JPH0298173A - Manufacture of semiconductor memory - Google Patents

Manufacture of semiconductor memory

Info

Publication number
JPH0298173A
JPH0298173A JP25128188A JP25128188A JPH0298173A JP H0298173 A JPH0298173 A JP H0298173A JP 25128188 A JP25128188 A JP 25128188A JP 25128188 A JP25128188 A JP 25128188A JP H0298173 A JPH0298173 A JP H0298173A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
layer
gate electrode
electrode
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25128188A
Inventor
Mitsumasa Ooishi
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To reduce an insulating film in thickness between a floating gate electrode and a control gate electrode and to operate at a low voltage by forming the floating electrode or amorphous silicon.
CONSTITUTION: A field oxide film 2 is formed on a P-type Si semiconductor substrate 1, a gate oxide film 3 is then formed, amorphous Si is deposited on a whole substrate surface, the obtained amorphous Si layer 4 is selectively patterned to form a floating gate electrode, and the layer 4 is further crystallized. In this case, after an oxide film formed on the surface of an Si layer 4' is removed, a gate oxide film 5 is formed. Then, polycrystalline Si 6 is deposited on the whole surface, a photoresist mask 7 is formed on the layer 6, and a control electrode 6, is then formed. The film 5 and the layer 4' are removed, a floating gate electrode 4" is formed, and the floating gate electrode 4' is formed in a self-alignment manner with the electrode 6'. Further, an N+ type source region 9 and a drain region 10 are formed.
COPYRIGHT: (C)1990,JPO&Japio
JP25128188A 1988-10-04 1988-10-04 Manufacture of semiconductor memory Pending JPH0298173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25128188A JPH0298173A (en) 1988-10-04 1988-10-04 Manufacture of semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25128188A JPH0298173A (en) 1988-10-04 1988-10-04 Manufacture of semiconductor memory

Publications (1)

Publication Number Publication Date
JPH0298173A true true JPH0298173A (en) 1990-04-10

Family

ID=17220468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25128188A Pending JPH0298173A (en) 1988-10-04 1988-10-04 Manufacture of semiconductor memory

Country Status (1)

Country Link
JP (1) JPH0298173A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521943B1 (en) * 1997-03-19 2003-02-18 Hitachi, Ltd. Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521943B1 (en) * 1997-03-19 2003-02-18 Hitachi, Ltd. Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture
US6723625B2 (en) 1997-03-19 2004-04-20 Renesas Technology Corporation Semiconductor device having thin electrode laye adjacent gate insulator and method of manufacture

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