JPH03240947A - Plasma treating device - Google Patents

Plasma treating device

Info

Publication number
JPH03240947A
JPH03240947A JP3608290A JP3608290A JPH03240947A JP H03240947 A JPH03240947 A JP H03240947A JP 3608290 A JP3608290 A JP 3608290A JP 3608290 A JP3608290 A JP 3608290A JP H03240947 A JPH03240947 A JP H03240947A
Authority
JP
Japan
Prior art keywords
sample
charge up
characteristic
processing
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3608290A
Inventor
Kiyoyuki Masuda
Masaharu Saikai
Original Assignee
Hitachi Kasado Eng Kk
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kasado Eng Kk, Hitachi Ltd filed Critical Hitachi Kasado Eng Kk
Priority to JP3608290A priority Critical patent/JPH03240947A/en
Publication of JPH03240947A publication Critical patent/JPH03240947A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To prevent the deterioration in processing characteristic by a charge up and to execute processing with high accuracy and good productivity by supplying the charged particles of the characteristic reverse from the characteristic of the charge up charges generated in a sample at the time of processing the sample having no electrical conductivity with the plasma treating device.
CONSTITUTION: The inside of a vacuum chamber 1 of the parallel plate type plasma treating device consisting of the vacuum chamber 1, a sample electrode 2 and a counter electrode 3 is evacuated to a vacuum by a discharge device 4 and a discharge, gas is supplied under a specified low pressure from a gas cylinder 5 into the chamber. Plasma is formed between the two electrodes 2 and 3 by a high-frequency power source 7 to process the sample 8 on the electrode 2 by the plasma. The charge up is generated on the surface of the sample 6 by the charged particles supplied in the case of the sample consisting of an insulator and the precision processing is hindered. The device to supply the charged particles of the characteristic reverse from the characteristic of the charge up is provided on the side wall of the vacuum chamber 1 in order to prevent this charge up. The microwave discharge is generated by this device to draw out the charged particles reverse from the charge up. These particles are supplied to the sample 8 to neutralize the charge up of the sample 8, by which the precise plasma processing is stably executed.
COPYRIGHT: (C)1991,JPO&Japio
JP3608290A 1990-02-19 1990-02-19 Plasma treating device Pending JPH03240947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3608290A JPH03240947A (en) 1990-02-19 1990-02-19 Plasma treating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3608290A JPH03240947A (en) 1990-02-19 1990-02-19 Plasma treating device

Publications (1)

Publication Number Publication Date
JPH03240947A true JPH03240947A (en) 1991-10-28

Family

ID=12459824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3608290A Pending JPH03240947A (en) 1990-02-19 1990-02-19 Plasma treating device

Country Status (1)

Country Link
JP (1) JPH03240947A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5527396A (en) * 1992-06-30 1996-06-18 Canon Kabushiki Kaisha Deposited film forming apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5527396A (en) * 1992-06-30 1996-06-18 Canon Kabushiki Kaisha Deposited film forming apparatus

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