JPH026215B2 - - Google Patents

Info

Publication number
JPH026215B2
JPH026215B2 JP55105627A JP10562780A JPH026215B2 JP H026215 B2 JPH026215 B2 JP H026215B2 JP 55105627 A JP55105627 A JP 55105627A JP 10562780 A JP10562780 A JP 10562780A JP H026215 B2 JPH026215 B2 JP H026215B2
Authority
JP
Japan
Prior art keywords
exposure
subfield
electron beam
exposed
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55105627A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5730331A (en
Inventor
Yasuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10562780A priority Critical patent/JPS5730331A/ja
Publication of JPS5730331A publication Critical patent/JPS5730331A/ja
Publication of JPH026215B2 publication Critical patent/JPH026215B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP10562780A 1980-07-31 1980-07-31 Method for exposure of electron beam Granted JPS5730331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10562780A JPS5730331A (en) 1980-07-31 1980-07-31 Method for exposure of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10562780A JPS5730331A (en) 1980-07-31 1980-07-31 Method for exposure of electron beam

Publications (2)

Publication Number Publication Date
JPS5730331A JPS5730331A (en) 1982-02-18
JPH026215B2 true JPH026215B2 (cs) 1990-02-08

Family

ID=14412713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10562780A Granted JPS5730331A (en) 1980-07-31 1980-07-31 Method for exposure of electron beam

Country Status (1)

Country Link
JP (1) JPS5730331A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116009361B (zh) * 2021-10-22 2025-10-21 迪盛微(江苏)装备科技有限公司 一种曝光方法及曝光设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119866A (en) * 1976-03-31 1977-10-07 Fujitsu Ltd Electronic beam deflection device
JPS559447A (en) * 1978-07-06 1980-01-23 Jeol Ltd Electron ray exposure device

Also Published As

Publication number Publication date
JPS5730331A (en) 1982-02-18

Similar Documents

Publication Publication Date Title
KR100310497B1 (ko) 독특하게위치된얼라인먼트마크를사용하는전자빔리소그래피방법과그얼라인먼트마크를구비하는웨이퍼
JP3335845B2 (ja) 荷電ビーム描画装置及び描画方法
JP2000133567A (ja) 電子ビーム露光方法及び電子ビーム露光装置
EP0024884B1 (en) Method of detecting the position of a substrate using an electron beam
US4443703A (en) Method and apparatus of deflection calibration for a charged particle beam exposure apparatus
EP0130819B1 (en) A method of positioning a beam to a specific portion of a semiconductor wafer
EP0158139B1 (en) Error-corrected corpuscular beam lithography
JP2000252203A (ja) アライメントマーク及びアライメント方法
EP0033138B1 (en) A method for correcting deflection distortions in an apparatus for charged particle lithography
US6352799B1 (en) Charged-particle-beam pattern-transfer methods and apparatus including beam-drift measurement and correction, and device manufacturing methods comprising same
JPH026215B2 (cs)
EP0078578B1 (en) Method of using an electron beam
US4424450A (en) Hybrid moving stage and rastered electron beam lithography system employing approximate correction circuit
JPS62149127A (ja) 荷電ビ−ム露光装置
JP3569273B2 (ja) 荷電ビーム描画装置及び描画方法
JPH0922859A (ja) 電子線露光工程における試料面高さの補正方法
JP2786662B2 (ja) 荷電ビーム描画方法
JPH1154403A (ja) 荷電ビーム描画方法
JP3388066B2 (ja) 電子ビーム露光装置及びこの装置における偏向効率調整方法
JP2892068B2 (ja) 荷電ビーム描画方法
JPH0282515A (ja) 電子ビーム描画方法
JP2786661B2 (ja) 荷電ビーム描画方法
JP3334341B2 (ja) 電子ビーム露光方法
JP2726855B2 (ja) 焦点合わせ方法
JP3405671B2 (ja) 電子ビーム描画装置及びマーク位置の検出方法