JPH0282564A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0282564A
JPH0282564A JP23551388A JP23551388A JPH0282564A JP H0282564 A JPH0282564 A JP H0282564A JP 23551388 A JP23551388 A JP 23551388A JP 23551388 A JP23551388 A JP 23551388A JP H0282564 A JPH0282564 A JP H0282564A
Authority
JP
Japan
Prior art keywords
pads
ic
ic pellet
pellet
bumps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23551388A
Inventor
Jun Koike
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP23551388A priority Critical patent/JPH0282564A/en
Publication of JPH0282564A publication Critical patent/JPH0282564A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE: To improve a mounting density per unit space substantially by a method wherein pads on the surface of a second IC pellet provided behind a first IC pellet are connected electrically to the pads on the rear of the first IC pellet with bumps.
CONSTITUTION: Holes piercing through a first IC pellet are formed by a laser and the holes are filled with melted solder to form conductors 7 between pads on the surface and rear of the first IC pellet. Bumps 4 are placed on the pads on a second IC pellet and the first IC pellet is placed so as to cover the second IC pellet. The layout positions of the pads 2 on the surface of the second IC pellet are determined in view of the layout positions of the pads 6 on the rear of the first IC pellet. If the pads 2 are connected electrically to the pads 6 with the bumps 4 when the two pellets are laminated, the first IC and the second IC are connected to each other electrically through the pads and bonding is completed.
COPYRIGHT: (C)1990,JPO&Japio
JP23551388A 1988-09-19 1988-09-19 Semiconductor device Pending JPH0282564A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23551388A JPH0282564A (en) 1988-09-19 1988-09-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23551388A JPH0282564A (en) 1988-09-19 1988-09-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0282564A true JPH0282564A (en) 1990-03-23

Family

ID=16987102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23551388A Pending JPH0282564A (en) 1988-09-19 1988-09-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0282564A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1233444A3 (en) * 1992-04-08 2002-12-11 LEEDY, Glenn J. Membrane dielectric isolation ic fabrication
US8928119B2 (en) 1997-04-04 2015-01-06 Glenn J. Leedy Three dimensional structure memory

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1233444A3 (en) * 1992-04-08 2002-12-11 LEEDY, Glenn J. Membrane dielectric isolation ic fabrication
US6682981B2 (en) 1992-04-08 2004-01-27 Elm Technology Corporation Stress controlled dielectric integrated circuit fabrication
US6713327B2 (en) 1992-04-08 2004-03-30 Elm Technology Corporation Stress controlled dielectric integrated circuit fabrication
US6765279B2 (en) 1992-04-08 2004-07-20 Elm Technology Corporation Membrane 3D IC fabrication
US8928119B2 (en) 1997-04-04 2015-01-06 Glenn J. Leedy Three dimensional structure memory
US8933570B2 (en) 1997-04-04 2015-01-13 Elm Technology Corp. Three dimensional structure memory
US9401183B2 (en) 1997-04-04 2016-07-26 Glenn J. Leedy Stacked integrated memory device

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