JPH0232769B2 - - Google Patents

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Publication number
JPH0232769B2
JPH0232769B2 JP56102147A JP10214781A JPH0232769B2 JP H0232769 B2 JPH0232769 B2 JP H0232769B2 JP 56102147 A JP56102147 A JP 56102147A JP 10214781 A JP10214781 A JP 10214781A JP H0232769 B2 JPH0232769 B2 JP H0232769B2
Authority
JP
Japan
Prior art keywords
film
metal
deposited
capacitor
mpp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56102147A
Other languages
Japanese (ja)
Other versions
JPS583217A (en
Inventor
Mikio Sawamura
Hisashi Hido
Koji Kosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichikon KK
Original Assignee
Nichikon KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichikon KK filed Critical Nichikon KK
Priority to JP10214781A priority Critical patent/JPS583217A/en
Publication of JPS583217A publication Critical patent/JPS583217A/en
Publication of JPH0232769B2 publication Critical patent/JPH0232769B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は金属化フイルムコンデンサに関するも
のである。 近年ポリエステルフイルム(以下PETフイル
ムという)やポリプロピレンフイルム(以下PP
フイルムという)にZn金属やAl金属を蒸着した
コンデンサが使用されるようになつた。PETフ
イルムに対しては、一般的にZn金属が蒸着され
たものが使用されているが、このPETフイルム
を用いたコンデンサにおいては、75〜80℃以上に
なると誘電正接が急激に増加し熱暴走する欠点が
あり、年々使用温度が過酷になつてきているコン
デンサには使用できず、おのずと周囲温度および
電位傾度に限界がある。それに反してPPフイル
ムはフイルム自身の融点以下であれば、誘電正接
は非常に安定しており、特に高温、高電圧使用に
おいてはPPフイルムを使用する傾向にある。 しかし、第1図に示すようにPPフイルムにAl
金属を蒸着したメタライズドフイルム(以下
MPPフイルムという)1を用いたコンデンサに
おいては、印加される電圧が高くなると、コンデ
ンサ端面から発生するコロナにより電極マージン
2側に蒸着されたAl金属が飛散し、またMPPフ
イルム自身ブロツキング作用があり、また絶縁油
などの含浸性が非常に悪いため、空気などのボイ
ドの混入が非常に起こりやすい。このためコロナ
が発生しやすくなり、上述と同様にその部分に蒸
着されたAl金属が飛散し、JIS C4908で規定され
ているコンデンサの耐用性試験における容量減少
率±4%を大幅に上廻る結果が実験的に得られ
た。 また、Zn金属を蒸着したMPPフイルムコンデ
ンサにおいて同様な実験を試みた結果、上述した
Al金属を蒸着したMPPフイルムコンデンサのよ
うな容量減少はほとんどみられなかつたが、コン
デンサの誘電正接が大幅に増大し品質の安定した
コンデンサを得ることはできなかつた。そこでこ
の原因を調査した結果、Zn金属を蒸着したMPP
フイルムコンデンサにおけるコロナ発生は、基本
的には、Al、Zn蒸着MPPフイルムコンデンサと
もかわらないが、コロナを受けた影響に差がある
ことが判明した。 つまりAl蒸着MPPフイルムコンデンサはコロ
ナを受けた時、コロナによるエネルギーにより
Alが飛散しPPフイルムより消失するが、Zn蒸着
MPPフイルムコンデンサは蒸着強度をもたすた
めCuが核付される。このためZn金属の機械的、
電気的ストレスに対する強度が増すため、Alの
場合のようにPPフイルムよりの消失現象は起こ
らないが、ベースフイルムであるPPフイルムを
劣させるため誘電正接を悪くしていることがわか
つた。 そこで本発明者等は上述の点に鑑みて種々実験
を繰返した結果、負荷寿命特性が優れ、信頼性の
高い金属化フイルムコンデンサが得られることを
見出した。 すなわち、本発明の要旨とするところは、Zn
蒸着膜を有するプラスチツクフイルムとAl蒸着
膜を有するプラスチツクフイルムとを積層巻回し
てコンデンサ素子を形成し、該コンデンサ素子の
端部にメタリコンを施こして電極導出部を形成し
たことを特徴とする金属化フイルムコンデンサで
ある。 以下、本発明をさらに詳述する。 第2図はコンデンサ素子の要部展開斜視図で、
Al金属を蒸着したMPPフイルム3とZn金属を蒸
着したMPPフイルム4とを積層巻回してコンデ
ンサ素子を形成し、該コンデンサ素子の端部にメ
タリコンを施こして電極導出部5が形成されたも
のである。 まずAl金属を蒸着したMPPフイルムおよびZn
金属を蒸着したMPPフイルムをそれぞれクリア
試験、絶縁破壊試験、膜抵抗測定および誘電正接
測定を行なつた結果を第1表に示す。
The present invention relates to metallized film capacitors. In recent years, polyester film (hereinafter referred to as PET film) and polypropylene film (hereinafter referred to as PP film)
Capacitors with Zn metal or Al metal deposited on a film (also called film) began to be used. Generally, PET film with Zn metal vapor-deposited is used, but in capacitors using this PET film, the dielectric loss tangent increases rapidly at temperatures above 75 to 80°C, resulting in thermal runaway. However, it cannot be used in capacitors whose operating temperatures are becoming harsher year by year, and there are limits to ambient temperature and potential gradient. On the other hand, the dielectric loss tangent of PP film is very stable as long as it is below the melting point of the film itself, and there is a tendency to use PP film especially when used at high temperatures and high voltages. However, as shown in Figure 1, Al
