JPH03233974A - Manufacture of nonvolatile semiconductor memory - Google Patents

Manufacture of nonvolatile semiconductor memory

Info

Publication number
JPH03233974A
JPH03233974A JP2903090A JP2903090A JPH03233974A JP H03233974 A JPH03233974 A JP H03233974A JP 2903090 A JP2903090 A JP 2903090A JP 2903090 A JP2903090 A JP 2903090A JP H03233974 A JPH03233974 A JP H03233974A
Authority
JP
Japan
Prior art keywords
formed
groove
surface
cost
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2903090A
Inventor
Kanji Hirano
Original Assignee
Matsushita Electron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electron Corp filed Critical Matsushita Electron Corp
Priority to JP2903090A priority Critical patent/JPH03233974A/en
Publication of JPH03233974A publication Critical patent/JPH03233974A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To shorten reading time and to reduce a cost by forming a floating gate in a groove provided on a semiconductor substrate.
CONSTITUTION: A floating gate electrode 5 in which its almost thickness is disposed in a groove 12 is formed in contact with first insulating films 4 formed on the side and bottom of the groove 12 on the surface of a first conductivity type semiconductor substrate 20, a second insulating film 7 is formed on the exposed surface, a control gate electrode 8 is formed on the exposed surface of the electrode 5 through the second insulating film, and a second conductivity type region 11 is formed on the surface of the substrate 20 through the groove. Thus, 4-layer continuous etching steps are eliminated a memory cell can be patterned simultaneously with a peripheral transistor, and reading time, a cost can be reduced.
COPYRIGHT: (C)1991,JPO&Japio
JP2903090A 1990-02-08 1990-02-08 Manufacture of nonvolatile semiconductor memory Pending JPH03233974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2903090A JPH03233974A (en) 1990-02-08 1990-02-08 Manufacture of nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2903090A JPH03233974A (en) 1990-02-08 1990-02-08 Manufacture of nonvolatile semiconductor memory

Publications (1)

Publication Number Publication Date
JPH03233974A true JPH03233974A (en) 1991-10-17

Family

ID=12265012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2903090A Pending JPH03233974A (en) 1990-02-08 1990-02-08 Manufacture of nonvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPH03233974A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19525756A1 (en) * 1994-07-14 1996-02-08 Micron Technology Inc Field isolation device floating control terminal and method for manufacturing the device
US6057574A (en) * 1996-09-30 2000-05-02 Nec Corporation Contactless nonvolatile semiconductor memory device having buried bit lines surrounded by grooved insulators
JP2005252265A (en) * 2004-03-04 2005-09-15 Texas Instruments Inc Transistor, method for forming electric current channel in substrate, and mobile electronic device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194573A (en) * 1984-03-16 1985-10-03 Toshiba Corp Semiconductor memory device
JPS61179579A (en) * 1985-02-04 1986-08-12 Mitsubishi Electric Corp Semiconductor device
JPS61294869A (en) * 1985-06-21 1986-12-25 Toshiba Corp Semiconductor device and manufacture thereof
JPS62159472A (en) * 1986-01-07 1987-07-15 Seiko Epson Corp Semiconductor nonvolatile memory cell
JPS6410673A (en) * 1987-07-02 1989-01-13 Fujitsu Ltd Non volatile semiconductor memory device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194573A (en) * 1984-03-16 1985-10-03 Toshiba Corp Semiconductor memory device
JPS61179579A (en) * 1985-02-04 1986-08-12 Mitsubishi Electric Corp Semiconductor device
JPS61294869A (en) * 1985-06-21 1986-12-25 Toshiba Corp Semiconductor device and manufacture thereof
JPS62159472A (en) * 1986-01-07 1987-07-15 Seiko Epson Corp Semiconductor nonvolatile memory cell
JPS6410673A (en) * 1987-07-02 1989-01-13 Fujitsu Ltd Non volatile semiconductor memory device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19525756A1 (en) * 1994-07-14 1996-02-08 Micron Technology Inc Field isolation device floating control terminal and method for manufacturing the device
US5693971A (en) * 1994-07-14 1997-12-02 Micron Technology, Inc. Combined trench and field isolation structure for semiconductor devices
US5903026A (en) * 1994-07-14 1999-05-11 Micron Technology, Inc. Isolation structure for semiconductor devices
US6130140A (en) * 1994-07-14 2000-10-10 Micron Technology, Inc. Method of forming an isolation structure in a semiconductor device
US6479880B1 (en) 1994-07-14 2002-11-12 Micron Technology, Inc. Floating gate isolation device
DE19525756B4 (en) * 1994-07-14 2005-06-30 Micron Technology, Inc. Isolation structure for semiconductor devices floating control terminal and processes for their preparation
US6057574A (en) * 1996-09-30 2000-05-02 Nec Corporation Contactless nonvolatile semiconductor memory device having buried bit lines surrounded by grooved insulators
US6274432B1 (en) 1996-09-30 2001-08-14 Nec Corporation Method of making contactless nonvolatile semiconductor memory device having buried bit lines surrounded by grooved insulators
JP2005252265A (en) * 2004-03-04 2005-09-15 Texas Instruments Inc Transistor, method for forming electric current channel in substrate, and mobile electronic device

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