03242397 A JPH03242397 A JP H03242397A JP 3554590 A JP3554590 A JP 3554590A JP 3554590 A JP3554590 A JP 3554590A JP H03242397 A JPH03242397 A JP H03242397A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- crucible
- silicon
- pipe
- glass pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- 239000013078 crystal Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910002804 graphite Inorganic materials 0.000 abstract description 6
- 239000010439 graphite Substances 0.000 abstract description 6
- 230000004927 fusion Effects 0.000 abstract 2
- 238000004090 dissolution Methods 0.000 abstract 1
- 238000003466 welding Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、シリコン単結晶引上げ方法に係り、特に二重
構造石英ガラスルツボな用いたシリコン単結晶引上げ方
法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for pulling a silicon single crystal, and particularly to a method for pulling a silicon single crystal using a double-structured quartz glass crucible.
近年、ＣＺ（チョクラルスキー）法によるシリコン単結
晶の育成において、連続チャージ引上げを行う場合のシ
リコン融液の飛散防止あるいは結晶引上げ部とチャージ
部に温度差を与える機能を持たせる他、シリコン単結晶
における引上げ軸方向の結晶電気低効率の均一化を図る
ため、二重構造石英ガラスルツボが用いられるようにな
ってきている。In recent years, in growing silicon single crystals using the CZ (Czochralski) method, in addition to providing functions to prevent silicon melt from scattering during continuous charge pulling or to provide a temperature difference between the crystal pulling part and the charging part, In order to equalize the crystal electricity efficiency in the direction of the pulling axis in the crystal, double-structured silica glass crucibles have come to be used.
この二重構造石英ガラスルツボは、例えば第２図に示す
ように、石英ガラスルツボ１１内にこれより小径の石英
ガラスパイプ１２を同心状に載置し、かつその下端部を
石英ガラスルツボ１１の底部と液密に接合して、石英ガ
ラスルツボ１１内にこれと石英ガラスパイプ１２とに囲
まれた外室１３と、石英ガラスパイプ１２に囲まれた内
室１４との２室を形成し、外室１３と内室１４とを石英
ガラスパイプ１２の下端部に設けた複数の貫通孔１５に
より連通した構造を有している。For example, as shown in FIG. 2, this double structure quartz glass crucible has a quartz glass pipe 12 with a smaller diameter placed concentrically inside the quartz glass crucible 11, and the lower end of the quartz glass pipe 12 is placed inside the quartz glass crucible 11. The quartz glass crucible 11 is liquid-tightly joined to the bottom to form two chambers, an outer chamber 13 surrounded by the quartz glass crucible and the quartz glass pipe 12, and an inner chamber 14 surrounded by the quartz glass pipe 12; It has a structure in which the outer chamber 13 and the inner chamber 14 are communicated with each other through a plurality of through holes 15 provided at the lower end of the quartz glass pipe 12.
通常、この種の二重構造石英ガラスルツボは、石英ガラ
スルツボ内に同心状に載置した石英ガラスパイプを高純
度材料（例えば石英ガラス粉末）を用いて溶接して製造
されている。Usually, this type of double-structured quartz glass crucible is manufactured by welding quartz glass pipes placed concentrically within the quartz glass crucible using a high-purity material (for example, quartz glass powder).
［発明が解決しようとする課題〕
しかしながら、上記従来の二重構造石英ガラスルツボを
用いたシリコン単結晶引上げ方法においては、ルツボの
溶接作業時の不純物の混入によりシリコン単結晶が汚染
されたり、製造コストが上昇する問題がある。[Problems to be Solved by the Invention] However, in the above conventional silicon single crystal pulling method using a double-structured silica glass crucible, the silicon single crystal may be contaminated due to impurities mixed in during welding of the crucible, and manufacturing There is a problem of rising costs.
そこで、本発明は、汚染を受けず、かつ製造コストを低
減し得る二重構造石英ガラスルツボを用いたシリコン単
結晶引上げ方法の提供を目的とする。Therefore, an object of the present invention is to provide a method for pulling a silicon single crystal using a double-structured quartz glass crucible that is free from contamination and can reduce manufacturing costs.
［課題を解決するための手段］
前記課題を解決するため、本発明のシリコン単結晶引上
げ方法は、石英ガラスルツボより小径の石英ガラスパイ
プを該ルツボ内に同心状に載置したルツボ装置にシリコ
ン多結晶を装填し、シリコン多結晶の渚解時に石英ガラ
スルツボと石英ガラスパイプの接触部を１５００℃以上
の温度で加熱する方法である。[Means for Solving the Problems] In order to solve the above-mentioned problems, the silicon single crystal pulling method of the present invention includes a crucible apparatus in which a quartz glass pipe having a diameter smaller than that of a quartz glass crucible is placed concentrically in the crucible. This is a method in which polycrystals are loaded and the contact area between the quartz glass crucible and the quartz glass pipe is heated to a temperature of 1500° C. or higher during the crystallization of the silicon polycrystals.
