JPH0235469B2 - - Google Patents

Info

Publication number
JPH0235469B2
JPH0235469B2 JP56072853A JP7285381A JPH0235469B2 JP H0235469 B2 JPH0235469 B2 JP H0235469B2 JP 56072853 A JP56072853 A JP 56072853A JP 7285381 A JP7285381 A JP 7285381A JP H0235469 B2 JPH0235469 B2 JP H0235469B2
Authority
JP
Japan
Prior art keywords
region
layer
epitaxial layer
conductivity type
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56072853A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5717161A (en
Inventor
Myuraa Uorufugangu
Raihieruto Hansuieruku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5717161A publication Critical patent/JPS5717161A/ja
Publication of JPH0235469B2 publication Critical patent/JPH0235469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP7285381A 1980-05-16 1981-05-14 Method of producing mos and bipolar semiconductor integrated circuits Granted JPS5717161A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803018848 DE3018848A1 (de) 1980-05-16 1980-05-16 Verfahren zur herstellung monolithisch intetgrierter mos- und bipolar-halbleiteranordnungen fuer den vhf- und den uhf-bereich

Publications (2)

Publication Number Publication Date
JPS5717161A JPS5717161A (en) 1982-01-28
JPH0235469B2 true JPH0235469B2 (https=) 1990-08-10

Family

ID=6102649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7285381A Granted JPS5717161A (en) 1980-05-16 1981-05-14 Method of producing mos and bipolar semiconductor integrated circuits

Country Status (2)

Country Link
JP (1) JPS5717161A (https=)
DE (1) DE3018848A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994887A (en) * 1987-11-13 1991-02-19 Texas Instruments Incorporated High voltage merged bipolar/CMOS technology
JPH01226172A (ja) * 1988-03-07 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPH07112024B2 (ja) * 1988-11-10 1995-11-29 株式会社東芝 半導体装置
DE4411869C2 (de) * 1994-04-06 1997-05-15 Siemens Ag Schaltungsanordnung mit einer integrierten Treiberschaltungsanordnung

Also Published As

Publication number Publication date
DE3018848C2 (https=) 1989-02-16
JPS5717161A (en) 1982-01-28
DE3018848A1 (de) 1981-11-26

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