JPH03208019A - Production of liquid crystal display device - Google Patents

Production of liquid crystal display device

Info

Publication number
JPH03208019A
JPH03208019A JP2003863A JP386390A JPH03208019A JP H03208019 A JPH03208019 A JP H03208019A JP 2003863 A JP2003863 A JP 2003863A JP 386390 A JP386390 A JP 386390A JP H03208019 A JPH03208019 A JP H03208019A
Authority
JP
Japan
Prior art keywords
rubbing
humidity
tpt
liquid crystal
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003863A
Other languages
Japanese (ja)
Inventor
Koji Ishikawa
幸司 石川
Nobuhiko Ohashi
大橋 信彦
Tsukasa Ando
司 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP2003863A priority Critical patent/JPH03208019A/en
Publication of JPH03208019A publication Critical patent/JPH03208019A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To lessen the generation of static electricity and to prevent the electrostatic breakdown of thin-film transistors (TFTs) by executing a rubbing treatment in a steam atmosphere. CONSTITUTION:A TFT substrate 1 provided with the TFTs in a matrix shape is mounted on a movable table 2 and the rubbing treatment is executed while steam 4 is blown to the periphery of the contact part of a rubbing treating roller 3 at the time of forming an oriented film on the substrate 1. The steam humidity is preferably 70 to 90%. The electrostatic charge quantity is high if the humidity is below 70%. Water drops stick to the rubbing treating part and the stability of the rubbing treatment is inferior if the humidity exceeds 90%. The more preferably humidity is 75 to 85%. The charge quantity at such humidity is about 0.02 to 0.03kV and can be decreased to the lower value of about 1/3 to 1/15 the dielectric strength of the TFTs.

Description

【発明の詳細な説明】 〔産業上の利用分野] 本発明は,薄膜トランジスタ(TPT)を用いたアクテ
ィブマトリクス型液晶表示素子(LCD)の製造方法,
特にその配向膜のラビング処理方法に関する. 〔従来技術〕 液晶表示素子は,周知のごと<,TPT基板と,その上
に設けた配向膜と.該配向膜と一方の配向膜との間に介
在させた液晶材と.共通電極基板とよりなる。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing an active matrix liquid crystal display (LCD) using a thin film transistor (TPT);
In particular, it concerns the rubbing treatment method for the alignment film. [Prior Art] As is well known, a liquid crystal display element consists of a TPT substrate and an alignment film provided thereon. A liquid crystal material interposed between the alignment film and one of the alignment films. Consists of a common electrode substrate.

そして,上記TPT基板上に設ける配向膜は該TPT基
板の上に印刷,焼威され,その後その配同性を一定にす
るためラビング処理が行われる。
Then, the alignment film provided on the TPT substrate is printed and burnt on the TPT substrate, and then a rubbing process is performed to make the orientation constant.

このラビング処理は,配向膜の表面を布等により一方向
にラビングすることにより行なわれる.しかしながら,
該配向膜は絶縁性の有機薄膜であるため.このラビング
処理の際に静電気を帯び易い。そして.この静電気は,
薄膜トランジスタ(TPT)を静電気破壊する大きな原
因となる。
This rubbing process is performed by rubbing the surface of the alignment film in one direction with a cloth or the like. however,
This is because the alignment film is an insulating organic thin film. Static electricity is likely to be generated during this rubbing process. and. This static electricity is
This is a major cause of electrostatic damage to thin film transistors (TPT).

なお.一般に静電気に対するTPTの耐圧は0.1〜0
、3KV,高耐圧TPT’?’も0.4KV程度である
In addition. Generally, the withstand voltage of TPT against static electricity is 0.1 to 0.
, 3KV, high voltage TPT'? ' is also about 0.4KV.

そこで.従来,上記TPTのゲート電極端子群と1 ソ
ース電極端子群を,全周で短絡(ガードフレーム法)し
ておき,上記ラビングを行う方法が提案されている(特
開昭61−12268号,特開昭61−59475号公
報参照)。
Therefore. Conventionally, a method has been proposed in which the gate electrode terminal group and one source electrode terminal group of the TPT are short-circuited around the entire circumference (guard frame method) and the above-mentioned rubbing is performed (Japanese Unexamined Patent Publication No. 61-12268, (Refer to Japanese Patent Publication No. 1983-59475).

