JPH03181802A - Scanning tunneling microscope - Google Patents
Scanning tunneling microscopeInfo
- Publication number
- JPH03181802A JPH03181802A JP32294189A JP32294189A JPH03181802A JP H03181802 A JPH03181802 A JP H03181802A JP 32294189 A JP32294189 A JP 32294189A JP 32294189 A JP32294189 A JP 32294189A JP H03181802 A JPH03181802 A JP H03181802A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- tunnel
- temperature
- probe
- tunneling microscope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005641 tunneling Effects 0.000 title claims abstract description 39
- 239000000523 sample Substances 0.000 claims abstract description 106
- 239000007788 liquid Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 17
- 238000001514 detection method Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000007747 plating Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000004574 scanning tunneling microscopy Methods 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- HWLDNSXPUQTBOD-UHFFFAOYSA-N platinum-iridium alloy Chemical compound [Ir].[Pt] HWLDNSXPUQTBOD-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、走査型トンネル顕微鏡に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a scanning tunneling microscope.
本発明は、試料表面の温度を制御する手段を持つ走査型
トンネル顕微鏡であり、試料は大気中、液体中、電解質
水溶液中のいずれの場合を含む。The present invention is a scanning tunneling microscope having means for controlling the temperature of the sample surface, and the sample may be in the air, in a liquid, or in an aqueous electrolyte solution.
さらに、ＸＹステージによって試料表面をミリメートル
オーダで移動する手段を有する場合をも含む。この際、
雰囲気としては大気の他に、不活性ガス（Ｎｔガスなど
）の場合を含む、温度制御手段によって、液晶の相変化
などの物質の温度による変化、又はメツキやエンチング
の析出溶解反応の温度に対する変化を、トンネル顕微鏡
の移動観察により評価可能にするものである。Furthermore, it also includes a case in which a means for moving the sample surface on the order of millimeters by an XY stage is provided. On this occasion,
In addition to the atmosphere, the atmosphere may include inert gas (Nt gas, etc.). Temperature control means may be used to control changes due to temperature of substances such as phase changes of liquid crystals, or changes due to temperature of precipitation and dissolution reactions such as plating and etching. can be evaluated by moving observation using a tunneling microscope.
試料をトンネル探針間に電圧を印加し、トンネル電流を
検出する方法は一般的であり、さらに検出したトンネル
電流により試料の表面像として表わす手段としては、走
査型トンネル顕微鏡として知られている。この走査型ト
ンネル顕微鏡に関しては、例えば、米国特許４３４３９
９３号 明細書等において周知であり、超高真空下での
測定が行われてきたが、最近では大気中、溶液中での測
定も可能となっている。A common method is to apply a voltage to a sample between tunneling probes and detect a tunneling current, and a scanning tunneling microscope is known as a means for expressing the detected tunneling current as a surface image of the sample. Regarding this scanning tunneling microscope, for example, US Pat.
No. 93 is well known in the specifications, etc., and measurements have been performed under ultra-high vacuum, but recently it has also become possible to measure in the atmosphere or in a solution.
しかし、試料温度を制御し、走査型トンネル顕微鏡測定
を行う方法は、困難であった。さらに、室温より高い温
度でのメツキ、エツチングの動的観察を行える走査型ト
ンネルＤ微鏡測定方法は、確立されていなかった。However, it has been difficult to control the sample temperature and perform scanning tunneling microscopy measurements. Furthermore, a scanning tunnel D microscopic measurement method that allows dynamic observation of plating and etching at temperatures higher than room temperature has not been established.
上記問題点を解決するために、本発明においては、試料
表面温度を制御する手段を有する走査型トンネル顕微鏡
を構成し、大気中の試料表面又は、液体中の試料表面の
温度をＨａした状態で走査型トンネル顕微鏡測定を行う
ことにした。In order to solve the above-mentioned problems, in the present invention, a scanning tunneling microscope is constructed which has a means for controlling the sample surface temperature, and the temperature of the sample surface in the atmosphere or in the liquid is maintained at Ha. We decided to perform scanning tunneling microscopy measurements.
