JPH03175681A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPH03175681A JPH03175681A JP1314865A JP31486589A JPH03175681A JP H03175681 A JPH03175681 A JP H03175681A JP 1314865 A JP1314865 A JP 1314865A JP 31486589 A JP31486589 A JP 31486589A JP H03175681 A JPH03175681 A JP H03175681A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type layer
- photovoltaic device
- unit generating
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 5
- 238000010248 power generation Methods 0.000 claims description 12
- 230000000737 periodic effect Effects 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 229910021478 group 5 element Inorganic materials 0.000 abstract 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
Ｃイ）産業上の利用分野
本発明は、複数個の単位発電素子を積層ヒた光起電力装
置に関する。DETAILED DESCRIPTION OF THE INVENTION C) Industrial Application Field The present invention relates to a photovoltaic device in which a plurality of unit power generating elements are stacked.
（ロ）従来に技術
特開昭５５−１２５６８０号公報専に示された９口く、
ｐｉｎ、ｐｎ−ｎ＝等の半導体接合を有する単位５！電
素子を２重、３重の多重に積層した、所謂タンデム構造
の光起電力装置は、既に知４れている。このようなタン
デム構造の光起電力装置にあっては、光入射側から見て
前段の単位発電素子において発電に寄与することなく透
過した党を、後段の単位発電素子において、吸収し、有
効に利用することができるので、入射光の利用効率を高
め、トータル的な充電変換効率の向上を図ることができ
る。(b) The nine cases previously disclosed in Japanese Patent Application Laid-Open No. 125680/1980,
Unit 5 with semiconductor junctions such as pin, pn-n=! A photovoltaic device having a so-called tandem structure in which electric elements are stacked in double or triple layers is already known. In such a tandem-structured photovoltaic device, the energy that passes through the unit power generation element in the previous stage without contributing to power generation when viewed from the light incidence side is absorbed by the unit power generation element in the subsequent stage, and is effectively used. Therefore, it is possible to increase the utilization efficiency of incident light and improve the total charging conversion efficiency.
こうした光起電力装置においては、隣り合う単位５Ｎ！
電素子間の半導体接合が各単位発電素子内の接合と逆接
合となるため、・光電変換動（’ｆ＝により発生した光
キャリアの移動が阻害され、電流損失を招いてしまう。In such a photovoltaic device, adjacent units of 5N!
Since the semiconductor junctions between the electric elements are opposite to the junctions in each unit power generation element, the movement of photocarriers generated by photoelectric conversion ('f=) is inhibited, resulting in current loss.
そこで、米国特許第４．２７２．６４１号明ｍ書並びに
図面に開示さｔＬｌ光起電力装置にあっては、逆接合を
構成する単位発を素子の不純物層のドープ量を高くする
ことが示唆されると共に、隣り合う単位発電素子間にＰ
ｔＳ＋０＋サーメツトやＰｔ等の高化］拝関数の金属層
を配挿する横這が開示されている。Therefore, in the tLl photovoltaic device disclosed in U.S. Pat. At the same time, P between adjacent unit power generating elements
tS+0+Improvement of Cermet, Pt, etc.] A flat method of disposing a metal layer with a high function is disclosed.
斯る構造によれば、金属層と接する単位発電素子の不純
物層のＩｒ１．みを厚くすることが必要不イ欠となって
おり、上記米国特許によれば、ｎ型層のＰｌみを約４５
０人としている。According to such a structure, Ir1. of the impurity layer of the unit power generating element in contact with the metal layer. According to the above US patent, it is essential to increase the thickness of the n-type layer by approximately 45%.
There are 0 people.
１、ハ）発明が解決しようとする課題
ところが、光キャリアの発生にほとんど寄与しないｎ型
層を厚くすることは、このｎ型層の後段に位置する単位
５！電素子への光入射を遮ることになる。よって、入射
光の利用効率は低下し、タンデム構成の採用による光電
変換効率の向上も望めなくなってしまう。1. C) Problems to be Solved by the Invention However, increasing the thickness of the n-type layer, which hardly contributes to the generation of photocarriers, is difficult for units 5! This will block light from entering the electronic elements. Therefore, the utilization efficiency of incident light decreases, and it becomes impossible to expect an improvement in photoelectric conversion efficiency by adopting a tandem configuration.
そこで、本発明の目的は、入ＩＡｔ光の利用効率を低下
させることなく、！ＩＬ位発電素子感の接合特性を向上
させることにある。Therefore, an object of the present invention is to avoid reducing the utilization efficiency of input IAt light! The objective is to improve the bonding characteristics of the IL power generation element.
