JPH0265126A - Dispersing device - Google Patents

Dispersing device

Info

Publication number
JPH0265126A
JPH0265126A JP21500188A JP21500188A JPH0265126A JP H0265126 A JPH0265126 A JP H0265126A JP 21500188 A JP21500188 A JP 21500188A JP 21500188 A JP21500188 A JP 21500188A JP H0265126 A JPH0265126 A JP H0265126A
Authority
JP
Japan
Prior art keywords
wafer
prism
quartz tube
light guide
circular plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21500188A
Other languages
Japanese (ja)
Inventor
Tomoji Watanabe
智司 渡辺
Takuji Torii
鳥居 卓爾
Takashi Aoyanagi
隆 青柳
Tetsuya Takagaki
哲也 高垣
Shigeki Hirasawa
茂樹 平沢
Toshiyuki Uchino
内野 敏幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21500188A priority Critical patent/JPH0265126A/en
Publication of JPH0265126A publication Critical patent/JPH0265126A/en
Pending legal-status Critical Current

Links

Landscapes

  • Radiation Pyrometers (AREA)

Abstract

PURPOSE:To provide a wafer face and prism face in parallel by fixing a quartz prism on the part in which a part of a circular plate of the same shape as a wafer is cut to place the circular plate on a boat. CONSTITUTION:A part of a cut quartz glass circular plate 17 of the same outer diameter as that of a wafer 2 is welded on a stopper 18. Prisms 20, 20 are sandwiched between prism holding plates 19, 19 and the upper prism 20 is fixed on the cut part of the circular plate 17 to make a face parallel to the circular plate 17. The wafer 2 is placed on a support bar 16 constituting a part of a boat. Thereby radiant light outgone from a point 21 on the wafer 2 is bent by the prisms 20, 20 to enter into a radiation measuring device.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体製造用の拡散装置に関わり、特に、ウェ
ハの温度測定を正確に行うためのウェハとプリズムの位
置決めに好適な構造に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a diffusion device for semiconductor manufacturing, and more particularly to a structure suitable for positioning a wafer and a prism in order to accurately measure the temperature of the wafer.

〔従来の技術〕[Conventional technology]

従来の装置は、特開昭62−105419号公報に記載
のように石英プリズムを保持管により保持して位置をき
める方法であった。
In the conventional apparatus, the position of the quartz prism is determined by holding the quartz prism in a holding tube, as described in Japanese Patent Application Laid-Open No. 62-105419.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記従来技術はウェハ面とプリズム面とを平行に配置す
る点について配慮がされておらず、ウェハ面からの輻射
測定の際に測定上ノイズとなる余分な輻射をプリズム面
にとり込むという問題があった。
The above conventional technology does not take into account the fact that the wafer surface and the prism surface are arranged in parallel, and there is a problem that when measuring radiation from the wafer surface, excess radiation that becomes measurement noise is introduced into the prism surface. Ta.

本発明はウェハ面とプリズム面を平行に設置するプリズ
ム保持構造を提供することを目的とする。
An object of the present invention is to provide a prism holding structure in which a wafer surface and a prism surface are installed in parallel.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成するためにウェハと同一形状の円板を用
い、その一部を切欠いた部分に石英プリズムを固定し、
ボート上にウェハを載置すると同様に1円板を載置する
だけでウェハ面とプリズム面とが平行になるようにした
ものである。
In order to achieve the above purpose, a disk with the same shape as the wafer is used, and a quartz prism is fixed in the cutout part.
In the same way as placing a wafer on a boat, simply placing one circular plate makes the wafer surface and prism surface parallel.

〔作用〕[Effect]

切欠き何円板はウェハと同一形状であるのでボートに載
置した場合、円板はウェハ面とほぼ平行になっている。
The notched disk has the same shape as the wafer, so when placed on a boat, the disk is almost parallel to the wafer surface.

また、円板切欠き部に溶接したプリズム面はプリズム面
と円板とが平行になるよう注意して溶接しである。従っ
て切欠き何円板をボート上に載置した場合ウェハ面とプ
リズム面の平行度が容易に確保される。
Also, the prism surface welded to the disc notch is carefully welded so that the prism surface and the disc are parallel to each other. Therefore, when a circular plate with several notches is placed on a boat, the parallelism between the wafer surface and the prism surface can be easily ensured.

