JPH03235223A - Semiconductor laser defect detector - Google Patents

Semiconductor laser defect detector

Info

Publication number
JPH03235223A
JPH03235223A JP2031875A JP3187590A JPH03235223A JP H03235223 A JPH03235223 A JP H03235223A JP 2031875 A JP2031875 A JP 2031875A JP 3187590 A JP3187590 A JP 3187590A JP H03235223 A JPH03235223 A JP H03235223A
Authority
JP
Japan
Prior art keywords
laser
semiconductor laser
recording
control circuit
detection signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2031875A
Other languages
Japanese (ja)
Other versions
JP2834254B2 (en
Inventor
Wataru Masuda
渉 増田
Hironori Masuda
増田 博則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2031875A priority Critical patent/JP2834254B2/en
Publication of JPH03235223A publication Critical patent/JPH03235223A/en
Application granted granted Critical
Publication of JP2834254B2 publication Critical patent/JP2834254B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Optical Recording Or Reproduction (AREA)
  • Optical Head (AREA)

Abstract

PURPOSE:To detect the defect of a semiconductor laser and to prevent information tracks or information on a recording carrier from being damaged by switching laser power to recording power before executing focus control, and operating a laser defect discriminating means according to the detection signal of a light quantity detector. CONSTITUTION:A laser defect discriminating means 7 is composed of a microcomputer equipped with a central arithmetic unit, etc., and after confirming the raising of rotation speed for a disk 5, a laser power control circuit 1 is switched to the recording power control according to the detection signal from a rotation detector 4 before executing the focus control. When it is detected by the detection signal of a light quantity detector 3 that the semiconductor laser can not output the quantity of light necessary for recording, a focus control circuit 8 is not driven but the semiconductor laser is stopped being driven. At such a time, since focus is not loaded even when outputting the recording power from the semiconductor laser, power concentration on a disk 5 is small and nothing is recorded onto the information tracks.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体レーザを用いて記録担体に情報を記録
する記録装置の半導体レーザ不良検出装置に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor laser defect detection device for a recording device that records information on a record carrier using a semiconductor laser.

従来の技術 光学的に情報を記録する円盤状記録担体(以降ディスク
と称す)などの記録光源に使われている半導体レーザは
、経年変化や静電気などのショックで劣化し、劣化の進
行速度も素子によりバラツキがあり、再生に必要な出射
光量(再生パワー)は出力できるが、再生パワーの5倍
から10倍の出力を必要とする記録時に、記録に必要な
出射光量(記録パワー)が出力できないという不良が発
生することがある。
Conventional technology Semiconductor lasers used in recording light sources such as disk-shaped record carriers (hereinafter referred to as disks) that optically record information deteriorate over time and due to shocks such as static electricity, and the rate of deterioration is faster than the rate at which the elements deteriorate. Although it is possible to output the amount of output light (reproduction power) necessary for reproduction, the amount of output light (recording power) required for recording cannot be output during recording, which requires an output 5 to 10 times the reproduction power. This defect may occur.

このなめ、従来の半導体レーザ不良検出装置は、記録時
に半導体レーザの後方出射口からの出射光量を測定し、
半導体レーザの駆動電流に対する出射光量の不足を検出
することにより半導体レーザの不良を検出し、記録不良
の防止を行っている。
Because of this, conventional semiconductor laser defect detection devices measure the amount of light emitted from the rear exit of the semiconductor laser during recording.
By detecting a shortage in the amount of emitted light relative to the drive current of the semiconductor laser, defects in the semiconductor laser are detected and recording defects are prevented.

