JPH0230652A - Reduction inhibitor for dielectric ceramics - Google Patents
Reduction inhibitor for dielectric ceramicsInfo
- Publication number
- JPH0230652A JPH0230652A JP63242952A JP24295288A JPH0230652A JP H0230652 A JPH0230652 A JP H0230652A JP 63242952 A JP63242952 A JP 63242952A JP 24295288 A JP24295288 A JP 24295288A JP H0230652 A JPH0230652 A JP H0230652A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- reduction inhibitor
- inhibitor
- molar ratio
- lead oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003112 inhibitor Substances 0.000 title claims abstract description 24
- 239000000919 ceramic Substances 0.000 title claims description 9
- 229910000464 lead oxide Inorganic materials 0.000 claims abstract description 17
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052788 barium Inorganic materials 0.000 claims abstract description 3
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 3
- 229910052791 calcium Inorganic materials 0.000 claims abstract 2
- 229910052749 magnesium Inorganic materials 0.000 claims abstract 2
- 239000002131 composite material Substances 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 abstract description 17
- 238000009413 insulation Methods 0.000 abstract description 11
- 239000000203 mixture Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 238000001354 calcination Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000001771 impaired effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この発明は還元防止剤、特に組成成分として酸化鉛を含
有する誘電体セラミックス用還元防止剤に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a reduction inhibitor, particularly to a reduction inhibitor for dielectric ceramics containing lead oxide as a component.
〈従来の技術およびその課題〉
酸化鉛系の誘電体材料は、比較的高い誘電率が得られ、
低温で焼成できるため広く利用されている。 ′
一方、酸化鉛系の誘電体材料を用いて積層コンデンサを
製造するに当たっては、各誘電体材料層の間に内部電極
が介在されるが、酸化鉛系の誘電体材料を還元性雰囲気
中で焼成すると、一般に絶縁特性が損なわれるために、
内部電極材料としては酸化性雰囲気中で焼成しても安定
なAg/ Pd系の貴金属が用いられる。<Prior art and its problems> Lead oxide-based dielectric materials have a relatively high dielectric constant;
It is widely used because it can be fired at low temperatures. ′ On the other hand, when manufacturing a multilayer capacitor using lead oxide dielectric material, internal electrodes are interposed between each dielectric material layer, but lead oxide dielectric material is not used in a reducing atmosphere. Firing generally impairs the insulating properties, so
As the material for the internal electrodes, Ag/Pd-based noble metals are used, which are stable even when fired in an oxidizing atmosphere.
しかしながら、Ag/ Pd系の材料は高価であり、ま
たAgのマイグレーシジンにより特性が劣化したり、導
電率が小さいなどの欠点を有している。However, Ag/Pd-based materials are expensive and have drawbacks such as deterioration of characteristics due to Ag migration and low conductivity.
〈発明の目的〉
従って、この発明は酸化鉛系の複合酸化物誘電体材料に
添加することによって還元雰囲気中で焼成した時に、絶
縁抵抗が損なわれるのを防ぐことのできる還元防止剤を
提供することを目的とするものである。<Object of the Invention> Therefore, the present invention provides a reduction inhibitor that can be added to a lead oxide-based composite oxide dielectric material to prevent loss of insulation resistance when fired in a reducing atmosphere. The purpose is to
〈課題を解決するための手段〉
上記の目的を達成するために、この発明は一般式
%式%)
[但し、0.O1≦a≦0.80 (モル比)、RはM
g、 Ca%Sr%Baのうち少な(とも1種]の組成
からなる酸化鉛系複合酸化物誘電体セラミックス用還元
防止剤を提供するものである。<Means for Solving the Problems> In order to achieve the above object, the present invention provides the general formula %) [However, 0. O1≦a≦0.80 (molar ratio), R is M
The present invention provides a reduction inhibitor for lead oxide-based composite oxide dielectric ceramics, which is composed of a small amount (all one kind) of the following: (g) Ca%Sr%Ba.
