JPH027423B2 - - Google Patents
Info
- Publication number
- JPH027423B2 JPH027423B2 JP56076959A JP7695981A JPH027423B2 JP H027423 B2 JPH027423 B2 JP H027423B2 JP 56076959 A JP56076959 A JP 56076959A JP 7695981 A JP7695981 A JP 7695981A JP H027423 B2 JPH027423 B2 JP H027423B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- source
- drain
- ion
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 150000002500 ions Chemical class 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 8
- 230000005669 field effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- AZBAQHIVVLQMFX-UHFFFAOYSA-N 4-(2,4-dimethylphenyl)-5-methyl-1,3-thiazol-2-amine Chemical compound S1C(N)=NC(C=2C(=CC(C)=CC=2)C)=C1C AZBAQHIVVLQMFX-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56076959A JPS57191539A (en) | 1981-05-21 | 1981-05-21 | Semiconductor ion sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56076959A JPS57191539A (en) | 1981-05-21 | 1981-05-21 | Semiconductor ion sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57191539A JPS57191539A (en) | 1982-11-25 |
| JPH027423B2 true JPH027423B2 (zh) | 1990-02-19 |
Family
ID=13620318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56076959A Granted JPS57191539A (en) | 1981-05-21 | 1981-05-21 | Semiconductor ion sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57191539A (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3311203A1 (de) * | 1983-03-26 | 1984-10-04 | Dr. Johannes Heidenhain Gmbh, 8225 Traunreut | Verfahren zum reproduzieren einer bezugsposition |
| JPS6082846A (ja) * | 1983-10-12 | 1985-05-11 | Sumitomo Electric Ind Ltd | 電界効果型半導体センサ |
| JPH0345177Y2 (zh) * | 1984-09-05 | 1991-09-24 | ||
| JPS6150262U (zh) * | 1984-09-05 | 1986-04-04 | ||
| JPS63165747A (ja) * | 1986-12-26 | 1988-07-09 | Kanegafuchi Chem Ind Co Ltd | 非晶質半導体イオンセンサ |
| JP4669213B2 (ja) | 2003-08-29 | 2011-04-13 | 独立行政法人科学技術振興機構 | 電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ |
-
1981
- 1981-05-21 JP JP56076959A patent/JPS57191539A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57191539A (en) | 1982-11-25 |
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