このような構成により、試料表面の温度を制御ｍし、液
晶の相変化等の連続測定及びメツキやエツチングの核成
長等の動的観察が可能となった。With this configuration, it is possible to control the temperature of the sample surface and to continuously measure liquid crystal phase changes, etc., and dynamically observe plating, etching nucleus growth, etc.
以下に、本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.
実施例−１
第１図は、大気中走査型トンネル顕微鏡の概略図である
。試料２をヒータ７で加熱し、温度センサ８を試料温度
検出・制御部１３で試料温度を検知し制御する。トンネ
ル探計１は、微動機＃Ｉ制御部１２でトンネル領域まで
試料に接近させ、試料／探針間電圧制御・トンネル電流
検出部２３で、試料とトンネル探針間に電圧をかけトン
ネル電流を検出する。トンネルを流検出部２３からは、
微動機構制御部１２ヘトンネル電流信号が出力され、ト
ンネル探針１と試料２との距離をトンネル電流が一定と
なるよう微動機構制御部１２で制御する。またトンネル
電流検出部２３からのトンネル電流信号と微動機構制御
部１２からの制御ｌ信号は、トンネル顕微鏡画像化処理
部１５で、データ処理され、トンネル顕微鏡像となる０
以上の構成により、温度制御下の大気中走査型トンネル
顕微鏡像を得ることができた。Example-1 FIG. 1 is a schematic diagram of an atmospheric scanning tunneling microscope. The sample 2 is heated by the heater 7, and the temperature sensor 8 is detected and controlled by the sample temperature detection/control section 13. In the tunnel probe 1, the fine mover #I controller 12 approaches the sample to the tunnel region, and the sample/probe voltage control/tunnel current detector 23 applies voltage between the sample and the tunnel probe to generate a tunnel current. To detect. From the tunnel flow detection unit 23,
A tunnel current signal is output to the fine movement mechanism control section 12, and the fine movement mechanism control section 12 controls the distance between the tunnel probe 1 and the sample 2 so that the tunnel current is constant. Further, the tunnel current signal from the tunnel current detection section 23 and the control l signal from the fine movement mechanism control section 12 are data-processed in the tunneling microscope image processing section 15, and are converted into a tunneling microscope image.
With the above configuration, it was possible to obtain atmospheric scanning tunneling microscope images under temperature control.
この装置では、例えば、液晶の温度による相転移の状況
が、液晶分子レベルで観察でき、液晶分子配列の欠陥の
発生機構の解明等に用いることができる。また固体の溶
解現象が原子、分子レベルで観察でき、溶解現象のミク
ロレベルの扱いが可能である。With this device, for example, the state of phase transition due to temperature of liquid crystal can be observed at the level of liquid crystal molecules, and can be used to elucidate the mechanism of occurrence of defects in the alignment of liquid crystal molecules. In addition, dissolution phenomena in solids can be observed at the atomic and molecular level, making it possible to treat dissolution phenomena at the micro level.
実施例−２ 第２図は、液中走査型トンネル顕微鏡の概略図である。Example-2 FIG. 2 is a schematic diagram of a submerged scanning tunneling microscope.
セル５中に、トンネル探針１と試料２を配置し、溶液６
を満たす、この場合の溶液は、土に絶縁性の液体を用い
る。セルの下にヒータ７を配置し、温度センサ８と試料
温度検出・制御部１３で試料の温度を検出し制御を行う
、トンネル探針は実施例】と同様に制御して、液中で温
度制御下の試料の走査型トンネル顕微鏡像を得ることが
できた。Tunnel probe 1 and sample 2 are placed in cell 5, and solution 6
The solution in this case is to fill the soil with an insulating liquid. A heater 7 is placed under the cell, and the temperature of the sample is detected and controlled by the temperature sensor 8 and the sample temperature detection/control unit 13.The tunnel probe is controlled in the same manner as in Example] to adjust the temperature in the liquid. Scanning tunneling microscopy images of the sample under control could be obtained.
この例の装置では、例えば、溶液として油等を用いて、
大気と遮断した状態で金属合金等の酸化しやすい物質の
表面の温度による相変化を、原子レベルで扱うことがで
きる。In the device of this example, for example, using oil etc. as a solution,
It is possible to handle temperature-induced phase changes on the surface of materials that are easily oxidized, such as metal alloys, at the atomic level when isolated from the atmosphere.
