JPH02301934A - Manufacture of gaseous discharge panel - Google Patents

Manufacture of gaseous discharge panel

Info

Publication number
JPH02301934A
JPH02301934A JP12308789A JP12308789A JPH02301934A JP H02301934 A JPH02301934 A JP H02301934A JP 12308789 A JP12308789 A JP 12308789A JP 12308789 A JP12308789 A JP 12308789A JP H02301934 A JPH02301934 A JP H02301934A
Authority
JP
Japan
Prior art keywords
insulating
insulating layer
layer
mask pattern
glass substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12308789A
Other languages
Japanese (ja)
Other versions
JP2814557B2 (en
Inventor
Toshiyuki Nanto
利之 南都
Teruo Kurai
倉井 輝夫
Masato Suzuki
正人 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12308789A priority Critical patent/JP2814557B2/en
Publication of JPH02301934A publication Critical patent/JPH02301934A/en
Application granted granted Critical
Publication of JP2814557B2 publication Critical patent/JP2814557B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To easily form an insulating bulkhead in a mesh shape with high accuracy by sand-blasting a thick insulating layer formed on a glass substrate with resist mask patterns used. CONSTITUTION:An insulating material mainly composed of SiO2.Al2O3 is apllied on a glass substrate 21, after it has been dried, it is heat-treated while a hard insulating transparent buffer layer 22 the hardness of which is about 1.5 to 2.0 times as much as that of glass with a low fusing point, is formed. Thus, glass paste with a low fusing point is continuously applied on the surface of the layer. Then, the coated layer is dried so as to be heat-treated so that an insulating layer 23 is formed. In the second place, a resist film is applied onto the insulating layer 23, then pattering is processed so that a mask pattern 24 in a mesh shape for demarcating a discharge cell is thereby formed. Successive ly, each insulating section 23a exposed through the mask pattern 24 in a mesh shape is snad-blasted so that the section is ground so as to be removed. The insulating layer section 23a is efficiently struck out by selecting injected grain size, injection pressure, distance from am injection nozzle and the like at the time of sand-blasting.

Description

【発明の詳細な説明】 〔概 要〕 表示用ガス放電パネルの製造方法、特にガス放電パネル
内に構成する個々の放電セルを画定する絶縁性隔壁の形
成方法に関し、 ガラス基板上に形成した厚い絶縁層をレジストマスクパ
ターンを用いたサンドブラスト加工法により、例えばメ
ツシュ状の絶縁性隔壁に容易に、かつ高精度に形成する
ことを目的とし、パネル外囲器となるガラス基板の表面
上に硬質絶縁性の透明緩衝層とその緩衝層上に隔壁形成
用の絶縁層を塗着形成する工程と、該絶縁層上に放電セ
ル画定用のマスクパターンを形成する工程と、該マスク
パターンを介して露出する前記絶縁層部分のみをサンド
ブラストにより研削除去して前記緩衝層上に個々の放電
セルを画定する隔壁を形成する工程とを含み構成する。
[Detailed Description of the Invention] [Summary] This invention relates to a method for manufacturing a gas discharge panel for display, particularly a method for forming insulating partition walls that define individual discharge cells configured within the gas discharge panel. The objective is to easily and accurately form an insulating layer on, for example, a mesh-like insulating partition wall by a sandblasting process using a resist mask pattern. a process of coating and forming an insulating layer for forming barrier ribs on the transparent buffer layer, a process of forming a mask pattern for defining discharge cells on the insulating layer, and a process of exposing the cells through the mask pattern. and removing only the insulating layer portion by sandblasting to form barrier ribs defining individual discharge cells on the buffer layer.

〔産業上の利用分野〕[Industrial application field]

本発明は表示用ガス放電パネルの製造方法に係り、特に
ガス放電パネル内に構成する個々の放電セルを画定する
絶縁性隔壁の形成方法に関するものである。
The present invention relates to a method of manufacturing a gas discharge panel for display use, and more particularly to a method of forming insulating partition walls that define individual discharge cells configured within the gas discharge panel.