く作用〉
これらの成分からなる還元防止剤は、主体となる誘電体
材料を焼結するに当たって、予め所定の割合で主成分に
添加され、混合された後成形体とされ、この後焼成プロ
セスにもたらされる。Effect> The reduction inhibitor consisting of these components is added in advance to the main components at a predetermined ratio when sintering the main dielectric material, mixed and formed into a compact, and then subjected to the firing process. brought about.
この場合、上記した還元防止剤は主成分に対して、個々
に添加してもよいが、このほか予め還元防止剤を配合し
ておき、これを熱処理した粉末か、さらに高温に熱処理
して溶融し、その後粉砕してガラス化したものを主成分
に添加混合してもよい。In this case, the above-mentioned reduction inhibitors may be added individually to the main components, but in addition, the reduction inhibitor may be added in advance, and this may be heat-treated as a powder or heat-treated at a higher temperature and melted. However, it may be crushed and vitrified and then added to and mixed with the main component.
この発明にかかる還元防止剤を上記したような組成範囲
に限定したのは次の理由による。The reason why the reduction inhibitor according to the present invention is limited to the above-mentioned composition range is as follows.
即ち、Li0v+ROがo、oi (モル比)未満、あ
るいは0.80(モル比)を越えると、これを添加した
酸化鉛系複合酸化物誘電体材料の絶縁抵抗が1010Ω
cm未満となって非還元性が実現されないからである。That is, when Li0v+RO is less than o, oi (molar ratio) or exceeds 0.80 (molar ratio), the insulation resistance of the lead oxide-based composite oxide dielectric material to which Li0v+RO is added is 1010Ω.
This is because non-reducibility cannot be achieved if the thickness is less than cm.
この還元防止剤の主成分である誘電体材料に添加する割
合は、その主成分である誘電体材料によって異なるが、
0.05〜25.0重量%の範囲が適当である。これは
0.05重量%未満では非還元化が実現されず、一方2
5.0重量%を越えると誘電体特性が著しく損われるか
らである。The proportion of this reduction inhibitor added to the dielectric material, which is the main component, varies depending on the dielectric material, which is the main component.
A range of 0.05 to 25.0% by weight is suitable. This means that if it is less than 0.05% by weight, non-reduction is not achieved;
This is because if the content exceeds 5.0% by weight, the dielectric properties will be significantly impaired.
〈実施例〉 以下、この発明を実施例により詳細に説明する。<Example> Hereinafter, this invention will be explained in detail with reference to Examples.
72 P b (Mg 4 Nb% ) Os 25
Pb (Z n 4 Nby、 ) Oa−3PbT
i0m (モル比)の組成となるように、PbaO4、
MgC01、Nbi On、Ti0gおよびZnOを秤
量し、ボールミルで12時時間式混合したのち、蒸発乾
燥して混合粉末を得た。72 P b (Mg 4 Nb%) Os 25
Pb (Z n 4 Nby, ) Oa-3PbT
PbaO4, so as to have a composition of i0m (molar ratio)
MgC01, Nbi On, Ti0g, and ZnO were weighed, mixed in a ball mill for 12 hours, and then evaporated to dryness to obtain a mixed powder.
得られた粉末を800℃で2時間焼成した後、200メ
ツシユの篩を通過するように粗粉砕して酸化鉛系の誘電
体粉末を準備した。The obtained powder was fired at 800° C. for 2 hours and then coarsely ground to pass through a 200 mesh sieve to prepare a lead oxide dielectric powder.
また、第1表の組成となるように、LiC0,、MgC
O5、CaCO5% 5rCOi 、BaC0a 、B
iasおよびSin。In addition, LiC0, MgC so as to have the composition shown in Table 1
O5, CaCO5% 5rCOi, BaC0a, B
ias and Sin.
を秤量して得られた粉末を、アルミナルツボに入れて1
200℃の温度で1時間放置し、急冷してガラス化した
後200メツシユの篩を通過するように粉砕して還元防
止剤を準備した。Weigh the powder and put it into an aluminum crucible.
The mixture was left at a temperature of 200° C. for 1 hour, rapidly cooled to vitrify, and then ground to pass through a 200-mesh sieve to prepare a reduction inhibitor.
