JPH0228945A - Surface treating apparatus for semiconductor device - Google Patents

Surface treating apparatus for semiconductor device

Info

Publication number
JPH0228945A
JPH0228945A JP17973788A JP17973788A JPH0228945A JP H0228945 A JPH0228945 A JP H0228945A JP 17973788 A JP17973788 A JP 17973788A JP 17973788 A JP17973788 A JP 17973788A JP H0228945 A JPH0228945 A JP H0228945A
Authority
JP
Japan
Prior art keywords
semiconductor device
deburring
burning
section
magazine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17973788A
Other languages
Japanese (ja)
Inventor
Hideyoshi Yano
矢野 栄喜
Jun Otsuji
順 大辻
Masamitsu Imamura
優光 今村
Ryoji Ogata
良二 尾形
Hiroshi Shimoda
浩 下田
Tetsuji Miyamoto
宮本 哲次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17973788A priority Critical patent/JPH0228945A/en
Publication of JPH0228945A publication Critical patent/JPH0228945A/en
Pending legal-status Critical Current

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To make it possible to perform continuous treatments of burning and deburring by constituting an apparatus with a supplying part which supplies a semiconductor device that is not treated into the next step, a burning part which treats the surface of the semiconductor device that is supplied from the supplying part, a deburring part, and a containing part which contains the semiconductor device whose surface is treated. CONSTITUTION:A semiconductor device 1 which is contained in a magazine 2A of a supplying part A is moved into a burning part B with a sucking pad 3A. When the semiconductor device 1 is made to pass under a flame 10 jetted from a burner 9, the surface of the resin part of the semiconductor device 1 is burned. Then, the semiconductor device 1 is moved on a conveyer 5 of a deburring part C and passed through a lower water-pressure nozzle 4A and an upper water-pressure nozzle 4B which jet high pressure water. Thus deburring is performed. The semiconductor device whose deburring has been finished is contained in a magazine 2B with a sucking pad 3B of a containing part D. In this way, the burning and deburring can be performed continuously.

Description

【発明の詳細な説明】 〔産業上の利用分野) この発明は、プラスチック形の半導体装置の表面処理装
置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a surface treatment apparatus for plastic semiconductor devices.

〔従来の技術〕[Conventional technology]

従来のこの種の装置の一例を第2図(a)。 An example of a conventional device of this kind is shown in FIG. 2(a).

(b)について説明する。第2図(a)はバリ取り装置
の概略構成を示し、第2図(b)はバーニング処理装置
の概略構成を示す。第2図において、1は半導体装置、
2Aは供給側の半導体装置1を収納するインローダマガ
ジン、2Bは前記半導体装置1の取出し側のアウトロー
ダマガジン、3Aはインローダ吸着パッド、3Bはアウ
トロダ吸着パッド、4Aは下水圧ノズル、4Bは上水圧
ノズル、5は前記半導体装置1の搬送用のコンベア、6
は前記コンベア5を駆動する駆動モータ、7は高圧供給
ポンプを示す。8は水素ガスタンク、9はバーナ、10
は水素ガス燃焼による火炎を示す。また、11はカバー
レールを示す。
(b) will be explained. FIG. 2(a) shows a schematic structure of a deburring device, and FIG. 2(b) shows a schematic structure of a burning processing device. In FIG. 2, 1 is a semiconductor device;
2A is an inloader magazine for storing the semiconductor device 1 on the supply side, 2B is an outloader magazine for taking out the semiconductor device 1, 3A is an inloader suction pad, 3B is an outloader suction pad, 4A is a sewage pressure nozzle, and 4B is an upper a water pressure nozzle; 5 a conveyor for transporting the semiconductor device 1; 6;
is a drive motor that drives the conveyor 5, and 7 is a high-pressure supply pump. 8 is hydrogen gas tank, 9 is burner, 10
indicates a flame caused by hydrogen gas combustion. Further, 11 indicates a cover rail.

次に動作について説明する。Next, the operation will be explained.

