JPH03180062A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH03180062A
JPH03180062A JP31952789A JP31952789A JPH03180062A JP H03180062 A JPH03180062 A JP H03180062A JP 31952789 A JP31952789 A JP 31952789A JP 31952789 A JP31952789 A JP 31952789A JP H03180062 A JPH03180062 A JP H03180062A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
insulating film
film
formed
conductor
flattening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP31952789A
Other versions
JP2501647B2 (en )
Inventor
Toshinori Morihara
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To make the capacity of each capacitor uniform by forming an insulating film on a first conductor film and a semiconductor substrate, by flattening the surface of this insulating film and by forming a lower electrode of a projecting structure thereafter.
CONSTITUTION: An insulating film 30 formed of an oxide film or the like is deposited on an insulating film 28 and a first conductor film 29, and a resist 30' of an etching rate being the same with the one of the insulating film 30 is applied for flattening on the insulating film 30. After the insulating film 30 is flattened by etching back, an opening 31 having a rectangular section is formed on the upper side of impurity regions 24b and 27b of the insulating film 30. After the insulating film 30 is formed on the first conductor film 29 and the semiconductor substrate 19 and the surface thereof is flattened in this way, a lower electrode of a projecting structure is formed. According to this constitution, a sufficient capacity of a capacitor can be secured even when the area of an element forming region is reduced.
COPYRIGHT: (C)1991,JPO&Japio
JP31952789A 1989-12-08 1989-12-08 The semiconductor memory device and manufacturing method thereof Expired - Lifetime JP2501647B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31952789A JP2501647B2 (en) 1989-12-08 1989-12-08 The semiconductor memory device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31952789A JP2501647B2 (en) 1989-12-08 1989-12-08 The semiconductor memory device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH03180062A true true JPH03180062A (en) 1991-08-06
JP2501647B2 JP2501647B2 (en) 1996-05-29

Family

ID=18111233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31952789A Expired - Lifetime JP2501647B2 (en) 1989-12-08 1989-12-08 The semiconductor memory device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP2501647B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192702A (en) * 1991-12-23 1993-03-09 Industrial Technology Research Institute Self-aligned cylindrical stacked capacitor DRAM cell

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6248062A (en) * 1985-08-28 1987-03-02 Sony Corp Memory cell
JPS62128168A (en) * 1985-11-29 1987-06-10 Hitachi Ltd Manufacture of charge accumulating capacitor
JPH01257365A (en) * 1988-04-07 1989-10-13 Fujitsu Ltd Semiconductor integrated circuit device
JPH01262658A (en) * 1988-04-13 1989-10-19 Nec Corp Dynamic random access memory device
JPH0276257A (en) * 1988-09-12 1990-03-15 Sharp Corp Semiconductor memory element
JPH02260454A (en) * 1989-03-30 1990-10-23 Sony Corp Manufacture of memory device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6248062A (en) * 1985-08-28 1987-03-02 Sony Corp Memory cell
JPS62128168A (en) * 1985-11-29 1987-06-10 Hitachi Ltd Manufacture of charge accumulating capacitor
JPH01257365A (en) * 1988-04-07 1989-10-13 Fujitsu Ltd Semiconductor integrated circuit device
JPH01262658A (en) * 1988-04-13 1989-10-19 Nec Corp Dynamic random access memory device
JPH0276257A (en) * 1988-09-12 1990-03-15 Sharp Corp Semiconductor memory element
JPH02260454A (en) * 1989-03-30 1990-10-23 Sony Corp Manufacture of memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192702A (en) * 1991-12-23 1993-03-09 Industrial Technology Research Institute Self-aligned cylindrical stacked capacitor DRAM cell

Also Published As

Publication number Publication date Type
JP2501647B2 (en) 1996-05-29 grant

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