JPH03108392A - Purification of excimer laser gas - Google Patents
Purification of excimer laser gasInfo
- Publication number
- JPH03108392A JPH03108392A JP24695489A JP24695489A JPH03108392A JP H03108392 A JPH03108392 A JP H03108392A JP 24695489 A JP24695489 A JP 24695489A JP 24695489 A JP24695489 A JP 24695489A JP H03108392 A JPH03108392 A JP H03108392A
- Authority
- JP
- Japan
- Prior art keywords
- laser gas
- trap
- laser
- removal
- cooled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000746 purification Methods 0.000 title description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000741 silica gel Substances 0.000 claims abstract description 9
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 abstract description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 10
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 description 12
- 229910021536 Zeolite Inorganic materials 0.000 description 7
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 7
- 239000010457 zeolite Substances 0.000 description 7
- 239000000428 dust Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、Ｆ２を含むエキシマレーザガスを精製循環し
再利用るすることに関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to purifying, circulating and reusing excimer laser gas containing F2.
（従来の技術）
レーザガスとしてＦ２を含むエキシマレーザでは、レー
ザガスに含まれるＦ２がきわめて活性であるため、レー
ザ管内の構成物表面と反応し、フッ化物等の多くの不純
物がレーザガス中に発生する。この不純物によってレー
ザ光が吸収される等の原因でレーザ出力が減少し、エキ
シマレーザの長時間運転が不可能になる。(Prior Art) In an excimer laser containing F2 as a laser gas, the F2 contained in the laser gas is extremely active, so it reacts with the surfaces of components in the laser tube, and many impurities such as fluoride are generated in the laser gas. This impurity absorbs the laser light and reduces the laser output, making it impossible to operate the excimer laser for a long time.
各種フッ化物等の主な不純物は、−船釣に沸点が高いこ
とが知られている（１９８１年１０月ベンウェルパブリ
ッシング社発行の文献「レーザフォーカス」参照）。Main impurities such as various fluorides are known to have high boiling points (see the document "Laser Focus" published by Benwell Publishing Co., October 1981).
また、レーザガス中に発生するフッ化物等の不純物はモ
レキュラシーブ５Ａ（米国リンデ社製）等のゼオライト
によってもある程度除去できる。Further, impurities such as fluoride generated in the laser gas can be removed to some extent by zeolite such as Molecular Sieve 5A (manufactured by Linde, USA).
したがって、従来、液体窒素で冷却したコールドトラッ
プにレーザガスを接触させる方法やレーザガスをゼオラ
イトに接触させる方法（例えば特開昭６２−２７９８２
４号公報に記載されている方法）が用いられている。Therefore, conventionally, a method of bringing a laser gas into contact with a cold trap cooled with liquid nitrogen or a method of bringing a laser gas into contact with a zeolite (for example, Japanese Patent Laid-Open No. 62-27982
The method described in Publication No. 4) is used.
（発明が解決しようとする課題）
レーザガス中にＦ２を含むＡｒＦエキシマレーザやＫｒ
Ｆエキシマレーザ等においては、レーザガス中に不純物
として発生する微量のＣＦ４がレーザ出力減少の主原因
であることが確かめられた。例えば、ＡｒＦエキシマレ
ーザの場合、レーザガス中に役１００ｐｐｍのＣＦ４が
発生するとレーザ出力が約４０％も減少してしまう。(Problem to be solved by the invention) ArF excimer laser containing F2 in the laser gas and Kr
In F excimer lasers and the like, it has been confirmed that a trace amount of CF4 generated as an impurity in the laser gas is the main cause of the decrease in laser output. For example, in the case of an ArF excimer laser, if 100 ppm of CF4 is generated in the laser gas, the laser output will decrease by about 40%.
ＣＦ４は沸点が低いため、液体窒素で冷却したコールド
トラップを用いる方法では微量のＣＦ４をほとんど除去
できない。Since CF4 has a low boiling point, trace amounts of CF4 can hardly be removed by a method using a cold trap cooled with liquid nitrogen.