第2図(a)において、インローダマガジン2Aに収納
されている半導体装置1は、回転するインローダ吸着バ
ッド3Aによって搬送コンベア5上に移送される。次い
で、コンベア5によって高圧水の噴射する下水圧ノズル
4A部に送られ、半導体装置1の下方部分のバリ取りを
行う。このとき、半導体装置1がコンベア5より飛び出
さないようカバーレール11で位置決めされる。次いで
、上水圧ノズル4B部へ移送され、上方部分のハリ取り
を行う。次いで、バリ取りを完了した半導体装置1はア
ウトローダ吸着パッド3Bでアウトローダマガジン2B
に収納され、バリ取り作業を終了する。この後、半導体
装置1はメツキ処理を施される。その後、第2図(b)
に示すバーニング装置によりバーニング処理を行う。す
なわち、第2図(b)において、コンベア5によって移
送されてくる半導体装置1は、バーナ9の水素ガス燃焼
による火炎10によってバーニング処理される。バーニ
ング処理は半導体装置1のプラスチック本体部表面に付
着した離型剤、汚れ等を焼き取り、洗浄化するものであ
る。
In FIG. 2(a), the semiconductor device 1 housed in the inloader magazine 2A is transferred onto the transport conveyor 5 by the rotating inloader suction pad 3A. Next, the water is sent by the conveyor 5 to a sewage pressure nozzle 4A section that injects high-pressure water, and the lower portion of the semiconductor device 1 is deburred. At this time, the semiconductor device 1 is positioned by the cover rail 11 so that it does not jump out from the conveyor 5. Next, it is transferred to the water pressure nozzle 4B section, and the upper portion is deburred. Next, the semiconductor device 1 that has been deburred is attached to the outloader magazine 2B using the outloader suction pad 3B.
and the deburring work is completed. After this, the semiconductor device 1 is subjected to a plating process. After that, Fig. 2(b)
The burning process is performed using the burning device shown in . That is, in FIG. 2(b), the semiconductor device 1 transferred by the conveyor 5 is subjected to a burning process by the flame 10 caused by combustion of hydrogen gas in the burner 9. The burning process burns off mold release agent, dirt, etc. adhering to the surface of the plastic body of the semiconductor device 1 and cleans it.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来のバリ取り装置およびバーニング処理装置を備えた
半導体装置の表面処理装置は、バリ取り作業およびバー
ニング作業をそれぞれ別々に行うため、バリ取り作業と
バーニング作業を2つの作業と2種類の装置で処理しな
ければならず、作業工数がかかる。また、2種類の機誠
装置を保守管理する手間がかかる等の問題点があった。
Conventional semiconductor device surface treatment equipment equipped with deburring equipment and burning processing equipment performs deburring work and burning work separately, so deburring work and burning work are processed in two operations and with two types of equipment. This requires a lot of man-hours. In addition, there were other problems such as the need for maintenance and management of two types of equipment.

この発明は、上記の問題点を解消するためになされたも
ので、バリ取りとバーニング処理を一連の作業工程にお
いて処理するとともに、保修管理の容易な半導体装置の
表面処理装置を得ることを目的とする。
This invention was made in order to solve the above-mentioned problems, and aims to provide a surface treatment device for semiconductor devices that performs deburring and burning in a series of work processes, and that facilitates maintenance management. do.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る半導体装置の表面処理装置は、未処理の
半導体装置を次工程へ供給する供給部と、供給部から供
給された半導体装置を表面処理するバーニング処理部お
よびバリ取り処理部と、表面処理された半導体装置を収
納する収納部とから構成したものである。
The surface processing apparatus for semiconductor devices according to the present invention includes a supply section that supplies unprocessed semiconductor devices to the next process, a burning processing section and a deburring processing section that perform surface processing on the semiconductor devices supplied from the supply section, and a surface treatment section that processes the semiconductor devices supplied from the supply section. and a storage section for storing processed semiconductor devices.

〔作用〕[Effect]

この発明においては、半導体装置を表面処理するバーニ
ング処理部およびバリ取り部を一体の装置に構成したこ
とから、バーニング処理およびバリ取り処理が一連の工
程で処理できる。
In the present invention, since the burning treatment section for surface-treating the semiconductor device and the deburring section are configured into an integrated device, the burning treatment and the deburring treatment can be performed in a series of steps.

〔実施例〕〔Example〕

以下、この発明の一実施例を第1図について説明する。 An embodiment of the present invention will be described below with reference to FIG.

第1図において、第2図と同一符号は同一構成′部分を
示すが、この実施例ではバリ取り部とバーニング処理部
とを一連の工程で処理できるように構成したものである
。すなわち、Aは半導体装置1の供給部、Bはバーニン
グ処理部、Cはバリ取り部、Dは処理ずみの半導体装置
1を収納する収納部を示す。
In FIG. 1, the same reference numerals as in FIG. 2 indicate the same components, but in this embodiment, the deburring section and the burning section can be processed in a series of steps. That is, A indicates a supply section for the semiconductor device 1, B indicates a burning processing section, C indicates a deburring section, and D indicates a storage section for storing the processed semiconductor device 1.

次に動作について説明する。Next, the operation will be explained.

第1図において、供給部Aのインローダマガジン2Aに
収納されている半導体装置1はインローダ吸着パッド3
Aによってバーニング処理部Bへ移送される。次いで、
バーニング処理部Bのバーナ9より水素ガス燃焼による
噴射する火炎10の下を通過させることによって半導体
装置1の樹脂部表面をバーニング処理する。次いで、半
導体装置1はバリ取り部Cのコンベア5へ移送され、高
圧水を噴射する下水圧ノズル4Aおよび上水圧ノズル4
B部を通過する。このとぎ、半導体装置1の下方および
上方のバリ取り処理を行う。また、カバーレール11は
高圧水の噴射により半導体装置1がコンベア5の搬送レ
ールよりはずれないよう位置決めを行うものである。次
いで、バリ取り処理の完了した半導体装置1は、収納部
りのアウトローダ吸着パッド3Bによってアウトローダ
マガジン2Bに収納される。以上でバーニング処理、バ
リ取り処理を連動して行うことができる。
In FIG. 1, a semiconductor device 1 housed in an inloader magazine 2A of a supply section A is attached to an inloader suction pad 3.
It is transferred to the burning processing section B by A. Then,
The surface of the resin portion of the semiconductor device 1 is subjected to a burning process by passing under the flame 10 ejected by burning hydrogen gas from the burner 9 of the burning process section B. Next, the semiconductor device 1 is transferred to the conveyor 5 of the deburring section C, where it is transferred to the sewage pressure nozzle 4A and the water pressure nozzle 4 that spray high-pressure water.
Pass through part B. At this point, the lower and upper parts of the semiconductor device 1 are deburred. Furthermore, the cover rail 11 is used to position the semiconductor device 1 so that it does not fall off the transport rail of the conveyor 5 by spraying high-pressure water. Next, the semiconductor device 1 that has undergone the deburring process is stored in the outloader magazine 2B by the outloader suction pad 3B in the storage section. With the above steps, the burning process and the deburring process can be performed in conjunction with each other.