発明が解決しようとする課題 しかし、上記従来の半導体レーザ不良検出装置では、記
録時に半導体レーザの不良を検出しており、出射光量不
足などの不良が記録担体に情報を書き込んだ後で判明す
るので、記録タイミングを逃すことによる情報のロスだ
けではなく、追記形ディスクのように一度しか記録でき
ない記録担体を用いた装置では、再生できない(C/N
などの信号品質の悪い)信号を記録してしまい、記録担
体にに不良情報トラックを出し、ユーザに損害を与える
という開題があった。
Problems to be Solved by the Invention However, in the conventional semiconductor laser defect detection device described above, defects in the semiconductor laser are detected during recording, and defects such as an insufficient amount of emitted light are discovered after information is written to the record carrier. In addition to information loss due to missed recording timing, playback is not possible with devices that use record carriers that can only record once, such as write-once discs (C/N
This has led to the problem of recording signals with poor signal quality (e.g., signals with poor signal quality), producing defective information tracks on the record carrier and causing damage to the user.

本発明は、上記従来の17?ff題を解決するもので記
録担体−Lの情報トラックや情報の損失を防止する−と
のできる半導体レーザ不良検出装置を提供することを目
的とするものである。
The present invention differs from the above-mentioned conventional 17? It is an object of the present invention to provide a semiconductor laser defect detection device which can solve the ff problem and prevent loss of information tracks and information on a record carrier L.

課題を解決するための手段 上記課題を解決するために本発明の半導体レーザ不良検
出装置は、半導体レーザの出力を制御するレーザパワー
制御回路と、レーザ出射光量が規定値以下であるかどう
かを検出する光量検出器と、前記レーザパワー制御回路
を記録パワー制御に切り換え、前記光量検出器の検出信
号によりフォーカス制御回路を駆動させるか否かを選択
するレーザ不良判別手段とを備えたものである。
Means for Solving the Problems In order to solve the above problems, the semiconductor laser defect detection device of the present invention includes a laser power control circuit that controls the output of the semiconductor laser, and detects whether the amount of laser emitted light is below a specified value. and a laser defect determining means that switches the laser power control circuit to recording power control and selects whether or not to drive the focus control circuit based on the detection signal of the light amount detector.

さらに、本発明の半導体レーザ不良検出装置は、上記構
成に加えて、記録担体が円盤状の場合に、円盤状記録担
体の回転速度が規定値以上であるかどうかを検出する回
転検出器を備え、レーザ不良判別手段は、前記回転検出
器からの検出信号により前記円盤状記録担体の回転速度
の立ち上がりを確認後、レーザパワー制御回路を記録パ
ワー制御に切り換え、光量検出器の検出信号によりフォ
ーカス制御回路を駆動させるか否かを選択する構成とし
たものである。
Furthermore, in addition to the above configuration, the semiconductor laser defect detection device of the present invention includes a rotation detector that detects whether the rotational speed of the disc-shaped record carrier is equal to or higher than a specified value when the record carrier is disc-shaped. After confirming the rise of the rotation speed of the disc-shaped record carrier using the detection signal from the rotation detector, the laser defect determination means switches the laser power control circuit to recording power control, and performs focus control using the detection signal from the light amount detector. The configuration is such that it is possible to select whether or not to drive the circuit.

作用 上記構成により、フォーカス制御を行う前に、レーザパ
ワーを記録パワーに切り換え、半導体レーザが記録に必
要な光量を出力できないことを光量検出器により検出す
ると、このとき、半導体レーザから記録パワーの出力が
出されてもフォーカスがかかっていないので、記録担体
上のパワー密度は小さく、これにより情報トラックを記
録することはない。したがって、情報トラックや情報を
損失することなく半導体レーザの不良か検出される。
Effect With the above configuration, before performing focus control, when the laser power is switched to recording power and the light intensity detector detects that the semiconductor laser cannot output the amount of light necessary for recording, at this time, the semiconductor laser outputs the recording power. Since it is not in focus even though it is emitted, the power density on the record carrier is small and thus no information track is recorded. Therefore, a defective semiconductor laser can be detected without losing information tracks or information.

さらに、回転検出器により円盤状記録担体の回転速度が
規定値以上であることを検出したのちに、レーザ不良判
別手段を動作させるので、円盤状記録担体に照射される
レーザ光のパワー密度が可能なかぎり小さくなり、情報
トラックや情報を損失することはいっそうなくなる。
Furthermore, after the rotation detector detects that the rotation speed of the disc-shaped record carrier is equal to or higher than a specified value, the laser defect determination means is activated, so that the power density of the laser beam irradiated onto the disc-shaped record carrier can be adjusted. It is much smaller and there is less loss of information tracks and information.