また、レーザガスにゼオライトを接触させる方法でも、
ＣＦ４が０２と同様に極性が低いため完全に除去するこ
とができない。In addition, a method in which zeolite is brought into contact with laser gas can also be used.
Like 02, CF4 has low polarity, so it cannot be completely removed.
したがって、従来の方法では、レーザガス中に発生する
ＣＦ４を完全に除去することができないため、レーザ出
力が時間とともに減少し、エキシマレーザを長時間運転
することが不可能となる。Therefore, in the conventional method, CF4 generated in the laser gas cannot be completely removed, so the laser output decreases over time, making it impossible to operate the excimer laser for a long time.
本発明の目的は、ＣＦ４を完全に除去することのできる
エキシマレーザガスの精製法を提供することにある。An object of the present invention is to provide a method for purifying excimer laser gas that can completely remove CF4.
（課題を解決するための手段）
本発明のエキシマレーザガスの精製法は、Ｆ２を含むレ
ーザガス中のＦ２をＦ２除去トラップによって除去した
残りのレーザガスを０℃以下１９６℃以上に冷却した活
性炭もしくはシリカゲルに接触させることを特徴とする
。(Means for Solving the Problems) In the method for purifying excimer laser gas of the present invention, F2 in the laser gas containing F2 is removed by an F2 removal trap, and the remaining laser gas is heated to activated carbon or silica gel cooled to below 0°C and above 196°C. It is characterized by being brought into contact.
（作用）
レーザガス中に発生したＣＦ４は、０℃以下−１９６℃
以上に冷却した活性炭もしくはシリカゲルに接触させる
ことによってほぼ完全に除去することができる。また、
フッ化物以外の不純物であるＦ２０．ＣＯ２，０２等の
空気成分も、沸点が高いため前期冷却活性炭と接触させ
る方法で除去される。(Function) CF4 generated in the laser gas is below 0℃ -196℃
It can be almost completely removed by contacting with activated carbon or silica gel cooled as described above. Also,
F20, which is an impurity other than fluoride. Air components such as CO2, 02 and the like have high boiling points and are therefore removed by bringing them into contact with the pre-cooled activated carbon.
したがって、高温チタントラップ等のＦ２除去トラップ
でＦ２を含むレーザガス中のＦ２を除去した残りのレー
ザガスを００Ｃ以下−１９６℃以上に冷却した活性炭も
しくはシリカゲルと接触させる本発明の方法によれば、
レーザ出力減少の主原因となる不純物でありきわめて除
去しにくいＣＦ４もほぼ完全に除去できるため、エキシ
マレーザガス中の高価な希ガスであるＮｅ、 Ｋｒ、
Ｘ６等を循環再利用することが可能となる。Therefore, according to the method of the present invention, the remaining laser gas after removing F2 in the F2-containing laser gas with an F2 removal trap such as a high-temperature titanium trap is brought into contact with activated carbon or silica gel cooled to below 00C and above -196°C.
CF4, which is an impurity that is the main cause of laser output reduction and is extremely difficult to remove, can be almost completely removed.
It becomes possible to reuse X6 etc.
この結果、レーザ出力を非常に長時間にわたって安定に
維持することが可能となり、エキシマレーザガス中の高
価な希ガスの消費量を大幅に低減できるため、ランニン
グコストの大幅な低減が達成される。As a result, the laser output can be maintained stably for a very long time, and the consumption of expensive rare gas in the excimer laser gas can be significantly reduced, resulting in a significant reduction in running costs.
（実施例） 次に図面を参照して本発明の実施例を詳細に説明する。(Example) Next, embodiments of the present invention will be described in detail with reference to the drawings.
