JPH03232228A - Liquid processor of semiconductor wafer - Google Patents

Liquid processor of semiconductor wafer

Info

Publication number
JPH03232228A
JPH03232228A JP2882290A JP2882290A JPH03232228A JP H03232228 A JPH03232228 A JP H03232228A JP 2882290 A JP2882290 A JP 2882290A JP 2882290 A JP2882290 A JP 2882290A JP H03232228 A JPH03232228 A JP H03232228A
Authority
JP
Japan
Prior art keywords
liquid
cleaning
wafer
wafers
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2882290A
Other languages
Japanese (ja)
Other versions
JP2837725B2 (en
Inventor
Masanori Kobayashi
正典 小林
Tadayoshi Yoshikawa
忠義 吉川
Kazuji Nakajima
和司 中嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu VLSI Ltd
Fujitsu Ltd
Original Assignee
Fujitsu VLSI Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu VLSI Ltd, Fujitsu Ltd filed Critical Fujitsu VLSI Ltd
Priority to JP2882290A priority Critical patent/JP2837725B2/en
Publication of JPH03232228A publication Critical patent/JPH03232228A/en
Application granted granted Critical
Publication of JP2837725B2 publication Critical patent/JP2837725B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To avoid the occurrence of uneven processings, dust adherence etc., on the mirror surface by a method wherein processing liquid feeding pipes are provided on the lower part near the bottom surface of a liquid processing vessel for detachably retaining multiple semiconductor wafers in the erected state. CONSTITUTION:A retainer 2 wherein multiple wafers 1 are inserted is set in a washing up vessel 10 striding across the first liquid feeding pipe 11 so that cleaning up liquid 6 may be fed from the first and second liquid feeding pipes 11 and 12 as shown by arrows W1 and W2. The cleaning up liquid 6 is jetted from pores 11a to be lifted between respective wafers 1 as shown by the arrow W2 for cleaning up the surfaces of respective wafer 1. On the other hand, the cleaning up liquid fed from the pipe 12 is mixed with the cleaning up liquid 6 fed from the pipe 11 to be drained from a liquid drainage pipe 13 as shown by the other arrow W5. Respective wafers 1 retained by the retainer 2 are pressed down in the running direction as shown by the other arrow W4 so that the wafers 1 may be cleaned up in the oblique state almost the same direction within the allowable width range of the guide grooves 2e.

Description

【発明の詳細な説明】 〔概 要〕 半導体装置の製造プロセスにおける半導体つ工−ハの液
体処理装置に関し、 処理後の乾燥時におけるウェーハ表面特に鏡面側への処
理液残滓や塵埃の付着等をなくして半導体デバイスとし
ての特性劣化を防止し生産性の向上を図ることを目的と
し、 複数の半導体ウェーハを立てた状態で着脱自在に平行配
置できる案内溝が内側に形成され、且つ内部を少なくと
も上下方向に液体が自由に貫流できる半導体ウェーハ保
持具と、上記各半導体ウェーハの一部が上方に突出する
ように半導体ウェーハを装着した上記半導体ウェーハ保
持具を該半導体ウェーハと共に浸漬するに足る大きさを
備えた液体処理槽とで構成される半導体ウェーハの液体
処理装置であって、上記液体処理槽が、底面に近い下部
には処理液を供給する第1の給液パイプを備え、液面に
近い位置には少なくとも前記半導体ウェーハの面にほぼ
直交する方向に該処理液を流すための第2の給液パイプ
を備えて構成する。
[Detailed Description of the Invention] [Summary] Regarding a liquid processing device for semiconductor processing in the manufacturing process of semiconductor devices, it is possible to prevent the adhesion of processing liquid residue and dust to the wafer surface, especially the mirror surface side, during drying after processing. In order to prevent characteristic deterioration as a semiconductor device and improve productivity, a guide groove is formed on the inside that allows multiple semiconductor wafers to be removably placed in parallel while standing up. A semiconductor wafer holder through which a liquid can flow freely in the direction, and a semiconductor wafer holder with a semiconductor wafer mounted thereon such that a portion of each semiconductor wafer protrudes upward, the size of which is large enough to allow the semiconductor wafer holder to be immersed together with the semiconductor wafer. A liquid processing apparatus for semiconductor wafers comprising a liquid processing tank equipped with a liquid processing tank, wherein the liquid processing tank has a first liquid supply pipe for supplying the processing liquid at a lower part near the bottom, and a first liquid supply pipe near the liquid surface. At least a second liquid supply pipe is provided at the position for flowing the processing liquid in a direction substantially perpendicular to the surface of the semiconductor wafer.

