JPH02271358A - Method for forming photoresist pattern - Google Patents

Method for forming photoresist pattern

Info

Publication number
JPH02271358A
JPH02271358A JP9402089A JP9402089A JPH02271358A JP H02271358 A JPH02271358 A JP H02271358A JP 9402089 A JP9402089 A JP 9402089A JP 9402089 A JP9402089 A JP 9402089A JP H02271358 A JPH02271358 A JP H02271358A
Authority
JP
Japan
Prior art keywords
resist
film
photoresist
recessed part
photoresist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9402089A
Other languages
Japanese (ja)
Inventor
Yutaka Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP9402089A priority Critical patent/JPH02271358A/en
Publication of JPH02271358A publication Critical patent/JPH02271358A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form a perpendicular cross section of a photoresist pattern by forming an SOG oxidized film in a recessed part formed on the photoresist and etching the photoresist by using this film as a mask.
CONSTITUTION: The wafer 1 is coated with the positive type photoresist 2, the resist 2 is prebaked, and a partial area 3 of the resist 2 is selectively exposed to ultraviolet rays and developed to form the recessed part on the resist 2. The whole surface of the resist 2 is coated with the SOG (spin on glass) oxidized film 4 and after it is baked, it is subjected to anisotropic dry etching until the unexposed area of the resist surface is disclosed, and the film 4 is left on the recessed part. The resist 2 is removed by anisotropic dry etching with O2 by using the left film 4 as the mask, thus permitting the resist pattern 2a perpendicular in the cross section to be formed.
COPYRIGHT: (C)1990,JPO&Japio
JP9402089A 1989-04-12 1989-04-12 Method for forming photoresist pattern Pending JPH02271358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9402089A JPH02271358A (en) 1989-04-12 1989-04-12 Method for forming photoresist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9402089A JPH02271358A (en) 1989-04-12 1989-04-12 Method for forming photoresist pattern

Publications (1)

Publication Number Publication Date
JPH02271358A true JPH02271358A (en) 1990-11-06

Family

ID=14098864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9402089A Pending JPH02271358A (en) 1989-04-12 1989-04-12 Method for forming photoresist pattern

Country Status (1)

Country Link
JP (1) JPH02271358A (en)

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