JPH03241734A - Vapor growth device - Google Patents
Vapor growth deviceInfo
- Publication number
- JPH03241734A JPH03241734A JP3726890A JP3726890A JPH03241734A JP H03241734 A JPH03241734 A JP H03241734A JP 3726890 A JP3726890 A JP 3726890A JP 3726890 A JP3726890 A JP 3726890A JP H03241734 A JPH03241734 A JP H03241734A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- growth
- susceptor
- accelerating
- jets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 abstract 10
- -1 for example Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Abstract
PURPOSE: To secure the uniformity of the film thickness of a crystal and the reproducibility in every growth by providing it with an opening which jets accelerating gas along the side of a susceptor from the upper stream side of the susceptor.
CONSTITUTION: In addition to the growth gas introduction port 3 provided right above a susceptor 2, an accelerating gas jetting nozzle 5 is provided, which jets accelerating gas, for example, hydrogen along the side of the susceptor from near the wall of a device 1. It is desirable that this sectional area should be equal to that of a growth gas introduction port 3 or smaller than this, and also it is desirable that the flow rate of the accelerating gas should be higher than that of the growth gas. Accordingly, eddy can be prevented from occurring in the flow of growth gas. Hereby, for the gas contributable to the growth on the substrate, the composition of material gas is maintained approximately intact, and the uniformity and the reproducibility of the composition of crystals can be attained.
COPYRIGHT: (C)1991,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3726890A JPH03241734A (en) | 1990-02-20 | 1990-02-20 | Vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3726890A JPH03241734A (en) | 1990-02-20 | 1990-02-20 | Vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03241734A true JPH03241734A (en) | 1991-10-28 |
Family
ID=12492926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3726890A Pending JPH03241734A (en) | 1990-02-20 | 1990-02-20 | Vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03241734A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019057740A (en) * | 2019-01-07 | 2019-04-11 | 東芝デバイス＆ストレージ株式会社 | Semiconductor device manufacturing method |
-
1990
- 1990-02-20 JP JP3726890A patent/JPH03241734A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019057740A (en) * | 2019-01-07 | 2019-04-11 | 東芝デバイス＆ストレージ株式会社 | Semiconductor device manufacturing method |
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