次に第1表に示す割合となるように、酸化鉛系の複合酸
化物誘電体材料に還元防止剤を添加し、これにポリビニ
ルブチラール系のバインダーおよび有機溶媒を加えてボ
ールミルで24時時間式混合した。Next, a reduction inhibitor was added to the lead oxide-based composite oxide dielectric material in the proportions shown in Table 1, a polyvinyl butyral-based binder and an organic solvent were added, and the mixture was heated in a ball mill 24 hours a day. Mixed.
このようにして得たスラリーをドクターブレード法によ
り50umの厚さにグリーンシートに成形した。The slurry thus obtained was formed into a green sheet with a thickness of 50 um by a doctor blade method.
得られたグリーンシート上にCu電極ペーストをスクリ
ーン印刷法で印刷し、乾燥後互いに対向電極となるよう
に積重ね、熱圧着により一体化した。A Cu electrode paste was printed on the obtained green sheet by a screen printing method, and after drying, they were stacked to form opposing electrodes and integrated by thermocompression bonding.
この積層ブロックから個々のコンデンサユニットをブレ
ードで切り出した。Individual capacitor units were cut out from this laminated block using a blade.
切り出したユニットの端面にCu電極ペーストを塗布し
、外部取出し電極とした。Cu electrode paste was applied to the end face of the cut out unit to form an external electrode.
このようにして得られた生ユニットをN2、N2および
H,0の混合ガスを用いて還元性雰囲気に調節した電気
炉に入れ、1000℃で3時間焼成した。The green unit thus obtained was placed in an electric furnace adjusted to a reducing atmosphere using a mixed gas of N2, N2 and H,0, and fired at 1000°C for 3 hours.
この実施例で作成したチップ型積層コンデンサの寸法は
夫々法の通りである。The dimensions of the chip-type multilayer capacitors produced in this example are as specified in each method.
外観寸法 二 幅 4.8 mm、 長さ 5.6
mm厚み 1.2mm
有効誘電体層厚さ(t) : 32μm有効誘電体
層数(N) : 17
−層当たりの対向電極面積(S) : 21.5
mm”また、I KHz、 IVの自動ブリッジで静
電容量を測定し、次式により誘電率(ε)を求めた。External dimensions 2 Width 4.8 mm, length 5.6
mm Thickness: 1.2 mm Effective dielectric layer thickness (t): 32 μm Effective number of dielectric layers (N): 17 - Counter electrode area per layer (S): 21.5
In addition, the capacitance was measured using an automatic bridge at I KHz and IV, and the dielectric constant (ε) was determined using the following formula.
t、= (113XCXt )/ (SXN)= 8.
3 X 10−”X C
絶縁抵抗は高絶縁計により50Vを2分間印加した後の
値を測定した。t,=(113XCXt)/(SXN)=8.
3 x 10-''X C Insulation resistance was measured using a high insulation meter after applying 50V for 2 minutes.
以上の結果を第1表に示した。The above results are shown in Table 1.
上表から、還元防止剤の成分であるL L Oy2+R
Oが1モル%(特許請求の範囲記載のモル比では0、O
lに相当する)未満あるいは80モル%(同じく0.8
0に相当する)を越えると、絶縁抵抗がIQIOΩCm
未満となり、非還元性が実現されないことがわかる。From the above table, L L Oy2+R, which is a component of the reduction inhibitor
O is 1 mol% (0 in the molar ratio stated in the claims, O
) or less than 80 mol% (also equivalent to 0.8
(equivalent to 0), the insulation resistance becomes IQIOΩCm
It can be seen that non-reducibility is not achieved.
また、この還元防止剤の主成分である誘電体材料に添加
する割合が0.05重量%未満でも、絶縁抵抗が101
0Ωcm未満となって非還元性が実現されず、一方25
.0重量%を越えると、誘電率が4000未満となって
誘電特性が著しく損われることがわかる。Furthermore, even if the proportion of this reduction inhibitor added to the dielectric material, which is the main component, is less than 0.05% by weight, the insulation resistance will be 101%.