〔産業上の利用分野〕[Industrial application field]

本発明は半導体装置の製造プロセスにおける半導体ウェ
ーハ(以下単にウェーハとする)の液体処理装置に係り
、特に処理後の乾燥時におけるウェーハ表面とりわけ鏡
面側への処理液残滓や塵埃の付着等をなくして半導体デ
バイスとしての特性劣化を防止し生産性の向上を図った
半導体ウェーハ洗浄装置に関する。
The present invention relates to a liquid processing apparatus for semiconductor wafers (hereinafter simply referred to as wafers) in the manufacturing process of semiconductor devices, and in particular, it eliminates the adhesion of processing liquid residue and dust to the wafer surface, especially the mirror surface side, during drying after processing. The present invention relates to a semiconductor wafer cleaning apparatus that prevents deterioration of characteristics of semiconductor devices and improves productivity.

一般に半導体装置のウェーハの製造プロセスでは多数回
の洗浄や被膜形成処理工程等が必要であるが、半導体装
置としての高集積度化に伴ってウェーハとしては各工程
毎に高度の清浄度が要求されるようになっている。
In general, the manufacturing process for semiconductor device wafers requires multiple cleaning and film-forming processes, but as semiconductor devices become more highly integrated, wafers are required to have a high degree of cleanliness in each step. It has become so.

従って、液体を使用した被膜形成等の処理工程やその後
の洗浄作業では処理液の残滓を完全に除去すると共に洗
浄ムラや塵埃付着等を確実になくすことが必要であるが
、処理液や洗浄液がその表面張力等によってウェーハか
ら完全に除去されないまま乾燥工程に入ると、該処理液
や一洗浄液の残滓が洗浄ムラや塵埃付着等を誘起し爾後
の諸工程で半導体デバイスとしての欠陥を生じ特性を損
なうことからその対策が強く望まれている。
Therefore, in processing processes such as film formation using liquids and subsequent cleaning operations, it is necessary to completely remove the residue of the processing liquid and to ensure that uneven cleaning and dust adhesion are eliminated. If the drying process is started without being completely removed from the wafer due to surface tension, the residue of the processing liquid or cleaning liquid will cause uneven cleaning, dust adhesion, etc., which will cause defects in semiconductor devices and deteriorate their characteristics in subsequent processes. Measures against this problem are strongly desired.

〔従来の技術] 第3図は従来の半導体ウェーハの液体処理方法の例を説
明する図であり、(1)は装置全体を示す構成図、(2
)は(1)を矢印a −a“で切断した内部主要部を示
す図、(3)は(1)を矢印b−b’で切断した内部主
要部の断面図である。
[Prior Art] FIG. 3 is a diagram illustrating an example of a conventional liquid processing method for semiconductor wafers, in which (1) is a block diagram showing the entire apparatus, (2)
) is a view showing the main internal part of (1) taken along arrow a-a'', and (3) is a sectional view of the main internal part taken along arrow bb' of (1).

なお図では洗浄工程の場合について説明する。In addition, the case of the cleaning process will be explained in the figure.

また第4図は問題点を説明する図である。Moreover, FIG. 4 is a diagram explaining the problem.

第3図で、1は例えば6g>径で厚さが0.5mm程度
の被洗浄の半導体ウェーハを示している。
In FIG. 3, reference numeral 1 indicates a semiconductor wafer to be cleaned, for example, with a diameter of 6g>diameter and a thickness of about 0.5 mm.

また、図の2は半導体ウェーハ保持具(以下単に保持具
とする)を表わしている。
Further, 2 in the figure represents a semiconductor wafer holder (hereinafter simply referred to as a holder).