実施例 以下、本発明の一実施例について図面を参照しながら説
明する。
EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例を示す半導体レーザ不良検出
装置のプロ・yり図である。
FIG. 1 is a professional diagram of a semiconductor laser defect detection device showing an embodiment of the present invention.

第1図において、レーザパワー制御回路1は、光字ヘッ
ド2における半導体レーザの後方出射口を利用したフィ
ードバック制御を用い、記fi/再生におけるレーザ光
量を一定にするようにレーザ駆動電流を制御する。光1
検出器3は光字ヘッド2における半導体レーザの後方出
射口からの出射光量を電圧に変換し基1!電圧と比較す
ることで半導体レーザの出射光量の低下を検出する。回
転検出器4はディスク5を駆動するディスクモータ6の
FG信号を周波数−電圧変換し基準電圧と比較すること
でディスクの回転速度が規定値以上になったかどうかを
検出する。レーザ不良判別手段7は中央演算装置、プロ
グラムを格納している読みだし専用メモリ、書き込み/
読みだしができるメモリ、入出力ボートなどを備えたマ
イクロコンピュータで構成され、回転検出器4からの検
出信号によりディスク5の回転速度の立ち上がりを確認
した後、レーザパワー制御回路1を記録パワー制御に切
り換え、光量検出器3の検出信号により、光学ヘッド2
のフォーカス制御をするフォーカス制御回路8を駆動さ
せるか否かを選択する。
In FIG. 1, a laser power control circuit 1 uses feedback control using the rear exit of the semiconductor laser in the optical head 2 to control the laser drive current so as to keep the amount of laser light constant during recording/reproduction. . light 1
The detector 3 converts the amount of light emitted from the rear exit of the semiconductor laser in the optical head 2 into a voltage. A decrease in the amount of light emitted from the semiconductor laser is detected by comparing it with the voltage. The rotation detector 4 performs frequency-voltage conversion on the FG signal of the disk motor 6 that drives the disk 5 and compares it with a reference voltage to detect whether the rotation speed of the disk has exceeded a specified value. The laser defect determination means 7 includes a central processing unit, a read-only memory storing a program, and a write/write memory.
It consists of a microcomputer equipped with a readable memory, an input/output board, etc., and after confirming the rise of the rotational speed of the disk 5 based on the detection signal from the rotation detector 4, the laser power control circuit 1 is set to control the recording power. The optical head 2 is switched by the detection signal of the light amount detector 3.
It is selected whether or not to drive the focus control circuit 8 that performs focus control.

レーザ不良判別手段7は第2図に示すプログラムで実行
される。
The laser defect determining means 7 is executed by a program shown in FIG.

すなわち、光ディスク5が起動を開始し、ディスクモー
タ6が回転を開始すると、レーザ不良判別手段7のプロ
グラムが実行される。第2図において、まず、ステップ
10でマイクロコンビュータカ入力ポートから回転検出
器4の出力をモニターし、ディスクモータ6の回転速度
が一定値以上になるのを待つ。回転速度が上がると、ス
テップ20に進みレーザパワー制御回路1に出力ポート
から指示を送り、記録パワー出力制御に切り換え半導体
レーザから適正な記録光量を出射させるように制促させ
る。このとき、半導体レーザが劣化していると出射光量
は少なく、そのためレーザパワー制御回路1は出射光量
を増やすために駆動出力を上げ、半導体レーザの駆動電
流を増大させる。ステップ30で光量検出器3の出力を
入力ポートを介してモニターし、出射光量が規定値以下
の場合は半導体レーザの不良と判断してステップ40を
、また、出射光lが規定値より大きい場合は半導体レー
ザは正常と判断してステップ60を実行する。
That is, when the optical disk 5 starts to start up and the disk motor 6 starts rotating, the program of the laser defect determining means 7 is executed. In FIG. 2, first, in step 10, the output of the rotation detector 4 is monitored from the microcomputer input port, and it is waited for the rotation speed of the disk motor 6 to exceed a certain value. When the rotational speed increases, the process proceeds to step 20, where an instruction is sent to the laser power control circuit 1 from the output port to switch to recording power output control and urge the semiconductor laser to emit an appropriate amount of recording light. At this time, if the semiconductor laser is deteriorated, the amount of emitted light is small, so the laser power control circuit 1 increases the driving output and the driving current of the semiconductor laser in order to increase the amount of emitted light. In step 30, the output of the light intensity detector 3 is monitored through the input port, and if the output light amount is less than the specified value, it is determined that the semiconductor laser is defective, and step 40 is executed; If the semiconductor laser is determined to be normal, step 60 is executed.