〔実施例〕〔Example〕

以下、本発明の実施例を図面により説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第1図は本発明を適用した拡散装置の概略図である。こ
の図において1は石英管で、その内部に複数枚(例えば
50〜150枚)のウェハ2がボート3に載せられてい
る6ボート3はフォーク4により石英管1内に出し入れ
する。石英管1内のウェハ2は石英管1外に設置された
ヒータ5で加熱する。ヒータ5と石英管1との間には、
均一加熱に好適になるように、壁温分布を一様にする均
熱?1?6がある(均熱管6が無い拡散装置もある)。
FIG. 1 is a schematic diagram of a diffusion device to which the present invention is applied. In this figure, 1 is a quartz tube, and a boat 3 in which a plurality of wafers 2 (for example, 50 to 150 wafers) are placed is moved into and out of the quartz tube 1 by a fork 4. The wafer 2 inside the quartz tube 1 is heated by a heater 5 installed outside the quartz tube 1. Between the heater 5 and the quartz tube 1,
Uniform heating that makes the wall temperature distribution uniform so that it is suitable for uniform heating? 1 to 6 (there are also diffusion devices that do not have a soaking tube 6).

石英’l? 、L内のウェハ2を酸化、拡散処理する場
合には処理ガス人ロアから処理ガスを石英管1内に入れ
る。
Quartz'l? , L, when oxidizing and diffusing the wafers 2, a processing gas is introduced into the quartz tube 1 from the processing gas lower part.

光ガイド8を通ったウェハ2からの輻射光は反応管外の
対物レンズ9で集められ、光ファイバ10を通って輻射
光温度変換器11で温度に変換される。この温度信号が
拡散装置制御部12に入り熱な対14の信号と合わせて
ヒータ5の発熱量制御部13を動作させる。
The radiant light from the wafer 2 that has passed through the light guide 8 is collected by an objective lens 9 outside the reaction tube, passes through an optical fiber 10, and is converted into temperature by a radiant light temperature converter 11. This temperature signal enters the diffuser control section 12 and, together with the signal from the hot pair 14, operates the heat generation amount control section 13 of the heater 5.

第2図は本発明に用いる光ガイドの詳細図である。この
図において、2はウェハで、ボートの一部をなす支持バ
ー16の上に載置しである。17が切欠き付石英ガラス
円板であり、ストッパ18が周方向−ケ所に溶接しであ
る。切欠き付石英ガラス円板17は厚さ、外径がすべて
ウェハ2と同じに作られており(厚さはウェハ2より大
でもよい)、支持バー16の上にウェハ2と同様に載置
することによりウェハ面と平行におくことができる。切
欠き付石英ガラス円板17は一部が切欠いてあり、その
部分にプリズム保持板19.19を溶接しである。プリ
ズム保持板19.19’の間にはプリズム20がはさみ
こまれている。プリズム20.プリズム保持板19.1
9を切付き付石英ガラス円板17に溶接する際プリズム
の一方の面を切欠き付石英ガラス円板17に平行になる
よう溶接しておく。
FIG. 2 is a detailed view of the light guide used in the present invention. In this figure, the wafer 2 is placed on a support bar 16 that forms part of the boat. 17 is a quartz glass disk with a notch, and a stopper 18 is welded at one location in the circumferential direction. The notched quartz glass disk 17 is made to have the same thickness and outer diameter as the wafer 2 (the thickness may be larger than the wafer 2), and is placed on the support bar 16 in the same way as the wafer 2. By doing so, it can be placed parallel to the wafer surface. A part of the notched quartz glass disk 17 is cut out, and a prism holding plate 19, 19 is welded to that part. A prism 20 is sandwiched between the prism holding plates 19 and 19'. Prism 20. Prism holding plate 19.1
When welding the prism 9 to the notched quartz glass disk 17, one surface of the prism is welded parallel to the notched quartz glass disk 17.

このようにすれば、ウェハ2の上の一点21から出た輻
射光はプリズム20によりまげられ。
In this way, the radiation light emitted from one point 21 on the wafer 2 is bent by the prism 20.

22.22’ 、22’の順で進み第1図の対物レンズ
9へ到達する。
It advances in the order of 22, 22' and 22' and reaches the objective lens 9 in FIG.

