JPH03205684A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPH03205684A
JPH03205684A JP2000682A JP68290A JPH03205684A JP H03205684 A JPH03205684 A JP H03205684A JP 2000682 A JP2000682 A JP 2000682A JP 68290 A JP68290 A JP 68290A JP H03205684 A JPH03205684 A JP H03205684A
Authority
JP
Japan
Prior art keywords
rt
namely
number
sq
practically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000682A
Inventor
Akira Endo
Ryoichi Hori
Kazuhiko Kajitani
Tetsuo Matsumoto
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000682A priority Critical patent/JPH03205684A/en
Publication of JPH03205684A publication Critical patent/JPH03205684A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE:To reduce the power consumption without increasing the busy rate by specifying the number of unit amplifying circuits of a sense amplifier which practically have the n-bit storage capacity and are simultaneously activated in the normal access cycle and the refresh cycle. CONSTITUTION:A device fundamentally has the n-bit storage capacity, and row addresses R0 to Rsq. rt. n-1 whose number ra is >=sq. rt. n, namely, 4096, and one word line, namely, 1/ra word lines corresponding to the practically designated row address Ri are set to the selected state in the alternative way, and one pair of complementary bit lines corresponding to a designated column address Cj are set to the selected state in the alternative way. Consequently, a number sa of unit amplifying circuits of the sense amplifier which are activated in each access cycle is <=sq. rt. n, namely, 4096, and it is a half in comparison with a normal dynamic RAM. Thus, the busy rate is suppressed and the power consumption is reduced.
JP2000682A 1990-01-08 1990-01-08 Semiconductor storage device Pending JPH03205684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000682A JPH03205684A (en) 1990-01-08 1990-01-08 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000682A JPH03205684A (en) 1990-01-08 1990-01-08 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPH03205684A true JPH03205684A (en) 1991-09-09

Family

ID=11480531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000682A Pending JPH03205684A (en) 1990-01-08 1990-01-08 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPH03205684A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012069231A (en) * 2010-08-26 2012-04-05 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012069231A (en) * 2010-08-26 2012-04-05 Semiconductor Energy Lab Co Ltd Semiconductor device

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