JPH0230152A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH0230152A
JPH0230152A JP18101688A JP18101688A JPH0230152A JP H0230152 A JPH0230152 A JP H0230152A JP 18101688 A JP18101688 A JP 18101688A JP 18101688 A JP18101688 A JP 18101688A JP H0230152 A JPH0230152 A JP H0230152A
Authority
JP
Japan
Prior art keywords
resin
lead frame
lead
punching
punched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18101688A
Other languages
Japanese (ja)
Inventor
Takayasu Handa
半田 隆保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18101688A priority Critical patent/JPH0230152A/en
Publication of JPH0230152A publication Critical patent/JPH0230152A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate resin burr remaining on the sagged part of a lead frame, and remarkably reduce the solder-plating defect caused by residual burr, by a method wherein resin segment which has thinly squeezed out on the periphery of a sealing resin main body and bonded to a lead is removed, by performing punching from the surface opposite to a surface wherein a lead frame is punched by press punching method. CONSTITUTION:After a lead frame 12 which mounts a semiconductor element is resin- sealed, resin segment 15 which has thinly squeezed out on the periphery of a sealing resin main body and fusion-bonded to a lead is removed by punching the resin segment 15 from the surface opposite to a surface wherein the lead frame 12 is punched by press punching method. For example, a semiconductor device 11 is so placed face-down (the surface of semiconductor element is placed face-down) that the punched surface of the lead frame 12 formed by press punching method faces downward, and formed in a part surrounded by a dumper part 13 and an external lead part 14. Thick resin burr part 15 is punched with a resin punching punch 16 and a die 17. Thereby, the acting force of the resin punching punch 16 is effectively applied also to resin burr on a sagged part 18, and the resin burr remaining on the sagged part can be removed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造方法に関し、特に樹脂封止型
の半導体装置の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of manufacturing a resin-sealed semiconductor device.

〔従来の技術〕[Conventional technology]

従来、樹脂封止型の半導体装置はプレス打抜法で作った
リードフレームの打抜き面を上にして金型で樹脂射出方
式で製造していたが、樹脂成形直後第3図(a)に示す
様に樹脂封止された半導体装置31から出ているリード
フレーム32の外部リード部34とダムバ一部33に囲
まれた部分に厚樹脂パリ部35がはみ出して形成されて
しまう。
Conventionally, resin-sealed semiconductor devices have been manufactured using a resin injection method using a mold with the punched side of a lead frame made by a press punching method facing up, as shown in Figure 3 (a) immediately after resin molding. In this way, a thick resin pad 35 protrudes and is formed in a portion surrounded by the external lead portion 34 and the dam bar portion 33 of the lead frame 32 protruding from the resin-sealed semiconductor device 31.

この厚樹脂パリ部35を取り除くために第3図(b)に
示す様にダイ37とポンチ36で打ち抜いていた。
In order to remove this thick resin pad 35, it was punched out using a die 37 and a punch 36, as shown in FIG. 3(b).

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体装置の製造方法では第3図(C)
に示す如く、プレス打抜き法でリードフレームを形成す
る時に打抜き面側にできてしまうダレ面38側から樹脂
抜きポンチ36により打抜くので、その力はポンチの周
囲で真下に働きダレ部38に付着した樹脂部にはほとん
どその力が働かないのでダレ部38にはダレ部に残った
樹脂バリ39が付着したまま残る。ダレ部に残った樹脂
バリ39は後工程の樹脂バリ取り工程例えば一般的に用
いられている電解によるパリ取り法や高圧水を吹き付け
るジェットホーニング法を行っても取りきれず後の半田
メツキ工程でこの部分には半田メツキがなされず、不良
として歩留りを低下させる原因となり、生産性が著しく
悪くなるという欠点を有していた。
In the conventional semiconductor device manufacturing method described above, the method shown in FIG. 3(C)
As shown in the figure, since the resin punch 36 punches from the sagging surface 38 side that is created on the punching surface side when forming a lead frame by press punching, the force acts directly downward around the punch and sticks to the sagging part 38. Since almost no force acts on the sagging resin portion, the resin burr 39 remaining in the sagging portion remains attached to the sagging portion 38. The resin burr 39 remaining in the sagging area cannot be removed even when the resin burr 39 is removed in the subsequent resin deburring process, such as the generally used deburring method using electrolysis or the jet honing method in which high-pressure water is sprayed. This part was not soldered and was considered defective, causing a decrease in yield, resulting in a significant drop in productivity.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置の製造方法は半導体素子を搭載した
リードフレームを樹脂封止した後、封止樹脂本体の周辺
に薄くはみ出しリードと溶着している樹脂片を、リード
フレームをプレス打抜き法により打抜いた面と反対の面
から前記樹脂片を打抜きを行なって取り除くことである
In the method for manufacturing a semiconductor device of the present invention, after a lead frame on which a semiconductor element is mounted is sealed with a resin, a thin piece of resin protruding from the periphery of the sealing resin body and welded to the lead is removed from the lead frame by a press punching method. The resin piece is removed by punching from the opposite side to the punched side.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の第1の実施例を示す図である。FIG. 1 is a diagram showing a first embodiment of the present invention.