この場合の保持具2は、四隅に稜線方向に突出する脚部
2aを備えた長手方向の壁2bと該壁2bと直交する壁
2cとからなる平面視“ロバの字形をなし、対面する上
記壁2cの間には長手方向に沿って2個の平行する粱2
dを備えると共に、該梁2dの上側端面部分と長手方向
に沿う上記壁2bの対面する内壁面2b’のそれぞれと
には複数の上記ウェーハlを壁2cと平行に立てた状態
で所定間隔(例えば数■間隔)で平行に上方から挿入保
持できる案内溝2eが設けられている。
The holder 2 in this case has a donkey shape in plan view, consisting of a longitudinal wall 2b having legs 2a protruding in the ridge direction at the four corners, and a wall 2c perpendicular to the wall 2b, with Between the walls 2c are two parallel wires 2 along the longitudinal direction.
d, and each of the inner wall surfaces 2b' facing the upper end surface portion of the beam 2d and the wall 2b along the longitudinal direction is provided with a plurality of wafers l standing parallel to the wall 2c at a predetermined interval ( Guide grooves 2e that can be inserted and held from above are provided in parallel at intervals of, for example, several square meters.

なお上記梁2dの固定位置は、上記ウェーハ1の着脱を
容易にするため上、記壁2cの上部に該ウェーハ1の一
部が突出するように設定されている。
The fixing position of the beam 2d is set so that a part of the wafer 1 protrudes above the wall 2c to facilitate attachment and detachment of the wafer 1.

またこの場合の該案内溝28の幅りは処理工程中におけ
る該ウェハ1の反りや曲がりにも対応できるように通常
上記ウェハ1の厚さの3〜4倍例えば1.5〜2.0m
m程度に形成されている。
Further, in this case, the width of the guide groove 28 is usually 3 to 4 times the thickness of the wafer 1, for example, 1.5 to 2.0 m, in order to cope with warpage and bending of the wafer 1 during the processing process.
It is formed to about m.

従って複数のウェーハ1を保持具2の上部から該答案内
溝2eに沿って挿入することで複数のつ工−ハ1を一定
した間隔でほぼ平行に整列させることができる。
Therefore, by inserting a plurality of wafers 1 from the upper part of the holder 2 along the answer guide groove 2e, the plurality of wafers 1 can be aligned substantially in parallel at regular intervals.

また図の洗浄槽3はウェーハ1を挿入した状態の上記保
持具2をウェーハ1を含めて収容するに足る大きさを有
するものであり、その底面に近い下部の所定位置には該
底面側に複数の孔4aを備えた給液パイプ4が保持具2
の長手方向に沿って装着されており、また上部開口周囲
には樋3aが該開口を取り巻いて形成されている。
The cleaning tank 3 shown in the figure has a size sufficient to accommodate the holder 2 including the wafer 1 with the wafer 1 inserted therein. A liquid supply pipe 4 equipped with a plurality of holes 4a is attached to the holder 2.
A gutter 3a is formed around the upper opening, surrounding the upper opening.

なお該樋3aに繋がる5は排液パイプである。Note that 5 connected to the gutter 3a is a drain pipe.

ここで、図に示す如く上記ウェーハ1が挿入された保持
具2を、脚部2aの間で上記給液パイプ4を跨ぐように
該洗浄槽3にセツティングした状態で、給液パイプ4か
ら洗浄液6を1のように給水すると、該洗浄液6は給液
パイプ4の上記孔4aから噴出し洗浄槽3の底面にぶつ
かった後、町のように各ウェーハ1の間を上昇し、該各
ウェーハ1の表面を洗浄する。
Here, as shown in the figure, the holder 2 into which the wafer 1 has been inserted is set in the cleaning tank 3 so as to straddle the liquid supply pipe 4 between the legs 2a, and the liquid supply pipe 4 is inserted into the holder 2. When the cleaning liquid 6 is supplied as shown in step 1, the cleaning liquid 6 is ejected from the hole 4a of the liquid supply pipe 4, hits the bottom of the cleaning tank 3, and then rises between each wafer 1 like a town, and flows through each wafer 1. The surface of wafer 1 is cleaned.

なお該洗浄槽3の上部開口周囲から1のように溢れ出る
洗浄液6は、#l13aに流れ込んだ後排液パイプ5か
ら−4となって排出される。
Note that the cleaning liquid 6 overflowing from around the upper opening of the cleaning tank 3 as shown in 1 flows into #113a and is then discharged from the drain pipe 5 as -4.