〔解決しようとする課題〕[Problem to be solved]

しかしながら,この方法は,  COG (chtp 
onglass )型の液晶表示素子については,次の
問題がある。なお,ここにGOG型とは1上記TPTを
利用した上記LCDと,これらの各電極の端子群を集中
させたゲート用ランド部.ソース用ランド部とをガラス
基板上に設けたタイプの液晶表示素子をいう。このラン
ド部上には,液晶表示素子を作動制御するための駆動用
IC素子が搭載される。
However, this method uses COG (chtp
Onglass type liquid crystal display elements have the following problems. Note that the GOG type here refers to the above-mentioned LCD using the above-mentioned TPT, and a gate land portion in which the terminal groups of each of these electrodes are concentrated. Refers to a type of liquid crystal display element in which a source land portion is provided on a glass substrate. A driving IC element for controlling the operation of the liquid crystal display element is mounted on this land portion.

即ち,上記COG型の場合には,ICドライバーのTP
T基板へのレイアウト上の制約.例えば少なくとも3方
向のコ字状にICを配置させるような場合,上記のごと
く両端子群を全周で短絡するというガードフレーム法を
採ることができない。
That is, in the case of the above COG type, the TP of the IC driver
Layout constraints on T-board. For example, when ICs are arranged in a U-shape in at least three directions, it is not possible to adopt the guard frame method of short-circuiting both terminal groups around the entire circumference as described above.

また,該ガードフレーム法によらず.各TPT素子間を
同電位化する場合,例えばCOG用ランド部間を結線す
る方法がある。しかし,LCD加工後にレーザ等の手段
でこのランド部間を結線の切断しなければ,LCD検査
.IC搭載,IC動作検査等を行うことができない。ま
た,ランド部間の断線加工は大きな負担となり.生産性
が非常に低い。
Also, regardless of the guard frame method. In order to equalize the potential between the TPT elements, for example, there is a method of connecting the COG land portions. However, if the wiring is not cut between these lands using a means such as a laser after LCD processing, the LCD inspection will fail. It is not possible to carry out IC mounting, IC operation inspection, etc. Additionally, cutting wires between lands is a big burden. Productivity is very low.

本発明はかかる問題点に鑑み.静電気の帯電量を低減化
し,TPTの静電気破壊を生ずることのない.液晶表示
装置の製造方法を提供しようとするものである。
The present invention has been developed in view of these problems. Reduces the amount of static electricity and does not cause static damage to TPT. The present invention aims to provide a method for manufacturing a liquid crystal display device.

〔課題の解決手段〕[Means for solving problems]

本発明は,Fj膜トランジスタをマトリクス状に設けた
基板の上に,配向膜を載置し.該配向膜の表面をラビン
グ処理することによりその配向を行う.液晶表示装置の
製造方法において,上記ラビング処理は水蒸気雰囲気中
で行うことを特徴とする液晶表示装置の製造方法にある
In the present invention, an alignment film is placed on a substrate on which Fj film transistors are provided in a matrix. The alignment is performed by rubbing the surface of the alignment film. The method of manufacturing a liquid crystal display device is characterized in that the rubbing treatment is performed in a water vapor atmosphere.

上記水蒸気は,ラビング処理部分に.局所的に水蒸気を
吹き付けることなどにより形威する。即ち.ラビング処
理用ローラ等のラビング器具を用いて配向膜表面をラビ
ング処理する際に.このラビング処理器具と配向膜の接
触周辺部分に水茅気を吹き付ける。この水蒸気は,例え
ば加湿器及びパイプ等を用いて供給する。
The above water vapor is applied to the rubbed area. It takes effect by spraying water vapor locally. That is. When rubbing the alignment film surface using a rubbing device such as a rubbing roller. Water and air is sprayed around the contact area between the rubbing treatment tool and the alignment film. This water vapor is supplied using, for example, a humidifier and pipes.

