JPH03156962A - Temperature control apparatus - Google Patents

Temperature control apparatus

Info

Publication number
JPH03156962A
JPH03156962A JP29679789A JP29679789A JPH03156962A JP H03156962 A JPH03156962 A JP H03156962A JP 29679789 A JP29679789 A JP 29679789A JP 29679789 A JP29679789 A JP 29679789A JP H03156962 A JPH03156962 A JP H03156962A
Authority
JP
Japan
Prior art keywords
temperature
target temperature
heated
target
bath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29679789A
Other languages
Japanese (ja)
Inventor
Shigeyuki Maruyama
茂幸 丸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP29679789A priority Critical patent/JPH03156962A/en
Publication of JPH03156962A publication Critical patent/JPH03156962A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To heat an object to be heated up to a target temperature in a short time and with good accuracy by a method wherein the object to be heated is heated in a first thermostatic bath, it is transferred to a second thermostatic bath before it reaches the target temperature and it is heated up to the target temperature. CONSTITUTION:A temperature of a first thermostatic bath 1 is set to a temperature higher than a target temperature; a temperature of a second thermostatic bath 2 is set to the target temperature. An object 5 to be heated is carried into the first thermostatic bath 1. Since the temperature at this time is higher than the target temperature, a movement amount of heat to the object 5 to be heated becomes large and a temperature of the object 5 to be heated is raised in a short time. Before the target temperature is reached, a shutter 4 installed at a partition plate 3 is opened; the object 5 to be heated is transferred to the second thermostatic bath 2 by using a conveyance mechanism 6; at this time, the temperature of the object 5 to be heated is close to the target temperature. Thereby, the object to be heated can be heated up to the target temperature in a short time and with good accuracy.

Description

【発明の詳細な説明】 〔概 要〕 温度制御装置の構造に関し、 被加熱物あるいは被冷却物を短時間で精度良く目標温度
に到達させることのできる温度制御装置を提供すること
を目的とし、 目標温度より高い温度に設定された第1の恒温槽と、該
第1の恒温槽と仕切り板を介して接続され目標温度に設
定された第2の恒温槽を有する温度制御装置であって、
被加熱物を該第1の恒温槽で加熱し目標温度に達する前
に該第2の恒温槽へ移送して目標温度に到達させるよう
に構成するか、あるいは、目標温度より低い温度に設定
された第1の恒温槽と、該第1の恒温槽と仕切り板を介
して接続され目標温度に設定された第2の恒温槽を有す
る温度制御装置であって、被冷却物を該第1の恒温槽で
冷却し目標温度に達する前に該第2の恒温槽へ移送して
目標温度に到達させるように構成する。
[Detailed Description of the Invention] [Summary] Regarding the structure of a temperature control device, an object of the present invention is to provide a temperature control device that can accurately bring an object to be heated or cooled to a target temperature in a short time. A temperature control device having a first constant temperature bath set at a temperature higher than a target temperature, and a second constant temperature bath connected to the first constant temperature bath via a partition plate and set to the target temperature,
The object to be heated is heated in the first thermostatic oven and transferred to the second thermostatic oven to reach the target temperature before reaching the target temperature, or the object is set at a temperature lower than the target temperature. A temperature control device having a first constant temperature bath and a second constant temperature bath connected to the first constant temperature bath via a partition plate and set to a target temperature, It is configured such that it is cooled in a constant temperature bath and transferred to the second constant temperature bath to reach the target temperature before reaching the target temperature.

〔産業上の利用分野〕[Industrial application field]

本発明は温度制御装置の構造に関する。 The present invention relates to the structure of a temperature control device.

ICの製造・試験工程においては、ICを様々な温度環
境のもとに置くことが要求される。この際、スループッ
トの向上のためにはICを短時間でかつ精度良く目標温
度に到達させることが必要である。
In the manufacturing and testing process of ICs, it is required that the ICs be placed in various temperature environments. At this time, in order to improve throughput, it is necessary to make the IC reach the target temperature in a short time and with high accuracy.