かかる洗浄方法では、各ウェーハ1の表面に付着してい
る塵埃等は洗浄液6の流れに追従して水面に浮上した後
、開口周囲に設けた樋3aから排出されるため効率の良
い洗浄作業を行うことができる。
In this cleaning method, dust etc. adhering to the surface of each wafer 1 follows the flow of the cleaning liquid 6 and floats to the water surface, and then is discharged from the gutter 3a provided around the opening, resulting in efficient cleaning work. It can be carried out.

そこで、所定の洗浄作業が終了した時点で保持具2を該
洗浄槽3から引き上げて取り出し乾燥して所要の洗浄工
程を終了させることができる。
Therefore, when a predetermined cleaning operation is completed, the holder 2 can be pulled up from the cleaning tank 3, taken out and dried, and the required cleaning process can be completed.

問題点を示す第4図は洗浄槽から取り出した後の乾燥時
の状態を示したもので、図では理解し易くするためにウ
ェーハの部分を拡大して表わしている。
FIG. 4, which shows the problem, shows the state when the wafer is dried after being taken out from the cleaning tank, and the wafer is enlarged in the figure for ease of understanding.

図で、1が半導体ウェーハを示し、2が保持具を表わし
ていることは第3図と同様である。
In the figure, 1 indicates a semiconductor wafer and 2 indicates a holder, which is the same as in FIG. 3.

通常洗浄作業が終了したウェーハ1を保持具2と共に洗
浄槽から取り出すと、図に示す如く各ウェーハ1は保持
具2の内壁面2b’および梁2dに設けである案内溝2
eの幅の許容範囲内でランダムの方向に傾いた状態で安
定する。
When the wafers 1 that have been subjected to normal cleaning work are taken out from the cleaning tank together with the holder 2, each wafer 1 is placed in the guide groove 2 provided on the inner wall surface 2b' and the beam 2d of the holder 2, as shown in the figure.
It is stabilized in a state tilted in a random direction within the allowable range of the width of e.

この場合該保持具2を洗浄槽から取り出した時点では、
洗浄液の一部はその表面張力によって図示のドツト領域
p、〜p7のように各案内溝2eとの間の隙間の小さい
部分や近接したウェーl\の間等に残留する。
In this case, when the holder 2 is taken out from the cleaning tank,
Due to its surface tension, a part of the cleaning liquid remains in small areas between the guide grooves 2e and the adjacent wafers 1, as shown in the illustrated dot areas p, -p7.

この状態で乾燥作業で残留洗浄液を蒸発させると、該各
残留洗浄液中に含まれる塵埃等のみがウェーハ1の両側
表面に付着することになり、結果的に乾燥ムラや塵埃付
着等が発生する。
If the residual cleaning liquid is evaporated during the drying operation in this state, only the dust contained in each residual cleaning liquid will adhere to both surfaces of the wafer 1, resulting in uneven drying and dust adhesion.

特に図のドツト領域91部分の如くウェーハ1の上部に
残留する洗浄液はその自重によって垂れ下がる形となる
ことから残留する量が多く、乾燥ムラや塵埃付着等によ
って汚染される領域が大きくなる。
In particular, the cleaning liquid remaining on the upper part of the wafer 1, as in the dot area 91 in the figure, hangs down due to its own weight, so a large amount remains, and the area that is contaminated by uneven drying, dust adhesion, etc. becomes large.

〔発明が解決しようとする課題] 従来のウェーハの液体処理方法では、乾燥するために保
持具を処理槽から取り出したときにつ工−ハと該保持具
の各案内溝との間や近接したつ工−ハの間等に処理液の
一部が残留するため、乾燥作業終了時にウェーハの両側
表面に乾燥ムラや塵埃付着等が発生すると云う問題があ
った。
[Problems to be Solved by the Invention] In the conventional liquid processing method for wafers, when the holder is taken out from the processing tank for drying, there is a possibility that there is a Since a portion of the processing liquid remains between the wafers and the like, there has been a problem in that uneven drying and dust adhesion occur on both surfaces of the wafer at the end of the drying operation.