また,水蒸気雰囲気は,湿度が70〜90%とすること
が好ましい。70%未満では静電気帯電量が高く.一方
90%を越えるとラビング処理布へ水蒸気の水滴が付着
し,パイルの「集まり現象」を生しラビング処理の安定
性に劣る。
Moreover, it is preferable that the humidity of the steam atmosphere is 70 to 90%. If it is less than 70%, the amount of static electricity is high. On the other hand, if it exceeds 90%, water vapor droplets will adhere to the rubbed cloth, causing a pile "gathering phenomenon" and resulting in poor stability of the rubbing treatment.

なお.70〜75%ではTPT耐圧のばらつき.湿度の
ばらつきにより,TPTが万一静電気破壊することが予
想されることと,上記パイルの「集まり現象」を考慮す
ると.最も好ましいのは,湿度75〜85%である. また.ラビング処理は.ラビング処理布を巻き付けたロ
ーラ等を用いて行う。ラビング処理布としてはレーヨン
,ナイロン.ポリエステルなどが用いられる, 上記配向膜は,基板上にマトリクス状に形威したTFT
の上に,印刷塗布.焼威されている。
In addition. At 70-75%, there is variation in TPT breakdown voltage. Considering that it is expected that TPT may be damaged by static electricity due to variations in humidity, and that the above-mentioned "clumping phenomenon" of piles occurs. The most preferable humidity is 75-85%. Also. The rubbing process. This is done using a roller wrapped around a rubbed cloth. Rayon and nylon are used as rubbing-treated cloth. The above-mentioned alignment film, which is made of polyester or the like, consists of TFTs formed in a matrix on a substrate.
Print coating on top. It's being incinerated.

なお,ラビング処理によって配向された配向膜上にはス
ペーサによって所定の間隔をおいて,上側の配向膜及び
基板が配置され,両配向膜の間に液晶材が注入され,液
晶表示装置とされる。
Note that an upper alignment film and a substrate are placed on the alignment film that has been oriented by the rubbing process at a predetermined distance using a spacer, and a liquid crystal material is injected between both alignment films to form a liquid crystal display device. .

また.本発明は,GOGタイプのみならず他のタイプの
液晶表示装置にも適用することができる.C作 用〕 本発明においては,ラビング処理は水蒸気雰囲気中にお
いて行っている。
Also. The present invention can be applied not only to the GOG type but also to other types of liquid crystal display devices. C Effect] In the present invention, the rubbing treatment is performed in a steam atmosphere.

そのため,ラビング処理付近は水蒸気によって高湿度環
境が形威され.静電気の帯電量を非常に少なくすること
ができる。例えば.水蒸気雰囲気の湿度が75〜85%
の場合には,ラビング処理において発生する帯電量は0
.02〜0.03KV程度でTPT耐圧の3分の1〜1
5分の1という低い値に低減することができる. したがって,本発明によれば.静電気帯電量を低減化し
,TPTの静電気破壊を生ずることのない.液晶表示装
置の製造方法を提供することができる。
As a result, water vapor creates a high humidity environment near the rubbing process. The amount of static electricity can be extremely reduced. for example. Humidity of water vapor atmosphere is 75-85%
In this case, the amount of charge generated in the rubbing process is 0.
.. Approximately 02 to 0.03 KV, 1/3 to 1/3 of TPT breakdown voltage
This can be reduced to as low as one-fifth. Therefore, according to the present invention. Reduces the amount of static electricity and does not cause static damage to TPT. A method for manufacturing a liquid crystal display device can be provided.

〔実施例〕〔Example〕

第1実施例 本発明の実施例にかかる,液晶表示装置の製造方法につ
き,第1図〜第3図を用いて説明する。
First Embodiment A method of manufacturing a liquid crystal display device according to an embodiment of the present invention will be explained with reference to FIGS. 1 to 3.