〔従来の技術〕[Conventional technology]

パンケージに封入されたICの温度試験を行う場合、従
来は予め目標温度に設定された恒温槽内にICをセント
してICの温度が目標温度に到達するのを待つ方法をと
るのが一般的である。目標温度への到達時間は恒温槽と
ICとの間の熱の移動量によって決まるが、ICの熱容
量が大きくかつ目標温度との温度差が大きいほど長くな
り、その他に恒温槽自体の熱容量およびその加熱あるい
は冷却方式にも依存する。
When performing a temperature test on an IC sealed in a pancage, the conventional method is to place the IC in a constant temperature chamber that is preset to a target temperature and wait for the IC temperature to reach the target temperature. It is. The time it takes to reach the target temperature is determined by the amount of heat transfer between the thermostatic oven and the IC, but the larger the heat capacity of the IC and the greater the temperature difference from the target temperature, the longer it will take. It also depends on the heating or cooling method.

ところが、近年のICの高集積化に伴うパッケージの多
ピン化によりパッケージの大型化が進んでその熱容量は
大きくなる傾向にあり、このため目標温度への到達時間
はさらに長くなる。また、パッケージの大型化により恒
温槽へのICの収納数が減少しスループットは一層低下
する。
However, due to the increase in the number of pins in packages accompanying the recent increase in the degree of integration of ICs, packages are becoming larger and their heat capacity tends to increase, and as a result, the time required to reach the target temperature becomes even longer. Furthermore, as the package becomes larger, the number of ICs that can be stored in the thermostatic oven decreases, further reducing throughput.

以上のような問題について従来は、恒温槽を大型化する
ことあるいはその加熱・冷却方式を改良することによっ
て対処してきた。即ち、恒温槽の大型化はその熱容量を
大きくし、かつICの収納数を増加させてスループット
を向上させる上で有効である。しかしその反面、恒温槽
の占有面積および電力消費量の増大をもたらしてコスト
の上昇を招くという欠点がある。また、加熱・冷却方式
の改良も試みられている。たとえば、風量循環による対
流伝熱式の恒温槽では、恒温槽内の風量を増加させるこ
とにより熱移動の効率を改善し目標温度への到達時間の
短縮を図る。しかし、風圧損失等の要素があって顕著な
効果は望めない。また、目標温度に制御されているブロ
ックに直接ICパッケージを接触させる伝導伝熱方式の
恒温槽を用いた場合には、上記対流伝熱方式に比べて熱
移動の効率を向上させることができるが、ICを損傷す
る恐れがありかつブロックの形杖を各パッケージに合わ
せて加工を施す必要があって汎用性に乏しい等の欠点が
ある。さらに、加熱源として赤外線ヒータを用いる方法
も考えられるが、ICパッケージの温度を直接検出しな
ければならず正確な温度制御を行うことが困難である。
Conventionally, the above-mentioned problems have been dealt with by increasing the size of the thermostatic chamber or by improving its heating and cooling methods. That is, increasing the size of the thermostatic oven is effective in increasing its heat capacity and increasing the number of ICs stored, thereby improving throughput. However, on the other hand, there is a drawback that the area occupied by the thermostatic chamber and the power consumption increase, leading to an increase in cost. Attempts are also being made to improve heating and cooling methods. For example, in a convection heat transfer thermostatic oven using air volume circulation, increasing the air volume within the thermostatic oven improves the efficiency of heat transfer and shortens the time it takes to reach the target temperature. However, significant effects cannot be expected due to factors such as wind pressure loss. Furthermore, if a conductive heat transfer type constant temperature bath is used in which the IC package is brought into direct contact with a block that is controlled to a target temperature, the efficiency of heat transfer can be improved compared to the convection heat transfer method described above. However, there are drawbacks such as there is a risk of damaging the IC, and the block shape needs to be processed to match each package, resulting in poor versatility. Furthermore, a method using an infrared heater as a heating source is also considered, but the temperature of the IC package must be directly detected, making it difficult to perform accurate temperature control.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