本発明の第１の実施例を示す第１図のレーザガス精製シ
ステムにおいて、Ｆ２除去トラップ２として４５０℃に
加熱したチタントラップを用いるとともに、活性炭を１
００ｇ充填し液体窒素で一１５０℃に冷却した冷却ゲッ
タートラップ３を使用し、２００ｐｐｍのＣＦ４を含ん
だエキシマレーザ装置１内のレーザガスの精製を行った
結果、レーザガス中のＣＦ４を完全に除去することがで
きた。In the laser gas purification system shown in FIG. 1 showing the first embodiment of the present invention, a titanium trap heated to 450°C is used as the F2 removal trap 2, and activated carbon is
As a result of purifying the laser gas in the excimer laser device 1 containing 200 ppm of CF4 using a cooled getter trap 3 filled with 0.00 g and cooled to -150°C with liquid nitrogen, CF4 in the laser gas was completely removed. was completed.
また、このレーザガス精製システムを用い、レーザガス
を連続的に精製した結果、エキシマレーザ出力は１時間
たってもほとんど減少しなかった。なお、Ｆ２除去トラ
ップ２によって除去されたＦ２はＦ２添加装置４によっ
て補填された。Furthermore, as a result of continuously purifying laser gas using this laser gas purification system, the excimer laser output hardly decreased even after one hour. Note that the F2 removed by the F2 removal trap 2 was supplemented by the F2 addition device 4.
また、シリカゲルを１００ｇ充填し液体窒素で一１５０
℃に冷却した冷却ゲッタートラップ３を使用した場合も
活性炭を用いた場合と同様に、レーザガス中のＣＦ４を
完全に除去することができ、エキシマレーザ出力を約１
時間はぼ一定に維持できた。Also, fill 100g of silica gel and add 150g of silica gel to 150g with liquid nitrogen.
When using the cooled getter trap 3 cooled to
The time was kept more or less constant.
以上述べたように、レーザガスを０℃以上−１９６℃以
下に冷却した活性炭もしくはシリカゲルに接触させる方
法を取ることにより、レーザガス中のＣＦ４をほぼ完全
に除去できるため、レーザ出力を長時間安定に維持する
ことが可能となる。As mentioned above, by bringing the laser gas into contact with activated carbon or silica gel that has been cooled to a temperature above 0°C and below -196°C, CF4 in the laser gas can be almost completely removed, and the laser output can be maintained stably for a long time. It becomes possible to do so.
第２図は、本発明の第２の実施例を示すレーザガス精製
システムである。本実施例では、Ｆ２除去トラップ２で
Ｆ２を除去したレーザガスを最初にゼオライトトラップ
５内に充填されたゼオライトと接触させることにより、
レーザガス中のＣＦ４等の不純物を粗く除去し、次に冷
却ゲッタートラップ３内の００Ｃ以下−１９６以上に冷
却された活性炭もしはシリカゲルに接触させることによ
り、ＣＦ４等の不純物を完全に除去する方法を取ってい
る。FIG. 2 is a laser gas purification system showing a second embodiment of the present invention. In this example, by first bringing the laser gas from which F2 has been removed in the F2 removal trap 2 into contact with the zeolite filled in the zeolite trap 5,
A method of completely removing impurities such as CF4 by roughly removing impurities such as CF4 in the laser gas, and then contacting activated carbon or silica gel cooled to below 00C - above 196C in the cooling getter trap 3. taking it.
この結果、レーザガス中のＣＦ４等の不純物はより完全
に除去されるため、レーザ出力をより長時間安定に維持
することが可能となる。As a result, impurities such as CF4 in the laser gas are more completely removed, making it possible to maintain stable laser output for a longer period of time.
第３図は、本発明の第３の実施例を示すレーザガス精製
システムである。本実施例では、第２図に示した本発明
第２の実施例の構成に加え、ゼオライトトラップ５及び
冷却ゲッタートラップ３で精製したレーザガス最終的に
ダストフィルター６に通すことによってレーザガス中の
ダストも除去する方法を取っている。FIG. 3 is a laser gas purification system showing a third embodiment of the present invention. In this embodiment, in addition to the configuration of the second embodiment of the present invention shown in FIG. 2, the laser gas purified by the zeolite trap 5 and the cooling getter trap 3 is finally passed through the dust filter 6 to remove dust in the laser gas. I am taking steps to remove it.