ラビング処理を行うに当たっては.第l図及び第2図に
示すごとく,可動テーブル2の上にTPT基板1を配置
する。また.該TPT基板1の上面の配向膜に接するよ
うにラビング処理用のローラ3を配する。また,ローラ
3とTFTMi1との接触周辺部分に,水蒸気4を噴霧
する。そして,可動テーブル2を左右に移動させながら
、ローラ3によりラビング処理を行う. 上記TPT基板1の断面図は.一般的に.第3図に示す
ごとく,ガラス基板11と,その上にマトリクス状に配
置されたTPTIOとよりなる.該TPTIOは,ゲー
ト線12と,その上に被覆したゲートvA縁膜13と.
その上に順次形威した,(a−Si)14,  Cn+
)15と.ソース線16,ドレイン17及び画素電極(
IT○)18とよりなる。上記n+は,a−Sil4と
ソース16及びドレインl7との間でオーQ7クコンタ
クトを取るためのものである。そして.これらの上に配
向膜が配置してあるl示略)。
When performing the rubbing process. As shown in FIGS. 1 and 2, the TPT substrate 1 is placed on the movable table 2. Also. A rubbing roller 3 is arranged so as to be in contact with the alignment film on the upper surface of the TPT substrate 1. Also, water vapor 4 is sprayed around the contact area between the roller 3 and the TFTMi1. Then, the rubbing process is performed by the rollers 3 while moving the movable table 2 from side to side. A cross-sectional view of the TPT substrate 1 above is. Typically. As shown in Fig. 3, it consists of a glass substrate 11 and TPTIOs arranged in a matrix on the glass substrate 11. The TPTIO includes a gate line 12, a gate vA rim 13 coated thereon, and .
On top of that, (a-Si)14, Cn+
)15 and. Source line 16, drain 17 and pixel electrode (
IT○)18 and more. The above n+ is for establishing an oak Q7 contact between the a-Sil4 and the source 16 and drain 17. and. An alignment film is placed on top of these (l illustration not shown).

上記配向膜は,ガラス基板11上にポリイミド樹脂液を
印刷し3焼或することにより形威した。
The above-mentioned alignment film was formed by printing a polyimide resin liquid on the glass substrate 11 and performing tri-baking.

そして,その後TPT基板lを洗浄し,ラビング処理に
付した。
Then, the TPT substrate 1 was cleaned and subjected to a rubbing treatment.

また.可動テーブル2は.その下面に回動輪を有し,シ
リンダ22により左右方向に移動可能に設けてある。一
方,ローラ3は.可動テーブル2うえのTFT基板lの
表面に接触できる位置にあり,またモータ31に連結し
てある。また,ローラ3の表面にはラビング布が巻いて
ある.また,ローラ3の近傍には.水蒸気の供給パイブ
4Iの噴霧口42を配設する。上記供給バイプ41は,
加湿器40に連結してある。供給バイブ41の途中には
,水溜防止用のドレインを設けた。
Also. Movable table 2 is. It has a rotating wheel on its lower surface, and is movable in the left and right direction by a cylinder 22. On the other hand, roller 3. It is located at a position where it can come into contact with the surface of the TFT substrate l on the movable table 2, and is also connected to the motor 31. Additionally, a rubbing cloth is wrapped around the surface of the roller 3. Also, near roller 3. A spray port 42 of a water vapor supply pipe 4I is provided. The supply pipe 41 is
It is connected to a humidifier 40. A drain is provided in the middle of the supply vibrator 41 to prevent water from accumulating.

次に,ラビング処理に際して,上記のごとく,可動テー
ブル2を左右に移動させる。これにより.これに載置し
たTPT基板1も左右移動する。
Next, during the rubbing process, the movable table 2 is moved left and right as described above. Due to this. The TPT substrate 1 placed thereon also moves left and right.

方.ローラ3は,第1図に矢印で示すごとく方向に回転
し,TFT基板1上の配向膜をラビング処理している。
direction. The roller 3 rotates in the direction shown by the arrow in FIG. 1, and rubs the alignment film on the TFT substrate 1.