なお、上記実施例では、バーニング処理の完了後、バリ
取り処理を行うように構成したが、バリ取り処理した後
にバーニング処理を行ってもよい。
In the above embodiment, the deburring process is performed after the burning process is completed, but the burning process may be performed after the deburring process.

〔発明の効果〕〔Effect of the invention〕

以上説明したようにこの発明は、未処理の半導体装置を
次工程へ供給する供給部と、供給部から供給された半導
体装置を表面処理するバーニング処理部およびバリ取り
処理部と、表面IA埋された半導体装置を収納する収納
部とから構成したので、バーニング処理とバリ取り処理
を連続処理することができ、装置が安価にできるととも
に、作業工数の少ない半導体装置の組立て加工作業がで
きる効果がある。
As explained above, the present invention includes a supply section that supplies unprocessed semiconductor devices to the next process, a burning processing section and a deburring processing section that perform surface treatment on the semiconductor devices supplied from the supply section, and a surface IA buried processing section. Since it consists of a storage section for storing semiconductor devices, it is possible to carry out burning and deburring processes continuously, which has the effect of making the device cheaper and allowing assembly and processing of semiconductor devices with fewer man-hours. .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例を示す概略構成図、第2図
は従来例を示す概略構成図である。 図において、1は半導体装置、2Aはインローダマガジ
ン、2Bはアウトローダマガジン、3Aはインローダ吸
着パッド、3Bはアウトローダ吸着パッド、4Aは下水
圧ノズル、4Bは上水圧ノズル、5はコンベア、6は駆
動モータ、7は高圧供給ポンプ、8は水素ガスタンク、
9はバーナ、10は火炎、11はカバーレール、Aは供
給部、Bはバーニング処理部、Cはバリ取り部、Dは収
納部である。 なお、各図中の同一符号は同一または相当部分を示す。
FIG. 1 is a schematic diagram showing an embodiment of the present invention, and FIG. 2 is a schematic diagram showing a conventional example. In the figure, 1 is a semiconductor device, 2A is an inloader magazine, 2B is an outloader magazine, 3A is an inloader suction pad, 3B is an outloader suction pad, 4A is a sewer pressure nozzle, 4B is a water pressure nozzle, 5 is a conveyor, and 6 is a drive motor, 7 is a high pressure supply pump, 8 is a hydrogen gas tank,
9 is a burner, 10 is a flame, 11 is a cover rail, A is a supply section, B is a burning processing section, C is a deburring section, and D is a storage section. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 未処理の半導体装置を次工程へ供給する供給部と、前記
供給部から供給された半導体装置を表面処理するバーニ
ング処理部およびバリ取り処理部と、前記表面処理され
た半導体装置を収納する収納部とから構成されたことを
特徴とする半導体装置の表面処理装置。
a supply section for supplying unprocessed semiconductor devices to the next process; a burning processing section and a deburring processing section for surface-treating the semiconductor devices supplied from the supply section; and a storage section for storing the surface-treated semiconductor devices. A surface treatment apparatus for a semiconductor device, comprising:
JP17973788A 1988-07-18 1988-07-18 Surface treating apparatus for semiconductor device Pending JPH0228945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17973788A JPH0228945A (en) 1988-07-18 1988-07-18 Surface treating apparatus for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17973788A JPH0228945A (en) 1988-07-18 1988-07-18 Surface treating apparatus for semiconductor device

Publications (1)

Publication Number Publication Date
JPH0228945A true JPH0228945A (en) 1990-01-31

Family

ID=16070985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17973788A Pending JPH0228945A (en) 1988-07-18 1988-07-18 Surface treating apparatus for semiconductor device

Country Status (1)

Country Link
JP (1) JPH0228945A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993000704A1 (en) * 1991-06-20 1993-01-07 Kabushiki Gaisha Ishii Hyoki Method of blasting ic frame and apparatus therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993000704A1 (en) * 1991-06-20 1993-01-07 Kabushiki Gaisha Ishii Hyoki Method of blasting ic frame and apparatus therefor
US5415898A (en) * 1991-06-20 1995-05-16 Kabushiki Gaisha Ishii Hyoki Method of blasting IC frames and apparatus therefore

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