ガス放電光を利用して文字や図形を表示するガス放電パ
ネルとして、DC1或いはAC駆動形の対向電極放電タ
イプや面放電タイプ等の種々のものが実用化されている
。これらのガス放電パネルでは、解像度のよい鮮明な表
示像を得るために対向基板間のガス放電ギャップの均一
化、個々の放電セル間の独立性を確保する絶縁性隔壁が
必要とされる。特にカラー表示においてはカラークロス
トークを防止する点で前記隔壁は必要不可欠である。こ
のため、そのような隔壁を個々の放電セル間に位置精度
良く、かつ均一な厚さに形成する方法が要求される。
BACKGROUND ART Various types of gas discharge panels that display characters and graphics using gas discharge light have been put into practical use, such as DC1 or AC driven counter electrode discharge types and surface discharge types. In order to obtain a clear display image with good resolution, these gas discharge panels require insulating partition walls to equalize the gas discharge gap between opposing substrates and ensure independence between individual discharge cells. Particularly in color display, the partition walls are essential for preventing color crosstalk. Therefore, a method is required for forming such barrier ribs with high positional accuracy and uniform thickness between individual discharge cells.

〔従来の技術〕[Conventional technology]

従来、ガス放電パネルにおける対向基板間のガス放電ギ
ャップの均−化及び個々の放電セル間の独立性を確保す
るための絶縁性隔壁の形成方法としては、例えばガス放
電パネルの一種である面放電型ガス放電パネルの場合で
は、第2図(a)及び(b)に示すようにパネル外囲器
を構成する一対のガラス基板1.2の内の、対をなす並
行な走査用電極3a、 3b群上に誘電体層4を介して
、該走査用電極3a、 3b群と直交する方向にアドレ
ス用電極5群等が配列された一方のガラス基板1と対向
する他方のガラス基板2上に、前記一方のガラス基板1
側の対をなす並行な各走査用電極3a、 3bにより構
成される放電セル6に対応して、その放電セル6を画定
するメツシュ状の絶縁性隔壁7を、例えば低融点ガラス
ペーストを用いたスクリーン印刷法等によりパターン形
成し、これを所定温度で焼成することによって設けてい
た。
Conventionally, as a method for forming insulating partition walls to equalize the gas discharge gap between opposing substrates in a gas discharge panel and ensure independence between individual discharge cells, for example, surface discharge, which is a type of gas discharge panel, has been used. In the case of a type gas discharge panel, as shown in FIGS. 2(a) and 2(b), a pair of parallel scanning electrodes 3a of a pair of glass substrates 1.2 constituting the panel envelope, On the other glass substrate 2 facing one glass substrate 1, five groups of address electrodes and the like are arranged in a direction perpendicular to the scanning electrodes 3a and 3b groups, with a dielectric layer 4 interposed on the group 3b. , the one glass substrate 1
Corresponding to the discharge cells 6 constituted by the side pairs of parallel scanning electrodes 3a and 3b, the mesh-shaped insulating partitions 7 defining the discharge cells 6 are made of, for example, a low melting point glass paste. It was provided by forming a pattern using a screen printing method or the like and firing the pattern at a predetermined temperature.

〔発明が解決しようとする課8] しかしながら、上記したような従来の低融点ガラスペー
ストを用いたスクリーン印刷法等によりメンシュ状の絶
縁性隔壁7を形成する方法にあっては、低融点ガラスペ
ーストを一回のスクリーン印刷により塗着した絶縁膜の
膜厚が数μm〜7μm程度であるため、例えば20〜1
00μmの膜厚のメンシュ状の絶縁性隔壁7を形成する
場合には、前記スクリーン印刷を数回〜士数回繰り返し
、重ねて形成する必要があるが、その重ねて形成するた
めに塗着ペーストのダレが生じ、膜厚が厚くなるに従っ
てパターン精度が低下する欠点があった。
[Problem 8 to be solved by the invention] However, in the method of forming the mensch-shaped insulating partition walls 7 by the conventional screen printing method using a low melting point glass paste as described above, it is difficult to use a low melting point glass paste. The thickness of the insulating film applied by one screen printing is about several μm to 7 μm, for example, 20 to 1 μm.
When forming the mensch-like insulating partition walls 7 with a film thickness of 00 μm, it is necessary to repeat the screen printing several times to several times and form them in layers. This has the disadvantage that sag occurs and pattern accuracy decreases as the film thickness increases.

特に放電表示の高密度化、高解像度化のために、前記メ
ツシュ状の絶縁性隔壁7を、例えば0.2mm以下のフ
ァインピッチによるパターンで形成することは前記塗着
ペーストのダレにより困難であった。
In particular, in order to increase the density and resolution of discharge display, it is difficult to form the mesh-like insulating barrier ribs 7 in a pattern with a fine pitch of, for example, 0.2 mm or less due to sagging of the coating paste. Ta.