それ故,ラビング処理はローラ3の一方向回転とTFT
基11の左右移動との相対移動により行われる. また.上記ラビング処理の間,水草気供給パイブ41の
噴霧口42からは,ローラ3と配向膜との接触周辺部に
,多量の水蒸気4が噴霧される.これにより.水蒸気雰
囲気が形成され.水蒸気雰囲気中でラビング処理が行わ
れる。本例では,該水蒸気雰囲気の湿度は75〜85%
とした。なお,上記ラビング処理は1回当たり約5秒,
水蒸気供給時間は可動テーブル移動中の約20秒であっ
た.ラビング処理後は,TPT基Fi1を可動テーブル
2より取り出し,液晶表示装置の組付けを行う。
Therefore, the rubbing process involves the unidirectional rotation of the roller 3 and the TFT.
This is done by moving relative to the left and right movement of base 11. Also. During the above-mentioned rubbing process, a large amount of water vapor 4 is sprayed from the spray port 42 of the aquatic weed supply pipe 41 around the contact area between the roller 3 and the alignment film. Due to this. A water vapor atmosphere is formed. Rubbing treatment is performed in a steam atmosphere. In this example, the humidity of the steam atmosphere is 75 to 85%.
And so. The above rubbing process takes approximately 5 seconds each time.
The water vapor supply time was approximately 20 seconds while the movable table was moving. After the rubbing process, the TPT base Fi1 is taken out from the movable table 2 and a liquid crystal display device is assembled.

なお,上記ラビング処理は,上記湿度保持のため.ロー
ラ3,供給パイブ41の開口部付近を箱体で囲んでおく
ことが好ましい。
Note that the above rubbing treatment is for the purpose of maintaining the above humidity. It is preferable to surround the openings of the roller 3 and the supply pipe 41 with a box.

上記のごとく.本例によれば,ラビング処理付近は水蒸
気によって高湿度環境が形威され,静電気の帯電量が非
常に少なくなる。そのため,ラビング処理時にTPTが
静電気破壊するおそれがない。
As above. According to this example, a high humidity environment is created by water vapor near the rubbing process, and the amount of static electricity is extremely small. Therefore, there is no risk of TPT being damaged by static electricity during the rubbing process.

第2実施例 上記第1実施例におけるラビング処理の際にラビング処
理付近の水草気湿度と静電気帯電量との関係を測定した
Second Example During the rubbing treatment in the first example, the relationship between the humidity of aquatic plants and the amount of electrostatic charge near the rubbing treatment was measured.

その結果を第1表に示す. 第I表 第1表より知られるごとく,湿度が高くなるに従って静
電気帯電量が低下していることが分かる.また.一般に
TPTは,静電気耐圧が0.1〜0.3KVであるため
,TPTの耐圧に応じて湿度が70%以上,より好まし
くは75%以上においてラビング処理を行うべきである
ことが分かる.なお.上例は,TPTの液晶表示装置素
子について示したが,他の液晶表示装置素子のラビング
処理にも適用することができる。
The results are shown in Table 1. As can be seen from Table I, the amount of electrostatic charge decreases as the humidity increases. Also. Generally, TPT has a static electricity withstand voltage of 0.1 to 0.3 KV, so it can be seen that the rubbing treatment should be performed at a humidity of 70% or more, more preferably 75% or more, depending on the TPT's withstand voltage. In addition. Although the above example was shown for a TPT liquid crystal display element, it can also be applied to rubbing treatment for other liquid crystal display elements.

また.本発明は,液晶表示装置の製造工程中における,
偏光板貼り付け工程にも応用することができる。この貼
付工程においては.偏光板とその保護シートとを剥離す
る際に.特に多くの静電気が発生する。
Also. The present invention provides the following advantages:
It can also be applied to the polarizing plate pasting process. In this pasting process. When peeling off the polarizing plate and its protective sheet. In particular, a lot of static electricity is generated.

それ故.この貼付工程においても,水草気雰囲気を用い
ることにより.静電気の発生を低減し,TPTの静電気
破壊を防止することができる。
Therefore. This pasting process also uses an aquatic plant atmosphere. It is possible to reduce the generation of static electricity and prevent static electricity damage to TPT.