第1図(a)はデエアル・インライン・パッケージ(D
 I P)型半導体装置のリード導出部の平面図である
本図は厚樹脂パリ部15の樹脂抜き前の半導体装置11
を示し、プレス打抜き法で形成したリードフレーム12
0打抜面が下側になる様に半導体装置を裏向き(半導体
素子面が下向き)に置いてあり、ダムバ一部13と外部
リード部14に囲まれた部分には厚樹脂バ!J 15.
が形成されている。第1図Cb)はM1図(a)のA−
A’断面に樹脂抜きポンチ16とダイ17で樹脂パリが
打抜かれる前の状態を示す。第1図(c)は第1図(b
)で厚樹脂パリ部15を打抜いた後の形状である。以上
説明した本発明の製造方法によれば、プレス打抜き法で
形成したリードフレームのダレ部18が厚樹脂パリを打
抜くポンチ16の反対面に位置しており、厚樹脂パリの
断面形状が先広がりになっているので、樹脂抜きポンチ
16の作用する力が有効にダレ部18にある樹脂パリに
も加わり、従来方法の様にダレ部に残る樹脂パリをなく
すことが可能になった。
Figure 1(a) shows the deal inline package (D
This figure, which is a plan view of the lead lead-out portion of the IP) type semiconductor device, shows the semiconductor device 11 before the resin is removed from the thick resin pad portion 15.
A lead frame 12 formed by a press punching method.
The semiconductor device is placed face down (semiconductor element side facing downward) so that the punched surface is facing downward, and a thick resin bar is placed in the area surrounded by the dam bar part 13 and the external lead part 14! J15.
is formed. Figure 1Cb) is A- in Figure M1(a)
Section A' shows the state before the resin punch is punched out using the resin punch 16 and the die 17. Figure 1(c) is similar to Figure 1(b).
) This is the shape after punching out the thick resin pad part 15. According to the manufacturing method of the present invention described above, the sagging portion 18 of the lead frame formed by the press punching method is located on the opposite side of the punch 16 for punching the thick resin pad, so that the cross-sectional shape of the thick resin pad is first Since it is spread out, the force exerted by the resin punch 16 is effectively applied to the resin flakes in the sagging part 18, making it possible to eliminate the resin flakes remaining in the sagging part unlike the conventional method.

第2図は本発明の第2の実施例を示す図である。FIG. 2 is a diagram showing a second embodiment of the present invention.

