JPH0269942A - Ultrathin film transistor and manufacture thereof - Google Patents

Ultrathin film transistor and manufacture thereof

Info

Publication number
JPH0269942A
JPH0269942A JP22283788A JP22283788A JPH0269942A JP H0269942 A JPH0269942 A JP H0269942A JP 22283788 A JP22283788 A JP 22283788A JP 22283788 A JP22283788 A JP 22283788A JP H0269942 A JPH0269942 A JP H0269942A
Authority
JP
Japan
Prior art keywords
formed
source
drain regions
metal
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22283788A
Other versions
JP2567058B2 (en
Inventor
Kenji Sera
Nobuhiro Yokoi
Original Assignee
Nec Corp
Nec Eng Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp, Nec Eng Ltd filed Critical Nec Corp
Priority to JP63222837A priority Critical patent/JP2567058B2/en
Publication of JPH0269942A publication Critical patent/JPH0269942A/en
Application granted granted Critical
Publication of JP2567058B2 publication Critical patent/JP2567058B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Abstract

PURPOSE: To eliminate an improper contact and to improve yield by forming a thin film made of metal or alloy having a high melting point and small reactivity with semiconductor on the lower parts of the active layers of source, drain regions of an ultrathin film transistor TR for a switching element used for a liquid crystal display or the like.
CONSTITUTION: A thin film of high melting point metal is formed 500Å at a position to be of an etching stopper under a contact hole and positions to be desirably formed with source, drain wirings between a channel region in the source, drain regions of an insulating board 1 and the hole. Then, polycrystalline silicon is formed 700Å, and patterned to form an active layer 3 1000Å thick. After a gate insulating film 4, a gate electrode 5 are formed on the layer 3, an impurity is doped by ion implanting 6 to be activated. An interlayer insulating layer 7 is formed, contact holes are formed at the insulating films of gate, source and drain regions, and metal wirings 8 are eventually formed.
COPYRIGHT: (C)1990,JPO&Japio
JP63222837A 1988-09-05 1988-09-05 Ultra-thin film transistor and a method of manufacturing the same Expired - Lifetime JP2567058B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63222837A JP2567058B2 (en) 1988-09-05 1988-09-05 Ultra-thin film transistor and a method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63222837A JP2567058B2 (en) 1988-09-05 1988-09-05 Ultra-thin film transistor and a method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH0269942A true JPH0269942A (en) 1990-03-08
JP2567058B2 JP2567058B2 (en) 1996-12-25

Family

ID=16788684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63222837A Expired - Lifetime JP2567058B2 (en) 1988-09-05 1988-09-05 Ultra-thin film transistor and a method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP2567058B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03297172A (en) * 1990-04-17 1991-12-27 Nec Corp Thin film transistor and manufacture thereof
JPH04230028A (en) * 1990-12-27 1992-08-19 Mitsubishi Electric Corp Semiconductor device
KR100809750B1 (en) * 2001-03-31 2008-03-04 비오이 하이디스 테크놀로지 주식회사 Method for manufacturing of thin film transistor
JP2008235873A (en) * 2007-02-22 2008-10-02 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2013077812A (en) * 2011-09-13 2013-04-25 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62105475A (en) * 1985-11-01 1987-05-15 Nec Corp Thin-film transistor and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62105475A (en) * 1985-11-01 1987-05-15 Nec Corp Thin-film transistor and manufacture thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03297172A (en) * 1990-04-17 1991-12-27 Nec Corp Thin film transistor and manufacture thereof
JPH04230028A (en) * 1990-12-27 1992-08-19 Mitsubishi Electric Corp Semiconductor device
KR100809750B1 (en) * 2001-03-31 2008-03-04 비오이 하이디스 테크놀로지 주식회사 Method for manufacturing of thin film transistor
JP2008235873A (en) * 2007-02-22 2008-10-02 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2014033231A (en) * 2007-02-22 2014-02-20 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2013077812A (en) * 2011-09-13 2013-04-25 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JP2567058B2 (en) 1996-12-25

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