JPH02312287A - Magnetoresistance effect element - Google Patents

Magnetoresistance effect element

Info

Publication number
JPH02312287A
JPH02312287A JP13310989A JP13310989A JPH02312287A JP H02312287 A JPH02312287 A JP H02312287A JP 13310989 A JP13310989 A JP 13310989A JP 13310989 A JP13310989 A JP 13310989A JP H02312287 A JPH02312287 A JP H02312287A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
mr
material layer
induced
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13310989A
Inventor
Akihiro Suzuki
Tomihiko Tatsumi
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Abstract

PURPOSE: To enable a ferromagnetic magnetoresistance material layer to be given an enough bias by a method wherein the product of the saturation magnetization and the thickness of a soft magnetic bias auxiliary layer is specified to that of the ferromagnetic magnetoresistance effect material layer.
CONSTITUTION: A ferromagnetic magnetoresistance effect MR material layer 1 contains Ni, Fe, and Co as main components, where the composition ratio of Ni ranges from 80% to 83% by weight and that of Co ranges from 6% to 9% by weight, and the product of the saturation magnetization and thickness of a soft magnetic bias auxiliary layer 3 is set to be 85-105% of that of the MR material layer 1. A magnetic field 8 induced inside the MR material layer 1 and a magnetic field 10 induced in the soft magnetic bias auxiliary layer 3 by currents 5 and 6 have the same direction, and a magnetic field 7 induced in the auxiliary layer 3 and a magnetic field 9 induced in the MR layer 1 are also in the same direction. At this point, in the region where the product ratio is above 105% or below 85%, a nonlinear distortion increases to more than 0.1 in absolute value. By this setup, the MR layer 1 can be given an optimal bias.
COPYRIGHT: (C)1990,JPO&Japio
JP13310989A 1989-05-26 1989-05-26 Magnetoresistance effect element Pending JPH02312287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13310989A JPH02312287A (en) 1989-05-26 1989-05-26 Magnetoresistance effect element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13310989A JPH02312287A (en) 1989-05-26 1989-05-26 Magnetoresistance effect element

Publications (1)

Publication Number Publication Date
JPH02312287A true true JPH02312287A (en) 1990-12-27

Family

ID=15097026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13310989A Pending JPH02312287A (en) 1989-05-26 1989-05-26 Magnetoresistance effect element

Country Status (1)

Country Link
JP (1) JPH02312287A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0693791A1 (en) * 1994-07-21 1996-01-24 Commissariat A L'energie Atomique Auto-polarized multilayer magnetoresistive transducer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0693791A1 (en) * 1994-07-21 1996-01-24 Commissariat A L'energie Atomique Auto-polarized multilayer magnetoresistive transducer
FR2722918A1 (en) * 1994-07-21 1996-01-26 Commissariat Energie Atomique Self-biased multilayer magnetoresistance sensor

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