〔課題を解決するための手段〕[Means to solve the problem]

上記問題点は、複数の半導体ウェーハを立てた状態で着
脱自在に平行配置できる案内溝が内側に形成され、且つ
内部を少なくとも上下方向に液体が自由に貫流できる半
導体ウェーハ保持具と、上記各半導体ウェーハの一部が
上方に突出するように半導体ウェーハを装着した上記半
導体ウェーハ保持具を該半導体ウェーハと共に浸漬する
に足る大きさを備えた液体処理槽とで構成される半導体
ウェーハの液体処理装置であって、上記液体処理槽が、
底面に近い下部には処理液を供給する第1の給液バイブ
を備え、液面に近い位置には少な(とも前記半導体ウェ
ーハの面にほぼ直交する方向に該処理液を流すための第
2の給液バイブが備えられている半導体ウェーハの液体
処理装置によって解決される。
The above-mentioned problem is solved by a semiconductor wafer holder, which has guide grooves formed on the inside that can be removably arranged in parallel with a plurality of semiconductor wafers in an upright state, and which allows liquid to freely flow through the inside at least in the vertical direction; A liquid processing apparatus for semiconductor wafers, comprising a liquid processing tank having a size sufficient to immerse the semiconductor wafer holder and the semiconductor wafer together with the semiconductor wafer holder so that a part of the wafer protrudes upward. Therefore, the liquid treatment tank is
A first liquid supply vibrator is provided at the lower part near the bottom surface for supplying the processing liquid, and a second liquid supply vibrator is provided at a position near the liquid surface to flow the processing liquid in a direction substantially perpendicular to the surface of the semiconductor wafer. The present invention is solved by a semiconductor wafer liquid processing apparatus equipped with a liquid supply vibrator.

〔作 用] 通常の半導体ウェーハはその片面をパターン形成面すな
わち鏡面としている。
[Function] A normal semiconductor wafer has one side as a pattern-forming surface, that is, a mirror surface.

本発明では、ウェーハの上記鏡面側には少なくとも処理
液や洗浄液の残滓が滞留しないように液体処理装置を構
成している。
In the present invention, the liquid processing apparatus is configured so that at least the residue of the processing liquid or the cleaning liquid does not remain on the mirror surface side of the wafer.

従って、ウェーハの必要とする鏡面側に処理ムラや塵埃
付着等が発生することがなくなって生産性のよい処理を
実現させることができる。
Therefore, processing unevenness, dust adhesion, etc. do not occur on the mirror surface side of the wafer, which is required, and processing with high productivity can be realized.

[実施例] 第1図は本発明になる半導体ウェーハの液体処理装置を
説明する構成図であり、第2図は乾燥時の状態を示す図
であるが、いずれも第3図同様に洗浄工程の場合を例と
している。
[Example] Fig. 1 is a configuration diagram illustrating a semiconductor wafer liquid processing apparatus according to the present invention, and Fig. 2 is a diagram showing a state during drying, but both of them are similar to Fig. 3 in the cleaning process. The case of is taken as an example.

第1図で、被洗浄のウェーハ1と保持具2は第3図で説
明したものである。
In FIG. 1, the wafer 1 to be cleaned and the holder 2 are those described in FIG.

また第3図の洗浄槽3と同様の大きさを有する洗浄槽(
液体処理槽)10は、その底面に近い下部には第3図同
様の孔11aを備えた第1の給液バイブ11が同じ位置
に設けられていると共に、該洗浄槽10の上部液面に近
い位置で該給液バイブ11と対応する位置の片側壁面1
0aには第2の給液パイプ12がその先端部がわずかに
該洗浄槽10の内部に突出するように配設されており、
更に上記壁面10aと対面する壁面10bの上部液面近
傍には排液パイプ13が設けれている。
In addition, a cleaning tank (
The liquid processing tank 10 has a first liquid supply vibrator 11 equipped with a hole 11a similar to that shown in FIG. One side wall surface 1 at a position corresponding to the liquid supply vibrator 11 at a nearby position
A second liquid supply pipe 12 is disposed at 0a so that its tip slightly protrudes into the cleaning tank 10.
Further, a drain pipe 13 is provided near the upper liquid level of the wall surface 10b facing the wall surface 10a.

