JPH03166777A - Sputtering apparatus - Google Patents

Sputtering apparatus

Info

Publication number
JPH03166777A
JPH03166777A JP1308221A JP30822189A JPH03166777A JP H03166777 A JPH03166777 A JP H03166777A JP 1308221 A JP1308221 A JP 1308221A JP 30822189 A JP30822189 A JP 30822189A JP H03166777 A JPH03166777 A JP H03166777A
Authority
JP
Japan
Prior art keywords
substrate
targets
chamber
plate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1308221A
Other languages
Japanese (ja)
Inventor
Kenji Iharada
健志 居原田
Mitsuyoshi Yoshii
吉井 光良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP1308221A priority Critical patent/JPH03166777A/en
Publication of JPH03166777A publication Critical patent/JPH03166777A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce temperature irregularity of a substrate during film forming and to obtain a high temperature superconducting thin film of high quality by arranging a flat plate in which a through hole is opened at a position corresponding to the arranging positions of targets on a flat surface along the opposed surface of the target to a rotary holder in a chamber. CONSTITUTION:A flat plate 4 is disposed on a flat surface along the opposed surfaces of substrate holders 2 of targets T1-T3. The plate 4 is formed, for example, of a stainless steel plate having 3mm of thickness, supported by four posts 5 implanted to the bottom of a chamber 1, and through holes 4a are opened at positions corresponding to the targets T1-T3 disposing positions. Such a plate 4 is provided always to keeps the distance between a substrate S and an articles opposed during the rotation and movement of the substance S constant. Since variation in reflected heat to the substrate S is eliminated, the temperature of the substrate S during film forming is stabilized. Thus, a high temperature superconducting thin film having uniform composition and high quality is obtained.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明はスパッタリング装置に関し、特に、セラミック
系の高温超電導薄膜の製膜に適したスパッタリング装置
に関する. 〈従来の技術〉 Y−B a−C u−0等をはじめとするセラミック系
の高温超電導薄膜の製膜法として、電子ビーム蒸着法や
スパッタ法等が提案されているが、膜が複合膜であるこ
とや、結晶品質の点から鑑みて特にスパッタ法が注目さ
れている。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a sputtering apparatus, and particularly to a sputtering apparatus suitable for forming a ceramic-based high-temperature superconducting thin film. <Prior art> Electron beam evaporation, sputtering, etc. have been proposed as methods for forming ceramic-based high-temperature superconducting thin films such as Y-B a-C u-0, but the films are composite films. The sputtering method is attracting particular attention in view of the fact that

スバッタ法に基づく高温超電導薄膜の製膜は、従来、真
空チャンバ内に所定のターゲットと基板を配置し、ここ
にアルゴンガスを導入してこれを放電によってプラズマ
化し、そのアルゴンイオンによるスパッタリングで基板
表面に薄膜を形威した後、これを酸素雰囲気中で熱処理
して酸化することによって、意図する超電導薄膜を得て
いる。
Conventionally, the deposition of high-temperature superconducting thin films based on the sputtering method involves placing a predetermined target and substrate in a vacuum chamber, introducing argon gas here and turning it into plasma by electric discharge, and sputtering the substrate surface with the argon ions. After forming a thin film, the intended superconducting thin film is obtained by heat-treating and oxidizing it in an oxygen atmosphere.

あるいは、同様な真空チャンバ内にアルゴンガスととも
に酸素ガスを導入し、基板を加熱しつつスパッタリング
することによって、スバッタ原子を酸素と反応させつつ
製膜する、いわゆる反応性スパッタ法も採用されている
Alternatively, a so-called reactive sputtering method is also employed in which a film is formed while sputtering atoms react with oxygen by introducing oxygen gas together with argon gas into a similar vacuum chamber and performing sputtering while heating the substrate.