以上述べた従来の方法はいずれも、単一の恒温槽により
温度制御を行うものであるが、この場合、加熱初期にお
いてICの温度と目標温度との差が大きい場合には熱移
動量が大きいため急速に目標温度に近づくものの、その
差が小さくなるとともに熱移動量が小さくなるため温度
変化が緩やかになって、結局、目標温度に到達するまで
に長時間を要するという欠点を避けることができない。
In all of the conventional methods described above, the temperature is controlled using a single constant temperature bath, but in this case, if the difference between the IC temperature and the target temperature is large in the early stage of heating, the amount of heat transfer is large. Therefore, although the target temperature is rapidly approached, as the difference decreases, the amount of heat transfer decreases, so the temperature change becomes gradual, and the drawback that it takes a long time to reach the target temperature cannot be avoided. .

以上のような問題は被冷却物を冷却して目標温度に到達
させる場合にも生じるものである。
The above-mentioned problems also occur when an object to be cooled is cooled to reach a target temperature.

そこで本発明は、被加熱物あるいは被冷却物を短時間で
精度良く目標温度に到達させることのできる温度制御装
置を提供することを目的とする。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a temperature control device that can accurately cause an object to be heated or cooled to reach a target temperature in a short time.

〔課題を解決するための手段〕[Means to solve the problem]

上記課題の解決は、目標温度より高い温度に設定された
第1の恒温槽と、該第1の恒温槽と仕切り板を介して接
続され目標温度に設定された第2の恒温槽を有する温度
制御装置であって、被加熱物を該第1の恒温槽で加熱し
目標温度に達する前に該第2の恒温槽へ移送して目標温
度に到達させることを特徴とする温度制御装置、あるい
は、目標温度より低い温度に設定された第1の恒温槽と
、該第1の恒温槽と仕切り板を介して接続され目標温度
に設定された第2の恒温槽を有する温度制御装置であっ
て、被冷却物を該第1の恒温槽で冷却し目標温度に達す
る前に該第2の恒温槽へ移送して目標温度に到達させる
ことを特徴とする温度制御装置によって達成される。
The solution to the above problem is to have a first constant temperature chamber set at a temperature higher than the target temperature, and a second constant temperature chamber connected to the first constant temperature chamber via a partition plate and set at the target temperature. A temperature control device, characterized in that the object to be heated is heated in the first thermostatic oven and transferred to the second thermostatic oven to reach the target temperature before reaching the target temperature, or , a temperature control device having a first constant temperature chamber set at a temperature lower than a target temperature, and a second constant temperature chamber connected to the first constant temperature chamber via a partition plate and set at the target temperature. This is achieved by a temperature control device characterized in that the object to be cooled is cooled in the first constant temperature bath, and before reaching the target temperature, is transferred to the second constant temperature bath to reach the target temperature.

〔作 用〕 第1図は本発明に係る温度制御装置の原理を説明するた
めの断面図であり、同図において1は第1の恒温槽、2
は第2の恒温槽、3は仕切り板、4はシャッター、5は
被加熱物、6は被加熱物の搬送機構である。また、第2
図は上記温度制御装置内における被加熱物5の温度変化
を示す図である。
[Function] FIG. 1 is a sectional view for explaining the principle of the temperature control device according to the present invention, in which 1 is a first constant temperature bath, 2 is
3 is a second constant temperature bath, 3 is a partition plate, 4 is a shutter, 5 is an object to be heated, and 6 is a conveyance mechanism for the object to be heated. Also, the second
The figure is a diagram showing the temperature change of the object to be heated 5 in the temperature control device.