［作 用］
上記手段においては、シリコン多結晶の溶解と並行して
石英ガラスルツボと石英ガラスパイプとの液密な溶着が
行われる。[Function] In the above means, liquid-tight welding of the quartz glass crucible and the quartz glass pipe is performed in parallel with the melting of the silicon polycrystal.
［実施例］ 以下、本発明の一実施例を第１図と共に説明する。[Example] An embodiment of the present invention will be described below with reference to FIG.
黒鉛ルツボ１内に装着された直径１６インチ、高さ１２
インチの石英ガラスルツボ２内に、直径１０インチ、高
さ１０インチの石英ガラスパイプ３を同心状に載置する
と共に、石英ガラスルツボ２と石英ガラスパイプ３とに
囲まれた領域及び石英ガラスパイプ３に囲まれた領域に
シリコン多結晶４を合計で３０ｋｇ装填した。Diameter 16 inches, height 12 installed in graphite crucible 1
A quartz glass pipe 3 with a diameter of 10 inches and a height of 10 inches is placed concentrically in a quartz glass crucible 2 with a diameter of 10 inches. A total of 30 kg of silicon polycrystal 4 was loaded in the area surrounded by 3.
ついで、ヒーター（図示せず）を介して石英ガラスルツ
ボ２と石英ガラスパイプ３との接触部が１５００℃以上
の温度となるように、黒鉛ルツボ１の外側から加熱し、
この状態を３時間保持したところ、シリコン多結晶４の
溶解と並行して石英ガラスルツボ２と石英ガラスパイプ
３との溶着が行われ、石英ガラスルツボ２と石英ガラス
パイプ３とに囲まれた外室５と、石英ガラスパイプ３に
囲まれた内室６との２室を有する二重構造石英ガラスル
ツボとなった。Next, the graphite crucible 1 is heated from the outside using a heater (not shown) so that the contact area between the silica glass crucible 2 and the quartz glass pipe 3 reaches a temperature of 1500° C. or more.
When this state was maintained for 3 hours, the quartz glass crucible 2 and the quartz glass pipe 3 were welded together in parallel with the melting of the silicon polycrystal 4, and the outside surrounded by the quartz glass crucible 2 and the quartz glass pipe 3 was formed. The resulting double-structured quartz glass crucible has two chambers: a chamber 5 and an inner chamber 6 surrounded by a quartz glass pipe 3.
図中７は石英ガラスパイプ３の下端部に設けた複数の連
通孔で、シリコン融液の外室５から内室６への所要量の
流入を可能とするものである。In the figure, reference numeral 7 denotes a plurality of communication holes provided at the lower end of the quartz glass pipe 3, which allow a required amount of silicon melt to flow from the outer chamber 5 to the inner chamber 6.
なお、石英ガラスルツボ２と石英ガラスパイプ３との接
触部の温度は、黒鉛ルツボ１と石英ガラスルツボ２との
間に介装したＷ−ＷＩｌｅ熱電対８を用いて測定した。The temperature at the contact portion between the quartz glass crucible 2 and the quartz glass pipe 3 was measured using a W-WIle thermocouple 8 interposed between the graphite crucible 1 and the quartz glass crucible 2.
又、石英ガラスルツボ２と石英ガラスパイプ３との溶着
状態をみるため、図示は省略するが、直径１６インチの
石英ガラスルツボ内に、第１図に示す場合と同様に、直
径１０インチ、高さ１０インチの石英ガラスパイプ（連
通孔となる孔を設けていない）を同心状に載置し、シリ
コン多結晶を装填することなく、ヒーターにより石英ガ
ラスルツボと石英ガラスパイプの接触部が１５００℃以
上の温度となるように３時間加熱した後、内室に純水に
満して外室への漏水をチエツクしたところ、７２時間以
上経過しても漏水は確認されず、石英ガラスルツボと石
英ガラスパイプとの溶着は、液密に行われていることが
わかった。In addition, in order to see the welding state between the quartz glass crucible 2 and the quartz glass pipe 3, although not shown, a quartz glass crucible with a diameter of 10 inches and a height of A 10-inch quartz glass pipe (without a hole for communication) was placed concentrically, and the contact area between the quartz glass crucible and the quartz glass pipe was heated to 1500°C using a heater without loading silicon polycrystal. After heating to the above temperature for 3 hours, we filled the inner chamber with pure water and checked for water leakage to the outer chamber. No water leakage was confirmed even after 72 hours had passed. It was found that the welding with the glass pipe was done in a liquid-tight manner.