ここで、図に示す如く複数のウェーハ1が挿入された保
持具2を上記第1の給液パイプ11を跨ぐ形で該洗浄槽
10にセツティングした状態で、該第1の給液パイプ1
1および第2の給液パイプ12から洗浄液6を−1およ
び−3のように給水すると、第1の給液パイプ11から
供給される洗浄液6は第3図の場合と同様に孔11aか
ら噴出し洗浄槽10の底面にぶつかった後−2のように
各ウェーハ1の間を上昇して該各ウェーハ1の表面を洗
浄する。
Here, as shown in the figure, the holder 2 into which a plurality of wafers 1 have been inserted is set in the cleaning tank 10 so as to straddle the first liquid supply pipe 11.
When the cleaning liquid 6 is supplied from the first and second liquid supply pipes 12 as indicated by -1 and -3, the cleaning liquid 6 supplied from the first liquid supply pipe 11 is ejected from the hole 11a as in the case of FIG. After hitting the bottom of the cleaning tank 10, it ascends between each wafer 1 as shown in -2 to clean the surface of each wafer 1.

一方、第2の給液パイプ12から注入される洗浄液6は
誓、のようにほぼそのまま直進し上記第1の給液パイプ
11から供給される洗浄液6と一緒になって上記排液パ
イプ13から魁となって排出されることになる。
On the other hand, the cleaning liquid 6 injected from the second liquid supply pipe 12 travels almost straight as shown, and together with the cleaning liquid 6 supplied from the first liquid supply pipe 11, it flows out from the drain pipe 13. He will be ejected as a fugitive.

この場合保持具2に保持されている各ウェーハ1は、そ
の上部近傍領域を流れる第2の給液パイプ12からの洗
浄液6によってその流れ方向すなわちW4の方向に押圧
されるため、第3図で説明した案内溝2eの幅の許容範
囲内でほぼ同一方向に傾いた状態で洗浄される。
In this case, each wafer 1 held in the holder 2 is pressed in the flow direction, that is, in the direction of W4, by the cleaning liquid 6 from the second liquid supply pipe 12 flowing near the upper part of the wafer 1. The guide grooves 2e are cleaned while being inclined in substantially the same direction within the permissible range of the width of the guide groove 2e.

次いで所定の洗浄作業が終了した時点で該保持具2を洗
浄槽10から取り出すが、この場合線保持具2を持ち上
げる途中までは上記第2の給液パイプ12からの洗浄液
6によって各ウェーハ1が同一方向に押圧されるため上
記同様に傾いた状態にある。
Next, when the predetermined cleaning work is completed, the holder 2 is taken out from the cleaning tank 10, but in this case, each wafer 1 is washed by the cleaning liquid 6 from the second liquid supply pipe 12 until the wire holder 2 is lifted up. Since they are pressed in the same direction, they are in the same tilted state as above.

該保持具2が更に持ち上げられると、上記第2の給液パ
イプ12からの洗浄液6が第3図で説明した保持具2の
長手方向に直交する壁2cで左右に分割されるため直接
各ウェーハ1を押圧することがなく、該各ウェーハ1は
そのままの状態で該洗浄槽10から取り出されることに
なる。
When the holder 2 is further lifted, the cleaning liquid 6 from the second liquid supply pipe 12 is divided into left and right sides by the wall 2c perpendicular to the longitudinal direction of the holder 2 explained in FIG. Each wafer 1 is taken out from the cleaning tank 10 as it is without pressing the wafer 1 .

乾燥状態を示す第2図はかかる状態を表わしたもので、
図示の如く各ウェーハ1は保持具2の案内溝2eの幅の
許容範囲内で同じ方向に傾いた状態で安定している。
Figure 2, which shows the dry state, represents such a state.
As shown in the figure, each wafer 1 is tilted in the same direction and stabilized within the allowable width of the guide groove 2e of the holder 2.

二の場合線保持具2を洗浄槽から取り出した時点では、
各ウェーハlが同じ方向にほぼ平行して傾いているため
図示のドツト領域P、〜pHのように各案内溝2eとの
間の隙間の小さい部分にのみ洗浄液の一部が残留する。
In case 2, when the wire holder 2 is taken out from the cleaning tank,
Since each wafer 1 is tilted substantially parallel to the same direction, a portion of the cleaning liquid remains only in a small portion of the gap between the wafer 1 and each guide groove 2e, as shown in the illustrated dot region P, ~pH.