（ニ）課題を解決するための手段
本発明は、複数個の単位発電素子を積層した光起電力装
置において、隣り合う単位発電素子の間に、周刈律表用
族または■族の元素からなる境界層を配挿したことを特
徴とする。(d) Means for Solving the Problems The present invention provides a photovoltaic device in which a plurality of unit power generating elements are stacked, in which elements of the group or It is characterized by the placement of a boundary layer.
（ホ）作用
本５を明のよれば、咽位発電素子の境界に配挿された境
界に４が、単位発電素子の境界の接合特性を向上させる
。(E) Effect According to Book 5, the boundary 4 arranged at the boundary of the throat power generation element improves the bonding characteristics of the boundary of the unit power generation element.
（へン実施例
第１図は本発明の第１の形態の大施例全示すｔｉＫ略的
略画断面図り、ガラス、耐熱アラスチック等の透光性材
料からなる支持基板］上に形成されたＩＴＯ，Ｓｎｏｗ
等の透光性４を酸化物からなる透明１極２の上に、ｐ型
層３ｐ、 ｉ型層３１及びｎ型層３ｎから構成される
第１単位発電素子３と、ｐ型層４ｐ、ｉ型層４１及びｎ
型層４ｎから溝底される第２１１１位５！電素子４とを
順次積層形成した構成である。(Embodiment FIG. 1 is a schematic cross-sectional view showing a large embodiment of the first embodiment of the present invention, and is formed on a support substrate made of a translucent material such as glass or heat-resistant plastic.) ITO, Snow
A first unit power generating element 3 composed of a p-type layer 3p, an i-type layer 31 and an n-type layer 3n, a p-type layer 4p, i-type layer 41 and n
2111th place 5 to be grooved from the mold layer 4n! It has a structure in which electronic elements 4 are sequentially stacked.
更に、本発明の特徴として、第１単位発ｔＪ７：子３と
第２単位′Ｆ＠電素子１との間に周明津表１１１族また
はｖ奴の元素から成る境界層５を配挿している。Furthermore, as a feature of the present invention, a boundary layer 5 made of an element of Group 111 or V of the Chou Mingjin table is interposed between the first unit tJ7: element 3 and the second unit 'F@electronic element 1. .
尚、第２単位発電素子４の背面側には、金属電極Ｇが形
成さｔｌている。Note that a metal electrode G is formed on the back side of the second unit power generation element 4.
第１表は第１の形態の実施例における第１具体例及び第
２具体例の形成条件を示している。同表から分かるよう
に、各具体例の境界層３は、第１具体例においてＰ原子
からなり、また第２具体例においてＢ原子からなってい
る。史に、境界層５の膜厚は０．２原子層である。Table 1 shows the forming conditions of the first specific example and the second specific example in the embodiment of the first form. As can be seen from the table, the boundary layer 3 of each specific example consists of P atoms in the first specific example, and B atoms in the second specific example. Historically, the thickness of the boundary layer 5 is 0.2 atomic layer.
ここで、１唄子層とは、ある平面の全面に単原子の層の
一層分が存在することを示し、０．２原子層とは、ｑｔ
均して、ある平面の２０？Ｑの面に、単原子−の肋の一
層分が存在することを表す。−殻内に言えば、ｍ原子層
（０くｍ≦１）とは、平均して、あるｆ面のｍＸ１０Ｃ
３％の面に、１１原ｆの層の一層分が存在することを示
す。Here, 1 atomic layer means that one layer of monoatomic atoms exists on the entire surface of a certain plane, and 0.2 atomic layer means qt
Averaged, 20 on a certain plane? This represents the presence of one layer of monoatomic ribs on the Q plane. - In terms of the shell, m atomic layers (0 m≦1) mean, on average, mX10C of a certain f-plane.
It shows that one layer of 11 original f exists on the 3% surface.
（以下、余白）
また、第２表は比較例としての境界層５のない光起電力
装置の形成条件を示している。(Hereinafter, blank spaces) Table 2 shows the conditions for forming a photovoltaic device without the boundary layer 5 as a comparative example.
第２表
一方、第２図は本発明の第２の形態の実施例を示す概略
的断面図であり、この実施例は、上述の第１の形態の実
施例におけるｎ型層３ｎに相当するｎ型層３０ｎが、周
明律表Ｖ族の元素からなる層３１とノンドープの非晶質
シリコンからなる層３２との多層構造（本実施例では４
層構造）からなっている点に特徴とする。Table 2 On the other hand, FIG. 2 is a schematic sectional view showing an embodiment of the second embodiment of the present invention, and this embodiment corresponds to the n-type layer 3n in the embodiment of the first embodiment described above. The n-type layer 30n has a multilayer structure (in this example, a layer 31 made of an element of Group V of the Shuming Table) and a layer 32 made of non-doped amorphous silicon (in this example,
It is characterized by a layered structure.
