JPH02288228A - Dry etching and device therefor - Google Patents

Dry etching and device therefor

Info

Publication number
JPH02288228A
JPH02288228A JP10760289A JP10760289A JPH02288228A JP H02288228 A JPH02288228 A JP H02288228A JP 10760289 A JP10760289 A JP 10760289A JP 10760289 A JP10760289 A JP 10760289A JP H02288228 A JPH02288228 A JP H02288228A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
microwaves
generated
cavity resonator
magnetron
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10760289A
Inventor
Junzo Azuma
Kazuhiro Ohara
Toru Otsubo
Mitsuo Tokuda
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To form a pattern having excellent dimensional accuracy and accuracy of a sectional shape extending over the whole surface of a wafer while enabling dry etching treatment, through which adhering dust is reduced, by using microwaves and combining a cavity resonator and a slot antenna.
CONSTITUTION: Openings through which laser beams 18 are passed are formed to the top face of a cavity resonator 7, a pattern 8a and a dust removing electrode 9. A progress is decided by a decision device 19 according to the result of the measurement of an etching monitor 17, and a signal is transmitted over a power controller 21. A magnetron 16 is supplied with power, and microwaves are oscillated from the magnetron, and fed to the cavity resonator 7 by a waveguide 15. Stationary waves at an E mode set are generated in the cavity resonator 7, thus radiating microwaves into a treating chamber from slit patterns 8b shaped at a right angle to surface currents generated. Plasma is generated in regions 25 by microwaves and magnetic fields of 875G generated by magnets 5, diffused electrons are excited by microwaves being radiated from the slit patterns 8b and having high electric field strength, and plasma is generated in the whole treating chamber 1.
COPYRIGHT: (C)1990,JPO&Japio
JP10760289A 1989-04-28 1989-04-28 Dry etching and device therefor Pending JPH02288228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10760289A JPH02288228A (en) 1989-04-28 1989-04-28 Dry etching and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10760289A JPH02288228A (en) 1989-04-28 1989-04-28 Dry etching and device therefor

Publications (1)

Publication Number Publication Date
JPH02288228A true true JPH02288228A (en) 1990-11-28

Family

ID=14463332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10760289A Pending JPH02288228A (en) 1989-04-28 1989-04-28 Dry etching and device therefor

Country Status (1)

Country Link
JP (1) JPH02288228A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7632419B1 (en) * 1997-10-06 2009-12-15 Applied Materials, Inc. Apparatus and method for monitoring processing of a substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7632419B1 (en) * 1997-10-06 2009-12-15 Applied Materials, Inc. Apparatus and method for monitoring processing of a substrate

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