ストッパ18の位置を周方向に変えることにより、ウェ
ハ2からの輻射光22′の周方向位置を変更することが
でき、第1図に示すように光ガイド8を石英管1の軸方
向3ケ所に配置し、それぞれの場所の輻射光をお互いが
干渉することなく外部へ取りだすことが可能になる。
By changing the position of the stopper 18 in the circumferential direction, the circumferential position of the radiation light 22' from the wafer 2 can be changed, and as shown in FIG. It becomes possible to take out the radiant light from each location to the outside without interfering with each other.

なおウェハ2への金属汚染を避けるため、第2図に示す
部品はウェハ2を除いて石英ガラスまたはシリコンカー
バイト(SiC)、ポリシリコンで製作する。
In order to avoid metal contamination on the wafer 2, the parts shown in FIG. 2, except for the wafer 2, are made of quartz glass, silicon carbide (SiC), or polysilicon.

第1図では対物レンズ9が1個しか図示してないが、複
数個設けてもよい。
Although only one objective lens 9 is shown in FIG. 1, a plurality of objective lenses 9 may be provided.

〔発明の効果〕〔Effect of the invention〕

本発明は、以上説明したように構成されているので以下
に記載されるような効果を奏する。
Since the present invention is configured as described above, it produces the effects described below.

切欠き付石英ガラス円板はウェハと同じ形状であり、ウ
ェハと同様な方法1手順でボート(支持バー)に載置で
きる。従ってウェハ面とプリズム面とを容易に平行にす
ることができ、余分な輻射光(ノイズ)を対物レンズに
取込むことがない。
The notched quartz glass disk has the same shape as the wafer, and can be placed on a boat (support bar) in the same way as the wafer in one step. Therefore, the wafer surface and the prism surface can be easily made parallel, and excess radiation light (noise) is not introduced into the objective lens.

以上のことによりプリズム面とウェハ面とを平行にする
操作が容易に行え、ウェハ温度副室誤差を低減できる。
As a result of the above, the prism surface and the wafer surface can be easily made parallel, and the wafer temperature sub-chamber error can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の装置一実施例を一部断面にて示す斜視
図、第2図は本発明に用いる光ガイドの構成を示す斜視
図である。 1・・・石英管、2・・ウェハ、;3・・・ボート、4
・・・フォーク、5・・・ヒータ、6・・・均熱管、7
・・・処理ガス人口、8・・・光ガイド、9・・・対物
レンズ、10・・・光ファイバ、11・・・輻射光温度
変換器、12・・・拡散装置制御部、13・・・ヒータ
の発熱板、14・・・熱電対。 16・・・支持バー、17・・・切欠き付石英ガラス円
板、18・・ストッパ、19・・・プリズム保持板、2
0・・・プリズム。 7一−−又y工里η゛ス入口 14−一一外電灯
FIG. 1 is a partially sectional perspective view showing an embodiment of the apparatus of the present invention, and FIG. 2 is a perspective view showing the configuration of a light guide used in the present invention. 1...Quartz tube, 2...Wafer,;3...Boat, 4
...Fork, 5... Heater, 6... Soaking tube, 7
... Processing gas population, 8... Light guide, 9... Objective lens, 10... Optical fiber, 11... Radiant light temperature converter, 12... Diffusion device control unit, 13... - Heater plate of heater, 14... thermocouple. 16... Support bar, 17... Quartz glass disc with notch, 18... Stopper, 19... Prism holding plate, 2
0...prism. 71--Material factory entrance 14-11 Outside light

Claims (1)

