JPH0291976A - Manufacture of vertical and groove type mos fet - Google Patents

Manufacture of vertical and groove type mos fet

Info

Publication number
JPH0291976A
JPH0291976A JP63242378A JP24237888A JPH0291976A JP H0291976 A JPH0291976 A JP H0291976A JP 63242378 A JP63242378 A JP 63242378A JP 24237888 A JP24237888 A JP 24237888A JP H0291976 A JPH0291976 A JP H0291976A
Authority
JP
Japan
Prior art keywords
layer
formed
groove
surface
part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63242378A
Inventor
Masahide Kayao
Hirohisa Kitaguchi
Masato Umetani
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Priority to JP63242378A priority Critical patent/JPH0291976A/en
Publication of JPH0291976A publication Critical patent/JPH0291976A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095Body region, i.e. base region, of DMOS transistors or IGBTs

Abstract

PURPOSE:To obtain a FET wherein damage of elements due to breakdown is prevented by using a layer having low resistivity for a layer which corresponds to the base of a parasitic bipolar transistor and wherein grooves are formed, and forming a high resistivity layer at the channel region part in a MOSFET at a groove part. CONSTITUTION:An N-type epitaxial layer 22 is formed on an N-type semiconductor substrate 21. A P-type diffused layer 23 is formed at the surface part of the layer. A first oxide layer 24 is further formed on the surface of the layer 23 by thermal oxidation. Then, with the layer 24 as a mask, a groove 25 is formed with plasma of mixed gas of CF4 and O2. Then, the layer 24 is removed, and P-type epitaxial layer 26 is formed. The layer 26 is made to remain on the side surface of the groove as a high resistivity channel region. A gate oxide film 27 is formed on the surface. Poly Si layers 28 and 29 are formed, and the groove 25 is filled. Thereafter, the parts of the layers 28 and 29 other than the inside of the groove are removed with mixed gas. An N-type diffused layer 30 is formed on the surface of the layer 23 on both sides of the groove 25 and on the upper end part of the layer 26. After an oxide layer 31 is formed on the surface of the layer 30, a contact hold 32 is formed. An Al electrode layer 33 which is connected to the layers 23 and 30 through the hole 32 is formed.
JP63242378A 1988-09-29 1988-09-29 Manufacture of vertical and groove type mos fet Pending JPH0291976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63242378A JPH0291976A (en) 1988-09-29 1988-09-29 Manufacture of vertical and groove type mos fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63242378A JPH0291976A (en) 1988-09-29 1988-09-29 Manufacture of vertical and groove type mos fet

Publications (1)

Publication Number Publication Date
JPH0291976A true JPH0291976A (en) 1990-03-30

Family

ID=17088280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63242378A Pending JPH0291976A (en) 1988-09-29 1988-09-29 Manufacture of vertical and groove type mos fet

Country Status (1)