また、前記表示パネルの大型化に伴ってメンシュ状の絶
縁性隔壁7の形成領域が、50cm口以上と広範囲とも
なるとスクリーンパターンの僅かな伸びによりパターン
ズレが生じ、位置精度及び均一性が低下する問題があっ
た。
Furthermore, as the size of the display panel increases, the formation area of the mensch-like insulating partition wall 7 becomes wider than 50 cm, causing pattern misalignment due to slight elongation of the screen pattern, reducing positional accuracy and uniformity. There was a problem.

そこでかかる問題を解決するために、例えばガラス基板
上の全面に低融点ガラスからなる絶縁層をスクリーン印
刷法及び焼成工程により形成した後、該絶縁層をレジス
トマスクパターンを用いたケミカルエツチング法により
、所定のメツシュ状パターンにパターニングして前記メ
ツシュ状の絶縁性隔壁を形成する方法も試みているが、
この方法では第3図に示すようにガラス基板2上に形成
された絶縁性隔壁11の側面がテーパー状となり、例え
ば100μm程度の膜厚の低融点ガラスからなる絶縁層
を0.3μm程度のファインピッチによるパターンで精
度良く形成することが困難であった。
In order to solve this problem, for example, an insulating layer made of low-melting glass is formed on the entire surface of a glass substrate by a screen printing method and a baking process, and then the insulating layer is etched by a chemical etching method using a resist mask pattern. A method of forming the mesh-like insulating barrier ribs by patterning them into a predetermined mesh-like pattern has also been attempted.
In this method, as shown in FIG. 3, the side surfaces of the insulating partition walls 11 formed on the glass substrate 2 are tapered, and the insulating layer made of low-melting glass with a thickness of about 100 μm is coated with a fine film of about 0.3 μm. It was difficult to form a pattern with high precision using a pitch pattern.

このようなことから、更に前記該絶縁層をレジストマス
クパターンを用いたドライエツチング法、またはサンド
ブラスト法によりバターニングしてメツシュ状の絶縁性
隔壁を形成し、パターン精度を向上することも試みてい
るが、前者のドライエツチング法ではそのドライエツチ
ング処理に極めて長時間を必要とする欠点があり、また
後者のサンドブラスト法では、形成される隔壁でそれぞ
れ囲まれる内部がガラス基板面まで削られて、その内部
の深さが不均一となる欠点があった。
For this reason, attempts have also been made to improve the pattern accuracy by patterning the insulating layer using a dry etching method using a resist mask pattern or by a sandblasting method to form mesh-like insulating partition walls. However, the former dry etching method has the disadvantage that the dry etching process requires an extremely long time, and the latter sandblasting method has the disadvantage that the inside surrounded by the partition walls that are formed is scraped down to the glass substrate surface. There was a drawback that the internal depth was uneven.

本発明は上記した従来の欠点に鑑み、ガラス基板上に形
成した厚い絶縁層をレジストマスクパターンを用いたサ
ンドブラスト加工法により、例えばメツシュ状の絶縁性
隔壁に容易゛に、かつ高精度に形成し得る新規なガス放
電パネルの製造方法を提供することを目的とするもので
ある。
In view of the above-mentioned conventional drawbacks, the present invention enables a thick insulating layer formed on a glass substrate to be easily and precisely formed into, for example, a mesh-like insulating partition wall by a sandblasting process using a resist mask pattern. The object of the present invention is to provide a novel method for manufacturing a gas discharge panel.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は上記した目的を達成するため、パネル外囲器と
なるガラス基板の表面上に硬質絶縁性の透明緩衝層とそ
の緩衝層上に隔壁形成用の絶縁層を塗着形成する工程と
、該絶縁層上に放電セル画定用のマスクパターンを形成
する工程と、該マスクパターンを介して露出する前記絶
縁層部分のみをサンドブラストにより研削除去する工程
を行って、前記緩衝層上に個々の放電セルを画定する隔
壁を形成するように構成する。
In order to achieve the above-mentioned object, the present invention includes the steps of coating and forming a hard insulating transparent buffer layer on the surface of a glass substrate serving as a panel envelope, and an insulating layer for forming partition walls on the buffer layer; A step of forming a mask pattern for defining discharge cells on the insulating layer, and a step of removing only the portion of the insulating layer exposed through the mask pattern by sandblasting are performed to form individual discharges on the buffer layer. The structure is configured to form partition walls that define cells.