特にこの場合には、洗浄液6の残留する面は片面すなわ
ち1aの面のみである。
Particularly in this case, the cleaning liquid 6 remains on only one surface, that is, the surface 1a.

従って、該洗浄液6の残留する面1aが非鏡面側となる
ように、換言すれば第1図における第2の給液パイプ1
2の壁面10a側が鏡面1bとなるように各ウェーハl
を該保持具2の案内溝2eに挿入することで、少なくと
もウェーハ1の必要とする鏡面lb側には乾燥ムラや塵
埃付着等が発生することがない。
Therefore, in order that the surface 1a on which the cleaning liquid 6 remains is the non-mirror side, in other words, the second liquid supply pipe 1 in FIG.
Each wafer l is placed so that the wall surface 10a side of 2 becomes the mirror surface 1b.
By inserting the wafer into the guide groove 2e of the holder 2, uneven drying, dust adhesion, etc. will not occur at least on the required mirror surface lb side of the wafer 1.

〔発明の効果〕〔Effect of the invention〕

上述の如く本発明により、処理後の乾燥時におけるウェ
ーハ表面とりわけ鏡面側への処理液残滓や塵埃の付着等
をなくして半導体デバイスとしての特性劣化を防止し生
産性の向上を図った半導体ウェーハの液体処理装置を提
供することができる。
As described above, the present invention provides a semiconductor wafer which eliminates the adhesion of processing liquid residue and dust to the wafer surface, especially the mirror surface side, during drying after processing, thereby preventing deterioration of characteristics as a semiconductor device and improving productivity. A liquid handling device can be provided.

なお本発明の説明に当たっては処理液体を洗浄液の場合
で説明しているが、例えば露光後の現像・定着処理液等
地の液体による処理工程の場合でも同等の効果を得るこ
とができる。
Although the present invention is explained using a cleaning liquid as the processing liquid, the same effect can be obtained even in the case of a processing step using a background liquid such as a developing/fixing processing liquid after exposure.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明になる半導体ウェーへの液体処理装置を
説明する構成図、 第2図は乾燥時の状態を示す図、 第3図は従来の半導体ウェーハの液体処理方法の例を説
明する図、 第4図は問題点を説明する図、 である。図において、 1は半導体ウェハ、 1aは面、1bは鏡面、2は半導
体ウェーハ保持具、 2cは壁、       2eは案内溝、6は洗浄液、 10は洗浄槽(液体処理槽)、 10a、 Jobは壁面、 llは第1の給液パイプ、 12は第2の給液パイプ、 をそれぞれ表わしている。 11aは孔、 13は排液パイプ、 本発明1こd手導体ウェーハozm理茨置と説明T3構
欣図 第 図 乾濤吟の状態Σ示↑図 第2図
Fig. 1 is a block diagram illustrating the liquid processing apparatus for semiconductor wafers according to the present invention, Fig. 2 is a diagram showing the state during drying, and Fig. 3 is an illustration of an example of a conventional liquid processing method for semiconductor wafers. Figure 4 is a diagram explaining the problem. In the figure, 1 is a semiconductor wafer, 1a is a surface, 1b is a mirror surface, 2 is a semiconductor wafer holder, 2c is a wall, 2e is a guide groove, 6 is a cleaning liquid, 10 is a cleaning tank (liquid processing tank), 10a and Job are 11 represents a wall surface, 11 represents a first liquid supply pipe, and 12 represents a second liquid supply pipe. 11a is a hole, 13 is a drain pipe, 1st part of the present invention: 1) Hand conductor wafer ozm processing and explanation T3 construction diagram Figure 2

Claims (1)