Country Link
JP (1) JPH0291976A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316959A (en) * 1992-08-12 1994-05-31 Siliconix, Incorporated Trenched DMOS transistor fabrication using six masks
EP0666590A2 (en) * 1994-02-04 1995-08-09 Mitsubishi Denki Kabushiki Kaisha Method of fabricating trenches in a semiconductor device
WO1996035230A1 (en) * 1995-05-01 1996-11-07 National Semiconductor Corporation Method of fabricating self-aligned contact trench dmos transistors
US5578851A (en) * 1994-08-15 1996-11-26 Siliconix Incorporated Trenched DMOS transistor having thick field oxide in termination region
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
FR2738394A1 (en) * 1995-09-06 1997-03-07 Nippon Denso Co A semiconductor device in silicon carbide, and process for its manufacturing
FR2744837A1 (en) * 1996-01-23 1997-08-14 Denso Corp A semiconductor device in silicon carbide and process for its manufacturing
EP0797245A2 (en) * 1996-03-22 1997-09-24 Kabushiki Kaisha Toshiba Method of manufacturing a vertical MOS semiconductor device
US6133587A (en) * 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
US6573534B1 (en) 1995-09-06 2003-06-03 Denso Corporation Silicon carbide semiconductor device
US6869874B2 (en) 2002-05-18 2005-03-22 Hynix Semiconductor Inc. Method for fabricating contact plug with low contact resistance
JP2007059632A (en) * 2005-08-24 2007-03-08 Sanken Electric Co Ltd Semiconductor device and its manufacturing method
JP2007281265A (en) * 2006-04-10 2007-10-25 Mitsubishi Electric Corp Trench mosfet, and its manufacturing method
JP2010003911A (en) * 2008-06-20 2010-01-07 Sanyo Electric Co Ltd Trench gate type transistor and method of manufacturing the same
JP2013247127A (en) * 2012-05-23 2013-12-09 Renesas Electronics Corp Transistor and method of manufacturing the same
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9882044B2 (en) 2014-08-19 2018-01-30 Vishay-Siliconix Edge termination for super-junction MOSFETs
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316959A (en) * 1992-08-12 1994-05-31 Siliconix, Incorporated Trenched DMOS transistor fabrication using six masks
EP0666590A2 (en) * 1994-02-04 1995-08-09 Mitsubishi Denki Kabushiki Kaisha Method of fabricating trenches in a semiconductor device
EP0666590A3 (en) * 1994-02-04 1996-05-08 Mitsubishi Electric Corp Method of fabricating trenches in a semiconductor device.
EP1160872A3 (en) * 1994-02-04 2007-06-20 Mitsubishi Denki Kabushiki Kaisha Trenched semiconductor device
US5578851A (en) * 1994-08-15 1996-11-26 Siliconix Incorporated Trenched DMOS transistor having thick field oxide in termination region
US5639676A (en) * 1994-08-15 1997-06-17 Siliconix Incorporated Trenched DMOS transistor fabrication having thick termination region oxide
US5614751A (en) * 1995-01-10 1997-03-25 Siliconix Incorporated Edge termination structure for power MOSFET
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
WO1996035230A1 (en) * 1995-05-01 1996-11-07 National Semiconductor Corporation Method of fabricating self-aligned contact trench dmos transistors
US5976936A (en) * 1995-09-06 1999-11-02 Denso Corporation Silicon carbide semiconductor device
FR2738394A1 (en) * 1995-09-06 1997-03-07 Nippon Denso Co A semiconductor device in silicon carbide, and process for its manufacturing
US6573534B1 (en) 1995-09-06 2003-06-03 Denso Corporation Silicon carbide semiconductor device
US6020600A (en) * 1995-09-06 2000-02-01 Nippondenso Co., Ltd. Silicon carbide semiconductor device with trench
US5744826A (en) * 1996-01-23 1998-04-28 Denso Corporation Silicon carbide semiconductor device and process for its production
US6133587A (en) * 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
FR2744837A1 (en) * 1996-01-23 1997-08-14 Denso Corp A semiconductor device in silicon carbide and process for its manufacturing
EP0797245A3 (en) * 1996-03-22 1998-05-13 Kabushiki Kaisha Toshiba Method of manufacturing a vertical MOS semiconductor device
EP0797245A2 (en) * 1996-03-22 1997-09-24 Kabushiki Kaisha Toshiba Method of manufacturing a vertical MOS semiconductor device
US6869874B2 (en) 2002-05-18 2005-03-22 Hynix Semiconductor Inc. Method for fabricating contact plug with low contact resistance
JP2007059632A (en) * 2005-08-24 2007-03-08 Sanken Electric Co Ltd Semiconductor device and its manufacturing method
JP2007281265A (en) * 2006-04-10 2007-10-25 Mitsubishi Electric Corp Trench mosfet, and its manufacturing method
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
JP2010003911A (en) * 2008-06-20 2010-01-07 Sanyo Electric Co Ltd Trench gate type transistor and method of manufacturing the same
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9935193B2 (en) 2012-02-09 2018-04-03 Siliconix Technology C. V. MOSFET termination trench
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
JP2013247127A (en) * 2012-05-23 2013-12-09 Renesas Electronics Corp Transistor and method of manufacturing the same
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US10229988B2 (en) 2012-05-30 2019-03-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
US10283587B2 (en) 2014-06-23 2019-05-07 Vishay-Siliconix Modulated super junction power MOSFET devices
US9882044B2 (en) 2014-08-19 2018-01-30 Vishay-Siliconix Edge termination for super-junction MOSFETs
US10340377B2 (en) 2014-08-19 2019-07-02 Vishay-Siliconix Edge termination for super-junction MOSFETs

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