Metallized film with metal deposited (hereinafter referred to as
In a capacitor using an MPP film (1), when the applied voltage becomes high, the Al metal deposited on the electrode margin 2 side is scattered by the corona generated from the end face of the capacitor, and the MPP film itself has a blocking effect. Furthermore, since the impregnating properties of insulating oil and the like are very poor, air and other voids are very likely to be mixed in. As a result, corona is more likely to occur, and as mentioned above, the Al metal deposited in that area is scattered, resulting in a capacitance reduction rate of ±4% that is significantly higher than the capacitor durability test stipulated by JIS C4908. was obtained experimentally. In addition, as a result of trying a similar experiment on an MPP film capacitor with Zn metal vapor-deposited, the above-mentioned results were obtained.
Although there was almost no decrease in capacitance as with MPP film capacitors with vapor-deposited Al metal, the dielectric loss tangent of the capacitor increased significantly, making it impossible to obtain a capacitor with stable quality. As a result of investigating the cause of this, we found that MPP with evaporated Zn metal
Although the corona occurrence in film capacitors is basically the same as that in Al and Zn evaporated MPP film capacitors, it has been found that there are differences in the effects of corona. In other words, when an Al-deposited MPP film capacitor receives corona, the energy from the corona causes
Al scatters and disappears from the PP film, but Zn is deposited
MPP film capacitors are nucleated with Cu to provide deposition strength. For this reason, the mechanical properties of Zn metal,
Because the strength against electrical stress increases, the phenomenon of disappearance from PP film does not occur as in the case of Al, but it was found that the dielectric loss tangent worsened because it degraded the PP film, which is the base film. In view of the above points, the inventors of the present invention repeatedly conducted various experiments and found that a metallized film capacitor with excellent load life characteristics and high reliability could be obtained. That is, the gist of the present invention is that Zn
A metal characterized in that a capacitor element is formed by laminating and winding a plastic film having a vapor-deposited film and a plastic film having an Al-deposited film, and an electrode lead-out part is formed by applying metallicon to the end of the capacitor element. It is a film capacitor. The present invention will be described in further detail below. Figure 2 is an exploded perspective view of the main parts of the capacitor element.
A capacitor element is formed by laminating and winding an MPP film 3 on which Al metal is vapor-deposited and an MPP film 4 on which Zn metal is vapor-deposited, and an electrode lead-out part 5 is formed by applying metallicon to the end of the capacitor element. It is. First, MPP film with Al metal vapor-deposited and Zn
Table 1 shows the results of clear test, dielectric breakdown test, film resistance measurement, and dielectric loss tangent measurement of MPP films with metal vapor deposited on them.

