JPH0234190B2 - - Google Patents

Info

Publication number
JPH0234190B2
JPH0234190B2 JP56209911A JP20991181A JPH0234190B2 JP H0234190 B2 JPH0234190 B2 JP H0234190B2 JP 56209911 A JP56209911 A JP 56209911A JP 20991181 A JP20991181 A JP 20991181A JP H0234190 B2 JPH0234190 B2 JP H0234190B2
Authority
JP
Japan
Prior art keywords
layer
diode
reverse recovery
junction
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56209911A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58114468A (ja
Inventor
Kimihiro Muraoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Electric Manufacturing Ltd filed Critical Toyo Electric Manufacturing Ltd
Priority to JP56209911A priority Critical patent/JPS58114468A/ja
Publication of JPS58114468A publication Critical patent/JPS58114468A/ja
Publication of JPH0234190B2 publication Critical patent/JPH0234190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 

Landscapes

  • Thyristors (AREA)
JP56209911A 1981-12-28 1981-12-28 高速ダイオ−ド Granted JPS58114468A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209911A JPS58114468A (ja) 1981-12-28 1981-12-28 高速ダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209911A JPS58114468A (ja) 1981-12-28 1981-12-28 高速ダイオ−ド

Publications (2)

Publication Number Publication Date
JPS58114468A JPS58114468A (ja) 1983-07-07
JPH0234190B2 true JPH0234190B2 (cs) 1990-08-01

Family

ID=16580688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209911A Granted JPS58114468A (ja) 1981-12-28 1981-12-28 高速ダイオ−ド

Country Status (1)

Country Link
JP (1) JPS58114468A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9054066B2 (en) 2012-08-30 2015-06-09 Kabushiki Kaisha Toshiba Semiconductor device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2706072B2 (ja) * 1987-10-02 1998-01-28 株式会社豊田自動織機製作所 ｐｎ接合ダイオード
JPH01281775A (ja) * 1988-05-06 1989-11-13 Mitsubishi Electric Corp 半導体装置
US5278443A (en) * 1990-02-28 1994-01-11 Hitachi, Ltd. Composite semiconductor device with Schottky and pn junctions
JP2590284B2 (ja) * 1990-02-28 1997-03-12 株式会社日立製作所 半導体装置及びその製造方法
DE69842207D1 (en) 1998-06-01 2011-05-12 Mitsubishi Electric Corp Diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9054066B2 (en) 2012-08-30 2015-06-09 Kabushiki Kaisha Toshiba Semiconductor device
US9324815B2 (en) 2012-08-30 2016-04-26 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
JPS58114468A (ja) 1983-07-07

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