【特許請求の範囲】 複数の半導体ウェーハ(1)を立てた状態で着脱自在に
平行配置できる案内溝(2e)が内側に形成され、且つ
内部を少なくとも上下方向に液体が自由に貫流できる半
導体ウェーハ保持具(2)と、上記各半導体ウェーハ(
1)の一部が上方に突出するように半導体ウェーハ(1
)を装着した上記半導体ウェーハ保持具(2)を該半導
体ウェーハ(1)と共に浸漬するに足る大きさを備えた
液体処理槽(10)とで構成される半導体ウェーハの液
体処理装置であって、 上記液体処理槽(10)が、底面に近い下部には処理液
を供給する第1の給液パイプ(11)を備え、液面に近
い位置には少なくとも前記半導体ウェーハ(1)の面に
ほぼ直交する方向に該処理液を流すための第2の給液パ
イプ(12)が備えられていることを特徴とした半導体
ウェーハの液体処理装置。
[Scope of Claims] A semiconductor wafer in which a guide groove (2e) is formed on the inside so that a plurality of semiconductor wafers (1) can be detachably arranged in parallel in an upright state, and a liquid can freely flow through the inside at least in the vertical direction. Holder (2) and each of the above semiconductor wafers (
The semiconductor wafer (1) is placed so that a part of the semiconductor wafer (1) protrudes upward.
) A liquid processing apparatus for semiconductor wafers comprising a liquid processing tank (10) having a size sufficient to immerse the semiconductor wafer holder (2) equipped with the semiconductor wafer (1) together with the semiconductor wafer (1), The liquid processing tank (10) is provided with a first liquid supply pipe (11) for supplying the processing liquid at a lower part near the bottom, and at a position near the liquid surface at least approximately on the surface of the semiconductor wafer (1). A liquid processing apparatus for semiconductor wafers, characterized in that a second liquid supply pipe (12) is provided for flowing the processing liquid in an orthogonal direction.
JP2882290A 1990-02-08 1990-02-08 Liquid processing equipment for semiconductor wafers Expired - Fee Related JP2837725B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2882290A JP2837725B2 (en) 1990-02-08 1990-02-08 Liquid processing equipment for semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2882290A JP2837725B2 (en) 1990-02-08 1990-02-08 Liquid processing equipment for semiconductor wafers

Publications (2)

Publication Number Publication Date
JPH03232228A true JPH03232228A (en) 1991-10-16
JP2837725B2 JP2837725B2 (en) 1998-12-16

Family

ID=12259092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2882290A Expired - Fee Related JP2837725B2 (en) 1990-02-08 1990-02-08 Liquid processing equipment for semiconductor wafers

Country Status (1)

Country Link
JP (1) JP2837725B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766169A (en) * 1993-08-23 1995-03-10 Nec Kansai Ltd Wet treatment equipment
US5799678A (en) * 1995-12-19 1998-09-01 Lg Semicon Co., Ltd. Apparatus for cleansing semiconductor wafer
US5927302A (en) * 1992-04-07 1999-07-27 Fujitsu Limited Method for rinsing plate-shaped articles and cleaning bath and cleaning equipment used in the same
US6279590B1 (en) * 1997-09-19 2001-08-28 Sharp Kabushiki Kaisha Cleaning method and cleaning apparatus
KR100480606B1 (en) * 2002-08-01 2005-04-06 삼성전자주식회사 Apparatus for drying semiconductor wafer using IPA vapor drying method
JP2014017369A (en) * 2012-07-09 2014-01-30 Sharp Corp Cleaning apparatus and cleaning method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5927302A (en) * 1992-04-07 1999-07-27 Fujitsu Limited Method for rinsing plate-shaped articles and cleaning bath and cleaning equipment used in the same
JPH0766169A (en) * 1993-08-23 1995-03-10 Nec Kansai Ltd Wet treatment equipment
US5799678A (en) * 1995-12-19 1998-09-01 Lg Semicon Co., Ltd. Apparatus for cleansing semiconductor wafer
US6279590B1 (en) * 1997-09-19 2001-08-28 Sharp Kabushiki Kaisha Cleaning method and cleaning apparatus
KR100480606B1 (en) * 2002-08-01 2005-04-06 삼성전자주식회사 Apparatus for drying semiconductor wafer using IPA vapor drying method
US7131217B2 (en) 2002-08-01 2006-11-07 Samsung Electronics Co., Ltd. Apparatus and method for drying semiconductor wafers using IPA vapor drying method
JP2014017369A (en) * 2012-07-09 2014-01-30 Sharp Corp Cleaning apparatus and cleaning method

Also Published As

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