JPH03152960A - Heat sink - Google Patents
Heat sinkInfo
- Publication number
- JPH03152960A JPH03152960A JP29272689A JP29272689A JPH03152960A JP H03152960 A JPH03152960 A JP H03152960A JP 29272689 A JP29272689 A JP 29272689A JP 29272689 A JP29272689 A JP 29272689A JP H03152960 A JPH03152960 A JP H03152960A
- Authority
- JP
- Japan
- Prior art keywords
- tin
- gold
- layer
- heat sink
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000010931 gold Substances 0.000 claims abstract description 16
- 229910052737 gold Inorganic materials 0.000 claims abstract description 16
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims abstract description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 150000003608 titanium Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052719 titanium Inorganic materials 0.000 abstract description 6
- 239000010936 titanium Substances 0.000 abstract description 6
- 229910003460 diamond Inorganic materials 0.000 abstract description 4
- 239000010432 diamond Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 229910001128 Sn alloy Inorganic materials 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract 5
- 230000008020 evaporation Effects 0.000 abstract 3
- 238000007740 vapor deposition Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はレーザ・ダイオードなどの半導体素子を載置す
るヒートシンクに関し、特にヒートシンク表面の金属膜
の構成に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heat sink on which a semiconductor element such as a laser diode is mounted, and particularly to the structure of a metal film on the surface of the heat sink.
従来、この種のヒートシンクは第２図に示すように、ダ
イヤモンドあるいはシリコンなどの基体１の表・裏面に
チタン２、白金３、金４の金属層をそれぞれの厚さが５
０ＯＡ 、２００ＯＡ 。Conventionally, this type of heat sink has a metal layer of 2 titanium, 3 platinum, and 4 gold on the front and back surfaces of a substrate 1 made of diamond or silicon, each with a thickness of 55 mm.
0OA, 200OA.
５００ＯＡ程度になる様にスパッタリング法により形成
し、そのあと、表面側に蒸着法により金錫合金層５を形
成していた。It was formed by a sputtering method to have a thickness of about 500 OA, and then a gold-tin alloy layer 5 was formed on the surface side by a vapor deposition method.
第３図に示すように、ヒートシンク７の表面にレーザ・
ダイオード８などの半導体素子をマウントした後に、レ
ーザ・ダイオードなどの半導体素子がマウントされたヒ
ートシンク７をステムリにマウントする都合から、ステ
ムにマウントする温度は半導体素子をマウントする温度
より低くしなければ最初にマウントした半導体素子がス
テムにマウントする時に動いてしまう。その為、ヒート
シンクの裏面は金で仕上げ、低温半田でマウント出来る
ようにしてあり、ヒートシンクの表面（半導体素子がマ
ウントされる側の面）は融点の高い金錫で仕上げている
。ところが、金錫の共晶点は金：錫−８：２であるが、
上述した従来のヒートシンクのように、蒸着法で金錫を
形成すると錫が先に蒸着され易く金銭の表面近傍は金の
量が多くなり、共晶点からずれてしｔう。金銅合金は、
第４図に示す金錫状態図かられかる様に、金の割合が増
えると急激に融点が上がる為、表面が金で仕上げられた
レーザ・ダイオードなどの半導体素子とのぬれ性が悪く
なり、マウンＩ・強度が低下するとともに、ぬれ性が悪
い為熱抵抗も増大し、ヒートシンクとしての役目が低下
する。As shown in FIG. 3, the surface of the heat sink 7 is
After mounting a semiconductor element such as a diode 8, the heat sink 7 on which a semiconductor element such as a laser diode is mounted is mounted on the stem, so the temperature at which it is mounted on the stem must be lower than the temperature at which the semiconductor element is mounted. The semiconductor element mounted on the stem moves when mounted on the stem. Therefore, the back side of the heat sink is finished with gold so that it can be mounted with low-temperature solder, and the front side of the heat sink (the side on which the semiconductor element is mounted) is finished with gold-tin, which has a high melting point. However, the eutectic point of gold and tin is gold:tin -8:2,
When gold-tin is formed by vapor deposition as in the conventional heat sink described above, tin tends to be vapor-deposited first, and the amount of gold near the surface of the money increases, causing a deviation from the eutectic point. Gold-copper alloy is
As can be seen from the gold-tin phase diagram shown in Figure 4, as the proportion of gold increases, the melting point rises rapidly, resulting in poor wettability with semiconductor devices such as laser diodes whose surfaces are finished with gold. The strength of the mount I decreases, and due to poor wettability, the thermal resistance also increases, reducing its role as a heat sink.