〔作 用〕[For production]

本発明ではガラス基板上に放電セル画定用の、例えばメ
ツシュ状隔壁を形成すべき低融点ガラスからなる絶縁層
を、サンドブラストにより低融点ガラスからなる絶縁層
よりも削られ速度が格段に小さいSiO□・AfJ3を
主成分とする°硬質の絶縁性透明緩衝層を挟んで形成し
ているため、放電セル画定用のメツシュ状マスクパター
ンを介して該マスクパターンより露出する該絶縁層部分
を、予め定めたその絶縁層部分が完全に削除される加工
条件によりサンドブラスト処理を行うことによって、前
記透明緩衝層の研削が少なく、精度の良い放電セル画定
用のメツシュ状隔壁を容易にパターニングすることがで
きる。
In the present invention, an insulating layer made of low-melting glass for forming discharge cell definition, for example, mesh-like partition walls on a glass substrate is sandblasted using SiO・Because it is formed with a hard insulating transparent buffer layer containing AfJ3 as the main component, the portion of the insulating layer exposed from the mask pattern through the mesh-like mask pattern for defining discharge cells is predetermined. By performing sandblasting under processing conditions that completely remove the insulating layer portion, the transparent buffer layer requires less grinding, and mesh-like barrier ribs for defining discharge cells can be easily patterned with high precision.

〔実施例〕〔Example〕

以下図面を用いて本発明の実施例について詳細に説明す
る。
Embodiments of the present invention will be described in detail below with reference to the drawings.

第1図(a)〜(d)は本発明に係るガス放電パネルに
おける一方の基板面に構成する放電セル画定用の絶縁性
隔壁の形成方法を工程順に示す要部断面図である。
FIGS. 1(a) to 1(d) are sectional views of essential parts showing, in order of steps, a method for forming insulating barrier ribs for defining discharge cells on one substrate surface of a gas discharge panel according to the present invention.

先ず第1図(a)に示すように例えばガス放電パネルを
構成する一対のガラス基板の内の一方のガラス基板21
上に、SiO□・AI!、z03を主成分とする絶縁材
料、例えば住友化学製のスミセラム(商品名)のような
ペースト状の絶縁材料を塗布し、乾燥後、600°C程
度で熱処理を行って、隔壁を形成すべき低融点ガラスよ
りも約1.5〜2.0倍程度の硬度(モース硬度が6程
度)を有する10μmの膜厚を有する硬質な絶縁性透明
緩衝層22を形成し、その表面に引き続き低融点ガラス
ペーストを塗布する。
First, as shown in FIG. 1(a), one glass substrate 21 of a pair of glass substrates constituting a gas discharge panel, for example.
On top, SiO□・AI! , z03 as the main component, for example, a paste-like insulating material such as Sumiceram (trade name) manufactured by Sumitomo Chemical, is applied, and after drying, heat treatment is performed at about 600 ° C to form partition walls. A hard insulating transparent buffer layer 22 having a thickness of 10 μm and having a hardness approximately 1.5 to 2.0 times as hard as low melting point glass (Mohs hardness is approximately 6) is formed, and a low melting point glass layer 22 is formed on the surface thereof. Apply glass paste.

そしてその塗布層の乾燥及び600″C程度の焼成温度
で熱処理を行って、20〜100μmの膜厚、例えば本
実施例では100μmの膜厚の隔壁を形成すべき絶縁層
23を形成する。
Then, the coating layer is dried and heat treated at a firing temperature of about 600''C to form the insulating layer 23 that is to form the partition wall and has a thickness of 20 to 100 μm, for example, 100 μm in this embodiment.

次に第1図(b)に示すように前記絶縁層23上に、レ
ジスト膜を塗布し、該レジスト膜を露光・現像工程によ
ってパターニングを行って放電セル画定用のメツシュ状
マスクパターン24を形成する。
Next, as shown in FIG. 1(b), a resist film is applied on the insulating layer 23, and the resist film is patterned by an exposure and development process to form a mesh-like mask pattern 24 for defining discharge cells. do.

次に第1図(C)に示すように該メツシュ状マスクパタ
ーン24を介して露出する各絶縁層部分23aにサンド
ブラスト処理を施してその部分を研削除去する。
Next, as shown in FIG. 1C, each insulating layer portion 23a exposed through the mesh-like mask pattern 24 is sandblasted to be polished away.