第2図(a)はDIP型半導体装置のリード導出部の平
面図、第2図(b)、 (c)は第2図(a)のA−A
″部の断面図である。第1の実施例では半導体装置11
を裏向きにしてリードフレームの打抜き面を樹脂抜きポ
ンチの反対側に位置させたが、第2の実施例ではあらか
じめリードフレーム220打抜き面が下向き(半導体素
子が打抜き面の反対側に固着されている。)になる様に
配置して樹脂封止したもので、この場合樹脂抜きする際
には半導体装置を裏向きにする必要はない。本実施例に
おいて作用効果は第1の実施例と同じである。
FIG. 2(a) is a plan view of the lead lead-out portion of a DIP type semiconductor device, and FIG. 2(b) and (c) are A-A in FIG. 2(a).
FIG.
The lead frame 220 was turned face down and the punched surface of the lead frame was positioned on the opposite side of the resin punch. ) and sealed with resin. In this case, there is no need to turn the semiconductor device upside down when removing the resin. The effects of this embodiment are the same as those of the first embodiment.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明の方法によればプレス打抜
き法により形成した金属フレームの打抜き面の反対面か
ら樹脂抜きを行うことにより、リードフレームのダレ部
に残る樹脂パリをなくすことが可能になり、従来方法に
比ベバリ残りによる半田メツキネ良を激減させる効果が
ある。
As explained above, according to the method of the present invention, resin is removed from the opposite side of the punched surface of the metal frame formed by the press punching method, thereby making it possible to eliminate resin debris remaining in the sag portion of the lead frame. Compared to the conventional method, this method has the effect of drastically reducing solder failure caused by residual burr.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の第1の実施例を示し、同図(a)はD
IP型半導体装置のリード導出部の平面図、同図(b)
、 (c)は同図(a)のA−A’部の樹脂抜き前後の
断面図、第2図は本発明の第2の実施例を示し、同図(
a)はDIP型半導体装置のり一ド導出部の平面図、同
図(b)、 (c)は同図(a)のA−A’部の樹脂抜
き前後の断面図、第3図は従来例のDIP型半導体装置
の製造方法を示し、同図(a)はリード導出部の平面図
、同図(b)、 (c)は同図(a)のA−A’部の樹
脂抜き前後の断面図である。 11.21.31・・・・・・半導体装置、17,27
゜37・・・・・・グイ、12,22.32・・・・・
・リードフレーム、18,28.38・・・・・・ダレ
部、13,23゜33・・・・・・ダムバ一部、39・
・・・・・ダレ部に残った樹脂パリ、14,24,3.
4・・・・・・外部リード部、15゜25.35・・・
・・・厚樹脂パリ部、16,26゜36・・・・・・樹
脂抜きポンチ。 代理人 弁理士  内 原   晋
FIG. 1 shows a first embodiment of the present invention, and FIG.
Plan view of lead lead-out part of IP type semiconductor device, same figure (b)
, (c) is a sectional view before and after removing the resin from the section A-A' in Fig. 2(a), and Fig. 2 shows the second embodiment of the present invention.
a) is a plan view of the glue lead-out part of a DIP type semiconductor device, FIG. The method for manufacturing an example DIP type semiconductor device is shown in which Figure (a) is a plan view of the lead lead-out section, Figures (b) and (c) are before and after resin removal at the A-A' section in Figure (a). FIG. 11.21.31...Semiconductor device, 17,27
゜37...gui, 12,22.32...
・Lead frame, 18, 28. 38... Sag part, 13, 23° 33... Dam bar part, 39.
...Resin paris left in the sagging part, 14, 24, 3.
4...External lead part, 15°25.35...
...Thick resin paring part, 16,26°36...Resin punch. Agent Patent Attorney Susumu Uchihara

Claims (1)

【特許請求の範囲】[Claims] 半導体素子を搭載したリードフレームを樹脂封止した後
、封止樹脂本体の周辺に薄くはみ出しリードと溶着して
いる樹脂片を、リードフレームをプレス打抜き法により
打抜いた面と反対の面から前記樹脂片を打抜きを行なっ
て取り除くことを特徴とする半導体装置の製造方法。
After the lead frame on which the semiconductor element is mounted is sealed with resin, the resin piece that protrudes thinly from the periphery of the sealing resin body and is welded to the lead is removed from the side opposite to the side where the lead frame was punched out using the press punching method. A method for manufacturing a semiconductor device, characterized in that resin pieces are removed by punching.
JP18101688A 1988-07-19 1988-07-19 Manufacture of semiconductor device Pending JPH0230152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18101688A JPH0230152A (en) 1988-07-19 1988-07-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18101688A JPH0230152A (en) 1988-07-19 1988-07-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH0230152A true JPH0230152A (en) 1990-01-31

Family

ID=16093279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18101688A Pending JPH0230152A (en) 1988-07-19 1988-07-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0230152A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0371647A (en) * 1989-08-10 1991-03-27 Sanyo Electric Co Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157235A (en) * 1979-05-25 1980-12-06 Nec Corp Manufacture of semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157235A (en) * 1979-05-25 1980-12-06 Nec Corp Manufacture of semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0371647A (en) * 1989-08-10 1991-03-27 Sanyo Electric Co Ltd Manufacture of semiconductor device

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