【表】 第1表においてクリア個数は100VDC/μの電
圧を印加し、2m2中の絶縁個数をかぞえm2当りに
換算した値、絶縁破壊電圧(B.D.V.)値はJIS
C2319、2330、に準じて測定した値を示す。また
誘電正接はコンデンサの誘電正接を示す。Zn金
属を蒸着したMPPフイルムの場合、膜抵抗値が
2Ω/□未満またはAl金属を蒸着したMPPフイ
ルムの場合膜抵抗値が3Ω/□未満のものを使用
すると、MPPフイルムの絶縁欠陥個数が増加す
るとともに、蒸着膜圧が厚くなつているため自己
回復時のエネルギーが大きくなり、このためベー
スフイルムであるPPフイルムの溶融も大きくな
り自己回復がしにくくなる。つまり異常破壊を起
こす確率が大きくなる。またZn金属を蒸着した
MPPフイルムの場合、膜抵抗値が6Ω/□を越
え、Al金属を蒸着したMPPフイルムの場合15
Ω/□を越えたものを使用すると、メタリコンの
接触が悪くなり誘電正接が増加し、またメタリコ
ンの下部より発熱しやすくなり異常破壊を起こす
原因となる。 次に上述とZn金属を蒸着したMPPフイルムの
試料群Bと、Al金属を蒸着したMPPのフイルム
試料群Eとを組合せて第2図に示すように積層巻
回してコンデンサ素子を形成し、該素子の端部に
組成比Pb77wt%、Sn20wt%、Sb1wt%、Zn2wt
%からなる溶融金属を吹付けてメタリコンを施こ
して電極導出部を形成し、パラフイン系ワツクス
を含浸した後、ケースに収納して定格
400WVAC、12μFの金属化フイルムコンデンサ
を製作した。 上記金属化フイルムコンデンサをJIS C4908に
準じ温度80℃、試験電圧60VAC/μにて連続通
電し、24時間後の測定値を初期値とし、500時間
後、1000時間後の静電容量および高温損失率(誘
電正接)を測定し、それぞれの変化率を求めた結
果を第3図および第4図に示す。第4図中誘電正
接は75℃において測定した値である。なお、図中
曲線aおよびbは比較のための試料で、曲線aは
Zn金属を蒸着したMPPフイルムを2枚積層巻回
して製作したコンデンサ、曲線bはAl金属を蒸
着したMPPフイルムを2枚積層巻回して製作し
たコンデンサである。曲線cは本発明の実施例に
よるAl金属を蒸着したMPPフイルムとZn金属を
蒸着したMPPフイルムとを積層巻回して製作し
たコンデンサである。 第3図および第4図から明らかなように本発明
品は誘電正接の変化が少なくかつ容量変化率も規
格値を充分満足し、Zn金属およびAl金属の欠点
を除去した信頼性の高い金属化コンデンサが得ら
れた。 第2表は上述の実施例においてメタリコン用金
属の組成比を種々変えて試験した結果を比較した
ものである。
[Table] In Table 1, the number of clear pieces is the value calculated by applying a voltage of 100VDC/μ, counting the number of insulation pieces in 2 m 2 and converting it per m 2 , and the breakdown voltage (BDV) value is the JIS
Values measured according to C2319, 2330 are shown. Further, the dielectric loss tangent indicates the dielectric loss tangent of the capacitor. If an MPP film with Zn metal vapor deposited has a film resistance of less than 2Ω/□ or an Al metal vapor deposited MPP film has a film resistance of less than 3Ω/□, the number of insulation defects in the MPP film will increase. At the same time, since the thickness of the deposited film is thicker, the energy required for self-healing increases, which increases the melting of the PP film, which is the base film, and makes self-healing difficult. In other words, the probability of abnormal destruction occurring increases. Also, Zn metal was deposited
In the case of MPP film, the membrane resistance value exceeds 6Ω/□, and in the case of MPP film with Al metal vapor deposited, 15
If a material exceeding Ω/□ is used, the contact between the metallicons becomes poor, the dielectric loss tangent increases, and heat is more likely to be generated from the lower part of the metallicon, causing abnormal breakdown. Next, the above-mentioned MPP film sample group B on which Zn metal was vapor-deposited and MPP film sample group E on which Al metal was vapor-deposited were combined and laminated and wound as shown in FIG. 2 to form a capacitor element. Composition ratio Pb77wt%, Sn20wt%, Sb1wt%, Zn2wt at the edge of the element
After spraying molten metal consisting of 10% and applying metallicon to form the electrode lead-out part and impregnating it with paraffin wax, it is stored in a case and rated.
We fabricated a 400WVAC, 12μF metallized film capacitor. The above metallized film capacitor is continuously energized at a temperature of 80℃ and a test voltage of 60VAC/μ according to JIS C4908, and the measured value after 24 hours is taken as the initial value, and the capacitance and high temperature loss after 500 hours and 1000 hours. Figures 3 and 4 show the results of measuring the dielectric loss tangent and determining the respective rates of change. The dielectric loss tangent in FIG. 4 is a value measured at 75°C. In addition, curves a and b in the figure are samples for comparison, and curve a is
The capacitor was manufactured by laminating and winding two MPP films deposited with Zn metal. Curve b is a capacitor manufactured by laminating and winding two MPP films deposited with Al metal. Curve c represents a capacitor manufactured by laminating and winding an MPP film deposited with Al metal and an MPP film deposited with Zn metal according to an embodiment of the present invention. As is clear from Figures 3 and 4, the product of the present invention has a small change in dielectric loss tangent and a rate of change in capacitance that fully satisfies the standard value, and is a highly reliable metallization that eliminates the drawbacks of Zn metal and Al metal. A capacitor was obtained. Table 2 compares the results of tests conducted with various composition ratios of the metal for metallicon in the above-mentioned Examples.