【図面の簡単な説明】[Brief explanation of drawings]

第1図〜第3図は第1実施例におけるラビング処理時の
状態を示し,第1図はラビング処理装置の側面図,第2
図は第1図の平面図.第3図はTPT基板の断面図であ
る。 1. 1 0. 2. 3. 4. 40. TPT基板 TPT, 可動テーブル, ローラ, 水蒸気 加湿器, 3 第 1 図
Figures 1 to 3 show the state during the rubbing process in the first embodiment, and Figure 1 is a side view of the rubbing processing apparatus,
The figure is a plan view of Figure 1. FIG. 3 is a cross-sectional view of the TPT substrate. 1. 1 0. 2. 3. 4. 40. TPT substrate TPT, movable table, roller, steam humidifier, 3 Fig. 1

Claims (1)

【特許請求の範囲】 薄膜トランジスタをマトリクス状に設けた基板の上に、
配向膜を載置し、該配向膜の表面をラビング処理するこ
とによりその配向を行う、液晶表示装置の製造方法にお
いて、 上記ラビング処理は水蒸気雰囲気中で行うことを特徴と
する液晶表示装置の製造方法。
[Claims] On a substrate on which thin film transistors are provided in a matrix,
A method for manufacturing a liquid crystal display device, in which an alignment film is placed and the surface of the alignment film is subjected to a rubbing treatment to achieve alignment, wherein the rubbing treatment is performed in a water vapor atmosphere. Method.
JP2003863A 1990-01-10 1990-01-10 Production of liquid crystal display device Pending JPH03208019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003863A JPH03208019A (en) 1990-01-10 1990-01-10 Production of liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003863A JPH03208019A (en) 1990-01-10 1990-01-10 Production of liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH03208019A true JPH03208019A (en) 1991-09-11

Family

ID=11569038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003863A Pending JPH03208019A (en) 1990-01-10 1990-01-10 Production of liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH03208019A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05165030A (en) * 1991-12-18 1993-06-29 Semiconductor Energy Lab Co Ltd Method and device for rubbing
JP2012083600A (en) * 2010-10-13 2012-04-26 Nitto Denko Corp Continuous manufacturing method and continuous manufacturing system for liquid crystal display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05165030A (en) * 1991-12-18 1993-06-29 Semiconductor Energy Lab Co Ltd Method and device for rubbing
JP2012083600A (en) * 2010-10-13 2012-04-26 Nitto Denko Corp Continuous manufacturing method and continuous manufacturing system for liquid crystal display device
US8541250B2 (en) 2010-10-13 2013-09-24 Nitto Denko Corporation Method and system for continuously manufacturing liquid crystal display device

Similar Documents

Publication Publication Date Title
TWI432869B (en) Method of fabricating display device using plastic substrate
KR100928494B1 (en) LCD and its manufacturing method
KR101779586B1 (en) Method of fabricating display device using flexible plastic substrate
EP1883973B1 (en) Organic thin film transistor, active matrix display and fabrication method
JPWO2013176222A1 (en) Substrate processing apparatus and device manufacturing method
US6169592B1 (en) Photosensitive resin plate with polyimide pattern edge portion having greater hardness than polyimide pattern portion
JP2005141235A (en) Apparatus for forming orientation film and method for forming the same
KR20110043376A (en) Electrophoretic display device and method of fabricating the same
JPH03208019A (en) Production of liquid crystal display device
CN109765719A (en) The production method and substrate of substrate
JP3998755B2 (en) Semiconductor display device
JP2002365640A (en) Liquid crystal display device and manufacturing method therefor
JP4011717B2 (en) Substrate cleaning method, substrate cleaning apparatus, liquid crystal display device and manufacturing method thereof
US7764353B2 (en) Transfer system
WO2019075887A1 (en) Array substrate and display panel
CN106483716A (en) A kind of friction cloth processing equipment and friction orientation equipment
CN100462819C (en) Friction equipment and its application
JPH07181496A (en) Apparatus for producing liquid crystal display device
JP3470776B2 (en) Method for manufacturing liquid crystal display device
KR102010959B1 (en) Alignment layer patterning method and method of fabricating liquid crystal display device using the same
JP2850265B2 (en) Orientation treatment method
JPS61230119A (en) Manufacture of liquid crystal display device
CN208324216U (en) The machine of 3D printing nanometer model
JPH0784266A (en) Production of liquid crystal display element
CN208444134U (en) Transmitting device and developing apparatus