JPH03206709A - Power-on reset circuit - Google Patents

Power-on reset circuit

Info

Publication number
JPH03206709A
JPH03206709A JP185090A JP185090A JPH03206709A JP H03206709 A JPH03206709 A JP H03206709A JP 185090 A JP185090 A JP 185090A JP 185090 A JP185090 A JP 185090A JP H03206709 A JPH03206709 A JP H03206709A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
power
tr
channel mos
voltage
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP185090A
Inventor
Akira Yugawa
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To attain sure power-on reset independently of the time constant of a power supply and a power voltage by providing a transistor(TR) pair, a constant current source, a resistor, a capacitor, a reference voltage generating circuit, a TR and an inverting amplifier.
CONSTITUTION: The circuit consists of P-channel MOS TR pairs l,2,N-channel MOS TR pairs 3, 4, a constant current source 5, a resistor 10, a capacitor 11, a reference voltage generating circuit 7, a P-channel MOS TR 6 and inverting amplifiers 8, 9. Thus, a reset signal is generated surely independently of the rise time constant of a power voltage and even when the power voltage is decreased to a voltage near the operating limit of a semiconductor integrated circuit, a reset signal is surely generated.
COPYRIGHT: (C)1991,JPO&Japio
JP185090A 1990-01-08 1990-01-08 Power-on reset circuit Pending JPH03206709A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP185090A JPH03206709A (en) 1990-01-08 1990-01-08 Power-on reset circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP185090A JPH03206709A (en) 1990-01-08 1990-01-08 Power-on reset circuit

Publications (1)

Publication Number Publication Date
JPH03206709A true true JPH03206709A (en) 1991-09-10

Family

ID=11513029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP185090A Pending JPH03206709A (en) 1990-01-08 1990-01-08 Power-on reset circuit

Country Status (1)

Country Link
JP (1) JPH03206709A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331209A (en) * 1992-02-28 1994-07-19 Oki Electric Industry Co., Ltd. Auto-reset circuit with improved testability
US5581206A (en) * 1995-07-28 1996-12-03 Micron Quantum Devices, Inc. Power level detection circuit
US5627784A (en) * 1995-07-28 1997-05-06 Micron Quantum Devices, Inc. Memory system having non-volatile data storage structure for memory control parameters and method
US5686848A (en) * 1996-04-29 1997-11-11 Mosaid Technologies Inc. Power-up/power-down reset circuit for low voltage interval
US5793775A (en) * 1996-01-26 1998-08-11 Micron Quantum Devices, Inc. Low voltage test mode operation enable scheme with hardware safeguard
US5801985A (en) * 1995-07-28 1998-09-01 Micron Technology, Inc. Memory system having programmable control parameters
US6141247A (en) * 1997-10-24 2000-10-31 Micron Technology, Inc. Non-volatile data storage unit and method of controlling same
JP2011124560A (en) * 2009-11-13 2011-06-23 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331209A (en) * 1992-02-28 1994-07-19 Oki Electric Industry Co., Ltd. Auto-reset circuit with improved testability
US6229352B1 (en) 1995-07-28 2001-05-08 Micron Technology, Inc. Power level detection circuit
US5581206A (en) * 1995-07-28 1996-12-03 Micron Quantum Devices, Inc. Power level detection circuit
US6272586B1 (en) * 1995-07-28 2001-08-07 Micron Technology, Inc. Memory system having programmable control parameters
US5767711A (en) * 1995-07-28 1998-06-16 Micron Quantum Devices, Inc. Level detection circuit and method
US5801985A (en) * 1995-07-28 1998-09-01 Micron Technology, Inc. Memory system having programmable control parameters
US5627784A (en) * 1995-07-28 1997-05-06 Micron Quantum Devices, Inc. Memory system having non-volatile data storage structure for memory control parameters and method
US6046615A (en) * 1995-07-28 2000-04-04 Micron Technology, Inc. Level detection circuit
US5793775A (en) * 1996-01-26 1998-08-11 Micron Quantum Devices, Inc. Low voltage test mode operation enable scheme with hardware safeguard
US5825700A (en) * 1996-01-26 1998-10-20 Micron Technology, Inc. Low voltage test mode operation enable scheme with hardware safeguard
US6028798A (en) * 1996-01-26 2000-02-22 Micron Technology, Inc. Low voltage test mode operation enable scheme with hardware safeguard
US5686848A (en) * 1996-04-29 1997-11-11 Mosaid Technologies Inc. Power-up/power-down reset circuit for low voltage interval
US6141247A (en) * 1997-10-24 2000-10-31 Micron Technology, Inc. Non-volatile data storage unit and method of controlling same
JP2011124560A (en) * 2009-11-13 2011-06-23 Semiconductor Energy Lab Co Ltd Semiconductor device
KR20120093339A (en) * 2009-11-13 2012-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8947153B2 (en) 2009-11-13 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit comprising thin-film transistors

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