JPH0245642U - - Google Patents

Info

Publication number

JPH0245642U

JPH0245642U JP12455188U JP12455188U JPH0245642U JP H0245642 U JPH0245642 U JP H0245642U JP 12455188 U JP12455188 U JP 12455188U JP 12455188 U JP12455188 U JP 12455188U JP H0245642 U JPH0245642 U JP H0245642U

Authority

JP

Japan

Prior art keywords

interlayer insulating

semiconductor device

insulating film

film

silicon oxide

Prior art date

1988-09-22

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

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• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
• 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
• 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
• 239000011229 interlayer Substances 0.000 claims 2
• 239000004065 semiconductor Substances 0.000 claims 2
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
• 229910052782 aluminium Inorganic materials 0.000 description 2
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• 239000000758 substrate Substances 0.000 description 1