ステップ40でレーザパワー制御回路1に出力ポートよ
り指令を送り半導体レーザの駆動を停止させる。その後
ステップ50で半導体レーザの不良があったことを示す
フラッグをセットしレーザ不良判別手段7の動作を終了
する。半導体レーザ不良フラッグが七y!−されている
ときは、後の異常処理プログラムで異常表示などの異常
対応処理が実行される。
In step 40, a command is sent to the laser power control circuit 1 from the output port to stop driving the semiconductor laser. Thereafter, in step 50, a flag indicating that there is a defect in the semiconductor laser is set, and the operation of the laser defect determining means 7 is terminated. Semiconductor laser defect flag is 7y! -, abnormality response processing such as abnormality display is executed in a later abnormality processing program.

一方、半導体レーザが正常であると判断するとステップ
60で、レーザパワー制御回路1に出力ポートより指令
を送り半導体レーザの駆動出力を再生出力制譚に切り換
え、さらに、ステ・yスフ0で半導体レーザの不良があ
ったことを示すフラッグをリセットし続いて、ステップ
80でフォーカス制御回路8を駆動させ、レーザ不良判
別手段7の動作を終了し、トラッキング制御などを行い
光ディスク記9kg置を立ち上げ、記録/再生を行う。
On the other hand, if it is determined that the semiconductor laser is normal, in step 60, a command is sent to the laser power control circuit 1 from the output port to switch the drive output of the semiconductor laser to reproduction output control. After resetting the flag indicating that there is a defect, the focus control circuit 8 is driven in step 80, the operation of the laser defect determining means 7 is terminated, and tracking control is performed to start up the optical disk recording at 9 kg. Perform recording/playback.

なお、本実施例では−ディスクに照射されるレーザ光の
パワー密度を可能なかぎり小さくするためディスク5の
回転立ち上がり後、半導体レーザの検査を行っているが
、ディスクのローディング時やディスクがローディング
されていない記録装置のパワーオン時に検査を行うこと
も可能である。
In this embodiment, the semiconductor laser is inspected after the disk 5 starts to rotate in order to minimize the power density of the laser beam irradiated onto the disk, but the inspection is performed when the disk is loaded or when the disk is not loaded. It is also possible to perform the test when the power is turned on for a recording device that is not installed.

また、記録担体として、カード状記録担体やテープ状記
録担体を用いた記録装置にも利用できるものである。
Furthermore, it can also be used in a recording device that uses a card-like record carrier or a tape-like record carrier as a record carrier.

発明の効果 以上のように本発明によれば、半導体レーザの不良をフ
ォーカスをかける前、すなわち光ディスクなどの記録担
体のローディング時や、記録装置の起動時に、実際の情
報を記録する前に検査するので、正しく再生できない信
号の記録による情報トラックの損失や記録タイミングを
逃すことによる情報の損失を未然に防ぐことができ、安
全性の高い半導体レーザを用いた記録装置を提供するこ
とができる。
Effects of the Invention As described above, according to the present invention, semiconductor laser defects can be inspected before focusing, that is, before actual information is recorded, when loading a record carrier such as an optical disk or when starting up a recording device. Therefore, it is possible to prevent loss of information tracks due to recording of signals that cannot be reproduced correctly and loss of information due to missed recording timing, and it is possible to provide a highly safe recording device using a semiconductor laser.