実施例−３
第３図は、電解液中走査型トンネルｗ４徽鏡の概略図で
ある。テフロンまたはガラス製の電気化学セル５中に、
トンネル探針ｌ、試料２．参照電極３、対極４．温度セ
ンサ８を設置し、電解液６を満たす。この際、トンネル
探針は、テフロンまたはガラスでコーティングし、先端
部のみを露出した白金または白金イリジウムの細線（１
０ミクロン径〉を用いた。探針は、この他に、電解研摩
し先端部のみを細くした白金（または白金イリジウム）
のワイヤも用いることを含む。参照電極は、ＳＣＥ （
飽和カロメル電極）またはＡ ｇ ／ Ａ ｇ Ｃｌ電
極を用いた。対極には、白金ワイヤまたは白金板を用い
た。温度センサとしては、白金抵抗温度センサまたはサ
ーミスタを、ガラス封入したものを用いた。電気化学セ
ル５の下にヒータ７を設置し、除震台９の上に置く、ヒ
ータは抵抗加熱型またはペルチェ素子を用いた。温度セ
ンサによって塩度を検知し、試料温度検出・制御部１３
で、ヒータの加熱量を制御し、試料２の表面温度を制御
した。トンネル探針ｌおよび試料２．参照電極３゜対極
４は、試料とトンネル探針電位制御部・試料電流検出部
１０に接続され、トンネル探針１と試料２の電位制御を
行う。この「試料とトンネル探針電位制御部・試料電流
検出部１０Ｊは、試料電位・試料電流記録部１４に接続
され、電流−電位曲線（サイクリックボルタモダラム）
等の電気化学測定結果を記録する。一方、トンネル探針
１は、トンネル電流検出部１１に接続され、トンネル電
流を記録する。実施例１と同様にトンネル探針の微動は
微動機構制ｉｎ部１２によって制御し、制御信号は、ト
ンネルｗ４微ｍ画像化処理部１５によって画像化する。Example 3 FIG. 3 is a schematic diagram of a scanning tunnel W4 mirror in an electrolytic solution. In an electrochemical cell 5 made of Teflon or glass,
Tunnel probe 1, sample 2. Reference electrode 3, counter electrode 4. A temperature sensor 8 is installed and the electrolyte 6 is filled. At this time, the tunnel probe is coated with Teflon or glass, with only the tip exposed.
0 micron diameter> was used. In addition to this, the probe is made of platinum (or platinum iridium) that has been electropolished to make only the tip thinner.
This also includes the use of wires. The reference electrode was SCE (
A saturated calomel electrode) or an A g /A g Cl electrode was used. A platinum wire or platinum plate was used as the counter electrode. As the temperature sensor, a platinum resistance temperature sensor or a thermistor sealed in glass was used. A heater 7 was installed under the electrochemical cell 5 and placed on a vibration isolation table 9. The heater used was a resistance heating type or a Peltier element. The temperature sensor detects the salinity, and the sample temperature detection/control unit 13
The surface temperature of sample 2 was controlled by controlling the heating amount of the heater. Tunnel probe 1 and sample 2. The reference electrode 3 and the counter electrode 4 are connected to the sample and tunnel probe potential control section/sample current detection section 10 to control the potentials of the tunnel probe 1 and the sample 2. This "sample and tunnel probe potential control section/sample current detection section 10J is connected to the sample potential/sample current recording section 14, and the current-potential curve (cyclic voltamodrum) is
Record the electrochemical measurement results such as On the other hand, the tunnel probe 1 is connected to a tunnel current detection section 11 and records the tunnel current. As in the first embodiment, the fine movement of the tunnel probe is controlled by the fine movement mechanism control unit 12, and the control signal is converted into an image by the tunnel w4 fine m imaging processing unit 15.
以上の構成により、温度制御下の電解液中走査型トンネ
ル顕微鏡像を得ることができた。With the above configuration, it was possible to obtain a scanning tunneling microscope image in an electrolyte under temperature control.