前述したように、目標温度TR+に設定された単一の恒
温槽内において被加熱物5を室温から加熱した場合には
、被加熱物5の温度は第2図中の温度曲線Aで示したよ
うに加熱初期には急速に温度上昇が生じるものの、目標
温度TElに近づくとともに温度変化が緩やかとなる。
As mentioned above, when the object to be heated 5 is heated from room temperature in a single thermostatic oven set to the target temperature TR+, the temperature of the object to be heated 5 is as shown by temperature curve A in FIG. Although the temperature rises rapidly in the initial stage of heating, the temperature change becomes gradual as it approaches the target temperature TEL.

本発明では、第1の恒温槽1の温度を目標温度TElよ
り高い温度TAIに設定し、第2の恒温槽2の温度を目
標温度T!+に設定する。そして被加熱物5をまず第1
の恒温槽1に搬入する。この際、温度TAIが目標温度
T0より高いため被加熱物5への熱の移動量が従来より
大きくなり、被加熱物5の温度は第2図中の曲線Bで示
したように温度TA+に向かって従来に比べて短時間で
上昇する。被加熱物5を移動させない場合には、点線で
示した曲線Cに従って目標温度TElを越え、やがて温
度変化が緩やかとなって温度TAIに近づくが、本発明
では、目、標温度TR+に到達する前に仕切り板3に設
けられたシャンク−4を開き搬送機構6によって被加熱
物5を第2の恒温槽2に移送する。このとき、被加熱物
5の温度は目標温度TElに近くなっており、そのため
迅速に目標温装置に到達させることができる。
In the present invention, the temperature of the first constant temperature bath 1 is set to a temperature TAI higher than the target temperature TEL, and the temperature of the second constant temperature bath 2 is set to the target temperature T! Set to +. Then, the object to be heated 5 is first heated.
Transport the sample into thermostatic chamber 1. At this time, since the temperature TAI is higher than the target temperature T0, the amount of heat transferred to the heated object 5 is larger than before, and the temperature of the heated object 5 reaches the temperature TA+ as shown by curve B in FIG. However, it will rise in a shorter time than before. When the object to be heated 5 is not moved, it exceeds the target temperature TEL according to the curve C shown by the dotted line, and eventually the temperature change becomes gradual and approaches the temperature TAI, but in the present invention, the target temperature TR+ is reached. Beforehand, the shank 4 provided on the partition plate 3 is opened, and the object to be heated 5 is transferred to the second constant temperature bath 2 by the transfer mechanism 6. At this time, the temperature of the heated object 5 is close to the target temperature TEl, and therefore the target temperature device can be quickly reached.

第1の恒温槽の設定温度および第2の恒温槽へ移送する
までの時間は被加熱物の目標温度に達する時間が最小と
なるように予め実験的にこれを決めることができる。
The set temperature of the first constant temperature bath and the time required to transfer the heated object to the second constant temperature bath can be determined experimentally in advance so that the time required to reach the target temperature of the heated object is minimized.

目標温度が室温より低い温度T t zである場合には
、第1の恒温槽の温度をTE□より低い温度TA2に設
定し、第2の恒温槽の温度を目標温度TE□に設定する
と、上述の場合と同様に被冷却物の温度は曲線B′で示
したように変化し、従来の温度変化曲線A′に比べてよ
り早く目標温度TE□に到達させることができる。
When the target temperature is a temperature T tz lower than room temperature, the temperature of the first thermostatic oven is set to a temperature TA2 lower than TE□, and the temperature of the second thermostatic oven is set to the target temperature TE□. As in the case described above, the temperature of the object to be cooled changes as shown by curve B', and the target temperature TE□ can be reached more quickly than in the conventional temperature change curve A'.

〔実施例〕〔Example〕

第3図は、パッケージに封入されたICの温度試験を行
うために用いられるICハンドラーに対して本発明に係
る温度制御装置を適用したものである。同図に示したI
Cハンドラー(まいわゆる重力落下型と称されるタイプ
であり、同図(a)はその断面図、同図(b)は同図(
alにおいて矢印Xで指示された方向から見たX矢視平
面図である。
FIG. 3 shows the temperature control device according to the present invention applied to an IC handler used to perform a temperature test on an IC sealed in a package. I shown in the same figure
C handler (also known as the so-called gravity drop type; figure (a) is a cross-sectional view of it, and figure (b) is its figure (
FIG. 3 is a plan view taken in the direction indicated by the arrow X when viewed from the direction indicated by the arrow X in FIG.