く発明が解決しようとする課題〉 上記の反応性スバッタ法に基づいて、例えば、Y−Ba
−Cu−0系の高温超電導薄膜を製膜する場合、真空チ
ャンバ内に、CuO,Y20.およびBaCuO2の三
つのターゲットを円周上に配列し、基板をそのホルダの
回転によって、各ターゲット上方位置に順次移動させる
、いわゆる多元スバッタ法が採用されている。ところが
、このような多元スバッタ法に基づく従来の装置におい
ては、基板がターゲットの上方位置にあるときと、そう
でないときとでは、それぞれの位置での反射熱が異なる
ため基板温度が安定せず、このことが、良好な薄膜或長
を阻害する原因となっている。なお、従来では、製膜中
の基板温度を一定に保つべく、基板加熱温度を高めに設
定することがなされているが、ヒータの寿命面等におけ
る問題が残されていた。
Problems to be Solved by the Invention Based on the above-mentioned reactive spatter method, for example, Y-Ba
- When forming a Cu-0-based high-temperature superconducting thin film, CuO, Y20. A so-called multi-dimensional spatter method is adopted in which three targets of BaCuO2 and BaCuO2 are arranged on the circumference and the substrate is sequentially moved to a position above each target by rotating the holder. However, in conventional devices based on such a multi-dimensional sputtering method, the substrate temperature is unstable when the substrate is above the target and when it is not because the reflected heat at each position is different. This is a cause of inhibiting good thin film elongation. In the past, the substrate heating temperature was set high in order to keep the substrate temperature constant during film formation, but problems such as the lifespan of the heater remained.

本発明の目的は、製膜中における基板の温度ムラを少な
くし、もって良質な高温超電導薄膜を得ることのできる
スパッタリング装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a sputtering apparatus that can reduce temperature unevenness of a substrate during film formation and can obtain a high-quality high-temperature superconducting thin film.

く課題を解決するための手段〉 上記の目的を達或するために、本発明では、実施例に対
応する第1図、第2図に示すように、チャンバ1内の、
ターゲットT+,Tz,T3のホルダ2との対向面に沿
う平面上に、各ターゲッ}T+.Tz,Tsの配設位置
に相応する個所に貫通穴4a・・・4aが穿たれた平仮
4を配設している。
Means for Solving the Problems> In order to achieve the above object, in the present invention, as shown in FIGS. 1 and 2 corresponding to the embodiment, in the chamber 1,
Each target }T+. A flat piece 4 having through holes 4a...4a is provided at locations corresponding to the locations where Tz and Ts are provided.

く作用〉 多元スパッタ法に基づく従来の製膜装置において、基板
温度が安定しない原因は、基板がターゲット上方位置に
あるときと、そうでないときとでは、基板が面する物体
までの距離、すなわち物体による反射熱が異なるからで
ある。
In conventional film forming equipment based on the multi-dimensional sputtering method, the reason why the substrate temperature is not stable is that the distance to the object facing the substrate changes when the substrate is above the target and when it is not. This is because the reflected heat is different.

そこで、本発明のように、平板4を設けることによって
、基板が受け6反射熱の変動を少なくすることができ、
これにより基板温度が安定する。
Therefore, by providing the flat plate 4 as in the present invention, fluctuations in the reflected heat received by the substrate 6 can be reduced.
This stabilizes the substrate temperature.

〈実施例〉 第1図および第2図は本発明実施例の構或の説明図で、
第1図はチャンバ1をその中央で縦に切断して示す正面
図、第2図は第1図に示す■一■平面でチャンバ1を切
断して示す平面図である。
<Example> FIG. 1 and FIG. 2 are explanatory diagrams of a structure of an example of the present invention.
1 is a front view showing the chamber 1 cut vertically at the center, and FIG. 2 is a plan view showing the chamber 1 cut along the plane 1-1 shown in FIG.

チャンバ1内に三つのターゲットT.,T.およびT3
が同一の円周上に沿って配列されている。
Three targets T. ,T. and T3
are arranged along the same circumference.

このターゲットT,,T.,T,はそれぞれCub,Y
20:+,  B a C u O Zである。
This target T,,T. , T, are Cub, Y, respectively
20:+, B a C u O Z.

