JPH03203378A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPH03203378A
JPH03203378A JP34285889A JP34285889A JPH03203378A JP H03203378 A JPH03203378 A JP H03203378A JP 34285889 A JP34285889 A JP 34285889A JP 34285889 A JP34285889 A JP 34285889A JP H03203378 A JPH03203378 A JP H03203378A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
formed
thickness
region
si
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP34285889A
Other versions
JP2629995B2 (en )
Inventor
Noriaki Kodama
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation

Links

Abstract

PURPOSE: To restrain hot carrier effect of bias stress, realize high reliability, and reduce irregularity of characteristics, by making the thickness of a polycrystalline silicon film constituting a channel region 10-40nm.
CONSTITUTION: On an Si substrate 1, a field oxide film 2 is formed, and thereon a polycrystalline Si film 3 of 10-40nm in thickness is formed. By thermal oxidation, an Si oxide film 4 is formed on the film 3, and the thickness of the film 3 is reduced. The whole part of the film 4 is etched and eliminated, and an element forming region is defined by patterning the film 3. By thermally oxidizing the film 3 surface, a gate oxide film 5 is formed. A gate electrode 6 is selectively formed on the film 5; the electrode 6 is used as a mask, and P-type impurity ions are introduced, thereby forming a source.drain region 7. An interlayer insulating film 8 is deposited on the surface; an extraction electrode 9 connected with the region 7 is formed by selectively forming an aperture; thus a thin film transistor is constituted.
COPYRIGHT: (C)1991,JPO&Japio
JP34285889A 1989-12-29 1989-12-29 Thin film transistor Expired - Lifetime JP2629995B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34285889A JP2629995B2 (en) 1989-12-29 1989-12-29 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34285889A JP2629995B2 (en) 1989-12-29 1989-12-29 Thin film transistor

Publications (2)

Publication Number Publication Date
JPH03203378A true true JPH03203378A (en) 1991-09-05
JP2629995B2 JP2629995B2 (en) 1997-07-16

Family

ID=18357040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34285889A Expired - Lifetime JP2629995B2 (en) 1989-12-29 1989-12-29 Thin film transistor

Country Status (1)

Country Link
JP (1) JP2629995B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04301623A (en) * 1991-03-29 1992-10-26 Sharp Corp Production of thin-film transistor
JPH0766424A (en) * 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
JP2007173788A (en) * 2005-11-23 2007-07-05 Semiconductor Energy Lab Co Ltd Manufacturing method of semiconductor element and semiconductor element
WO2009123127A1 (en) * 2008-04-02 2009-10-08 Nec液晶テクノロジー株式会社 Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138129A (en) * 1981-02-19 1982-08-26 Matsushita Electric Ind Co Ltd Manufacture of amorphous thin-film
JPS60136262A (en) * 1983-12-23 1985-07-19 Sony Corp Field effect transistor
JPS60245124A (en) * 1984-05-18 1985-12-04 Sony Corp Manufacture of semiconductor device
JPS6342113A (en) * 1986-08-08 1988-02-23 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin film type silicon semiconductor device
JPS63299109A (en) * 1987-05-29 1988-12-06 Hitachi Ltd Formation of crystalline thin film
JPH01136373A (en) * 1987-11-24 1989-05-29 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin-film semiconductor device
JPH01268064A (en) * 1988-04-20 1989-10-25 Hitachi Ltd Formation of polycrystalline silicon thin film

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138129A (en) * 1981-02-19 1982-08-26 Matsushita Electric Ind Co Ltd Manufacture of amorphous thin-film
JPS60136262A (en) * 1983-12-23 1985-07-19 Sony Corp Field effect transistor
JPS60245124A (en) * 1984-05-18 1985-12-04 Sony Corp Manufacture of semiconductor device
JPS6342113A (en) * 1986-08-08 1988-02-23 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin film type silicon semiconductor device
JPS63299109A (en) * 1987-05-29 1988-12-06 Hitachi Ltd Formation of crystalline thin film
JPH01136373A (en) * 1987-11-24 1989-05-29 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin-film semiconductor device
JPH01268064A (en) * 1988-04-20 1989-10-25 Hitachi Ltd Formation of polycrystalline silicon thin film

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04301623A (en) * 1991-03-29 1992-10-26 Sharp Corp Production of thin-film transistor
US6569724B2 (en) 1992-03-25 2003-05-27 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and method for forming the same
US6887746B2 (en) 1992-03-25 2005-05-03 Semiconductor Energy Lab Insulated gate field effect transistor and method for forming the same
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6437366B1 (en) 1993-08-12 2002-08-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6841432B1 (en) 1993-08-20 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US6010924A (en) * 1993-08-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating a thin film transistor
JPH0766424A (en) * 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
US7585715B2 (en) 1993-08-20 2009-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US7354811B2 (en) 1993-08-20 2008-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
JP2007173788A (en) * 2005-11-23 2007-07-05 Semiconductor Energy Lab Co Ltd Manufacturing method of semiconductor element and semiconductor element
WO2009123127A1 (en) * 2008-04-02 2009-10-08 Nec液晶テクノロジー株式会社 Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus
US8570455B2 (en) 2008-04-02 2013-10-29 Nlt Technologies, Ltd. Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus
JP5440878B2 (en) * 2008-04-02 2014-03-12 Nltテクノロジー株式会社 Semiconductor device and manufacturing method thereof and a liquid crystal display device and an electronic apparatus,

Also Published As

Publication number Publication date Type
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