更に、第３図は本発明の第３の形態の実施例を示す概略
的断面図であり、この実施例は、上述の第１の形態の実
施例におけるｐ型層４ｐに相当するｐ５＋ｄ４０ｐが、
ノンドープの非晶質シリコンからなる層１１と周期律表
Ｉ１１挨の元素からなる層＋２との多層構造（本実施例
では４層構造）からなっている点に特徴としている。Further, FIG. 3 is a schematic cross-sectional view showing an embodiment of the third embodiment of the present invention, and in this embodiment, p5+d40p corresponding to the p-type layer 4p in the embodiment of the first embodiment described above is
It is characterized in that it has a multilayer structure (a four-layer structure in this embodiment) consisting of a layer 11 made of non-doped amorphous silicon and a layer +2 made of elements of I11 of the periodic table.
なお、これら第２及び第３の形態の実施例において、ｎ
型層３０ｎ及びｐ型層４０ｐ以外の構成は第１の形態の
実施例と同一であり、同番号を付して説明を省略する。In addition, in the examples of the second and third forms, n
The configurations other than the type layer 30n and the p-type layer 40p are the same as those in the first embodiment, so the same numbers are given and explanations are omitted.
第３表は第２及び第３の形態の実施例に対する第３具体
例のｎ型層３０ｎの層３１．３２及び第４具体例のｐ型
層４０ｐの層、ｔｌ、 ４２の形成条件を示す。Table 3 shows the formation conditions for the layers 31 and 32 of the n-type layer 30n of the third specific example and the layers tl and 42 of the p-type layer 40p of the fourth specific example for the embodiments of the second and third embodiments. .
尚、これら第３及び第４具体例の他の層の形成条件は、
第１及び第２具体例と全く同じである。The conditions for forming other layers in these third and fourth specific examples are as follows:
This is exactly the same as the first and second specific examples.
第４表は、本発明の光起電力装置の第１乃至第４具体例
及び従来の光起電り装置の比較例の開孜電］−Ｆ（＼’
ｏｃ）、短絡電流（ＩＳＣ）、曲線因子（Ｆ、Ｆ、）及
び変換効率（η）の測定結果を示している。Table 4 shows the opening times of the first to fourth specific examples of the photovoltaic device of the present invention and comparative examples of the conventional photovoltaic device]-F(\'
oc), short circuit current (ISC), fill factor (F, F, ), and conversion efficiency (η).
第４表
第１表から明らかなように、本発明によれば、単位発電
素子３と４との間に境界層５を配挿したので、各ｑｔ素
子３及び４間に良好な接合特性がｉりられ、開放電圧の
向上を図ることができる。Table 4 As is clear from Table 1, according to the present invention, since the boundary layer 5 is disposed between the unit power generation elements 3 and 4, good bonding characteristics are achieved between each QT element 3 and 4. It is possible to improve the open circuit voltage.
また、第１実施例では単位５！電素子３のｎ型層３ｎの
ドープ歇及び膜厚を、また第２実施例では単位５ａｔ素
子４のｐ型層４ｐのドープ駄及び膜１１を、夫々比較例
に比して減らしてこれら各層における光吸収を減少させ
ることができ、単位発電素子４のｉ型層４１への入射光
量を増大させ、短絡電流の改善を図ることができる。Moreover, in the first embodiment, the unit is 5! The doping level and film thickness of the n-type layer 3n of the electronic element 3, and the doping level and film 11 of the p-type layer 4p of the unit 5at element 4 in the second embodiment are reduced compared to the comparative example, respectively. The amount of light incident on the i-type layer 41 of the unit power generating element 4 can be increased, and the short circuit current can be improved.
更に、第３及び第４具体例においては、上述の第１及び
第２具体例における効果が大きくなっており、開放電圧
の向上及び短絡電流の改善をより一層図ることができ、
優れた変換効率を得ることができる。Furthermore, in the third and fourth specific examples, the effects of the first and second specific examples described above are greater, and it is possible to further improve the open circuit voltage and short circuit current,
Excellent conversion efficiency can be obtained.
ところで、上記各具体例においては、境界層５の膜厚は
、０．２原子層に限定されるものでない。Incidentally, in each of the above specific examples, the thickness of the boundary layer 5 is not limited to 0.2 atomic layer.
