JPH0265268A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH0265268A
JPH0265268A JP63217255A JP21725588A JPH0265268A JP H0265268 A JPH0265268 A JP H0265268A JP 63217255 A JP63217255 A JP 63217255A JP 21725588 A JP21725588 A JP 21725588A JP H0265268 A JPH0265268 A JP H0265268A
Authority
JP
Japan
Prior art keywords
voltage
level
current
power
npn transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63217255A
Other versions
JP2869791B2 (en
Inventor
Masahiro Iwamura
Ikuro Masuda
Tetsuo Nakano
Shigeya Tanaka
Tatsumi Yamauchi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63217255A priority Critical patent/JP2869791B2/en
Publication of JPH0265268A publication Critical patent/JPH0265268A/en
Application granted granted Critical
Publication of JP2869791B2 publication Critical patent/JP2869791B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465Internal voltage generators for integrated circuits, e.g. step down generators
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by G11C11/00
    • G11C5/14Power supply arrangements, e.g. Power down/chip (de)selection, layout of wiring/power grids, multiple supply levels
    • G11C5/147Voltage reference generators, voltage and current regulators ; Internally lowered supply level ; Compensation for voltage drops
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits

Abstract

PURPOSE: To prevent a latch-up from occurring and an unnecessary coupling between a power current and an inner circuit by a method wherein a semiconductor substrate is so constituted as not to serve as a path of the power current.
CONSTITUTION: Provided that a control signal 115 is at '1' level and a reset signal 116 is at '0' level. Here, when the control signal 113 changes at '0' level, a PMOS transistor 102 is turned ON and an NPN transistor 101 is also turned ON. At this time, a power current is supplied from an outer power terminal 111 to an inner circuit 130. Voltage Vout of an inner power output is represented by a formula, Vout=VIN-VBE-VLrp/β, where VIN denotes the voltage of a terminal 112, VBE is the voltage between a base and an emitter of the NPN transistor 101, rp is the ON-resistance of the PMOS transistor 102, β is an amplification factor of the NPN transistor 101, and a current IL is a load current. By making the third term of the above formula small enough, an voltage can be optically set inside an integrated circuit chip 100 through varying the voltage of the outer terminal 112.
COPYRIGHT: (C)1990,JPO&Japio
JP63217255A 1988-08-31 1988-08-31 Semiconductor integrated circuit device and electronic device using the same Expired - Fee Related JP2869791B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63217255A JP2869791B2 (en) 1988-08-31 1988-08-31 Semiconductor integrated circuit device and electronic device using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63217255A JP2869791B2 (en) 1988-08-31 1988-08-31 Semiconductor integrated circuit device and electronic device using the same
KR89012391A KR0132053B1 (en) 1988-08-31 1989-08-30 Semiconductor integrated circuit device and its composite electronic device
US07/401,849 US5153452A (en) 1988-08-31 1989-08-30 Bipolar-MOS IC with internal voltage generator and LSI device with internal voltage generator

Publications (2)

Publication Number Publication Date
JPH0265268A true JPH0265268A (en) 1990-03-05
JP2869791B2 JP2869791B2 (en) 1999-03-10

Family

ID=16701278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63217255A Expired - Fee Related JP2869791B2 (en) 1988-08-31 1988-08-31 Semiconductor integrated circuit device and electronic device using the same

Country Status (3)

Country Link
US (1) US5153452A (en)
JP (1) JP2869791B2 (en)
KR (1) KR0132053B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011180891A (en) * 2010-03-02 2011-09-15 Kawasaki Microelectronics Inc Semiconductor integrated circuit