このサンドブラスト処理に際しては、前記硬質な絶縁性
透明緩衝層22のサンドブラストによる研削速度が低融
点ガラスからなる絶縁層23のそれよりも格段に小さい
ので、噴射砥粒の大きさ、噴射圧、噴射ノズルとの距離
等により前記絶縁層部分23aが効率よく完全に削除さ
れるように予め処理条件を定めて実施する。
During this sandblasting process, since the sandblasting speed of the hard insulating transparent buffer layer 22 is much lower than that of the insulating layer 23 made of low melting point glass, the size of the abrasive grains, the jetting pressure, the jetting nozzle Processing conditions are determined in advance so that the insulating layer portion 23a is efficiently and completely removed depending on the distance between the two and the like.

サンドブラスト処理が終了した後、前記マスクパターン
24を剥離材により除去することによって第1図(d)
に示すように前記透明緩衝層22の研削が極めて微少で
、パターン精度の良好な放電セル画定用のメツシュ状隔
壁25を容易に形成することが可能となる。
After the sandblasting process is completed, the mask pattern 24 is removed using a release material to form the structure shown in FIG. 1(d).
As shown in FIG. 3, the grinding of the transparent buffer layer 22 is extremely small, and it becomes possible to easily form mesh-like partition walls 25 for defining discharge cells with good pattern accuracy.

なお、以上の実施例では面放電型のガス放電パネルにお
ける表示側のガラス基板面に、対向する電極構成ガラス
基板側の放電セルと対応する放電セル画定用のメツシュ
状隔壁を形成する場合の例について説明したが、本発明
はそのような例に限定されるものではなく、例えば男子
−表示用の面放電型、或いはDC駆動タイプ、或いはA
C駆動タイ  ブの対向電極型ガス放電パネル等におけ
る一方のガラス基板面に放電セル画定用のメツシュ状隔
壁を形成する場合にも適用可能であり、しかも同様な効
果が得られる。
The above embodiments are examples in which a mesh-like barrier rib for defining discharge cells corresponding to the discharge cells on the glass substrate side of the opposing electrode structure is formed on the glass substrate surface on the display side in a surface discharge type gas discharge panel. Although the present invention is not limited to such an example, for example, a surface discharge type for male display, a DC drive type, or an A
It can also be applied to the case where a mesh-like partition wall for defining discharge cells is formed on one glass substrate surface of a C-drive type opposed electrode type gas discharge panel, etc., and the same effect can be obtained.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように、本発明に係るガス放電
パネルの製造方法によれば、ガラス基板と隔壁を形成す
べき絶縁層との間に、サンドブラストによる研削速度の
小さい硬質な絶縁性透明緩衝層を介在させ、レジストマ
スクパターンを介してサンドブラストによりパターニン
グすることにより、100 (t m程度の高さの放電
セル画定用のメツシュ状隔壁を高精度に、かつ容易に形
成することが可能となる優れた効果を奏する。従って、
隔壁を有する各種ガス放電パネルの製造方法に適用して
極めて有利である。
As is clear from the above description, according to the method for manufacturing a gas discharge panel according to the present invention, a hard insulating transparent buffer with a low grinding speed by sandblasting is provided between the glass substrate and the insulating layer to form the partition wall. By interposing the layer and patterning by sandblasting through a resist mask pattern, it becomes possible to easily form mesh-like barrier ribs for defining discharge cells with a height of about 100 m with high precision. It has excellent effects.Therefore,
It is extremely advantageous to apply it to methods of manufacturing various gas discharge panels having partition walls.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)〜(d)は本発明に係るガス放電パネルに
おける一方の基板面に構成する放電セ ル画定用の絶縁性隔壁の形成方法の一 実施例を工程順に示す要部断面図、 第2図(a)は面放電型ガス放電パネルにおける表示面
側の基板を示す斜視図、 第2図(b)は面放電型ガス放電パネルにおける電極構
成側の基板を示す斜視図、 第3図は従来の放電セル画定用の絶縁性隔壁の形成上の
問題点を説明する要部断面図 である。 第1図(a)〜(d)において、 21は一方のガラス基板、22は透明緩衝層、23は絶
縁層、23aは絶縁層部分、24はメツシュ状マスクパ
ターン、25はメツシュ状隔壁をそれぞれ示す。 (Q) (b) (C) <d) +セルま輔紳隔も形X加feI殆マI、ホ拌郵1個第1
図 i万更鰹ガχ方丈1【バリルl−みd1!(イ:iqw
会ネす4畔捜6り第2図(Q) 第3図
FIGS. 1(a) to 1(d) are cross-sectional views of essential parts showing, in order of steps, an embodiment of a method for forming an insulating barrier rib for defining discharge cells on one substrate surface of a gas discharge panel according to the present invention; FIG. 2(a) is a perspective view showing a substrate on the display surface side in a surface discharge type gas discharge panel; FIG. 2(b) is a perspective view showing a substrate on the electrode configuration side in the surface discharge type gas discharge panel; The figure is a sectional view of a main part illustrating problems in forming conventional insulating barrier ribs for defining discharge cells. In FIGS. 1(a) to (d), 21 is one glass substrate, 22 is a transparent buffer layer, 23 is an insulating layer, 23a is an insulating layer portion, 24 is a mesh-like mask pattern, and 25 is a mesh-like partition, respectively. show. (Q) (b) (C) <d)
Figure i Mansara Katsuoga χ Hojo 1 [Baril l-mi d1! (I: iqw
Figure 2 (Q) Figure 3