本発明のヒートシンクは、熱伝導度の良い基体の表面に
、基体側から順次チタン、白金、金、金錫、錫を積層し
た金属層を備えた構成になっている。The heat sink of the present invention has a structure in which a metal layer in which titanium, platinum, gold, gold-tin, and tin are laminated in order from the base side is provided on the surface of a base body having good thermal conductivity.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例を示すヒートシンクの縦
断面図である。ダイヤモンドチップで成る基体１の両面
にチタン層２、白金層３、金層４をスパッタリングにて
形成し、その後、一方の面に、蒸着法にて錫２０％の金
錫合金を蒸着源として金錫層５を形成する。最後に、金
錫蒸着源の重量の６％程度の重量の錫を蒸着源として蒸
着法にて金錫層上に錫層６を形成する。FIG. 1 is a longitudinal sectional view of a heat sink showing a first embodiment of the present invention. A titanium layer 2, a platinum layer 3, and a gold layer 4 are formed on both sides of a substrate 1 made of a diamond chip by sputtering, and then gold is deposited on one side by a vapor deposition method using a gold-tin alloy containing 20% tin as a vapor deposition source. A tin layer 5 is formed. Finally, a tin layer 6 is formed on the gold-tin layer by a vapor deposition method using tin as a vapor deposition source in an amount of about 6% of the weight of the gold-tin vapor deposition source.
以上説明したように本発明は、ヒートシンクの最表面に
錫の層を形成したので、レーザダイオードなどの半導体
素子をマウントした時に融点を下げる効果があり、かつ
、レーザ・タイオートなどの半導体素子の裏面の金とも
良くなじみ、ぬれ性が良くなり、マウント強度も強くな
り、かつ熱抵抗を小さくできる。As explained above, the present invention has a tin layer formed on the outermost surface of the heat sink, which has the effect of lowering the melting point when a semiconductor element such as a laser diode is mounted, and also has the effect of lowering the melting point of a semiconductor element such as a laser diode. It blends well with the gold on the back side, improving wettability, increasing mounting strength, and reducing thermal resistance.
第１図は本発明のヒートシンクの縦断面図、第２図は従
来のヒートシンクの縦断面図であり、第３図はステムに
ヒートシンクをマウン）〜シた概略図、第４図は金錫状
態図である。
１・・・基体（ダイヤモンド）、２・・チタン層、３・
・白金層、４・・・金層、５・・・金錫層、６・・錫層
、７・・・ヒートシンク、８・・・レーザダイオード、
９・・・ステム。Fig. 1 is a longitudinal sectional view of the heat sink of the present invention, Fig. 2 is a longitudinal sectional view of a conventional heat sink, Fig. 3 is a schematic diagram of the heat sink mounted on the stem, and Fig. 4 is a gold-tin state. It is a diagram. 1...Base (diamond), 2...Titanium layer, 3...
・Platinum layer, 4... Gold layer, 5... Gold tin layer, 6... Tin layer, 7... Heat sink, 8... Laser diode,
9... Stem.
Claims (1)
チタン、白金、金、金錫、錫を積層した金属層を備えて
いることを特徴とするヒートシンク。On one side of the base with good thermal conductivity, from the base side,
A heat sink characterized by having a metal layer made of laminated titanium, platinum, gold, gold tin, and tin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29272689A JPH03152960A (en) | 1989-11-09 | 1989-11-09 | Heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29272689A JPH03152960A (en) | 1989-11-09 | 1989-11-09 | Heat sink |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03152960A true JPH03152960A (en) | 1991-06-28 |
Family
ID=17785526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29272689A Pending JPH03152960A (en) | 1989-11-09 | 1989-11-09 | Heat sink |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03152960A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0633328A1 (en) * | 1993-07-08 | 1995-01-11 | General Electric Company | Method for depositing conductive metal traces on diamond |
-
1989
- 1989-11-09 JP JP29272689A patent/JPH03152960A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0633328A1 (en) * | 1993-07-08 | 1995-01-11 | General Electric Company | Method for depositing conductive metal traces on diamond |
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