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5283762A (en) * 1990-05-09 1994-02-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device containing voltage converting circuit and operating method thereof
KR100231393B1 (en) * 1991-04-18 1999-11-15 나시모토 류조 Semiconductor integrated circuit
JP3042012B2 (en) * 1991-04-19 2000-05-15 日本電気株式会社 Power-on reset device
US5490107A (en) * 1991-12-27 1996-02-06 Fujitsu Limited Nonvolatile semiconductor memory
JP3192751B2 (en) * 1992-05-07 2001-07-30 株式会社東芝 Semiconductor device
JP2870312B2 (en) * 1992-07-28 1999-03-17 日本電気株式会社 Adjustment method of semiconductor memory circuit
JPH06177678A (en) * 1992-12-09 1994-06-24 Toshiba Corp Electronic circuit
US5440519A (en) * 1994-02-01 1995-08-08 Micron Semiconductor, Inc. Switched memory expansion buffer
US5467031A (en) * 1994-09-22 1995-11-14 Lsi Logic Corporation 3.3 volt CMOS tri-state driver circuit capable of driving common 5 volt line
US5786720A (en) * 1994-09-22 1998-07-28 Lsi Logic Corporation 5 volt CMOS driver circuit for driving 3.3 volt line
US6092927A (en) * 1994-11-10 2000-07-25 International Rectifier Corp. Temperature detection of power semiconductors performed by a co-packaged analog integrated circuit
JPH08153388A (en) * 1994-11-28 1996-06-11 Mitsubishi Electric Corp Semiconductor storage
EP0715312B1 (en) * 1994-11-30 2002-10-23 SGS-THOMSON MICROELECTRONICS S.r.l. Monolitically integrated generator of a plurality of voltage values
JP3199987B2 (en) 1995-08-31 2001-08-20 株式会社東芝 Semiconductor integrated circuit device and operation verification method thereof
US6057972A (en) * 1995-11-03 2000-05-02 International Business Machines Corporation Current source for a magnetoresistive head with variability and selectable slew rate
US5896338A (en) * 1997-04-11 1999-04-20 Intel Corporation Input/output power supply detection scheme for flash memory
US6628552B1 (en) 1997-04-11 2003-09-30 Intel Corporation Self-configuring input buffer on flash memories
JP3380852B2 (en) 1999-04-13 2003-02-24 松下電器産業株式会社 Semiconductor storage device
EP1073060B1 (en) * 1999-07-28 2005-09-21 SGS-THOMSON MICROELECTRONICS S.r.l. Single supply voltage nonvolatile memory device with hierarchical row decoding
JP3762599B2 (en) * 1999-12-27 2006-04-05 富士通株式会社 Power supply adjustment circuit and semiconductor device using the circuit
JP3601423B2 (en) * 2000-07-27 2004-12-15 株式会社デンソー Semiconductor integrated circuit device
US6920316B2 (en) * 2001-09-04 2005-07-19 Freescale Semiconductor, Inc. High performance integrated circuit regulator with substrate transient suppression
TWI464717B (en) * 2012-09-03 2014-12-11 Hon Hai Prec Ind Co Ltd Time control circuit and electronic device using the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239994A (en) * 1984-05-15 1985-11-28 Seiko Epson Corp Multivalued dynamic random access memory
JPS60256229A (en) * 1984-05-31 1985-12-17 Fujitsu Ltd Da converter
JPS62210724A (en) * 1986-03-12 1987-09-16 Hitachi Ltd Constant voltage circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US512849A (en) * 1894-01-16 Compound intermittent water-meter
US3978473A (en) * 1973-05-01 1976-08-31 Analog Devices, Inc. Integrated-circuit digital-to-analog converter
DE2339150B2 (en) * 1973-08-02 1976-07-15 Monolithically integrated series regulator circuit
US4224536A (en) * 1978-04-24 1980-09-23 Rca Corporation Stabilization of monolithic integrated circuit output levels
US4189909A (en) * 1978-05-22 1980-02-26 Texas Instruments Incorporated Integrated injection logic electronic system with voltage regulator for multiplexed liquid crystal display
JPH058584B2 (en) * 1982-12-13 1993-02-02 Hitachi Ltd
JPH0441504B2 (en) * 1983-03-29 1992-07-08 Tokyo Shibaura Electric Co
JPS6061988A (en) * 1983-09-16 1985-04-09 Toshiba Corp Semiconductor memory
US4754160A (en) * 1984-08-23 1988-06-28 Intersil, Inc. Power supply switching circuit
US4786826A (en) * 1986-02-19 1988-11-22 International Rectifier Corporation Power interface circuit with control chip powered from power chip

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239994A (en) * 1984-05-15 1985-11-28 Seiko Epson Corp Multivalued dynamic random access memory
JPS60256229A (en) * 1984-05-31 1985-12-17 Fujitsu Ltd Da converter
JPS62210724A (en) * 1986-03-12 1987-09-16 Hitachi Ltd Constant voltage circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011180891A (en) * 2010-03-02 2011-09-15 Kawasaki Microelectronics Inc Semiconductor integrated circuit

Also Published As

Publication number Publication date
KR0132053B1 (en) 1998-04-15
KR900004012A (en) 1990-03-27
US5153452A (en) 1992-10-06
JP2869791B2 (en) 1999-03-10

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees