JPH03104210A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH03104210A
JPH03104210A JP24407389A JP24407389A JPH03104210A JP H03104210 A JPH03104210 A JP H03104210A JP 24407389 A JP24407389 A JP 24407389A JP 24407389 A JP24407389 A JP 24407389A JP H03104210 A JPH03104210 A JP H03104210A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
ion implantation
mask
single crystalline
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24407389A
Inventor
Shinichi Kawai
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To form a single crystalline film at a desired position and to easily control the ion implantation amount by covering part of a polycrystalline semiconductor film with an ion implantation preventing mask, ion implanting from above the mask, making the semiconductor film of a region exposed from the ion implantation preventing film amorphous, and further annealing it to recrystallize it.
CONSTITUTION: A polycrystalline semiconductor film 4 ls formed on an insulating base layer 2, and an ion implantation preventing mask 5 made of resist, etc., is formed on the part thereon. Ions are implanted to the film 4, the film of a region exposed from the ion implantation preventing film 5 is made amorphous to form an amorphous layer 7. In this case, since the polycrystal under the film 5 is held in a columnar single crystalline state prevailing before the ion implantation, when the film 4 exposed from the film 5 is annealed to be crystallized, single crystal grains are grown outward at a position along the edge of the mask 5. Accordingly, a single crystalline film 8 having several μm of diameter is formed.
COPYRIGHT: (C)1991,JPO&Japio
JP24407389A 1989-09-19 1989-09-19 Manufacture of semiconductor device Pending JPH03104210A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24407389A JPH03104210A (en) 1989-09-19 1989-09-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24407389A JPH03104210A (en) 1989-09-19 1989-09-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH03104210A true true JPH03104210A (en) 1991-05-01

Family

ID=17113332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24407389A Pending JPH03104210A (en) 1989-09-19 1989-09-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH03104210A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9301811A (en) * 1992-10-28 1994-05-16 Ryoden Semiconductor Syst Eng Thin-film field-effect transistor and method for manufacturing the same, as well as of a semiconductor element which is provided with it.
US5548132A (en) * 1994-10-24 1996-08-20 Micron Technology, Inc. Thin film transistor with large grain size DRW offset region and small grain size source and drain and channel regions
US6072193A (en) * 1997-05-30 2000-06-06 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and semiconductor device using thin-film transistors
US6194255B1 (en) * 1994-06-14 2001-02-27 Semiconductor Energy Laboratry Co. Ltd Method for manufacturing thin-film transistors
US6475840B1 (en) 1993-06-12 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6541793B2 (en) 1997-05-30 2003-04-01 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and semiconductor device using thin-film transistors

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9301811A (en) * 1992-10-28 1994-05-16 Ryoden Semiconductor Syst Eng Thin-film field-effect transistor and method for manufacturing the same, as well as of a semiconductor element which is provided with it.
US5514880A (en) * 1992-10-28 1996-05-07 Mitsubishi Denki Kabushiki Kaisha Field effect thin-film transistor for an SRAM with reduced standby current
US5736438A (en) * 1992-10-28 1998-04-07 Mitsubishi Denki Kabushiki Kaisha Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same
US6475840B1 (en) 1993-06-12 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6194255B1 (en) * 1994-06-14 2001-02-27 Semiconductor Energy Laboratry Co. Ltd Method for manufacturing thin-film transistors
US6743667B2 (en) 1994-06-14 2004-06-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an active matrix type device
US6017782A (en) * 1994-10-24 2000-01-25 Micron Technology, Inc. Thin film transistor and method of forming thin film transistors
US5936262A (en) * 1994-10-24 1999-08-10 Micron Technology, Inc. Thin film transistors
US5904513A (en) * 1994-10-24 1999-05-18 Micron Technology, Inc. Method of forming thin film transistors
US6214652B1 (en) 1994-10-24 2001-04-10 Micron Technology, Inc. Thin film transistors and method of forming thin film transistors
US6420219B2 (en) 1994-10-24 2002-07-16 Micron Technology, Inc. Thin film transistors and method of forming thin film transistors
US5548132A (en) * 1994-10-24 1996-08-20 Micron Technology, Inc. Thin film transistor with large grain size DRW offset region and small grain size source and drain and channel regions
US6541793B2 (en) 1997-05-30 2003-04-01 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and semiconductor device using thin-film transistors
US6072193A (en) * 1997-05-30 2000-06-06 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and semiconductor device using thin-film transistors

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