更に、上述した石英ガラスルツボと石英ガラスパイプと
の溶着に際し、３０ｋｇのシリコン多結晶を装填して同
様の条件で溶着した後、内室内からのシリコン単結晶の
育成を行ったところ、外室内のシリコン融液面の下降を
みることなく育成が行われ、溶着が液密であることが確
認された。Furthermore, when welding the quartz glass crucible and the quartz glass pipe described above, 30 kg of polycrystalline silicon was loaded and welded under the same conditions, and then silicon single crystals were grown from the inner chamber. It was confirmed that the growth was carried out without any drop in the silicon melt level, and that the welding was liquid-tight.
［発明の効果］
以上のように本発明によれば、シリコン多結晶の溶解と
並行して石英ガラスルツボと石英ガラスパイプとの液密
な溶着が行われるので、従来のようにルツボの溶接作業
時の汚染によりシリコン単結晶が汚染されるようなこと
がないと共に、製造コストを大幅に低減することができ
る。[Effects of the Invention] As described above, according to the present invention, the liquid-tight welding of the quartz glass crucible and the quartz glass pipe is performed in parallel with the melting of the silicon polycrystal, so that the crucible welding work is no longer necessary as in the conventional method. The silicon single crystal is not contaminated by contamination caused by time pollution, and manufacturing costs can be significantly reduced.
第１図は本発明の二重構造石英ガラスルツボを用いたシ
リコン単結晶引上げ方法の一工程を示す断面図、第２図
は通常の二重構造石英ガラスルツボの断面図である。
１・・・黒鉛ルツボ ２・・・石英ガラスルツ
ボ３・・・石英ガラスパイプ
４・・・シリコン多結晶
・・・外室
６・・・内室
７・・・連通孔FIG. 1 is a cross-sectional view showing one step of the silicon single crystal pulling method using the double-structured quartz glass crucible of the present invention, and FIG. 2 is a cross-sectional view of a normal double-structured quartz glass crucible. 1... Graphite crucible 2... Quartz glass crucible 3... Quartz glass pipe 4... Silicon polycrystalline... Outer chamber 6... Inner chamber 7... Communication hole
Claims (1)
該ルツボ内に同心状に載置したルツボ装置にシリコン多
結晶を装填し、シリコン多結晶の溶解時に石英ガラスル
ツボと石英ガラスパイプの接触部を１５００℃以上の温
度で加熱することを特徴とするシリコン単結晶引上げ方
法。(1) Silicon polycrystals are loaded into a crucible device in which a quartz glass pipe with a smaller diameter than the quartz glass crucible is placed concentrically within the crucible, and when melting the silicon polycrystals, the contact area between the quartz glass crucible and the quartz glass pipe is A silicon single crystal pulling method characterized by heating at a temperature of 1500°C or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3554590A JPH03242397A (en) | 1990-02-16 | 1990-02-16 | Method for pulling up silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3554590A JPH03242397A (en) | 1990-02-16 | 1990-02-16 | Method for pulling up silicon single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03242397A true JPH03242397A (en) | 1991-10-29 |
Family
ID=12444701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3554590A Pending JPH03242397A (en) | 1990-02-16 | 1990-02-16 | Method for pulling up silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03242397A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04236153A (en) * | 1991-01-11 | 1992-08-25 | Nippon Densan Corp | Spindle motor |
| US5510222A (en) * | 1993-05-20 | 1996-04-23 | Canon Kabushiki Kaisha | Toner for developing electrostatic image and process for production thereof |
| US5747213A (en) * | 1995-05-31 | 1998-05-05 | Canon Kabushiki Kaisha | Image forming method and heat fixing method using a toner including a wax |
-
1990
- 1990-02-16 JP JP3554590A patent/JPH03242397A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04236153A (en) * | 1991-01-11 | 1992-08-25 | Nippon Densan Corp | Spindle motor |
| US5510222A (en) * | 1993-05-20 | 1996-04-23 | Canon Kabushiki Kaisha | Toner for developing electrostatic image and process for production thereof |
| US5747213A (en) * | 1995-05-31 | 1998-05-05 | Canon Kabushiki Kaisha | Image forming method and heat fixing method using a toner including a wax |
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