まず、IC12は搬入ローダ−1)によって第1の恒温
槽13に搬入される。目標温度より高い温度に設定され
た第1の恒温槽13内で加熱されたIC12の温度が上
昇し目標温度を越える前に、仕切り板15に設けられた
シャッター16を開き搬送機構14によって第2の恒温
槽17に移送する。第2の恒温槽17は目標温度に設定
されている。従ってすでに目標温度に近い温度となって
いるIC12は短時間で安定に目標温度に到達する。上
述の第1の恒温槽13の設定温度および加熱時間は、I
C12が最短時間で目標温度に到達するように予め実験
的に決める。これらの値は第1及び第2の恒温槽の熱容
量、消費電力、加熱方式およびICの熱容量等に依存す
る。
First, the IC 12 is carried into the first thermostatic chamber 13 by a carry-in loader (1). Before the temperature of the IC 12 heated in the first constant temperature bath 13 which is set at a temperature higher than the target temperature rises and exceeds the target temperature, the shutter 16 provided on the partition plate 15 is opened and the second IC 12 is heated by the transport mechanism 14. Transfer to a constant temperature bath 17. The second constant temperature bath 17 is set to a target temperature. Therefore, the IC 12, which has already reached a temperature close to the target temperature, stably reaches the target temperature in a short time. The set temperature and heating time of the first constant temperature bath 13 described above are I
It is determined experimentally in advance so that C12 reaches the target temperature in the shortest possible time. These values depend on the heat capacity of the first and second constant temperature baths, power consumption, heating method, heat capacity of the IC, etc.

第1の恒温槽13および第2の恒温槽17には温度調節
機構19、加熱機構20、送風器21、ノズル22が設
けられており、IC12を加熱する場合には、加熱機構
20により熱せられた風を送風器21で矢印の方向へ循
環させる。また、rcを冷却する場合には、外部からノ
ズル22を通して液化窒素を循環させる。
The first constant temperature bath 13 and the second constant temperature bath 17 are provided with a temperature adjustment mechanism 19, a heating mechanism 20, an air blower 21, and a nozzle 22. When heating the IC 12, the IC 12 is heated by the heating mechanism 20. The air is circulated in the direction of the arrow by the blower 21. In addition, when cooling the rc, liquefied nitrogen is circulated from the outside through the nozzle 22.

目標温度に到達したIC12は、搬送機構14によって
コンタクト部18へ送られ、ここで加圧機構23によっ
てテスター24に接続され自動的に電気特性の測定が行
われる。測定後、IC12はソータ部25へ送られ測定
結果によって良品収納部26あるいは不良品収納部27
に仕分けして収納される。
The IC 12 that has reached the target temperature is sent to the contact section 18 by the transport mechanism 14, where it is connected to the tester 24 by the pressurizing mechanism 23 and its electrical characteristics are automatically measured. After the measurement, the IC 12 is sent to the sorter section 25, and depending on the measurement result, it is sent to the good product storage section 26 or the defective product storage section 27.
It is sorted and stored.