Claims (1)

【特許請求の範囲】 パネル外囲器となるガラス基板(21)の表面上に硬質
絶縁性の透明緩衝層(22)と、その緩衝層(22)上
に隔壁形成用の絶縁層(23)を塗着形成する工程と、 該絶縁層(23)上に放電セル画定用のマスクパターン
(24)を形成する工程と、 該マスクパターン(24)を介して露出する前記絶縁層
部分(23a)のみをサンドブラストにより研削除去し
て前記緩衝層(22)上に個々の放電セルを画定する隔
壁(25)を形成する工程とを含むことを特徴とするガ
ス放電パネルの製造方法。
[Claims] A hard insulating transparent buffer layer (22) on the surface of a glass substrate (21) serving as a panel envelope, and an insulating layer (23) for forming partition walls on the buffer layer (22). a step of forming a mask pattern (24) for defining discharge cells on the insulating layer (23); and a step of forming the insulating layer portion (23a) exposed through the mask pattern (24). A method for producing a gas discharge panel, comprising the step of: forming barrier ribs (25) on the buffer layer (22) for defining individual discharge cells by sandblasting.
JP12308789A 1989-05-16 1989-05-16 Method of manufacturing gas discharge panel Expired - Lifetime JP2814557B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12308789A JP2814557B2 (en) 1989-05-16 1989-05-16 Method of manufacturing gas discharge panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12308789A JP2814557B2 (en) 1989-05-16 1989-05-16 Method of manufacturing gas discharge panel

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP10116509A Division JPH10321127A (en) 1998-04-27 1998-04-27 Gas discharge panel and manufacture thereof

Publications (2)

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JPH02301934A true JPH02301934A (en) 1990-12-14
JP2814557B2 JP2814557B2 (en) 1998-10-22

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Country Link
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104424A (en) * 1990-08-22 1992-04-06 Oki Electric Ind Co Ltd Formation of barrier rib
US5767621A (en) * 1992-03-23 1998-06-16 U.S. Philips Corporation Display device having plate with electron guiding passages
US5876542A (en) * 1995-04-20 1999-03-02 Matsushita Electronics Corporation Gas discharge display panel and its fabrication method
US5906527A (en) * 1996-10-30 1999-05-25 Ferro Corporation Method of making plasma display panels
US5910396A (en) * 1994-09-06 1999-06-08 U.S. Philips Corporation Method of patterned eroding of a coating provided on a substrate
WO2007026426A1 (en) * 2005-08-31 2007-03-08 Fujitsu Hitachi Plasma Display Limited Method of forming partition wall of plasma display panel

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3705914B2 (en) 1998-01-27 2005-10-12 三菱電機株式会社 Surface discharge type plasma display panel and manufacturing method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104424A (en) * 1990-08-22 1992-04-06 Oki Electric Ind Co Ltd Formation of barrier rib
US5767621A (en) * 1992-03-23 1998-06-16 U.S. Philips Corporation Display device having plate with electron guiding passages
CN1058581C (en) * 1992-03-23 2000-11-15 皇家菲利浦电子有限公司 Method of manufacturing a plate of electrically insulating material having a pattern of apertures and/or cavities
US5910396A (en) * 1994-09-06 1999-06-08 U.S. Philips Corporation Method of patterned eroding of a coating provided on a substrate
US5876542A (en) * 1995-04-20 1999-03-02 Matsushita Electronics Corporation Gas discharge display panel and its fabrication method
US5906527A (en) * 1996-10-30 1999-05-25 Ferro Corporation Method of making plasma display panels
WO2007026426A1 (en) * 2005-08-31 2007-03-08 Fujitsu Hitachi Plasma Display Limited Method of forming partition wall of plasma display panel

Also Published As

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