この例の装置では、例えば、温度によるメツキ層の成長
状況や構造を原子レベルで観察でき、メツキ層の分析の
ち役立てることができる。With the apparatus of this example, for example, the growth status and structure of the plating layer due to temperature can be observed at the atomic level, which can be useful after analyzing the plating layer.
実施例−４
第４図は、ＸＹステージ付定走査型トンネル顕微鏡概略
図である。ＸＹＹステージ２Ｘ）の上にヒータ７と試料
２を配置した構成になっている。Example 4 FIG. 4 is a schematic diagram of a constant scanning tunneling microscope with an XY stage. The heater 7 and the sample 2 are arranged on an XYY stage 2X).
この場合も、温度制御下の走査型トンネルＲ微鏡像が得
られた。In this case as well, a scanning tunnel R microscopic image under temperature control was obtained.
実施例−５
第５図は、本発明の恒温セルを有する液中走査型トンネ
ル顕微鏡の概略図である。電気化学セル５を恒温セルＩ
６に入れ、この恒温セル１６中に温水１７を通し温度制
御を行う、温水１７は、恒温槽１８により、一定温度に
保たれ、恒温セル１６内を循環する。このような構成に
より、温度制御下の液中走査型トンネル顕微鏡像を得る
ことができた。Example 5 FIG. 5 is a schematic diagram of a submerged scanning tunneling microscope having a constant temperature cell of the present invention. Electrochemical cell 5 is thermostatic cell I
6 and temperature control is performed by passing hot water 17 through this constant temperature cell 16. The hot water 17 is kept at a constant temperature by a constant temperature bath 18 and circulates within the constant temperature cell 16. With this configuration, it was possible to obtain images using a submerged scanning tunneling microscope under temperature control.
実施例−６
第６図は、本発明の赤外線ヒータを有する液中走査型ト
ンネルｗ４徽鏡の概略図である。赤外線ヒータ１９を用
いて、試料２の表面温度を制御する。Example 6 FIG. 6 is a schematic diagram of a submerged scanning tunnel W4 mirror having an infrared heater according to the present invention. The surface temperature of the sample 2 is controlled using the infrared heater 19.
この場合も、温度制御下の液中走査型トンネル顕微鏡像
を得ることができた。In this case as well, we were able to obtain images using a submerged scanning tunneling microscope under temperature control.
実施例−７
第７図は、本発明の水浸ヒータ２０を有する液中走査型
トンネル顕微鏡の概略図である。溶液６の中に、水浸可
能なヒータ２０を設置し、溶液６を加熱し、試料２の表
面温度を制御する。この場合も、温度制御下の液中走査
型トンネル顕微鏡像を得ることができた。Example 7 FIG. 7 is a schematic diagram of a submerged scanning tunneling microscope having a water immersion heater 20 of the present invention. A heater 20 that can be immersed in water is installed in the solution 6 to heat the solution 6 and control the surface temperature of the sample 2. In this case as well, we were able to obtain images using a submerged scanning tunneling microscope under temperature control.
実施例−８
第８図は、本発明の赤外線温度センサ８を有する液中走
査型トンネル顕微鏡の概略図である。赤外線温度センサ
２１を用いて、試料２の表面温度を検出する。この場合
も、温度制御下の液中走査型トンネル顕微鏡像を得るこ
とができた。Example 8 FIG. 8 is a schematic diagram of a submerged scanning tunneling microscope having an infrared temperature sensor 8 of the present invention. The surface temperature of the sample 2 is detected using the infrared temperature sensor 21. In this case as well, we were able to obtain images using a submerged scanning tunneling microscope under temperature control.
実施例−９
第９図は、本発明のマイクロ波ヒータを有する液中走査
型トンネル顕微鏡の概略図である。マイクロ波ヒータ２
２により、試料２の表面温度を制御する。この場合も、
温度制御下の液中走査型トンネル顕ｍ鏡像が得られた。Example 9 FIG. 9 is a schematic diagram of a submerged scanning tunneling microscope having a microwave heater of the present invention. Microwave heater 2
2 controls the surface temperature of the sample 2. In this case too,
A submerged scanning tunneling microscope image was obtained under temperature control.