また、チャンバ1内には、ターゲット群T1,T2,T
.に対向して基板ホルダ2が配設されている。この基板
ホルダ2には、ヒータ3が設けられており、このヒータ
3部に基板Sが装着される。また、基板ホルダ2は、チ
ャンバ1外部に配設された駆動機構(図示せず)等によ
って回転し、この回転によって、基板Sは各ターゲット
Tt, Tz, T3上を順次回転移動するよう構威さ
れている。
Also, in the chamber 1, target groups T1, T2, T
.. A substrate holder 2 is disposed opposite to. This substrate holder 2 is provided with a heater 3, and a substrate S is mounted on this heater 3 portion. Further, the substrate holder 2 is rotated by a drive mechanism (not shown) etc. disposed outside the chamber 1, and by this rotation, the substrate S is configured to rotate and move sequentially over each target Tt, Tz, T3. has been done.

以上の構或において、チャンバ1内の真空引きを行った
後にアルゴンと酸素との混合ガスを導入し、かつ、基板
ホルダ2を接地した状態で、各ターゲッ}TI,’r.
,T3それぞれに高周波電圧を印加すると、その各ター
ゲットと基板ホルダ2間にプラズマが発生し、そのプラ
ズマ中のアルゴンイオンが各ターゲットを衝撃し、この
衝撃によって放出された各原子は、基板Sがそれぞれの
各ターゲット上方に位置した時点で、その基板表面に順
次蒸着し、これによりその表面上にY−Ba−Cu−O
系の高温超電導薄膜を得る。
In the above structure, after evacuating the chamber 1, a mixed gas of argon and oxygen is introduced, and with the substrate holder 2 grounded, each target }TI,'r.
, T3, plasma is generated between each target and the substrate holder 2, argon ions in the plasma bombard each target, and each atom emitted by this bombardment causes the substrate S to Once positioned above each target, Y-Ba-Cu-O is sequentially deposited on the surface of the substrate, thereby depositing Y-Ba-Cu-O on the surface.
Obtain a high-temperature superconducting thin film of the system.

さて、本発明実施例の特徴的構戒は、各ターゲットTt
.Tz.T3の基板ホルダ2との対向面に沿う平面上に
、平板4を配設した点にある。この平trfi4は、例
えば肉厚3 mmのステンレス板で、チャンバ1の底部
に植設された4本の支柱5・・・5によって支持されて
いる。また、平板4には、各ターゲッ}T+,Tz.T
3配設位置に相応する個所に貫通穴4a・・・4aが穿
たれている。
Now, the characteristic structure of the embodiment of the present invention is that each target Tt
.. Tz. The point is that the flat plate 4 is disposed on a plane along the surface of T3 facing the substrate holder 2. This flat trfi 4 is, for example, a stainless steel plate with a wall thickness of 3 mm, and is supported by four pillars 5 . . . 5 planted in the bottom of the chamber 1 . Further, on the flat plate 4, each target }T+, Tz. T
Through holes 4a...4a are bored at locations corresponding to the three arrangement positions.

このような平板4を設けることにより、基板Sが回転移
動中に面する物体との距離が常に一定となり、基板Sが
受ける反射熱の変動がなくなる結果、製膜中における基
板Sの温度が安定する。
By providing such a flat plate 4, the distance between the substrate S and the object it faces during rotational movement is always constant, and as a result, the temperature of the substrate S during film formation is stabilized as a result of eliminating fluctuations in the reflected heat that the substrate S receives. do.

ここで、平板4を設置しない状態で、ターゲットT真上
の位置と、第2図に示す二点鎖線の位置での基板Sの温
度をそれぞれ測定したところ、その両者間に約120゜
C程度もの差があった。一方、平板4を設置した状態で
、同様に測定したところ、その温度差は認められず、平
板4を設けたことによる効果を確認できた。
Here, when the temperature of the substrate S was measured at the position directly above the target T and at the position indicated by the two-dot chain line in Fig. 2 without the flat plate 4 installed, the temperature between the two was about 120°C. There was a difference. On the other hand, when similar measurements were made with the flat plate 4 installed, no temperature difference was observed, confirming the effect of providing the flat plate 4.