【特許請求の範囲】 1、石英管と、石英管内に設置した複数枚のウェハを、
石英管外から加熱するヒータを有し、光を屈曲するため
のプリズムおよびその保持材から成る光ガイドと、石英
管入口外に設けた対物レンズおよび絞りと、このレンズ
、絞りに続けて設置された光ファイバと、光ファイバ端
に接続した輻射温度計を備え、ウェハの輻射光を前記光
ガイドを用いて屈曲させて反応管入口外へ導びき、対物
レンズと絞りとを用いて光ファイバに入射させ、輻射温
度計に伝えることにより、ウェハ温度を検知して、その
温度指示値を基に、前記ヒータの発熱量を決定する拡散
装置において、 前記光ガイドをウェハと固形状、同直径の円板の一部を
切欠いて溶接固定し、前記円板をボート上に、ウェハと
同じ方法、手順で載置することにより、ウェハ面と光ガ
イドのプリズム面を平行(あるいは所定の角度)に保持
することを特徴とする拡散装置。
[Claims] 1. A quartz tube and a plurality of wafers installed in the quartz tube,
It has a heater that heats from outside the quartz tube, a light guide consisting of a prism for bending light and its holding material, an objective lens and a diaphragm installed outside the entrance of the quartz tube, and a lens and an aperture installed next to the quartz tube. The radiant light from the wafer is bent using the light guide and guided out of the entrance of the reaction tube, and is then directed to the optical fiber using an objective lens and a diaphragm. In a diffusion device that detects the wafer temperature by transmitting it to a radiation thermometer and determines the amount of heat generated by the heater based on the temperature indication value, the light guide is made of a solid shape and the same diameter as the wafer. By cutting out a part of the disk and fixing it by welding, and placing the disk on a boat in the same manner and procedure as the wafer, the wafer surface and the prism surface of the light guide can be made parallel (or at a predetermined angle). A diffusion device characterized by holding.
JP21500188A 1988-08-31 1988-08-31 Dispersing device Pending JPH0265126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21500188A JPH0265126A (en) 1988-08-31 1988-08-31 Dispersing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21500188A JPH0265126A (en) 1988-08-31 1988-08-31 Dispersing device

Publications (1)

Publication Number Publication Date
JPH0265126A true JPH0265126A (en) 1990-03-05

Family

ID=16665060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21500188A Pending JPH0265126A (en) 1988-08-31 1988-08-31 Dispersing device

Country Status (1)

Country Link
JP (1) JPH0265126A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005164569A (en) * 2003-08-05 2005-06-23 Volkmann Gmbh Vacuum conveying apparatus equipped with weighing device
CN116393845A (en) * 2023-06-08 2023-07-07 山东华美新材料科技股份有限公司 Silicon carbide ceramic wafer boat cutting equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005164569A (en) * 2003-08-05 2005-06-23 Volkmann Gmbh Vacuum conveying apparatus equipped with weighing device
CN116393845A (en) * 2023-06-08 2023-07-07 山东华美新材料科技股份有限公司 Silicon carbide ceramic wafer boat cutting equipment
CN116393845B (en) * 2023-06-08 2023-08-15 山东华美新材料科技股份有限公司 Silicon carbide ceramic wafer boat cutting equipment

Similar Documents

Publication Publication Date Title
KR960013995B1 (en) Method for measuring surface temperature of semiconductor wafer substrate and heat-treating apparatus
TW523845B (en) System and process for calibrating pyrometers in thermal processing chambers
JP4280421B2 (en) Substrate temperature measurement sensor
TW504728B (en) Heating device for heating semiconductor wafers in thermal processing chambers
US6479801B1 (en) Temperature measuring method, temperature control method and processing apparatus
US6860634B2 (en) Temperature measuring method, heat treating device and method, computer program, and radiation thermometer
JP2000208503A (en) Vertical heat treatment device
US6007241A (en) Apparatus and method for measuring substrate temperature
JPH0265126A (en) Dispersing device
JPS63188940A (en) System for heating by light
JPS6037116A (en) Optical irradiating furnace
JP2004020337A (en) Temperature measuring instrument
JPS62105419A (en) Temperature controlling method for diffusing device
WO2009119418A1 (en) Temperature-measuring apparatus, and mounting table structure and heat treatment apparatus having the same
JPH10111186A (en) Method and apparatus for measuring temperature of semiconductor substrate
JP3600873B2 (en) Substrate temperature measurement unit
JPS6358242A (en) Method and instrument for measuring thermal diffusivity
JPH0640027B2 (en) Method for measuring the temperature of an object to be heated in an optical heat treatment apparatus
JPH01114727A (en) Radiation temperature measuring instrument
JPH0448724A (en) Semiconductor heat treatment device
JPH02303024A (en) Semiconductor heat treatment device
JPH06294627A (en) Buckling detection method in continuous heat treatment furnace
JP4137314B2 (en) Pseudo blackbody radiation device and radiation temperature measurement device
JPS6447031U (en)
US6051844A (en) Scanning system for rapid thermal cycle stress/curvature measurement