本発明により、温度制御下での試料の走査型トンネル顕
微鏡測定が可能となった。さらに試料表面の温度下での
、メツキやエンチングの核成長等の動的観察が可能とな
った。The present invention enables scanning tunneling microscopy measurements of samples under temperature control. Furthermore, it has become possible to dynamically observe the growth of plating and etching nuclei under the temperature of the sample surface.
第１図は本発明の実施例の大気中走査型トンネル顕微鏡
の概略図、第２図は液中走査型トンネル顕微鏡の概略図
、第３図は電解液中走査型トンネル顕微鏡の概略図、第
４図はｘｙステージ付き液中走査型トンネルｗ４ｆｉ鏡
の概略図、第５図は恒温セルを有する液中走査型トンネ
ルＳ９ｉ微鏡の概略図、第６図は赤外線ヒータを有する
液中走査型トンネル顕微鏡の概略図、第７図、第８図、
第９図は水浸ヒータ、赤外線温度センサ、マイクロ波ヒ
ータをそれぞれ有する液中走査型トンネル顕微鏡の概略
図である。
・・トンネル探針
・・試料
・・ヒータ
・・温度センサ
・・恒温セル
・・温水
１８・
１９・
２０・
２１・
２２・
・恒温槽
・赤外線ヒータ
・水浸し−タ
・赤外線温度センサ
・マイクロ波ヒータFIG. 1 is a schematic diagram of an atmospheric scanning tunneling microscope according to an embodiment of the present invention, FIG. 2 is a schematic diagram of a liquid-submerged scanning tunneling microscope, and FIG. 3 is a schematic diagram of an electrolyte-submerged scanning tunneling microscope. Figure 4 is a schematic diagram of a submerged scanning tunnel w4fi mirror with an xy stage, Figure 5 is a schematic diagram of a submerged scanning tunnel S9i microscope with a constant temperature cell, and Figure 6 is a schematic diagram of a submerged scanning tunnel with an infrared heater. Schematic diagram of the microscope, Figures 7 and 8,
FIG. 9 is a schematic diagram of a submerged scanning tunneling microscope having a water immersion heater, an infrared temperature sensor, and a microwave heater.・・Tunnel probe・・Sample・・Heater・・Temperature sensor・・Thermostat cell・Hot water 18, 19, 20, 21, 22・・Thermostatic chamber・Infrared heater・Water immersion・Infrared temperature sensor・Microwave heater
Claims (6)
試料とトンネル探針間に流れるトンネル電流を検出する
手段と、トンネル探針を試料に接近させる手段と、トン
ネル探針を試料面に対し平行に２次元移動させる手段と
、試料表面の温度を制御する手段により構成される走査
型トンネル顕微鏡。(1) means for setting the voltage between the sample and the tunnel probe;
A means for detecting the tunnel current flowing between the sample and the tunnel probe, a means for bringing the tunnel probe closer to the sample, a means for moving the tunnel probe two-dimensionally parallel to the sample surface, and controlling the temperature of the sample surface. A scanning tunneling microscope consisting of means for
試料とトンネル探針間の電圧を設定する手段と、試料と
トンネル探針間に流れるトンネル電流を検出する手段と
、トンネル探針を試料に接近させる手段と、トンネル探
針を試料面に対し平行に２次元移動させる手段と、試料
表面の温度を制御する手段により構成される走査型トン
ネル顕微鏡。(2) A cell in which a sample and a tunnel probe are placed in a liquid,
means for setting a voltage between the sample and the tunnel probe, means for detecting a tunnel current flowing between the sample and the tunnel probe, means for bringing the tunnel probe close to the sample, and means for moving the tunnel probe parallel to the sample surface. A scanning tunneling microscope consists of means for two-dimensional movement and means for controlling the temperature of the sample surface.