〈発明の効果〉 以上説明したように、本発明によれば、多元スパッタ法
に基づく製膜において、基板温度を安定に保つことがで
きる。これにより、組或が均一な良質の高温超電導薄膜
を得ることがでる。また、従来のように、基板を過度に
加熱する必要がなくなり、基板加熱用ヒータの寿命面に
おいても有利である。
<Effects of the Invention> As explained above, according to the present invention, the substrate temperature can be kept stable in film formation based on multi-source sputtering. This makes it possible to obtain a high-quality high-temperature superconducting thin film with a uniform structure. Further, unlike the conventional method, there is no need to excessively heat the substrate, which is advantageous in terms of the life of the heater for heating the substrate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は本発明実施例の構戒の説明図で、
第1図はチャンバ1をその中央で縦に切断して示す正面
図、第2図は第1図に示す■−■平面でチャンバ1を切
断して示す平面図である。 1・・・チャンバ 2・・・基手反ホノレダ 3 ・ 4 ・ 4a・・・4a ・ TI,TZ,Tel・ S ・ ・ヒータ ・平板 ・貫通穴 ・ターゲット ・基板
FIG. 1 and FIG. 2 are explanatory diagrams of the structure of the embodiment of the present invention,
FIG. 1 is a front view showing the chamber 1 cut vertically at the center thereof, and FIG. 2 is a plan view showing the chamber 1 cut along the plane 1--2 shown in FIG. 1... Chamber 2... Base plate 3, 4, 4a...4a, TI, TZ, Tel, S... Heater, flat plate, through hole, target, substrate

Claims (1)

【特許請求の範囲】[Claims] チャンバ内に、同一円周に沿って配列された複数のター
ゲットと、このターゲット群に対向して配設され、基板
をその各ターゲット上方位置に順次移動させつつ同時に
加熱する回転ホルダを備え、上記チャンバ内の放電によ
り生成されたプラズマ中のイオンで上記ターゲットそれ
ぞれを衝撃し、この衝撃によって放出された各原子を、
上記ホルダにより移動する基板表面に順次衝突させるこ
とによって、その基板表面上に薄膜を得る装置において
、上記チャンバ内の、上記ターゲットの上記回転ホルダ
との対向面に沿う平面上に、上記各ターゲットの配設位
置に相応する個所に貫通穴が穿たれた平板を配設したこ
とを特徴とする、スパッタリング装置。
The chamber is equipped with a plurality of targets arranged along the same circumference, and a rotating holder disposed opposite to the group of targets to sequentially move the substrate to a position above each of the targets and heat the substrate at the same time. Each of the targets is bombarded with ions in the plasma generated by the discharge in the chamber, and each atom released by this bombardment is
In the apparatus for forming a thin film on the surface of a substrate by sequentially colliding with the surface of the substrate moving by the holder, each of the targets is placed in the chamber on a plane along the surface of the target facing the rotating holder. A sputtering device characterized in that a flat plate with through holes is provided at locations corresponding to the installation positions.
JP1308221A 1989-11-27 1989-11-27 Sputtering apparatus Pending JPH03166777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1308221A JPH03166777A (en) 1989-11-27 1989-11-27 Sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1308221A JPH03166777A (en) 1989-11-27 1989-11-27 Sputtering apparatus

Publications (1)

Publication Number Publication Date
JPH03166777A true JPH03166777A (en) 1991-07-18

Family

ID=17978384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1308221A Pending JPH03166777A (en) 1989-11-27 1989-11-27 Sputtering apparatus

Country Status (1)

Country Link
JP (1) JPH03166777A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11335835A (en) * 1998-05-21 1999-12-07 Nec Corp Sputtering device and formation of film thereby
JP2003522831A (en) * 2000-02-09 2003-07-29 コンダクタス,インコーポレイテッド Apparatus and method for thin film deposition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11335835A (en) * 1998-05-21 1999-12-07 Nec Corp Sputtering device and formation of film thereby
JP2003522831A (en) * 2000-02-09 2003-07-29 コンダクタス,インコーポレイテッド Apparatus and method for thin film deposition

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