JPH026218B2 - - Google Patents
Info
- Publication number
- JPH026218B2 JPH026218B2 JP2719884A JP2719884A JPH026218B2 JP H026218 B2 JPH026218 B2 JP H026218B2 JP 2719884 A JP2719884 A JP 2719884A JP 2719884 A JP2719884 A JP 2719884A JP H026218 B2 JPH026218 B2 JP H026218B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- marker
- diameter
- single crystal
- measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 68
- 239000003550 marker Substances 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2719884A JPS60171724A (ja) | 1984-02-17 | 1984-02-17 | マスクレスイオン注入法におけるイオンビ−ム径の測定方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2719884A JPS60171724A (ja) | 1984-02-17 | 1984-02-17 | マスクレスイオン注入法におけるイオンビ−ム径の測定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60171724A JPS60171724A (ja) | 1985-09-05 |
| JPH026218B2 true JPH026218B2 (enrdf_load_stackoverflow) | 1990-02-08 |
Family
ID=12214388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2719884A Granted JPS60171724A (ja) | 1984-02-17 | 1984-02-17 | マスクレスイオン注入法におけるイオンビ−ム径の測定方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60171724A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6232117A (ja) * | 1985-08-06 | 1987-02-12 | S D S Baiotetsuku:Kk | 防菌防黴活性を有するポリエステル樹脂 |
-
1984
- 1984-02-17 JP JP2719884A patent/JPS60171724A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60171724A (ja) | 1985-09-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |