JPH0289586A - Laser trimming device - Google Patents

Laser trimming device

Info

Publication number
JPH0289586A
JPH0289586A JP63242715A JP24271588A JPH0289586A JP H0289586 A JPH0289586 A JP H0289586A JP 63242715 A JP63242715 A JP 63242715A JP 24271588 A JP24271588 A JP 24271588A JP H0289586 A JPH0289586 A JP H0289586A
Authority
JP
Japan
Prior art keywords
plural
laser
beam
wafer
trimming device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63242715A
Inventor
Naoto Sakagami
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP63242715A priority Critical patent/JPH0289586A/en
Publication of JPH0289586A publication Critical patent/JPH0289586A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE:To realize a trimming device having a high throughput by changing a laser beam to plural optical paths, a adjusting the light volume of each beam and positioning each adjusted beam at a prescribed place on a semiconductor wafer. CONSTITUTION:The laser beam 7 is oscillated from a laser oscillator 1 to form image this by an image forming lens 4 on the (semiconductor) wafer 6 to be worked. Correspondingly, a changeover fuse for the prescribed address of a memory set on the wafer 6 to be worked is cut. Here, the laser beam 7 is changed over by an optical path changeover device 8 to the laser beams 7a, 7b for plural optical paths. The light quantities of these beams 7a, 7b are adjusted by plural attenuators 2a, 2b and the laser beams from the attenuators 2a, 2b are positioned by plural positioning units 3a, 3b to be positioned through an image forming lens 4 on the semiconductor wafer 6. By this method, a trimming device having a high throughput can be realized.
JP63242715A 1988-09-27 1988-09-27 Laser trimming device Pending JPH0289586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63242715A JPH0289586A (en) 1988-09-27 1988-09-27 Laser trimming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63242715A JPH0289586A (en) 1988-09-27 1988-09-27 Laser trimming device

Publications (1)

Publication Number Publication Date
JPH0289586A true JPH0289586A (en) 1990-03-29

Family

ID=17093162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63242715A Pending JPH0289586A (en) 1988-09-27 1988-09-27 Laser trimming device

Country Status (1)

Country Link
JP (1) JPH0289586A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5922224A (en) * 1996-02-09 1999-07-13 U.S. Philips Corporation Laser separation of semiconductor elements formed in a wafer of semiconductor material
US7425471B2 (en) 2004-06-18 2008-09-16 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
US7435927B2 (en) 2004-06-18 2008-10-14 Electron Scientific Industries, Inc. Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
US7629234B2 (en) 2004-06-18 2009-12-08 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US7633034B2 (en) 2004-06-18 2009-12-15 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7935941B2 (en) 2004-06-18 2011-05-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US8148211B2 (en) 2004-06-18 2012-04-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US8193468B2 (en) 2001-03-29 2012-06-05 Gsi Group Corporation Methods and systems for precisely relatively positioning a waist of a pulsed laser beam and method and system for controlling energy delivered to a target structure

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5922224A (en) * 1996-02-09 1999-07-13 U.S. Philips Corporation Laser separation of semiconductor elements formed in a wafer of semiconductor material
US8193468B2 (en) 2001-03-29 2012-06-05 Gsi Group Corporation Methods and systems for precisely relatively positioning a waist of a pulsed laser beam and method and system for controlling energy delivered to a target structure
US7425471B2 (en) 2004-06-18 2008-09-16 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
US7435927B2 (en) 2004-06-18 2008-10-14 Electron Scientific Industries, Inc. Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
US7633034B2 (en) 2004-06-18 2009-12-15 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7923306B2 (en) 2004-06-18 2011-04-12 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots
US7935941B2 (en) 2004-06-18 2011-05-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US8148211B2 (en) 2004-06-18 2012-04-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US7629234B2 (en) 2004-06-18 2009-12-08 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling

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