Less than 0 Ωcm, non-reducibility was not achieved, and on the other hand, 25
.. It can be seen that when it exceeds 0% by weight, the dielectric constant becomes less than 4000 and the dielectric properties are significantly impaired.
尚、上記した実施例では、Pb (Mgy、 Nb−/
、 ) Os −P b (Zn 、hNb% ) O
x PbTiOsからなる酸化鉛を含む誘電体セラミ
ックス材料にこの発明の誘電体セラミックス用還元防止
剤を添加した例について説明したが、この他第2表に示
したような酸化鉛を含む誘電体セラミックス材料にこの
発明の誘電体セラミックス用還元防止剤を添加すること
によって、還元雰囲気中で焼成しても絶縁抵抗の低下が
防止できる。In addition, in the above-mentioned example, Pb (Mgy, Nb-/
, ) Os −P b (Zn, hNb%) O
Although an example has been described in which the reduction inhibitor for dielectric ceramics of the present invention is added to a dielectric ceramic material containing lead oxide made of x PbTiOs, other dielectric ceramic materials containing lead oxide as shown in Table 2 can also be used. By adding the reduction inhibitor for dielectric ceramics of the present invention to the material, a decrease in insulation resistance can be prevented even if the material is fired in a reducing atmosphere.
一方、還元防止剤を添加していないものについては、絶
縁特性が損なわれたり、゛誘電体特性が著しく損われた
。On the other hand, in the case where no reduction inhibitor was added, the insulation properties were impaired and the dielectric properties were significantly impaired.
もちろん、この発明の誘電体セラミックス用還元防止剤
は上記に例示した酸化鉛を含む誘電体セラミックスに限
られるものではなく、そのほかの酸化鉛を含む誘電体セ
ラミックスにも有用である。Of course, the reduction inhibitor for dielectric ceramics of the present invention is not limited to the above-mentioned dielectric ceramics containing lead oxide, but is also useful for other dielectric ceramics containing lead oxide.
〈発明の効果〉
以上詳述したように、この発明にかかる還元防止剤を酸
化鉛系の複合酸化物誘電体材料に添加することにより、
還元雰囲気中で焼成したときに絶縁抵抗が損われるのを
防止することができるのである。<Effects of the Invention> As detailed above, by adding the reduction inhibitor according to the present invention to a lead oxide-based composite oxide dielectric material,
This makes it possible to prevent insulation resistance from being impaired when firing in a reducing atmosphere.
Claims (1)
1_/_2+SiO_2)[但し、0.01≦a≦0.
80(モル比),RはMg、Ca、Sr、Baのうち少
なくとも1種]の組成からなる酸化鉛系複合酸化物誘電
体セラミックス用還元防止剤[Claims] General formula a(LiO_1_/_2+RO)-(1-a)(BO_
1_/_2+SiO_2) [However, 0.01≦a≦0.
80 (molar ratio), R is at least one of Mg, Ca, Sr, and Ba] A reduction inhibitor for lead oxide-based composite oxide dielectric ceramics
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63242952A JPH0637321B2 (en) | 1988-04-06 | 1988-09-27 | Anti-reduction agent for dielectric ceramics |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-86064 | 1988-04-06 | ||
JP8606488 | 1988-04-06 | ||
JP63242952A JPH0637321B2 (en) | 1988-04-06 | 1988-09-27 | Anti-reduction agent for dielectric ceramics |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0230652A true JPH0230652A (en) | 1990-02-01 |
JPH0637321B2 JPH0637321B2 (en) | 1994-05-18 |
Family
ID=26427229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63242952A Expired - Lifetime JPH0637321B2 (en) | 1988-04-06 | 1988-09-27 | Anti-reduction agent for dielectric ceramics |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0637321B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5525991A (en) * | 1992-06-25 | 1996-06-11 | Nippondenso Co., Ltd. | Mobile object identification system |
-
1988
- 1988-09-27 JP JP63242952A patent/JPH0637321B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5525991A (en) * | 1992-06-25 | 1996-06-11 | Nippondenso Co., Ltd. | Mobile object identification system |
Also Published As
Publication number | Publication date |
---|---|
JPH0637321B2 (en) | 1994-05-18 |
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