【表】 第2表中断続寿命試験はJIS C4908に準拠して
行なつた。また充放電試験はメタリコン接続部の
耐電流性を評価するためにMPPフイルム長さ方
向1m当り16A流れるように設定し、2秒ON、
2秒OFFの繰返しを10万回行なつた後、1KHzに
おける誘電正接の変動により判定したものであ
る。第2表から試料群Y、Zに区分された組成比
によるメタリコン金属を施こした本発明に係る金
属化フイルムコンデンサは断続寿命試験および充
放電試験においても異常品は発生せず、安定した
特性が得られることが立証された。なお試料群Z
に用いたメタリコン金属はSnの含有量が比較的
多くコスト高になる。 なお、上述の実施例は含浸剤にパラフイン系ワ
ツクスを用いた例について述べたが、ポリエチレ
ン系ワツクス、アタツクチツクポリプロピレン系
ワツクスなど融点が70〜120℃の範囲の固形状絶
縁剤を用いたものについても同様な結果が得られ
た。また固形状絶縁剤を用いず非含浸あるいは液
状絶縁剤を含浸したコンデンサ素子を用いて構成
したものについても同様な結果が得られた。 叙上のように本発明の金属化フイルムコンデン
サは、寿命特性、充放電特性などコンデンサの電
気特性を著しく向上せしめ、工業的ならびに実用
的価値の大なるものである。
[Table] Table 2 The interrupted life test was conducted in accordance with JIS C4908. In addition, in the charge/discharge test, in order to evaluate the current resistance of the metallicon connection part, the flow was set to 16A per 1m in the length direction of the MPP film, and the voltage was turned on for 2 seconds.
After repeating 2 seconds OFF 100,000 times, the judgment was made based on the change in dielectric loss tangent at 1KHz. The metallized film capacitor according to the present invention, which is coated with metallicon metal according to the composition ratios classified into sample groups Y and Z from Table 2, has stable characteristics with no abnormalities occurring in the intermittent life test and charge/discharge test. It has been proven that it can be obtained. In addition, sample group Z
The metallicon metal used for this purpose has a relatively high Sn content, making it expensive. In addition, although the above-mentioned example described an example using paraffin wax as an impregnating agent, it is also possible to use a solid insulating agent with a melting point in the range of 70 to 120°C, such as polyethylene wax or attacking polypropylene wax. Similar results were obtained for . Similar results were also obtained for capacitor elements constructed using capacitor elements that were not impregnated with a solid insulating agent or impregnated with a liquid insulating agent. As mentioned above, the metallized film capacitor of the present invention significantly improves the electrical characteristics of the capacitor, such as life characteristics and charge/discharge characteristics, and is of great industrial and practical value.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の金属化フイルムコンデンサ素子
の要部展開斜視図、第2図は本発明の一実施例の
金属化フイルムコンデンサ素子の要部展開斜視
図、第3図は本発明品と従来品とを比較した金属
化フイルムコンデンサの容量変化率−通電時間特
性図、第4図は本発明品と従来品とを比較した金
属化フイルムコンデンサの誘電正接−通電時間特
性図である。 3:Al金属を蒸着したポリプロピレンフイル
ム、4:Zn金属を蒸着したポリプロピレンフイ
ルム、5:電極導出部。
Fig. 1 is an exploded perspective view of the main parts of a conventional metallized film capacitor element, Fig. 2 is an exploded perspective view of the main parts of a metallized film capacitor element according to an embodiment of the present invention, and Fig. 3 is an exploded perspective view of the main parts of a conventional metallized film capacitor element. FIG. 4 is a diagram showing the dielectric loss tangent versus current conduction time characteristic of a metallized film capacitor comparing the product of the present invention and a conventional product. 3: polypropylene film deposited with Al metal, 4: polypropylene film deposited with Zn metal, 5: electrode lead-out portion.