この結果、ＣＦ４等の気体状の不純物に加えレーザカス
中のダストも除去できるため、より長時間レーザ出力を
安定に維持できる。As a result, dust in the laser scum can be removed in addition to gaseous impurities such as CF4, so that the laser output can be stably maintained for a longer period of time.
（発明の効果）
以上述べたように、本発明の方法によれば、レーザ出力
減少の主原因となる不純物でありきわめて除去しにくい
ＣＦ４もほぼ完全に除去できるため、エキシマレーザ中
の高価な希ガスであるＮｅ、Ｋｒ、 Ｘｅ等の循環再利
用することが可能となる。(Effects of the Invention) As described above, according to the method of the present invention, CF4, which is an impurity that is the main cause of laser output reduction and is extremely difficult to remove, can be almost completely removed. It becomes possible to recycle and reuse gases such as Ne, Kr, and Xe.
この結果、レーザ出力を非常に長時間にわたって安定に
維持することが可能となり、エキシマレーザガス中の高
価な希ガスの消費量を大幅に低減できるため、ランニン
グコストの大幅な低減が達成される。As a result, the laser output can be maintained stably for a very long time, and the consumption of expensive rare gas in the excimer laser gas can be significantly reduced, resulting in a significant reduction in running costs.
第１図、第２図及び第３図は、本発明のそれぞれ第１、
第２及び第３の実施の態様を示す図である。
図において、
１・・・エキシマレーザ装置、２・・・Ｆ２除去トラッ
プ、３・・・冷却ゲッタートラップ、４・・・Ｆ２添加
装置、５・・・ゼオライトトラップ、６・・・ダストフ
ィルターである。FIGS. 1, 2 and 3 illustrate the first and second embodiments of the present invention, respectively.
It is a figure which shows the aspect of 2nd and 3rd implementation. In the figure, 1... excimer laser device, 2... F2 removal trap, 3... cooling getter trap, 4... F2 addition device, 5... zeolite trap, 6... dust filter .
Claims (1)
ップによって除去した残りのレーザガスを０℃以下１９
６℃以上に冷却した活性炭もしくはシリカゲルに接触さ
せることを特徴とするエキシマレーザガスの精製法。F_2 in the laser gas containing F_2 is removed by the F_2 removal trap, and the remaining laser gas is heated to 0°C or lower19.
A method for purifying excimer laser gas, characterized by bringing it into contact with activated carbon or silica gel cooled to 6°C or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24695489A JPH03108392A (en) | 1989-09-21 | 1989-09-21 | Purification of excimer laser gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24695489A JPH03108392A (en) | 1989-09-21 | 1989-09-21 | Purification of excimer laser gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03108392A true JPH03108392A (en) | 1991-05-08 |
Family
ID=17156204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24695489A Pending JPH03108392A (en) | 1989-09-21 | 1989-09-21 | Purification of excimer laser gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03108392A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5417742A (en) * | 1993-12-03 | 1995-05-23 | The Boc Group, Inc. | Removal of perfluorocarbons from gas streams |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63271837A (en) * | 1987-04-28 | 1988-11-09 | San'eisha Mfg Co Ltd | Sf6 decomposition gas adsorbing device for electric equipment |
-
1989
- 1989-09-21 JP JP24695489A patent/JPH03108392A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63271837A (en) * | 1987-04-28 | 1988-11-09 | San'eisha Mfg Co Ltd | Sf6 decomposition gas adsorbing device for electric equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5417742A (en) * | 1993-12-03 | 1995-05-23 | The Boc Group, Inc. | Removal of perfluorocarbons from gas streams |
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