目標温度が室温より低い場合には、第1の恒温槽13を
目標温度より低い温度に設定する他は第30 図と同様な構成によりICを迅速に目標温度に到達させ
ることができる。
When the target temperature is lower than room temperature, the IC can quickly reach the target temperature using the same configuration as in FIG. 30 except that the first constant temperature bath 13 is set at a temperature lower than the target temperature.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明によれば、被加熱物あるいは被冷却
物の温度を目標値に迅速かつ正確に設定することができ
るため、ICの製造あるいは試験工程の時間短縮が可能
となり、スループットの向上とともにICの信頼性の向
上を図る上からも有益である。
As described above, according to the present invention, it is possible to quickly and accurately set the temperature of an object to be heated or cooled to a target value, so that it is possible to shorten the time in the IC manufacturing or testing process, and improve throughput. At the same time, it is also useful for improving the reliability of the IC.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の原理構成図、 第2図は温度変化を示す図、 第3図は本発明の実施例を示す図、 である。 図において、 ■、13は第1の恒温槽、 2.17は第2の恒温槽、 3.15は仕切り板、 4.16はシャッター 5.14は搬送機構、 6.12はIC1 1)は搬入ローダ、 18はコンタクト部、 19は温度調節機構、 20は加熱機構、 21は送風器、 22はノズル、 23は加圧機構、 24はテスター 25はソータ部、 26は良品収納部、 27は不良品収納部、 である。 1 2 剛 紹 FIG. 1 is a diagram of the principle configuration of the present invention. Figure 2 is a diagram showing temperature changes; FIG. 3 is a diagram showing an embodiment of the present invention; It is. In the figure, ■, 13 is the first constant temperature bath; 2.17 is the second constant temperature bath, 3.15 is a partition plate, 4.16 is the shutter 5.14 is a transport mechanism, 6.12 is IC1 1) is a carry-in loader, 18 is a contact part, 19 is a temperature adjustment mechanism; 20 is a heating mechanism; 21 is a blower; 22 is a nozzle; 23 is a pressure mechanism; 24 is a tester 25 is a sorter section, 26 is the good product storage section, 27 is a defective product storage section, It is. 1 2 Tsuyoshi Introduction

Claims (2)

【特許請求の範囲】[Claims] (1)目標温度より高い温度に設定された第1の恒温槽
(1)と、該第1の恒温槽(1)と仕切り板(3)を介
して接続され目標温度に設定された第2の恒温槽(2)
を有する温度制御装置であって、 被加熱物(5)を該第1の恒温槽(1)で加熱し目標温
度に達する前に該第2の恒温槽(2)へ移送して目標温
度に到達させることを特徴とする温度制御装置。
(1) A first constant temperature bath (1) set at a temperature higher than the target temperature, and a second constant temperature bath (1) connected to the first constant temperature bath (1) via a partition plate (3) and set at the target temperature. Thermostatic oven (2)
A temperature control device having an object to be heated (5) in the first thermostatic oven (1), and before reaching the target temperature, transfer it to the second thermostatic oven (2) to reach the target temperature. A temperature control device characterized by:
(2)目標温度より低い温度に設定された第1の恒温槽
(1)と、該第1の恒温槽(1)と仕切り板(3)を介
して接続され目標温度に設定された第2の恒温槽(2)
を有する温度制御装置であって、 被冷却物(5)を該第1の恒温槽(1)で冷却し目標温
度に達する前に該第2の恒温槽(2)へ移送して目標温
度に到達させることを特徴とする温度制御装置。
(2) A first constant temperature bath (1) set at a temperature lower than the target temperature, and a second constant temperature bath (1) connected to the first constant temperature bath (1) via a partition plate (3) and set at the target temperature. Thermostatic oven (2)
A temperature control device comprising: an object to be cooled (5) is cooled in the first constant temperature bath (1) and transferred to the second constant temperature bath (2) before reaching the target temperature to reach the target temperature. A temperature control device characterized by:
JP29679789A 1989-11-15 1989-11-15 Temperature control apparatus Pending JPH03156962A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29679789A JPH03156962A (en) 1989-11-15 1989-11-15 Temperature control apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29679789A JPH03156962A (en) 1989-11-15 1989-11-15 Temperature control apparatus

Publications (1)

Publication Number Publication Date
JPH03156962A true JPH03156962A (en) 1991-07-04

Family

ID=17838262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29679789A Pending JPH03156962A (en) 1989-11-15 1989-11-15 Temperature control apparatus

Country Status (1)

Country Link
JP (1) JPH03156962A (en)

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