Claims (1)

【特許請求の範囲】 1 抵抗値が2〜6Ω/□のZn蒸着膜を有する
プラスチツクフイルムと抵抗値が3〜15Ω/□の
Al蒸着膜を有するプラスチツクフイルムとを積
層巻回してなるコンデンサ素子を形成し、該コン
デンサ素子の端部に次の組成からなる金属のメタ
リコンを施して電極導出部を形成したことを特徴
とする金属化フイルムコンデンサ。 Pb:80.5〜73.0重量% Sn:18.0〜22.0重量% Sb:0.5〜2.0重量% Zn:1.0〜3.0重量%
[Claims] 1. A plastic film having a Zn vapor deposited film with a resistance value of 2 to 6 Ω/□ and a plastic film having a resistance value of 3 to 15 Ω/□.
A capacitor element is formed by laminating and winding a plastic film having an Al-deposited film, and an electrode lead-out part is formed by applying metallization having the following composition to the end of the capacitor element. film capacitor. Pb: 80.5-73.0 wt% Sn: 18.0-22.0 wt% Sb: 0.5-2.0 wt% Zn: 1.0-3.0 wt%
JP10214781A 1981-06-29 1981-06-29 Metallized film capacitor Granted JPS583217A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10214781A JPS583217A (en) 1981-06-29 1981-06-29 Metallized film capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10214781A JPS583217A (en) 1981-06-29 1981-06-29 Metallized film capacitor

Publications (2)

Publication Number Publication Date
JPS583217A JPS583217A (en) 1983-01-10
JPH0232769B2 true JPH0232769B2 (en) 1990-07-23

Family

ID=14319626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10214781A Granted JPS583217A (en) 1981-06-29 1981-06-29 Metallized film capacitor

Country Status (1)

Country Link
JP (1) JPS583217A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3312076A1 (en) * 1983-04-02 1984-10-04 O.D.A.M. - Office de Distribution d'Appareils Médicaux, Wissembourg HIGH ENERGY DENSITY CAPACITOR AND METHOD FOR PRODUCING THE SAME
JPS60101734U (en) * 1983-12-14 1985-07-11 ニチコン株式会社 metallized film capacitor
JPH02127023U (en) * 1989-03-29 1990-10-19

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5385365A (en) * 1977-01-03 1978-07-27 Siemens Ag Selffhealing capacitor
JPS5748615B2 (en) * 1978-02-27 1982-10-16

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017890Y2 (en) * 1980-09-03 1985-05-31 日立コンデンサ株式会社 wound film capacitor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5385365A (en) * 1977-01-03 1978-07-27 Siemens Ag Selffhealing capacitor
JPS5748615B2 (en) * 1978-02-27 1982-10-16

Also Published As

Publication number Publication date
JPS583217A (en) 1983-01-10

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