但し、薄すぎると効果がなく、また摩すぎると層内欠陥
による悪影響や境界層での光吸収が増大する。従って、
０．１〜０．５原子層とすることが好ましい。However, if it is too thin, it will not be effective, and if it is polished too much, the adverse effects of intralayer defects and light absorption in the boundary layer will increase. Therefore,
It is preferable to set it as 0.1-0.5 atomic layer.
また、境界層５としてはＰ原子に代えてＡｓ、ｓｂを、
またＢ原子に代えてＡＩ、Ｇａ、ｒｎを用いてもよい。In addition, as the boundary layer 5, As and sb are used instead of P atoms,
Moreover, AI, Ga, or rn may be used instead of the B atom.
更に、境界層５として、上述の実施例では周期律ｉ Ｉ
ＩＩ族またはｖ６の元素からなる１つの層を形成しただ
けであるが、ｎ型層３ｎと抜する側に周期律表Ｖ属の元
素から威る層を、及びｐ形層４ｐと接する側に周期律表
ＩＩＩ族からなる層を形成する構成としてもよい。Furthermore, as the boundary layer 5, in the above embodiment, the periodic law i I
Although only one layer made of elements of group II or V6 was formed, a layer made of elements of group V of the periodic table was formed on the side that was not connected to the n-type layer 3n, and on the side that was in contact with the p-type layer 4p. A structure may be adopted in which a layer consisting of Group III of the periodic table is formed.
（ト）発明の効果
本発明は、複数個の単位発電素子を積層した光起電力装
置において、隣り合う単位発電素子の間に、少なくとも
周期律表ＩＩＩ族またはＶ族の元素からなる境界層を配
挿したことを特徴とするので、単位発１素子の境界部の
接合特性を改善することができ、装置の出力特性を大き
く向上させることができる。(G) Effects of the Invention The present invention provides a photovoltaic device in which a plurality of unit power generation elements are stacked, in which a boundary layer consisting of at least an element of group III or group V of the periodic table is provided between adjacent unit power generation elements. Since it is characterized by the arrangement, it is possible to improve the bonding characteristics at the boundary of one unitary element, and it is possible to greatly improve the output characteristics of the device.
【図面の簡単な説明】
第１図乃至第３図は、夫々本発明の実施例を示す概略的
断面図である。BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 to 3 are schematic sectional views showing embodiments of the present invention.
Claims (4)
おいて、隣り合う単位発電素子の間に、周期律表III族
またはＶ族の元素からなる境界層を配挿したことを特徴
とする光起電力装置。(1) A photovoltaic device in which a plurality of unit power generating elements are laminated, characterized in that a boundary layer made of an element of group III or group V of the periodic table is arranged between adjacent unit power generating elements. Photovoltaic device.
は、０．１〜０．５原子層であることを特徴とする請求
項１記載の光起電力装置。(2) The photovoltaic device according to claim 1, wherein the layer consisting of Group III or V of the periodic table has a thickness of 0.1 to 0.5 atomic layer.
ことを特徴とする請求項１記載の光起電力装置。(3) The photovoltaic device according to claim 1, wherein the unit power generation element is mainly made of amorphous silicon.
少なくとも一方は、周期律表III族またはＶ族からなる
層と非晶質シリコンからなる層との多層構造であること
を特徴とする請求項３記載の光起電力装置。(4) At least one of the impurity layers of the unit power generating element adjacent to the boundary layer is characterized in that it has a multilayer structure including a layer made of Group III or V of the periodic table and a layer made of amorphous silicon. The photovoltaic device according to claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1314865A JP2815941B2 (en) | 1989-12-04 | 1989-12-04 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1314865A JP2815941B2 (en) | 1989-12-04 | 1989-12-04 | Photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03175681A true JPH03175681A (en) | 1991-07-30 |
| JP2815941B2 JP2815941B2 (en) | 1998-10-27 |
Family
ID=18058553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1314865A Expired - Fee Related JP2815941B2 (en) | 1989-12-04 | 1989-12-04 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2815941B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336623A (en) * | 1992-03-02 | 1994-08-09 | Showa Shell Sekiyu K.K. | Process for producing integrated solar cell |
-
1989
- 1989-12-04 JP JP1314865A patent/JP2815941B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5336623A (en) * | 1992-03-02 | 1994-08-09 | Showa Shell Sekiyu K.K. | Process for producing integrated solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2815941B2 (en) | 1998-10-27 |
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