さらに、円盤状記録担体の回転速度が規定値以上になっ
た後にレーザ不良判別手段を動作させるなめ、円盤状記
録担体に照射されるレーザ光のパワー密度をさらに小さ
くすることができ、より安全性が向上する。
Furthermore, since the laser defect determination means is activated after the rotational speed of the disc-shaped record carrier exceeds a specified value, the power density of the laser beam irradiated to the disc-shaped record carrier can be further reduced, resulting in greater safety. will improve.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す半導体レーザ不良検出
装置のブロック図、第2図は第1図のレーザ不良判別手
段のプログラムを示すフローチャート図である。 1・・・レーザパワー制御回路、2・・・光学ヘッド、
3・・・光量検出器、4・・・回転検出器、5・・・デ
ィスク、7・・−レーザ不良判別手段、8・・・フォー
カス制御回路。
FIG. 1 is a block diagram of a semiconductor laser defect detection device showing an embodiment of the present invention, and FIG. 2 is a flowchart showing a program of the laser defect determination means of FIG. 1... Laser power control circuit, 2... Optical head,
3... Light amount detector, 4... Rotation detector, 5... Disk, 7... Laser defect determination means, 8... Focus control circuit.

Claims (1)

【特許請求の範囲】 1、半導体レーザの出力を制御するレーザパワー制御回
路と、レーザ出射光量が規定値以下であるかどうかを検
出する光量検出器と、前記レーザパワー制御回路を記録
パワー制御に切り換え、前記光量検出器の検出信号によ
りフォーカス制御回路を駆動させるか否かを選択するレ
ーザ不良判別手段とを備えた半導体レーザ不良検出装置
。 2、円盤状記録担体の回転速度が規定値以上であるかど
うかを検出する回転検出器を備え、レーザ不良判別手段
は、前記回転検出器からの検出信号により前記円盤状記
録担体の回転速度の立ち上がりを確認後、レーザパワー
制御回路を記録パワー制御に切り換え、光量検出器の検
出信号によりフォーカス制御回路を駆動させるか否かを
選択する構成とした請求項1記載の半導体レーザ不良検
出装置。
[Claims] 1. A laser power control circuit that controls the output of the semiconductor laser, a light amount detector that detects whether the amount of laser emitted light is below a specified value, and the laser power control circuit that controls the recording power. A semiconductor laser defect detection device comprising: a laser defect determination means for switching and selecting whether or not to drive a focus control circuit based on a detection signal from the light amount detector. 2. A rotation detector is provided for detecting whether the rotation speed of the disk-shaped record carrier is equal to or higher than a specified value, and the laser defect determination means detects the rotation speed of the disk-shaped record carrier based on the detection signal from the rotation detector. 2. The semiconductor laser defect detection device according to claim 1, wherein after confirming the rise, the laser power control circuit is switched to recording power control, and it is selected whether or not to drive the focus control circuit based on a detection signal from a light amount detector.
JP2031875A 1990-02-13 1990-02-13 Semiconductor laser failure detector Expired - Fee Related JP2834254B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2031875A JP2834254B2 (en) 1990-02-13 1990-02-13 Semiconductor laser failure detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2031875A JP2834254B2 (en) 1990-02-13 1990-02-13 Semiconductor laser failure detector

Publications (2)

Publication Number Publication Date
JPH03235223A true JPH03235223A (en) 1991-10-21
JP2834254B2 JP2834254B2 (en) 1998-12-09

Family

ID=12343213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2031875A Expired - Fee Related JP2834254B2 (en) 1990-02-13 1990-02-13 Semiconductor laser failure detector

Country Status (1)

Country Link
JP (1) JP2834254B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6970411B2 (en) 1993-04-12 2005-11-29 Olympus Optical Co., Ltd. Apparatus for recording and/or reproducing information and/or from optical information record disk

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6970411B2 (en) 1993-04-12 2005-11-29 Olympus Optical Co., Ltd. Apparatus for recording and/or reproducing information and/or from optical information record disk

Also Published As

Publication number Publication date
JP2834254B2 (en) 1998-12-09

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