に配置した電気化学セルと、試料及びトンネ探針の電位
を設定する手段と、試料と対極とに流れる電流を検出す
る手段と、試料とトンネル探針との間に流れるトンネル
電流を検出する手段と、トンネル探針を試料に接近させ
る手段と、トンネル探針を試料面に対し平行に２次元移
動させる手段と、試料表面の温度を制御する手段により
構成される走査型トンネル顕微鏡。(3) an electrochemical cell in which a sample, a counter electrode, a reference electrode, and a tunnel probe are placed in a solution; a means for setting the potentials of the sample and the tunnel probe; and a means for detecting the current flowing through the sample and the counter electrode; A means for detecting a tunnel current flowing between a sample and a tunnel probe, a means for bringing the tunnel probe closer to the sample, a means for moving the tunnel probe two-dimensionally in parallel to the sample surface, and a means for detecting the temperature of the sample surface. A scanning tunneling microscope consisting of means for controlling.
せる手段が、ＸＹステージであることを特徴とする第１
項記載の走査型トンネル顕微鏡。(4) A first method characterized in that the means for two-dimensionally moving the tunnel probe parallel to the sample surface is an XY stage.
Scanning tunneling microscope as described in section.
せる手段が、ＸＹステージであることを特徴とする第２
項記載の走査型トンネル顕微鏡。(5) A second device characterized in that the means for two-dimensionally moving the tunnel probe parallel to the sample surface is an XY stage.
Scanning tunneling microscope as described in section.
せる手段が、ＸＹステージであることを特徴とする第３
項記載の走査型トンネル顕微鏡。(6) A third feature in which the means for two-dimensionally moving the tunnel probe parallel to the sample surface is an XY stage.
Scanning tunneling microscope as described in section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1322941A JP2835530B2 (en) | 1989-12-12 | 1989-12-12 | Scanning tunnel microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1322941A JP2835530B2 (en) | 1989-12-12 | 1989-12-12 | Scanning tunnel microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03181802A true JPH03181802A (en) | 1991-08-07 |
| JP2835530B2 JP2835530B2 (en) | 1998-12-14 |
Family
ID=18149346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1322941A Expired - Fee Related JP2835530B2 (en) | 1989-12-12 | 1989-12-12 | Scanning tunnel microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2835530B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008516207A (en) * | 2004-10-07 | 2008-05-15 | エヌアンビション・ゲーエムベーハー | Apparatus and method for scanning probe microscopy |
| WO2014006734A1 (en) * | 2012-07-06 | 2014-01-09 | 株式会社日立製作所 | Force probe microscope and height distribution measurement method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59112415A (en) * | 1982-12-16 | 1984-06-28 | Comput Basic Mach Technol Res Assoc | Thin film magnetic head |
| JPS6151556A (en) * | 1984-08-21 | 1986-03-14 | Hitachi Ltd | Electrolyte analysis instrument |
| JPH01141302A (en) * | 1987-11-27 | 1989-06-02 | Seiko Instr & Electron Ltd | Method and device for executing simultaneously electrochemical measurement and tunnel current measurement |
| JPH01199218A (en) * | 1988-02-03 | 1989-08-10 | Shimadzu Corp | Sample temperature controller for analyzing device |
-
1989
- 1989-12-12 JP JP1322941A patent/JP2835530B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59112415A (en) * | 1982-12-16 | 1984-06-28 | Comput Basic Mach Technol Res Assoc | Thin film magnetic head |
| JPS6151556A (en) * | 1984-08-21 | 1986-03-14 | Hitachi Ltd | Electrolyte analysis instrument |
| JPH01141302A (en) * | 1987-11-27 | 1989-06-02 | Seiko Instr & Electron Ltd | Method and device for executing simultaneously electrochemical measurement and tunnel current measurement |
| JPH01199218A (en) * | 1988-02-03 | 1989-08-10 | Shimadzu Corp | Sample temperature controller for analyzing device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008516207A (en) * | 2004-10-07 | 2008-05-15 | エヌアンビション・ゲーエムベーハー | Apparatus and method for scanning probe microscopy |
| WO2014006734A1 (en) * | 2012-07-06 | 2014-01-09 | 株式会社日立製作所 | Force probe microscope and height distribution measurement method |
| JPWO2014006734A1 (en) * | 2012-07-06 | 2016-06-02 | 株式会社日立製作所 | Force probe microscope and height distribution measuring method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2835530B2 (en) | 1998-12-14 |
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